LDTA113ZET1G [LRC]
Bias Resistor Transistor;
| 型号： | LDTA113ZET1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor 晶体管 |
| 文件： | 总3页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA113ZET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Parameter
Symbol
Limits
Unit
EMITTER
Supply voltage
Input voltage
V
CC
IN
−50
−10 to +5
V
V
V
−
−
I
O
100
100
mA
Output current
I
C(Max.)
Power dissipation
P
D
200
150
mW
°C
°C
Junction temperature
Storage temperature
Tj
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
1
10
3000/Tape & Reel
10000/Tape & Reel
LDTA113ZET1G
LDTA113ZET3G
E8
E8
1
10
zElectrical characteristics (Ta=25°C)
1/3
LESHAN RADIO COMPANY, LTD.
LDTA113ZET1G
zElectrical characteristic curves
2/3
LESHAN RADIO COMPANY, LTD.
LDTA113ZET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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