S-LBC857BTT1G [LRC]

General Purpose Transistors PNP Silicon;
S-LBC857BTT1G
型号: S-LBC857BTT1G
厂家: LESHAN RADIO COMPANY    LESHAN RADIO COMPANY
描述:

General Purpose Transistors PNP Silicon

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LESHAN RADIO COMPANY, LTD.  
General Purpose Transistors  
LBC857ATT1G  
Series  
S-LBC857ATT1G  
Series  
PNP Silicon  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SC−89 package which is designed  
for low power surface mount applications.  
Features  
Pb−Free Packages are Available  
S- Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC-Q101 Qualified and  
PPAP Capable.  
MAXIMUM RATINGS (T = 25°C)  
A
SC-89  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
−45  
Unit  
V
V
CEO  
V
CBO  
V
EBO  
3
−50  
V
COLLECTOR  
−5.0  
−100  
V
1
Collector Current − Continuous  
I
C
mAdc  
BASE  
2
EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR−4 Board (Note 1)  
P
D
200  
mW  
T = 25°C  
A
Derated above 25°C  
1.6  
mW/°C  
°C/W  
Thermal Resistance,  
R
600  
q
JA  
Junction−to−Ambient (Note 1)  
Total Device Dissipation,  
FR−4 Board (Note 2)  
P
D
300  
mW  
T = 25°C  
A
Derated above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
R
400  
q
JA  
Junction−to−Ambient (Note 2)  
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
1. FR−4 @ min pad.  
2. FR−4 @ 1.0 × 1.0 in pad.  
ORDERING INFORMATION  
Device  
Marking  
3E  
Package  
Shipping  
LBC857ATT1G,S-LBC857ATT1G  
LBC857BTT1G,S-LBC857BTT1G  
LBC857CTT1G,S-LBC857CTT1G  
SC−89  
SC−89  
SC−89  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
3F  
3G  
Rev.O 1/5  
 
