LDTA114EET1 [LRC]

Digital transistors (built-in resistors); 数字晶体管(内置电阻)
LDTA114EET1
型号: LDTA114EET1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Digital transistors (built-in resistors)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总3页 (文件大小:213K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Digital transistors (built-in resistors)  
LDTA114EET1  
zFeatures  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
3
1
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
2
SC-89  
3) Only the on/off conditions need to be set for  
operation, making device design easy.  
OUT  
R1  
zDevice marking  
LDTA114EET1=6A  
R2  
GND (+)  
OUT  
IN  
zAbsolute maximum ratings (Ta=25°C)  
GND  
Parameter  
Symbol  
Value  
Unit  
V
50  
40~+10  
50  
VCC  
Supply voltage  
Input voltage  
VIN  
V
I
O
mA  
mA  
Output current  
I
C(Max.)  
Pd  
100  
150  
Power dissipation  
mW  
°C  
Tj  
150  
Junction temperature  
Storage temperature  
Tstg  
55~+150  
°C  
LDTA114EET1-1/3  
LESHAN RADIO COMPANY, LTD.  
LDTA114EET1  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
0.5  
Unit  
V
Conditions  
=−100µA  
=−2mA  
=−10mA/0.5mA  
=−5V  
CC=−50V, V  
V
I(off)  
I(on)  
3.0  
V
CC=−5V, I  
=−0.3V, I  
/I  
O
Input voltage  
V
V
O
O
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
0.88  
0.5  
V
mA  
µA  
I
O
I
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=0V  
G
I
30  
7
O
=−5V, I  
O
=−5mA  
R1  
10  
1
13  
kΩ  
R
2
/R  
1
0.8  
1.2  
Transition frequency  
f
T
250  
MHz  
V
CE=−10V, I  
E=5mA, f=100MHz  
Transition frequency of the device  
!Electrical characteristic curves  
100  
1k  
10m  
V
O
=−0.3V  
VO=−5V  
V
CC=−5V  
5m  
500  
50  
Ta=100°C  
25°C  
40°C  
Ta=100°C  
25°C  
40°C  
2m  
200  
100  
50  
20  
10  
5  
1m  
500µ  
Ta=−40°C  
25°C  
100°C  
200µ  
100µ  
50µ  
20  
10  
2  
1  
20µ  
10µ  
5µ  
500m  
5
2
1
200m  
100m  
2µ  
1µ  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m100m  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m 100m  
0
0.5 1.0 1.5 2.0 2.5 3.0  
OUTPUT CURRENT : I (A)  
O
OUTPUT CURRENT : I (A)  
O
INPUT VOLTAGE : VI(off) (V)  
Fig.3 DC current gain vs. output  
current  
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
1  
lO/lI=20  
500m  
Ta=100°C  
25°C  
40°C  
200m  
100m  
50m  
20m  
10m  
5m  
2m  
1m  
100µ −200µ −500µ −1m 2m  
5m 10m 20m 50m 100m  
OUTPUT CURRENT : I (A)  
O
Fig.4 Output voltage vs. output current  
LDTA114EET1-2/3  
LESHAN RADIO COMPANY, LTD.  
LDTA114EET1  
SC-89  
NOTES:  
1.DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2.CONTROLLING DIMENSION: MILLIMETERS  
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.  
LDTA114EET1-3/3  

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