M1MA152KT1 [LRC]

Single Silicon Switching Diodes; 单硅开关二极管
M1MA152KT1
型号: M1MA152KT1
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

Single Silicon Switching Diodes
单硅开关二极管

二极管 开关
文件: 总2页 (文件大小:60K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LESHAN RADIO COMPANY, LTD.  
Single Silicon Switching Diodes  
M1MA151KT1  
M1MA152KT1  
These Silicon Epitaxial Planar Diodes are designed for use in ultra  
high speed switching applications. These devices are housed in the SC-  
59 package which is designed for low power surface mount applications.  
Fast t rr , < 3.0 ns  
SC-59PACKAGE  
SINGLESILICON  
SWITCHINGDIODES  
40/80 V-100mA  
Low CD , < 2.0 pF  
Available in 8 mm Tape and Reel  
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.  
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.  
SURFACEMOUNT  
CATHODE  
3
3
2
1
CASE 318D–03, STYLE2  
SC–59  
2
1
ANODE NO CONNECTION  
MAXIMUM RATINGS (T A = 25°C)  
Rating  
Symbol  
Value  
40  
Unit  
Reverse Voltage  
M1MA151KT1  
M1MA152KT1  
M1MA151KT1  
M1MA152KT1  
V R  
Vdc  
80  
Peak Reverse Voltage  
V RM  
40  
Vdc  
80  
Forward Current  
IF  
100  
225  
500  
mAdc  
mAdc  
mAdc  
Peak Forward Current  
Peak Forward Surge Current  
I FM  
(1)  
I FSM  
THERMAL CHARACTERISTICS  
Rating  
Symbo  
PD  
lMax  
200  
Unit  
mW  
°C  
Power Dissipation  
Junction Temperature  
TJ  
150  
Storage Temperature  
T stg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (T A = 25°C)  
Characteristic  
Reverse Voltage Leakage Current M1MA151KT1  
M1MA152KT1  
Symbol  
I R  
Condition  
V R = 35 V  
V R = 75 V  
I F = 100 mA  
I R = 100 µA  
Min  
Max  
0.1  
0.1  
1.2  
Unit  
µAdc  
Forward Voltage  
V
Vdc  
Vdc  
F
Reverse Breakdown Voltage  
M1MA151KT1  
M1MA152KT1  
V R  
40  
80  
Diode Capacitance  
CD  
V R = 0, f = 1.0 MHz  
I F = 10 mA, V R = 6.0 V,  
RL = 100, Irr = 0.1 I R  
2.0  
3.0  
pF  
ns  
(2)  
Reverse Recovery Time  
trr  
1. t = 1 SEC  
2. t rr Test Circuit  
H2–1/2  
LESHAN RADIO COMPANY, LTD.  
M1MA151KT1 M1MA152KT1  
OUTPUT PULSE  
INPUT PULSE  
RECOVERY TIME EQUIVALENT TEST CIRCUIT  
t
r
t
p
t
rr  
I
F
t
t
10%  
90%  
R
L
I rr = 0.1 I  
R
V R  
I F = 10 mA  
R = 6 V  
R L = 100  
t p = 2 µs  
V
t r = 0.35 ns  
DEVICE MARKING—EXAMPLE  
Marking Symbol  
Type No.  
151K  
152K  
MH X  
Symbol  
MH  
MI  
The “X” represents a smaller alpha digit Date Code. The Date Code  
indicates the actual month in which the part was manufactured.  
H2–2/2  

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