1N5711 [LUNSURE]
400 mWatt Small Signal Schottky Diode 60 to 70 Volts; 400 mWatt小信号肖特基二极管60 〜70伏特
| 型号： | 1N5711 |
| 厂家： | 
Lunsure Electronic |
| 描述： | 400 mWatt Small Signal Schottky Diode 60 to 70 Volts |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
1N6263
1N5711
Features
·
·
·
High Reverse Breakdown Voltage
400 mWatt Small
Signal Schottky Diode
60 to 70 Volts
Low Forward Voltage Drop
For General Purpose Application
Maximum Ratings
·
·
·
Operating Temperature: -55°C to +150°C
DO-35
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 300°C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Peak Reverse
Voltage
D
VRRM
1N6263
1N5711
60V
70V
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Power Dissipation
Junction Temperature
PTOT
TJ
400mW Infinite Heat sink
125°C
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Maximum
Instantaneous
Forward Voltage
0.41V
1.0V
IFM = 1.0mA;
IFM = 15mA
VF
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
DIMENSIONS
VR=50Volts
T = 25°C
J
IR
200nA
INCHES
MIN
---
---
---
MM
MIN
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
NOTE
---
---
Measured at
1.0MHz, VR=0V
---
CJ
2pF
1.000
25.40
---
IF=5mA
VR = 6V
R =100W
L
Reverse Recovery
Time
T
rr
1.0nS
Note: Valid provided that leads at a distance of 4mm from case are
kept ambient temperature.
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1N6263
1N5711
Fig.1 Typical variation of fwd. current vs forward. voltage for
primary conduction through the Schottky barrier
Fig.2 Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
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mA
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Fig.3 Typical variation of reverse current at
various temperatures
Fig.4 Typical capacitance curve as a function of
reverse voltage
PF
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