LBSS4240LT3G [LRC]

General Purpose Transistors NPN Silicon;


型号：	LBSS4240LT3G
厂家：	LESHAN RADIO COMPANY
描述：	General Purpose Transistors NPN Silicon
文件：	总5页 (文件大小：386K)
中文：	中文翻译
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LBSS4240LT1G

S-LBSS4240LT1G

General Purpose Transistors NPN Silicon

1. FEATURES

●

Low collector-emitter saturation voltage

●

High current capability

●

Improved device reliability due to reduced heat generation

●

We declare that the material of product compliance with

RoHS requirements and Halogen Free.

●

S- prefix for automotive and other applications requiring

SOT23

unique site and control change requirements; AEC-Q101

qualified and PPAP capable.

2. APPLICATIONS

●

Supply line switching circuits

●

Battery management applications

●

DC/DC converter applications

●

Strobe flash units

●

Heavy duty battery powered equipment (motor and lamp drivers).

3. DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBSS4240LT1G

LBSS4240LT3G

3000/Tape&Reel

10000/Tape&Reel

4. MAXIMUM RATINGS(Ta = 25ºC)

Parameter

Symbol

VCEO

VCBO

VEBO

Limits

Unit

Collector-Emitter Voltage

Collector-Base voltage

Emitter-Base Voltage

Collector current-continuoun

Total power dissipation

Junction temperature

0.3

℃

150

Storage temperature

TSTG

-65~+150

5. THERMAL CHARACTERISTICS

Parameter

Symbol

Value

417

Unit

K/W

(Note 1)

(Note 2)

Thermal resistance from junction to ambient

in free air

RθJA

260

1.Device mounted on a printed-circuit board,single sided copper,tinplated and standard footprint.

2.Device mounted on a printed-circuit board,single sided copper,tinplated and mounted pad for collector 1 cm².

Leshan Radio Company, LTD.

Rev.B Oct. 2018

1/5

LBSS4240LT1G,S-LBSS4240LT1G

General Purpose Transistors NPN Silicon

6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )

Characteristic

Symbol

Min.

Typ.

Max.

100

Unit

Collector-Base cut-off current

(IE = 0, VCB = 30 V)

ICBO

Emitter-Base cut-off current

(IC = 0, VEB = 4 V)

IEBO

hFE

100

DC current gain

350

300

150

(IC = 100 mA, VCE = 2 V)

(IC = 500 mA, VCE = 2 V)

(IC = 1 A, VCE = 2 V)

(IC = 2 A, VCE = 2 V)

Collector-Emitter saturation voltage

(IC = 100 mA, IB = 1 mA)

(IC = 500 mA, IB = 50 mA)

(IC = 750 mA, IB = 15 mA)

(IC = 1 A, IB = 50 mA)(Note 3)

(IC = 2 A, IB = 200 mA)(Note 3)

Base-Emitter saturation voltage

(IC = 2 A,IB = 200 mA)(Note 3)

(IC = 2 A,IB = 50 mA)(Note 3)

Base-Emitter turn on voltage

(IC = 100 mA,VCE = 2 V)

Collector capacitance

100

180

320

VCE(sat)

VBE(sat)

1.1

VBE(on)

0.75

(IE = Ie = 0,VCB = 10 V,f = 1 MHz)

Transition frequency

MHz

(IC = 100 mA,VCE = 10 V, f = 100 MHz)

3.Pulse test: t p ≤ 300 μs, δ ≤ 0.02.

100

Leshan Radio Company, LTD.

Rev.B Oct. 2018

2/5

LBSS4240LT1G,S-LBSS4240LT1G

General Purpose Transistors NPN Silicon

(Ta= 25ºC )

7.ELECTRICAL CHARACTERISTICS CURVES

800

IB=18mA

IB=8mA,10mA,12mA,14mA,16m

VCE=2V

700

600

500

400

300

200

100

150℃

2.5

25℃

IB=6mA

IB=4mA

1.5

-55℃

IB=2mA

0.5

0.001

0.01

0.1

VCE,Collector to Emittor Voltage(V)

IC,Collector Current(A)

HFE vs. IC

IC vs. VCE

1.2

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

IC=2A

IC=1.5

IC=1A

IC=0.9

-55℃

25℃

IC=0.7

0.8

0.6

0.4

0.2

IC=0.5A

IC=0.3A

IC=0.1A

150℃

VCE=2V

Ta=25℃

0.00005

0.0005

0.005

0.05

0.001

0.01

0.1

IC,Collector Current(A)

IB,Base Current(A)

VCE(sat) vs. IB

VBE(on) vs. IC

Leshan Radio Company, LTD.

Rev.B Oct. 2018

3/5

LBSS4240LT1G,S-LBSS4240LT1G

General Purpose Transistors NPN Silicon

(Ta= 25ºC )

7.ELECTRICAL CHARACTERISTICS CURVES

(Con.)

0.50

1.2

0.45

IC/IB=20

0.8

0.6

0.4

0.2

0.40

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0.00

-55℃

℃

25℃

150℃

-55℃

IC/IB=20

0.001

0.01

0.1

0.001

0.01

0.1

IC,Collector Current(A)

VBE(sat) vs. IC

VCE(sat) vs. IC

Leshan Radio Company, LTD.

Rev.B Oct. 2018

4/5

LBSS4240LT1G,S-LBSS4240LT1G

General Purpose Transistors NPN Silicon

8.OUTLINE AND DIMENSIONS

Notes:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

INCHES

MIN NOM MAX MIN NOM MAX

DIM

0.89

1.11 0.035 0.04 0.044

0.1 0.001 0.002 0.004

0.5 0.015 0.018 0.02

A1 0.01

0.06

0.44

0.37

0.09

2.80

1.20

1.78

0.10

0.13 0.18 0.003 0.005 0.007

2.9

1.3

1.9

0.2

3.04 0.11 0.114 0.12

1.4 0.047 0.051 0.055

2.04 0.07 0.075 0.081

0.3 0.004 0.008 0.012

L1 0.35

0.54 0.69 0.014 0.021 0.029

H_E

2.10

0°

2.4

---

2.64 0.083 0.094 0.104

10° 0° --- 10°

9.SOLDERING FOOTPRINT

Leshan Radio Company, LTD.

Rev.B Oct. 2018

5/5

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