MMB3904LT1 [LRC]
General Purpose Transistor(NPN Silicon); 通用晶体管（ NPN硅）
| 型号： | MMB3904LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistor(NPN Silicon) |
| 文件： | 总6页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
3
MMBT3904LT1
COLLECTOR
1
BASE
3
2
EMITTER
1
MAXIMUM RATINGS
2
Rating
Symbol
V CEO
V CBO
V EBO
I C
Value
40
Unit
Vdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
60
Vdc
6.0
Vdc
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
°C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
40
60
6.0
—
—
—
—
50
50
Vdc
Vdc
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
Vdc
Base Cutoff Current
nAdc
nAdc
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
I CEX
—
( V CE = 30Vdc, I EB = 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle <2.0%.
O11–1/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS (3)
DC Current Gain(1)
hFE
––
(I C =0.1 mAdc, V CE =1.0 Vdc)
(I C = 1.0 mAdc, V CE = 1.0 Vdc)
(I C = 10 mAdc, V CE = 1.0 Vdc)
(I C = 50mAdc, V CE = 1.0Vdc)
(I C = 100mAdc, V CE =1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)(3)
(I C = 50 mAdc, I B = 5.0mAdc)
Base–Emitter Saturation Voltage(3)
(I C = 10 mAdc, I B = 1.0mAdc)
(I C = 50mAdc, I B = 5.0mAdc )
40
70
––
––
100
60
300
––
30
––
VCE(sat)
Vdc
Vdc
––
––
0.2
0.3
V BE(sat)
0.65
––
0.85
0.95
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
f T
300
––
MHz
C obo
C ibo
h ie
––
––
4.0
8.0
10
pF
pF
(V CB = 5.0Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5Vdc, I C = 0, f = 1.0 MHz)
Input Impedancen
1.0
0.5
100
1.0
—
pF
(V CE = 10Vdc, I C = 1.0mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
h re
8.0
400
40
X10 –4
—
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
h fe
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance
h oe
NF
θmhos
dB
(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Noise Figure
5.0
(V CE = 5.0 Vdc, I C = 100µAdc, R S = 1.0 k Ω, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 3.0 Vdc,V BE = –0.5Vdc
I C = 10 mAdc, I B1 = 1.0mAdc)
(V CC = 3.0Vdc,
t d
t r
t s
t f
—
—
—
—
35
35
ns
ns
200
50
I C = 10 mAdc,I B1 = I B2 = 10 mAdc)
3. Pulse Test: Pulse Width
<300 µs, Duty Cycle <2.0%.
O11–2/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
+3 V
+3 V
10 < t 1 < 500 µs
t 1
DUTY CYCLE = 2%
300 ns
+10.9 V
DUTY CYCLE = 2%
275
275
+10.9 V
< 1 ns
10 k
10 k
0
–0.5 V
C
S < 4 pF*
C S < 4 pF*
1N916
–9.1
* Total shunt capacitance of test jig and connectors
< 1 ns
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
J = 125°C
T
5000
10
V CC = 40 V
C /I B = 10
3000
2000
7.0
5.0
I
1000
700
C ibo
3.0
2.0
500
Q
T
300
200
C obo
Q A
100
70
1.0
50
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 40
1.0
2.0 3.0 5.0 7.0 10
20 30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
O11–3/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
500
500
I
C /I B = 10
V CC = 40 V
I C /I B = 10
300
200
300
200
100
70
100
70
t
r @ V CC = 3.0 V
50
50
30
20
30
20
40 V
15 V
10
7
10
7
2.0 V
t d @ V OB = 0 V
5
5
1.0
2.0 3.0 5.0 7.010
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.010
20 30 50 70 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
500
500
t ’s = t s –1 /8 tf
I B1 = I B2
V
CC = 40 V
300
200
300
200
I
C /I B =10
I
C /I B =20
I B1 = I B2
I C /I B = 20
100
70
100
70
50
I
C /I B =20
C /I B =10
50
I
30
20
30
20
I
C /I B = 10
10
7
10
7
5
5
1.0
2.0 3.0 5.0 7.010
20 30 50 70 100
200
1.0
2.0 3.0 5.0 7.010
20 30 50 70 100
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V CE = 5.0 Vdc, T A = 25°C, Bandwidth = 1.0 Hz)
14
12
f = 1.0 kHz
SOURCE RESISTANCE=200Ω
I C = 1.0 mA
12
10
8
I C = 1.0 mA
10
8
I
C = 0.5 mA
SOURCE RESISTANCE =200Ω
I C = 0.5 mA
I C = 50 µA
C = 100 µA
6
I
SOURCE RESISTANCE =1.0k
C = 50µA
6
I
4
4
2
2
SOURCE RESISTANCE=500Ω
I C = 100 µA
0
0
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
0.1 0.2
0.4
1.0 2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R S , SOURCE RESISTANCE (kΩ)
Figure 9.
Figure 10.
O11–4/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
h PARAMETERS
(V CE = 10 Vdc, f = 1.0 kHz, T A = 25°C)
100
50
300
200
20
10
5
100
70
50
2
1
30
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
Figure 11. Current Gain
10
7.0
5.0
20
10
5.0
3.0
2.0
2.0
1.0
0.5
1.0
0.7
0.5
0.2
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
2.0
T J = +125°C
+25°C
V CE = 1.0 V
1.0
0.7
0.5
–55°C
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I C , COLLECTOR CURRENT (mA)
Figure 15. DC Current Gain
O11–5/6
LESHAN RADIO COMPANY, LTD.
MMBT3904LT1
1.0
0.8
0.6
0.4
0.2
0
T
J = 25°C
I C = 1.0 mA
10 mA
30 mA
100 mA
0.01
0.02
0.03
0.05 0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
I B , BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
1.0
0.8
0.6
0.4
0.2
0
T J = 25°C
V BE(sat) @ I C /I B =10
0.5
0
+25°C TO +125°C
–55°C TO +25°C
θ
VC FOR V CE(sat)
V
BE @ V CE =1.0 V
–0.5
–1.0
–1.5
–2.0
+25°C TO +125°C
–55°C TO +25°C
V
CE(sat) @ I C /I B =10
θ
VB FOR V BE(sat)
1.0
2.0 3.0
5.0
10
20
50
100
200
0
20
40
60
80
100 120
140 160
180
200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 18. Temperature Coefficients
Figure 17. “ON” Voltages
O11–6/6
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