LDTD123YLT1G_15 [LRC]
Bias Resistor Transistor;
| 型号： | LDTD123YLT1G_15 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总3页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTD123YLT1G
S-LDTD123YLT1G
Applications
•
Inverter, Interface, Driver
• Features
3
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2
SOT–23
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
R1
R2
COLLECTOR
1
zAbsolute maximum ratings (Ta=25°C)
BASE
2
Limits
Parameter
Supply voltage
Symbol
Unit
EMITTER
V
CC
50
−5 to +12
500
V
V
Input voltage
V
IN
Output current
I
C
mA
mW
C
Power dissipation
Junction temperature
Storage temperature
Pd
Tj
200
150
Tstg
−55 to +150
C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
F62
R1 (K)
R2 (K)
Shipping
LDTD123YLT1G
S-LDTD123YLT1G
2.2
10
3000/Tape & Reel
10000/Tape & Reel
LDTD123YLT3G
S-LDTD123YLT3G
F62
2.2
10
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Symbol Min.
Typ.
Max.
0.3
−
Unit
V
Conditions
V
V
I(off)
I(on)
−
2
−
−
V
CC
=
5V, I
O
=
100µA
VO
=
0.3V, I
O
=
20mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
3.6
0.5
−
V
mA
µA
−
I
O
/I
I
=
50mA/2.5mA
5V
50V, V
5V, I 50mA
II
−
V
V
V
I
=
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
IO(off)
−
−
CC
=
I
=0V
G
I
56
1.54
3.6
−
−
O
=
O
=
R
1
2.2
4.5
200
2.86
5.5
−
kΩ
−
−
−
R
/R
2 1
fT
MHz
V
CE
=
10V, I
E
=
−50mA, f
=100MHz
∗
Transition frequency of the device
∗
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LDTD123YLT1G
;S-LDTD123YLT1G
zElectrical characteristic curves
100
10m
5m
CC
=5V
V
O
V =0.3V
50
2m
20
10
5
1m
500µ
Ta=100 C
25 C
200µ
100µ
50µ
Ta= −40 C
25 C
−40 C
100 C
2
1
20µ
10µ
5µ
500m
200m
100m
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
500µ 1m 2m 5m 10m 20m 50m100m 200m 500m
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
1
O
V =5V
l
O
/l =20
I
500m
500
Ta=100 C
25 C
200m
200
100
50
−40 C
Ta=100 C
25 C
100m
50m
−40 C
20m
10m
5m
20
10
5
2
1
2m
1m
500µ1m 2m
5m 10m 20m 50m 100m200m 500m
500µ 1m 2m 5m 10m 20m 50m 100m200m 500m
OUTPUT CURRENT : I
(A)
O
OUTPUT CURRENT : I
(A)
O
Fig.3 DC current gain vs. output current
Fig.4 Output voltage vs. output current
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LDTD123YLT1G
;S-LDTD123YLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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