LP2305LT1G [LRC]
30V P-Channel Enhancement-Mode MOSFET;
| 型号： | LP2305LT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | 30V P-Channel Enhancement-Mode MOSFET |
| 文件： | 总5页 (文件大小：844K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LP2305LT1G
S-LP2305LT1G
30V P-Channel Enhancement-Mode MOSFET
1. FEATURES
●
VDS = -30V
●
RDS(ON), Vgs@-10V, Ids@-4.2A = 70mΩ
●
RDS(ON), Vgs@-4.5V, Ids@-4.0A = 85mΩ
●
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 130mΩ
SOT23(TO-236)
●
We declare that the material of product compliance with
RoHS requirements and Halogen Free.
●
S- prefix for automotive and other applications requiring
unique site and control change requirements; AEC-Q101
qualified and PPAP capable.
2. APPLICATIONS
●
Advanced trench process technology
●
High density cell design for ultra low on-resistance.
3. DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LP2305LT1G
LP2305LT3G
P05
3000/Tape&Reel
10000/Tape&Reel
P05
4. MAXIMUM RATINGS(Ta = 25ºC)
Parameter
Symbol
VDSS
VGS
Limits
Unit
V
Drain–Source Voltage
-30
Gate–to–Source Voltage – Continuous
Drain Current
±12
V
A
– Continuous TA = 25°C
– Pulsed (Note 1)
ID
-4.2
-30
IDM
5. THERMAL CHARACTERISTICS
Parameter
Symbol
PD
Limits
1.4
Unit
W
Power Dissipation
Thermal Resistance,
RΘJA
140
ºC/W
Junction–to–Ambient(Note 2)
Junction and Storage temperature
TJ,Tstg −55∼+150
ºC
1.Repetitive Rating: Pulse width limited by the maximum junction temperature.
2.1-in² 2oz Cu PCB board.
Leshan Radio Company, LTD.
Rev.D Nov. 2018
1/5
LP2305LT1G, S-LP2305LT1G
30V P-Channel Enhancement-Mode MOSFET
6. ELECTRICAL CHARACTERISTICS (Ta= 25ºC )
OFF CHARACTERISTICS
Characteristic
Symbol
Min.
Typ.
Max.
-
Unit
Vdc
Drain–Source Breakdown Voltage
(VGS = 0, ID = -250μAdc)
VBRDSS
IDSS
-30
-
-
-
-
μAdc
nAdc
nAdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = -24 Vdc)
-
-
-
-1
Gate–Body Leakage Current, Forward
(VGS = 12 Vdc)
IGSSF
IGSSR
100
-100
Gate–Body Leakage Current, Reverse
(VGS = - 12 Vdc)
ON CHARACTERISTICS (Note 3)
Forward Transconductance
(VDS = -5Vdc, ID = -5Adc)
Gate Threshold Voltage
S
gfs
7.0
11
-
-
Vdc
mΩ
VGS(th)
RDS(on)
(VDS = VGS, ID = -250μAdc)
Static Drain–Source On–State Resistance
(VGS = -10 Vdc, ID = -4.2 Adc)
(VGS = -4.5 Vdc, ID = -4 Adc)
(VGS = -2.5 Vdc, ID = -1 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
-0.6
-1.3
-
-
-
53
64
86
70
85
130
pF
pF
pF
Ciss
Coss
Crss
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Output Capacitance
-
-
-
826.18
90.74
53.18
-
-
-
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
Reverse Transfer Capacitance
(VGS = 0 V, f = 1.0MHz,VDS= -15 V)
SWITCHING CHARACTERISTICS
Turn-On Delay Time
ns
td(on)
tr
-
-
-
-
11.36
2.32
-
-
-
-
(VDD = -15V, RL= 3.6Ω
ID = -1A, VGEN = -10V
Rise Time
Turn-Off Delay Time
Fall Time
td(off)
tf
34.88
3.52
RG = 6Ω)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward Voltage
VSD
V
(VGS = 0 Vdc, ISD = -1 Adc)
-
-
-1
3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%.
Leshan Radio Company, LTD.
Rev.D Nov. 2018
2/5
LP2305LT1G, S-LP2305LT1G
30V P-Channel Enhancement-Mode MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES
5.0
6
5
4
3
2
1
0
VGS=-3V,-4V,-5V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VDS=-5.0V
VGS=-2.0V
25℃
VGS=-1.8V
-55℃
150℃
VGS=-1.6V
Ta=25℃
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
VDS,Drain to Source Voltage(V)
VGS,Gate to Source Voltage(V)
ID vs. VDS
ID vs. VGS
5
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
VGS=-2.5V
0.5
VGS=-4.5V
VGS=-10V
150℃
25℃
-55℃
0.05
0.005
0.2
0.4
0.6
0.8
1
1
2
3
4
5
6
ID,Drain Current(A)
VSD,Diode Forward Voltage(V)
RDS(on) vs. ID
IS vs. VSD
Leshan Radio Company, LTD.
Rev.D Nov. 2018
3/5
LP2305LT1G, S-LP2305LT1G
30V P-Channel Enhancement-Mode MOSFET
7.ELECTRICAL CHARACTERISTICS CURVES(Con.)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID=-4.0A
VGS=-4.5V,ID=-4.0A
25℃
VGS=-10V,ID=-4.2A
150℃
-55℃
0
2
4
6
8
10
-50 -25
0
25
50
75 100 125 150
VGS,Gate to Sourcce Voltage(V)
Tj,Temperature(℃)
RDS(on) vs. VGS
RDS(on) vs. Tj
1200
1000
800
600
400
200
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
f=1.0MHz
ID=-250uA
Ta=25℃
Ciss
Coss
Crss
0
-50 -25
0
25
50
75 100 125 150
10
20
30
Tj,Temperature (℃)
VDS Drain To Source Voltage(V)
Capacitance
VGSTH vs. Tj
Leshan Radio Company, LTD.
Rev.D Nov. 2018
4/5
LP2305LT1G, S-LP2305LT1G
30V P-Channel Enhancement-Mode MOSFET
8.OUTLINE AND DIMENSIONS
Notes:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
INCHES
MIN NOM MAX MIN NOM MAX
DIM
A
0.89
1
1.11 0.035 0.04 0.044
0.1 0.001 0.002 0.004
0.5 0.015 0.018 0.02
A1 0.01
0.06
0.44
b
c
0.37
0.09
2.80
1.20
1.78
0.10
0.13 0.18 0.003 0.005 0.007
D
E
e
L
2.9
1.3
1.9
0.2
3.04 0.11 0.114 0.12
1.4 0.047 0.051 0.055
2.04 0.07 0.075 0.081
0.3 0.004 0.008 0.012
L1 0.35
0.54 0.69 0.014 0.021 0.029
HE
2.10
0°
2.4
---
2.64 0.083 0.094 0.104
10° 0° --- 10°
θ
9.SOLDERING FOOTPRINT
Leshan Radio Company, LTD.
Rev.D Nov. 2018
5/5
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