LDTC114EET1G [LRC]
Bias Resistor Transistor;
| 型号： | LDTC114EET1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor 晶体管 |
| 文件： | 总4页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LDTC114EET1G
S-LDTC114EET1G
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
1. FEATURES
● Simplifies circuit design
● Reduces board space and component count
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
● S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
SC89
3 COLLECTOR
R1
1 BASE
2. DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1(K) R2(K)
Shipping
R2
LDTC114EET1G
LDTC114EET3G
8A
8A
10
10
10
10
3000/Tape&Reel
10000/Tape&Reel
2 EMITTER
3. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VCEO
VCBO
IC
Limits
50
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
50
Vdc
Collector Current — Continuous
100
mAdc
4. THERMAL CHARACTERISTICS
Parameter
Symbol
Limits
Unit
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC
Derate above 25ºC
PD
200
1.6
mW
mW/ºC
ºC/W
Thermal Resistance,
RΘJA
600
Junction–to–Ambient(Note 1)
Junction and Storage temperature
1. FR–5 @ Minimum Pad.
TJ,Tstg −55∼+150 ºC
Leshan Radio Company, LTD.
Rev.O Mar 2016
1/4
LDTC114EET1G, S-LDTC114EET1G
Bias Resistor Transistor
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
-
Unit
V
Collector–Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
VBR(CEO)
VBR(CBO)
ICBO
50
50
-
-
-
-
-
-
V
Collector–Base Breakdown Voltage
(IC = 10 μAdc, IE = 0)
-
nA
nA
mA
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
100
500
0.5
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
-
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
-
ON CHARACTERISTICS (Note 2.)
DC Current Gain
HFE
VCE(sat)
VOL
(IC = 5.0 mAdc, VCE = 10 Vdc)
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.3 mAdc)
Output Voltage (on)
35
-
60
-
-
V
V
0.25
0.2
(VCC = 5.0 V, VB = 2.5 V, RL =1.0KΩ)
Output Voltage (on)
-
-
VOH
V
(VCC = 5.0 V, VB = 0.5 V, RL =1.0KΩ)
Input Resistor
4.9
7
-
-
R1
10
1
13
1.2
KΩ
Resistor Ratio
R1/R2
0.8
2. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%
Leshan Radio Company, LTD.
Rev.O Mar 2016
2/4
LDTC114EET1G, S-LDTC114EET1G
Bias Resistor Transistor
6.ELECTRICAL CHARACTERISTICS CURVES
1
300
VCE=10V
IC/IB=10
150℃
250
150℃
85℃
85℃
200
25℃
0.1
150
-55℃
100
50
0
25℃
-55℃
0.01
0
20
40
60
80
0.1
1
10
100
IC,Collector Current(mA)
IC,Collector Current(mA)
DC Current Gain
VCE(sat) vs. IC
16
14
12
10
8
100
10
Vo=0.2
V
Vo=5V
150℃
85℃
1
6
25℃
-55℃,25℃,85℃,150℃
0.1
0.01
4
-55℃
2
0
0.1
1
10
100
0
2
4
6
8
IC,Collector Current(mA)
Vin,Input Voltage(V)
Vin vs. IC
IC vs. Vin
Leshan Radio Company, LTD.
Rev.O Mar 2016
3/4
LDTC114EET1G, S-LDTC114EET1G
Bias Resistor Transistor
7.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM MAX MIN NOM MAX
1.50 1.60 1.70 0.059 0.063 0.067
0.75 0.85 0.95 0.030 0.034 0.040
0.60 0.70 0.80 0.024 0.028 0.031
0.23 0.28 0.33 0.009 0.011 0.013
DIM
A
B
C
D
G
H
J
0.50BSC
0.53REF
0.020BSC
0.021REF
0.10 0.15 0.20 0.004 0.006 0.008
0.30 0.40 0.50 0.012 0.016 0.02
K
L
1.10REF
0.043REF
M
N
S
---
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10°
10°
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10°
10°
1.50 1.60 1.70 0.059 0.063 0.067
8.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.O Mar 2016
4/4
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