CMPSH-3C [LGE]
Schottky Barrier Diode; 肖特基二极管型号: | CMPSH-3C |
厂家: | LGE |
描述: | Schottky Barrier Diode |
文件: | 总2页 (文件大小:224K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CMPSH-3/A/C/S
Schottky Barrier Diode
SOT-23
Features
Extremely Fast switching speed.
Low forward voltage.
Power dissipation Pd=350mW
Pb/RoHS Free
Applications
Dimensions in inches and (millimeters)
Fast switching application.
CMPSH-3
CMPSH-3A
CMPSH-3C
CMPSH-3S
Ordering Information
Type No.
Marking
Package Code
CMPSH-3
D95
DB1
DB2
DA5
SOT-23
SOT-23
SOT-23
SOT-23
CMPSH-3A
CMPSH-3C
CMPSH-3S
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
Symbol
VRRM
IF
Limits
30
Unit
V
Peak Repetitive Peak reverse voltage
Forward Continuous Current
Peak Repetitive Forward Current
Forward Surge Current
100
mA
IFRM
350
mA
mA
mW
℃/W
℃
tp=10ms
IFSM
750
Power Dissipation
Pd
350
Thermal Resistance
RθJA
TJ,TSTG
357
Junction Storage temperature
-55-150
http://www.luguang.cn
mail:lge@luguang.cn
CMPSH-3/A/C/S
Schottky Barrier Diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Min. Typ. Max.
Unit Conditions
Reverse Breakdown Voltage
V(BR)
VF1
30
V
IR=100μA
0.29 0.33
0.40 0.45
0.74 1.00
V
IF=2.0mA
Forward voltage
VF2
V
IF=15mA
VF3
V
IF=100mA
90
25
7.0
500
100
nA
μA
pF
VR=25V
Reverse current
IR
VR=25V TA=100℃
VR=1V,f=1MHz
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
Diode Capacitanc
Reverse Recovery Time
CD
trr
5
ns
http://www.luguang.cn
mail:lge@luguang.cn
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