LMBT918LT1G_11 [LRC]
VHF / UFH Transistor NPN Silicon RoHS requirements.; VHF / UFH晶体管NPN硅RoHS要求。
| 型号： | LMBT918LT1G_11 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | VHF / UFH Transistor NPN Silicon RoHS requirements. |
| 文件： | 总3页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
VHF / UFH Transistor
NPN Silicon
z
compliance with RoHS requirements.
We declare that the material of product
LMBT918LT1G
Ordering Information
Device
Marking
M3B
Shipping
3
3000/Tape&Reel
LMBT918LT1G
1
10000/Tape&Reel
LMBT918LT3G
M3B
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
15
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
3
COLLECTOR
30
Vdc
3.0
50
Vdc
1
BASE
Collector Current — Continuous
mAdc
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
556
°C/W
300
2.4
mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
°C
TJ , Tstg
–55 to +150
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 3.0 mAdc, I B = 0)
V (BR)CEO
15
30
—
—
Vdc
Vdc
Collector–Base Breakdown Voltage
(I C = 1.0 µAdc, I E = 0)
V (BR)CBO
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
I CBO
3.0
—
—
Vdc
Collector Cutoff Current
50
nAdc
( V CB = 15 Vdc, I E = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LMBT918LT1G
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
hFE
20
––
—
––
0.4
1.0
––
(I C = 3.0 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
VCE(sat)
V BE(sat)
Vdc
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
f T
600
—
MHz
pF
C obo
(V CB = 0 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
—
—
3.0
1.7
C ibo
NF
—
—
30
11
2.0
6.0
—
pF
dB
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1)
Power Output
P out
G pe
mW
dB
(I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain
(I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
—
V CC
V BB
EXTERNAL
100 k
1000 pF BYPASS
0.018 µF
RF
VM
C
0.018 µF
50 Ω
3
G
0.018 µF
0.018 µF
NF TEST CONDITIONS
I C = 1.0 mA
V CE = 6.0 VOLTS
R S = 50 Ω
f = 60 MHz
G pe TEST CONDITIONS
I C = 6.0 mA
V CE = 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LMBT918LT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev.O 3/3
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