S-LBC847CTT1G [LRC]
General Purpose Transistors NPN Silicon;
| 型号： | S-LBC847CTT1G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总5页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
LBC847ATT1G
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which is designed
for low power surface mount applications.
Features
S-LBC847ATT1G
Series
• Pb−Free Packages are Available
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS (T = 25°C)
A
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Max
45
Unit
V
V
CEO
V
CBO
V
EBO
SC-89
50
V
6.0
100
V
3
Collector Current − Continuous
I
C
mAdc
COLLECTOR
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
2
EMITTER
Total Device Dissipation,
FR−4 Board (Note 1)
P
D
200
mW
T = 25°C
A
Derated above 25°C
1.6
mW/°C
°C/W
Thermal Resistance,
R
600
q
JA
Junction−to−Ambient (Note 1)
Total Device Dissipation,
FR−4 Board (Note 2)
P
D
300
mW
T = 25°C
A
Derated above 25°C
2.4
mW/°C
°C/W
Thermal Resistance,
R
400
q
JA
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
T , T
−55 to
+150
°C
J
stg
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
ORDERING INFORMATION
†
Device
Marking
Package
Shipping
LBC847ATT1G
1E
1F
1G
SC−89
SC−89
SC−89
3,000 / Tape & Reel
3,000 / Tape & Reel
3,000 / Tape & Reel
S-LBC847ATT1G
LBC847BTT1G
S-LBC847BTT1G
LBC847CTT1G
S-LBC847CTT1G
Rev.O 1/5
LESHAN RADIO COMPANY, LTD.
LBC847ATT1G
Series
Series
S-LBC847ATT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
V
V
V
V
(BR)CEO
(I = 10 mA)
C
LBC847 Series
LBC847 Series
LBC847 Series
LBC847 Series
45
50
50
6.0
−
−
−
−
−
−
−
−
Collector−Emitter Breakdown Voltage
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 mA, V = 0)
C
EB
Collector−Base Breakdown Voltage
(I = 10 mA)
C
V
V
Emitter−Base Breakdown Voltage
(I = 1.0 mA)
E
Collector Cutoff Current (V = 30 V)
I
−
−
−
−
15
5.0
nA
mA
CB
CBO
(V = 30 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mA, V = 5.0 V)
LBC847A
LBC847B
LBC847C
−
−
−
90
150
270
−
−
−
C
CE
(I = 2.0 mA, V = 5.0 V)
LBC847A
LBC847B
LBC847C
110
200
420
180
290
520
220
450
800
C
CE
Collector−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
−
−
0.25
0.6
V
V
C
B
CE(sat)
BE(sat)
Collector−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
−
−
0.7
0.9
−
−
C
B
Base−Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Voltage (I = 2.0 mA, V = 5.0 V)
V
BE(on)
580
−
660
−
700
770
mV
C
CE
Base−Emitter Voltage (I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
−
−
MHz
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance (V = 10 V, f = 1.0 MHz)
C
obo
4.5
10
pF
dB
CB
Noise Figure
NF
(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
−
C
CE
S
Rev.O 2/5
LESHAN RADIO COMPANY, LTD.
LBC847ATT1G
Series
Series
S-LBC847ATT1G
LBC847ATT1G,LBC847BTT1G,LBC847CTT1G
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V = 10 V
CE
BE(on)
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
−55°C to +125°C
A
I
= 200 mA
C
I
=
I
=
I
C
= 50 mA
I = 100 mA
C
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
Rev.O 3/5
LESHAN RADIO COMPANY, LTD.
LBC847ATT1G
Series
Series
S-LBC847ATT1G
LBC847ATT1G,LBC847BTT1G,LBC847CTT1G
1.0
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
Figure 5. Normalized Thermal Response
400
300
10
7.0
5.0
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Current−Gain − Bandwidth Product
Figure 6. Capacitances
Rev.O 4/5
LESHAN RADIO COMPANY, LTD.
LBC847ATT1G
Series
Series
S-LBC847ATT1G
SC-89
A
-X-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
3
S
B
-Y-
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
K
MILLIMETERS
NOM
INCHES
NOM
G
2 PL
DIM MIN
MAX
1.70
0.95
0.80
0.33
MIN
0.059
0.030
0.024
0.009
MAX
0.067
0.040
0.031
0.013
A
B
C
D
G
H
J
1.50
1.60
0.85
0.063
0.034
3 PL
D
0.75
0.60
0.23
M
0.70
0.28
0.028
0.011
0.08 (0.003)
X Y
0.50 BSC
0.53 REF
0.15
0.020 BSC
0.021 REF
0.006
0.10
0.30
0.20
0.50
0.004
0.012
0.008
0.020
K
L
0.40
0.016
1.10 REF
−−−
−−−
0.043 REF
−−−
−−−
M
N
S
−−−
−−−
10
10
−−−
−−−
10
10
_
_
N
M
_
_
J
1.50
1.60
1.70
0.059
0.063
0.067
C
SEATING
PLANE
-T-
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 5/5
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