LDTA113TKT3G [LRC]
Bias Resistor Transistor;型号: | LDTA113TKT3G |
厂家: | LESHAN RADIO COMPANY |
描述: | Bias Resistor Transistor |
文件: | 总3页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA113TKT1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
COLLECTOR
1
BASE
2
zAbsolute maximum ratings (Ta=25°C)
EMITTER
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
−
VCBO
VCEO
VEBO
50
−
V
50
−
+
V
5 to 10
−
I
C
mA
mW
°C
°C
100
Collector Power dissipation
Junction temperature
Storage temperature
Pc
Tj
200
150
+
−
Tstg
55 to 150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
1
3000/Tape & Reel
10000/Tape & Reel
LDTA113TKT1G
LDTA113TKT3G
O2
O2
1
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
−50
−50
−5
−
−
−
100
0.7
−
Typ.
−
−
−
−
−
−
250
1
Max.
−
−
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
V
V
I
I
I
C
=
=
−50µA
−1mA
−50µA
C
−
V
E
=
I
CBO
EBO
CE(sat)
FE
−0.5
−0.5
−0.3
600
1.3
−
µA
µA
V
V
V
CB
=
=
−50V
−4V
I
EB
Emitter cutoff current
V
IC
/I
B
= −5mA / −0.25mA
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
h
−
kΩ
MHz
IC
=
−1mA , VCE
=
−5V
R
1
−
∗
V
CB
=
−10V , I
E
=5mA , f
=
100MHz
fT
250
Transition frequency
Characteristics of built-in transistor
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTA113TKT1G
zElectrical characteristic curves
1k
−1m
VCE= −5V
I
C
B
/I =20
500
−500m
200
100
Ta=100°C
25°C
−200m
−100m
Ta=100°C
25°C
−40°C
−40°C
50
−50m
20
10
−20m
−10m
5
−5m
2
1
−2m
−1m
−100µ −200µ
−500µ −1m
−2m
−5m −10m −20m
−50m −100m
−100µ −200µ
−500µ −1m
−2m
−5m −10m −20m
−50m −100m
COLLECTOR CURRENT : I
C
(A)
C (A)
COLLECTOR CURRENT : I
Fig.1 DC Current gain
vs. Collector Current
Fig.2 Collector-emitter saturation voltage
vs. Collector Current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA113TKT1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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