2SC945GR [LUNSURE]
Transistor;
| 型号： | 2SC945GR |
| 厂家： | 
Lunsure Electronic |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
2SC945
Features
·
·
·
·
Capable of 0.4Watts of Power Dissipation.
NPN Silicon
Plastic-Encapsulate
Transistor
Collector-current 0.15A
Collector-base Voltage 60V
Operating and storage junction temperature range: -55OC to +150OC
Pin Configuration
Bottom View
TO-92
B
C
E
A
E
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
B
OFF CHARACTERISTICS
V (BR)CEO
V (BR)CBO
V (BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
(I C=0.1mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=1000uAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0)
50
60
Vdc
Vdc
5.0
Vdc
C
Collector Cutoff Current
0.1
0.1
0.1
uAdc
uAdc
uAdc
(V CB=60Vdc, I =0Adc)
E
I
Collector Cutoff Current
(V CE=55Vdc,R=10M OHM)
Emitter Cutoff Current
CER
IEBO
(V EB=5.0Vdc, I =0Adc)
C
ON CHARACTERISTICS
D
h FE(1)
h FE(2)
V CE(sat)
V BE(sat)
VBE
DC Current Gain
(I =1.0mAdc, VCE=6.0Vdc)
DC Current Gain
70
40
700
C
(I C=0.1mAdc, VCE=6.0Vdc)
Collector-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
Base-Emitter Saturation Voltage
(I C=100mAdc, IB=10mAdc)
0.3
1.0
1.4
Vdc
Vdc
Vdc
G
Base-Emitter Voltage
(I E=310mAdc)
DIMENSIONS
INCHES
MIN
.170
.170
.550
.010
.130
.010
MM
MIN
SMALL-SIGNAL CHARACTERISTICS
DIM
A
B
C
D
MAX
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
f T
Transistor Frequency
.190
.190
.590
.020
.160
.104
4.33
4.30
13.97
0.36
3.30
2.44
(I =10mAdc, VCE=6.0Vdc, f=30MHz)
C
150
MHz
CLASSIFICATION OF HFE (1)
E
G
Rank
O
Y
GR
200-400
BL
350-700
Range
70-140
120-240
www.cnelectr.com
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