MMBD354LT1 [LRC]
Dual Hot Carrier Mixer Diodes; 双热载流子二极管混频器
| 型号： | MMBD354LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Dual Hot Carrier Mixer Diodes |
| 文件： | 总2页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are
suitable also for use in detector and ultra–fast switching circuits.
• Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
• Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA
MMBD352LT1
MMBD353LT1
MMBD354LT1
MMBD355LT1
3
1
MAXIMUM RATINGS (EACH DIODE)
2
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
THERMALCHARACTERISTICS
Characteristic
V R
7.0
V CC
2
1
CATHODE
ANODE
Symbol
Max
Unit
3
Total Device Dissipation FR– 5 Board (1)
P D
225
mW
CATHODE/ANODE
T A = 25°C
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
MMBD352LT1
CASE 318–08, STYLE 11
SOT– 23 (TO–236AB)
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate (2) T A = 25°C
Derate above 25°C
1
2
2.4
417
mW/°C
°C/W
°C
CATHODE
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RθJA
ANODE
T J ,T stg
–55 to +150
3
CATHODE/ANODE
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1
MMBD353LT1
CASE 318–08, STYLE 19
SOT– 23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (EACH DIODE)
Characteristic
OFF CHARACTERISTICS
Forward Voltage
Symbol
Min
Max
Unit
ANODE
V F
IR
—
0.60
V
1
(I F = 10 mAdc)
3
2
Reverse Voltage Leakage Current
(V R = 3.0 V)
µA
CATHODE
ANODE
—
—
0.25
10
(V R = 7.0 V)
MMBD354LT1
CASE 318–08, STYLE 9
SOT– 23 (TO–236AB)
Capacitance
C
—
1.0
pF
(V R = 0 V, f = 1.0 MHz)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
CATHODE
ANODE
1
3
2
CATHODE
MMBD355LT1
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
MMBD352. 353. 354. 355LT –1/2
LESHAN RADIO COMPANY, LTD.
MMBD352LT1 MMBD353LT1
MMBD354LT1 MMBD355LT1
TYPICAL CHARACTERISTICS
100
10
1.0
0.9
0.8
0.7
0.6
TA = 85°C
T
A=–40°C
1.0
0.1
T
A = 25°C
0.3
0.4
0.5
0.6
0.7
0.8
0
1.0
2.0
3.0
4.0
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 1. Forward Voltage
Figure 2. Capacitance
MMBD352. 353. 354. 355LT–2/2
相关型号：
MMBD354LT1G
SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ROCHESTER
MMBD355LT1G
SILICON, UHF BAND, MIXER DIODE, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ROCHESTER
©2020 ICPDF网 联系我们和版权申明