LBSS139DW1T1G [LRC]

Power MOSFET200 mAmps, 50 Volts NâChannel SC-88;


型号：	LBSS139DW1T1G
厂家：	LESHAN RADIO COMPANY
描述：	Power MOSFET200 mAmps, 50 Volts NâChannel SC-88
文件：	总7页 (文件大小：1063K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LBSS139DW1T1G

S-LBSS139DW1T1G

Power MOSFET

200 mAmps, 50 Volts N–Channel SC-88

1. FEATURES

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

SC88(SOT-363)

●

Low threshold voltage (VGS(th): 0.5V...1.5V) makes it ideal for low

voltage applications.

●

ESD Protected:1500V

2. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBSS139DW1T1G

LBSS139DW1T3G

3000/Tape&Reel

10000/Tape&Reel

3. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VDSS

VGS

Limits

Unit

Vdc

Drain–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

±20

Vdc

mAdc

– Continuous TA = 25°C

– Pulsed (tp≤10μs)

200

800

IDM

4. THERMAL CHARACTERISTICS

Parameter

Symbol

Limits

Unit

Total Device Dissipation,

380

FR−4 Board (Note 1) @ TA = 25ºC

Derate above 25ºC

3.05

328

mW/ºC

ºC/W

Thermal Resistance,

RΘJA

Junction–to–Ambient(Note 1)

Junction and Storage temperature

Maximum Lead Temperature for Solder

Purposes, for 10 seconds

TJ,Tstg −55∼+150

TL 260

ºC

1. FR–4 = 1.0×0.75×0.062 in.

Leshan Radio Company, LTD.

Rev.B Jan 2016

1/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

OFF CHARACTERISTICS

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Vdc

Drain–Source Breakdown Voltage

(VGS = 0, ID = 250μAdc)

VBRDSS

μAdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 25 Vdc)

IDSS

0.1

0.5

(VGS = 0, VDS = 50 Vdc)

μAdc

Gate–Body Leakage Current, Forward

(VGS = 20 Vdc)

IGSSF

IGSSR

Gate–Body Leakage Current, Reverse

(VGS = - 20 Vdc)

-10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

Vdc

VGS(th)

RDS(on)

(VDS = VGS, ID = 1.0mAdc)

Static Drain–Source On–State Resistance

(VGS = 2.75 Vdc, ID < 200 mAdc,

TA = –40°C to +85°C)

0.5

5.6

1.5

3.5

Ohms

(VGS = 5.0 Vdc, ID = 200 mAdc)

Forward Transconductance

(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)

DYNAMIC CHARACTERISTICS

Input Capacitance

gfs

100

Ciss

Coss

Crss

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

22.8

3.5

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

SWITCHING CHARACTERISTICS

2.9

(VDD = 30 Vdc , VGEN =

Turn-On Delay Time

td(on)

td(off)

3.8

10 V,RG =25Ω ,RL =60

Ω,ID =500 mAdc)

Turn-Off Delay Time

2.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.

Leshan Radio Company, LTD.

Rev.B Jan 2016

2/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

6.ELRCTRICAL CHARACTERISTICS CURVES

Power Dissipation

Drain Current

1.0

0.8

0.6

0.4

0.2

0.0

0.6

0.5

0.4

0.3

0.2

0.1

0.0

T_A=25^oC,V_G=10V

20 40 60 80 100 120 140 160

T_A=25^oC

20 40 60 80 100 120 140 160

T_j- Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance

100us

Duty = 0.5

300us

0.2

1ms

0.1

10ms

0.1

0.05

0.02

100ms

0.1

0.01

1E-3

0.01

Single Pulse

Mounted on 1in²pad

R_θJA: 150 ^oC/W

T_C= 25 ^oC

0.1

0.01

100 300

1E-4 1E-3 0.01 0.1

10 100

V_DS- Drain-Source Voltage (V)

Square Wave Pulse Duration (sec)

Leshan Radio Company, LTD.

Rev.B Jan 2016

3/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

6.ELRCTRICAL CHARACTERISTICS CURVES(Con.)

Output Characteristics

Drain-Source On Resistance

1.0

0.8

0.6

0.4

0.2

0.0

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_GS= 4,5,6,8,10 V

3.0 V

V_GS= 4.5V

V_GS= 10 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

V_DS- Drain-Source Voltage (V)

I_D- Drain Current (A)

Transfer Characteristics

Gate Threshold Voltage

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I_DS= 250 μA

I_D= 0.5 A

-50 -25

25 50 75 100 125 150

V_GS- Gate-Source Voltage (V)

T_j- Junction Temperature (°C)

Leshan Radio Company, LTD.

Rev.B Jan 2016

4/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

6.ELRCTRICAL CHARACTERISTICS CURVES(Con.)

Drain-Source On Resistance

1.6

Source-Drain Diode Forward

V_GS= 10 V

I_D= 0.5 A

1.4

1.2

1.0

0.8

T= 150 ^oC

T =25 ^oC

R_ON@T_j= 25 ^oC: 1.2 Ω

0.1

-50 -25

25 50 75 100 125 150

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

T_j- Junction Temperature (°C)

V_SD- Source-Drain Voltage (V)

Gate Charge

Capacitance

4.5

Frequency = 1 MHz

V_DS= 10 V

4.0

I_DS= 0.5 A

Ciss

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Coss

Crss

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

V_DS- Drain-Source Voltage (V)

Q_G- Gate Charge (pC)

Leshan Radio Company, LTD.

Rev.B Jan 2016

5/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

6.ELRCTRICAL CHARACTERISTICS CURVES(Con.)

Drain-Source On Resistance

1.6

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

I_D= 0.5 A

V_GS= 4.5V

T_J= 125^OC

1.4

1.2

1.0

0.8

0.6

0.4

V_GS= 4.5 V

T_J= 85^OC

V_GS= 10 V

T_J= 25^OC

T_J= -55^OC

R_ON@T_j= 25 ^oC: 1.2 Ω

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

-50 -25

25 50 75 100 125 150

T_j- Junction Temperature (°C)

Drain-Source On Resistance

I_D- Drain Current (A)

3.0

1.2

V_GS= 10V

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.0

0.8

0.6

0.4

0.2

0.0

T_J= 125^OC

T_J= 85^OC

T_J= 25^OC

T_j=125^oC

T=25^oC

T_J= -55^OC

T_j=-55^oC

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

I_D- Drain Current (A)

V_GS– Gate Voltage (V)

Leshan Radio Company, LTD.

Rev.B Jan 2016

6/7

LBSS139DW1T1G, S-LBSS139DW1T1G

Power MOSFET

7.OUTLINE AND DIMENSIONS

Notes:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

INCHES

MIN NOM MAX MIN NOM MAX

DIM

---

1.10

0.10

---

--- 0.043

--- 0.004

A1 0.00

A2 0.70 0.90 1.00 0.027 0.035 0.039

0.15 0.20 0.25 0.006 0.008 0.01

0.08 0.15 0.22 0.003 0.006 0.009

1.80 2.00 2.20

0.07 0.078 0.086

2.00 2.10 2.20 0.078 0.082 0.086

E1 1.15 1.25 1.35 0.045 0.049 0.053

0.65 BSC

0.026 BSC

0.26 0.36 0.46 0.010 0.014 0.018

0.15 BSC

0.15

0.30

0.10

0.006 BSC

0.01

aaa

bbb

ccc

ddd

0.01

0.00

8.SOLDERING FOOTPRINT

Leshan Radio Company, LTD.

Rev.B Jan 2016

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