S-L2SA1365ELT3G [LRC]

General Purpose Transistor;


型号：	S-L2SA1365ELT3G
厂家：	LESHAN RADIO COMPANY
描述：	General Purpose Transistor
文件：	总3页 (文件大小：1087K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LESHAN RADIO COMPANY, LTD.

General Purpose Transistor

DESCRIPTION

L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor,

L2SA1365*LT1G

S-L2SA1365*LT1G

designed with high collector current and small VCE(sat).

F^.EATURE

●Small collector to emitter saturation voltage.

VCE(sat)=-0.2V typ

●Excellent linearity of DC forward current gain.

●Super mini package for easy mounting

●High collector current I_CM=-1A

●High gain band width product f_T=180MHz typ

●We declare that the material of product compliance with RoHS requirements.

●We declare that the material of product is ROHS compliant

●S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.

SOT–23

APPLICATION

COLLECTOR

Small type motor drive, relay drive, power supply.

BASE

EMITTER

MAXIMUM RATINGS（Ta=25℃）

ORDERING INFORMATION

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

-25

Unit

Device

Marking

Shipping

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

L2SA1365ELT1G

3000/Tape & Reel

10000/Tape & Reel

3000/Tape & Reel

10000/Tape & Reel

3000/Tape & Reel

10000/Tape & Reel

S-L2SA1365ELT1G

-20

L2SA1365ELT3G

S-L2SA1365ELT3G

-4

L2SA1365FLT1G

S-L2SA1365FLT1G

- 00

℃

L2SA1365FLT3G

S-L2SA1365FLT3G

P_c

Collector dissipation

Junction temperature

Storage temperature

150

L2SA1365GLT1G

T_j

＋125

S-L2SA1365GLT1G

L2SA1365GLT3G

T_stg

-55～＋125

S-L2SA1365GLT3G

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to B break down voltage

V(BR)^CBOI _C=-10μA , I_E=0

-25

E to B break down voltage

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

V(BR)^EBO

V(BR)^CEO

ICBO

I _E=-10μA , I _C=0

I _C=-100μA ,R _BE=∞

V _CB=-25V, I _E=0mA

V _EB=-2V, I _C=0mA

V _CE=-4V, I _C=-100mA

-4

-20

-1

800

μA

IEBO

hFE

※

150

C to E Saturation Vlotage

Gain bandwidth product

VCE(sat) I _C=-500mA ,I_B=-25mA

fT V _CE=-6V, I _E=10mA

-0.2

180

-0.5

MHz

※） It shows hFE classification in below table.

Item

Ｅ

Ｆ

Ｇ

150～300

250～500

400～800

ｈＦＥ Item

Rev.O 1/3

LESHAN RADIO COMPANY, LTD.

L2SA1365*LT1G

S-L2SA1365*LT1G

Rev.O 2/3

LESHAN RADIO COMPANY, LTD.

L2SA1365*LT1G

S-L2SA1365*LT1G

SOT-23

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MAX

MILLIMETERS

DIM

MIN

2.80

1.20

0.89

0.37

1.78

0.013

0.085

0.35

0.89

2.10

0.45

MAX

3.04

1.40

1.11

0.50

2.04

0.100

0.177

0.69

1.02

2.64

0.60

0.1102

0.0472

0.0350

0.0150

0.0701

0.0005

0.0034

0.0140

0.0350

0.0830

0.0177

0.1197

0.0551

0.0440

0.0200

0.0807

0.0040

0.0070

0.0285

0.0401

0.1039

0.0236

PIN 1. BASE

2. EMITTER

3. COLLECTOR

0.037

0.95

0.037

0.95

0.079

2.0

0.035

0.9

0.031

0.8

inches

Rev.O 3/3

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