LDTA124GET3G [LRC]
Bias Resistor Transistor;
| 型号： | LDTA124GET3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor 晶体管 |
| 文件： | 总3页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA124GET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
COLLECTOR
1
•
We declare that the material of product compliance with
RoHS requirements.
BASE
R2
2
z Absolute maximum ratings (Ta=25°C)
EMITTER
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−50
−50
Unit
V
V
CBO
V
CEO
V
EBO
V
−5
V
Collector current
I
C
−100
mA
mW
C
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
200
150
Tstg
−
55 to +150
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
Q2
-
22
3000/Tape & Reel
10000/Tape & Reel
LDTA124GET1G
LDTA124GET3G
Q2
-
22
zElectrical characteristics (T 25°C)
Parameter
Symbol
Min.
−50
−50
−5
Typ.
−
−
−
−
−
−
−
22
Max.
−
−
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
V
V
I
I
I
C
=
=
−50µA
−1mA
−330µA
C
V
E
=
−
I
CBO
EBO
CE(sat)
FE
−
−0.5
−260
−0.3
−
28.6
−
µA
µA
V
V
CB
=
=
−50V
−4V
Emitter cutoff current
I
−140
−
V
EB
Collector-emitter saturation voltage
DC current transfer ratio
V
IC
=
=
−10mA , I
B
=
−0.5mA
h
56
−
kΩ
MHz
IC
−5mA , VCE
=
−5V
−
Emitter-base resistance
R
15.4
−
f
T
250
V
CE
=
−10V , I
E
=
=
5mA , f 100MHz
Transition frequency
∗
Transition frequency of the device.
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTA124GET1G
zElectrical characteristic curves
1k
1
VCE=5V
IC
/
IB=20/1
Ta=100°C
500
500m
Ta=100°C
Ta=25°C
Ta=25°C
200
100
50
200m
100m
50m
Ta= −40°C
Ta= −40°C
20
20m
10
5
10m
5m
2
1
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m
50m 100m
100µ 200µ 500µ 1m 2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
(A)
C
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA124GET1G
SC-89
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
3/3
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