LIMN10T3G [LRC]

Switching Diode LIMN10T1G;
LIMN10T3G
型号: LIMN10T3G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Switching Diode LIMN10T1G

测试 二极管
文件: 总3页 (文件大小:174K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Switching Diode  
!Applications  
LIMN10T1G  
S-LIMN10T1G  
Ultra high speed switching  
6
5
4
!Features  
1) Multiple diodes in one small surface mount package.  
2) Diode characteristics are matched in the package.  
3) PbFree Package is Available.  
1
2
3
4)  
S- Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable.  
TSOP-6  
6
5
4
!Construction  
Silicon epitaxial planar  
!
Device Marking Ordering Information  
2
3
1
Device  
Marking  
Shipping  
LIMN10T1G  
S-LIMN10T1G  
N10  
3000 Tape&Reel  
LIMN10T3G  
S-LIMN10T3G  
N10  
10000 Tape&Reel  
!Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
VRM  
VR  
Limits  
80  
Unit  
V
Peak reverse voltage  
DC reverse voltage  
Peak forward current  
Mean rectifying current  
Surge current (1us)  
Power dissipation (total)  
Junction temperature  
Storage temperature  
80  
V
I FM  
300  
100  
4
mA  
mA  
A
I O  
Isurge  
1
Pd  
Tj  
mW  
°C  
300  
150  
Tstg  
– 55 ~ +150  
°C  
1 Not to exceed 200mW per element.  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
1.2  
0.1  
3.5  
4
Unit  
V
Conditions  
I F=100mA  
Forward voltage  
VF  
IR  
CT  
trr  
Reverse current  
µA  
pF  
ns  
VR=70V  
Capacitance between terminals  
Reverse recovery time  
VR=6V , f=1MHz  
VR=6V , IF=5mA  
.
Rev.O 1/3  
LESHAN RADIO COMPANY, LTD.  
LIMN10T1G,  
S-LIMN10T1G  
2.0 k  
100 µH  
0.1 µF  
820 Ω  
+10 V  
I F  
t p  
t r  
t
0.1µF  
I F  
t rr  
t
10%  
90%  
D.U.T.  
i R(REC) = 1.0 mA  
50 INPUT  
SAMPLING  
OSCILLOSCOPE  
50 OUTPUT  
PULSE  
GENERATOR  
I R  
OUTPUT PULSE  
INPUT SIGNAL  
(I F = I R = 10 mA; MEASURED  
V R  
= 1.0 mA)  
at i R(REC)  
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (I F ) of 10mA.  
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.  
Notes: 3. t p » t rr  
Figure 1. Recovery Time Equivalent Test Circuit  
CURVES APPLICABLE TO EACH DIODE  
100  
10  
10  
T A = 150°C  
T A = 85°C  
T A = 125°C  
1.0  
0.1  
T
A = – 40°C  
T A = 85°C  
1.0  
0.1  
T
T
A = 55°C  
A = 25°C  
T A = 25°C  
0.01  
0.001  
0
10  
20  
30  
40  
50  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V R , REVERSE VOLTAGE (VOLTS)  
V F , FORWARD VOLTAGE (VOLTS)  
Figure 3. Leakage Current  
Figure 2. Forward Voltage  
0.68  
0.64  
0.60  
0.56  
0.52  
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)  
Figure 4. Capacitance  
Rev.O 2/3  
LESHAN RADIO COMPANY, LTD.  
LIMN10T1G,  
S-LIMN10T1G  
TSOP-6  
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.015  
0.007  
0.118  
0.059  
0.037  
0.016  
0.108  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.90  
0.01  
0.25  
0.10  
2.90  
1.30  
0.85  
0.20  
2.50  
0°  
NOM  
1.00  
0.06  
0.37  
0.18  
3.00  
1.50  
0.95  
0.40  
2.75  
MAX  
1.10  
0.10  
0.50  
0.26  
3.10  
1.70  
1.05  
0.60  
3.00  
10°  
MIN  
0.035  
0.001  
0.010  
0.004  
0.114  
0.051  
0.034  
0.008  
0.099  
0°  
MAX  
0.043  
0.004  
0.020  
0.010  
0.122  
0.067  
0.041  
0.024  
0.118  
10°  
q
c
A
H
E
0.05 (0.002)  
q
L
A1  
SOLDERING FOOTPRINT*  
2.4  
0.094  
0.95  
0.037  
1.9  
0.074  
0.95  
0.037  
0.7  
0.028  
1.0  
0.039  
Rev.O 3/3  

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