LESHAN RADIO COMPANY, LTD.  
LBC857ATT1G Series , S-LBC857ATT1G Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
V
V
V
V
(BR)CEO  
(I = −10 mA)  
C
LBC857 Series  
LBC857B Only  
LBC857 Series  
LBC857 Series  
−45  
−50  
−50  
−5.0  
CollectorEmitter Breakdown Voltage  
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = −10 mA, V = 0)  
C
EB  
CollectorBase Breakdown Voltage  
(I = −10 mA)  
C
V
V
EmitterBase Breakdown Voltage  
(I = −1.0 mA)  
E
Collector Cutoff Current (V = −30 V)  
I
−15  
−4.0  
nA  
mA  
CB  
CBO  
Collector Cutoff Current (V = −30 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
(I = −10 mA, V = −5.0 V)  
C
h
FE  
LBC857A  
LBC857B  
LBC857C  
90  
150  
270  
CE  
LBC857A  
LBC857B  
LBC857C  
125  
180  
250  
(I = −2.0 mA, V = −5.0 V)  
220  
290  
475  
C
CE  
420  
520  
800  
CollectorEmitter Saturation Voltage  
(I = −10 mA, I = −0.5 mA)  
V
V
V
V
CE(sat)  
BE(sat)  
−0.3  
−0.65  
C
B
(I = −100 mA, I = −5.0 mA)  
C
B
BaseEmitter Saturation Voltage  
(I = −10 mA, I = −0.5 mA)  
V
−0.7  
−0.9  
C
B
(I = −100 mA, I = −5.0 mA)  
C
B
BaseEmitter On Voltage  
(I = −2.0 mA, V = −5.0 V)  
V
BE(on)  
−0.6  
−0.75  
−0.82  
C
CE  
(I = −10 mA, V = −5.0 V)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product  
f
100  
MHz  
pF  
T
(I = −10 mA, V = −5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance  
(V = −10 V, f = 1.0 MHz)  
CB  
C
4.5  
10  
ob  
Noise Figure  
NF  
dB  
(I = −0.2 mA, V = −5.0 Vdc, R = 2.0 kW,  
C
CE  
S
f = 1.0 kHz, BW = 200 Hz)  
Rev.O 2/5  
LESHAN RADIO COMPANY, LTD.  
LBC857ATT1G Series , S-LBC857ATT1G Series  
LBC857ATT1G,LBC857BTT1G,LBC857CTT1G  
2.0  
1.5  
−1.0  
T = 25°C  
−0.9  
−0.8  
−0.7  
−0.6  
−0.5  
−0.4  
−0.3  
−0.2  
−0.1  
0
A
V
= −10 V  
CE  
T = 25°C  
V
@ I /I = 10  
C B  
BE(sat)  
A
1.0  
0.7  
0.5  
V
BE(on)  
@ V = −10 V  
CE  
0.3  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
−0.2  
−0.5 −1.0 −2.0  
−5.0 −10 −20  
−50 −100 −200  
−0.1  
−1.0  
−10  
−100  
−0.2  
−0.5  
−2.0  
−5.0  
−20  
−50  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
−2.0  
−1.6  
−1.2  
−0.8  
−0.4  
0
−55°C to +125°C  
T = 25°C  
A
I
=
I = −50 mA  
C
I
C
= −200 mA  
= −100 mA  
C
−10 mA  
I
C
I
= −20 mA  
C
−10 −20  
−0.2  
−1.0  
−10  
−100  
−0.02  
−0.1  
I , BASE CURRENT (mA)  
−1.0  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 3. Collector Saturation Region  
Figure 4. Base−Emitter Temperature Coefficient  
Rev.O 3/5  
LESHAN RADIO COMPANY, LTD.  
LBC857ATT1G Series , S-LBC857ATT1G Series  
LBC847ATT1G,LBC847BTT1G,LBC847CTT1G  
10  
7.0  
5.0  
400  
C
ib  
300  
T = 25°C  
A
200  
150  
V
= −10 V  
CE  
T = 25°C  
A
100  
80  
C
ob  
3.0  
2.0  
60  
40  
30  
1.0  
−0.4  
20  
−0.5  
−0.6 −1.0  
−2.0  
−4.0 −6.0  
−10  
−20 −30 −40  
−1.0  
−2.0 −3.0 −5.0  
−10  
−20 −30 −50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current−Gain − Bandwidth Product  
1.0  
D = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
0.01  
0.01  
SINGLE PULSE  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
t, TIME (s)  
1.0  
10  
100  
1000  
Figure 7. Thermal Response  
The safe operating area curves indicate I −V limits  
C
CE  
−200  
−100  
−50  
of the transistor that must be observed for reliable opera-  
tion. Collector load lines for specific circuits must fall be-  
low the limits indicated by the applicable curve.  
1 s  
3 ms  
T = 25°C  
T = 25°C  
A
J
The data of Figure 8 is based upon T  
= 150°C; T or  
J(pk)  
C
T is variable depending upon conditions. Pulse curves are  
A
valid for duty cycles to 10% provided T  
150°C. T  
J(pk)  
J(pk)  
BC558  
BC557  
BC556  
may be calculated from the data in Figure 7. At high case  
or ambient temperatures, thermal limitations will reduce  
the power that can be handled to values less than the limita-  
tions imposed by the secondary breakdown.  
−10  
−5.0  
BONDING WIRE LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
−2.0  
−1.0  
−5.0  
−10  
−30 −45 −65 −100  
V
, COLLECTOR−EMITTER VOLTAGE (V)  
CE  
Figure 8. Active Region Safe Operating Area  
Rev.O 4/5  
LESHAN RADIO COMPANY, LTD.  
LBC857ATT1G Series , S-LBC857ATT1G Series  
SC-89  
A
-X-  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
3
S
B
-Y-  
1
2
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.  
K
MILLIMETERS  
NOM  
INCHES  
NOM  
G
2 PL  
DIM MIN  
MAX  
1.70  
0.95  
0.80  
0.33  
MIN  
0.059  
0.030  
0.024  
0.009  
MAX  
0.067  
0.040  
0.031  
0.013  
A
B
C
D
G
H
J
1.50  
1.60  
0.85  
0.063  
0.034  
3 PL  
D
0.75  
0.60  
0.23  
M
0.70  
0.28  
0.028  
0.011  
0.08 (0.003)  
X Y  
0.50 BSC  
0.53 REF  
0.15  
0.020 BSC  
0.021 REF  
0.006  
0.10  
0.30  
0.20  
0.50  
0.004  
0.012  
0.008  
0.020  
K
L
0.40  
0.016  
1.10 REF  
−−−  
−−−  
0.043 REF  
−−−  
−−−  
M
N
S
−−−  
−−−  
10  
10  
−−−  
−−−  
10  
10  
_
_
N
M
_
_
J
1.50  
1.60  
1.70  
0.059  
0.063  
0.067  
C
SEATING  
PLANE  
-T-  
H
H
L
G
RECOMMENDED PATTERN  
OF SOLDER PADS  
Rev.O 5/5  

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