LDTA113TKT1G_15 [LRC]

Bias Resistor Transistor;


型号：	LDTA113TKT1G_15
厂家：	LESHAN RADIO COMPANY
描述：	Bias Resistor Transistor
文件：	总3页 (文件大小：273K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTA113TKT1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

EMITTER

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

−

VCBO

VCEO

VEBO

−

5 to 10

−

°C

100

Collector Power dissipation

Junction temperature

Storage temperature

200

150

−

Tstg

55 to 150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

LDTA113TKT1G

LDTA113TKT3G

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−50

−5

−

100

0.7

−

Typ.

−

250

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^CEO

BV^EBO

−50µA

−1mA

−50µA

−

CBO

EBO

CE(sat)

−0.5

−0.3

600

1.3

−

µA

−50V

−4V

Emitter cutoff current

= −5mA / −0.25mA

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

−

kΩ

MHz

−1mA , V^CE

−5V

−

∗

−10V , I

=5mA , f

100MHz

250

Transition frequency

Characteristics of built-in transistor

∗

1/3

LESHAN RADIO COMPANY, LTD.

LDTA113TKT1G

zElectrical characteristic curves

−1m

V^CE= −5V

/I =20

500

−500m

200

100

Ta=100°C

25°C

−200m

−100m

Ta=100°C

25°C

−40°C

−50m

−20m

−10m

−5m

−2m

−1m

−100µ −200µ

−500µ −1m

−2m

−5m −10m −20m

−50m −100m

−100µ −200µ

−500µ −1m

−2m

−5m −10m −20m

−50m −100m

COLLECTOR CURRENT : I

(A)

_C(A)

COLLECTOR CURRENT : I

Fig.1 DC Current gain

vs. Collector Current

Fig.2 Collector-emitter saturation voltage

vs. Collector Current

2/3

LESHAN RADIO COMPANY, LTD.

LDTA113TKT1G

SC-89

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2.CONTROLLING DIMENSION: MILLIMETERS

3.MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE

MATERIAL.

4.463C-01 OBSOLETE, NEW STANDARD 463C-02.

3/3

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