BAS20 [LUNSURE]

Small Signal Diodes 250mW; 小信号二极管250mW的


型号：	BAS20
厂家：	Lunsure Electronic
描述：	Small Signal Diodes 250mW 小信号二极管250mW的信号二极管光电二极管
文件：	总2页 (文件大小：68K)
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BAS19

THRU

BAS21

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

Features

l Ideally Suited for Automatic Insertion

l 150^oC Junction Temperature

l Fast Switching speed

Small

Signal Diodes

250mW

l Epitaxial Planar Die Construction

Mechanical Data

l Case: SOT-23, Molded Plastic

l Weight: 0.008 grams ( approx.)

SOT-23

l Marking Code

Repetitive

Peak

Reverse

Voltage

V_RRM(V)

Continuous

Reverse

Voltage

V_R(V)

Part

Number

Marking

BAS19

BAS20

BAS21

100

150

200

120

200

250

DIMENSIONS

Maximum Ratings @ 25^oC Unless Otherwise Specified

Parameter Symbol Value Unit

Non-repetitive

Peak Reverse Voltage

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

@ t=1us

@ t=1s

2.5

0.5

I_FSM

(1)

I_F(AV)

I_F

Average Rectified Forward Current

Forward DC Current at T_amb=25^oC

Repetitive Peak Forward Current

Power Dissipation up to T_amb=25^oC

Thermal Resistance Junction to

Ambient

200

.085

.37

(2)

200

625

250

Suggested Solder

Pad Layout

I_FRM

.031

.800

tot

^oC/W

^oC

.035

.900

430

.079

2.000

inches

T, T_STG

Operating & Storage Temperature

-65~150

Notes: (1) Measured under pulse conditions;

Pulse time = t_p<= 0.3ms

.037

.950

.037

.950

(2) Device on fiberglass substrate,

See layout on next page

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BAS19 thru BAS21

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

I_F= 100mA

I_F= 200mA

—

1.0

1.25

Forward Voltage

V_F

V_R= V_Rmax

V_R= V_Rmax; T_j= 150°C

—

100

µA

Leakage Current

I_R

r_f

Dynamic Forward Resistance

Capacitance

I_F= 10mA

—

Ω

V_R= 0

C_tot

—

f = 1MHz

I_F= 30mA, I_{R =}30mA

I_rr= 3mA, R_L= 100Ω

Reverse Recovery Time (see figures)

t_rr

—

(1)Device on fiberglass substrate, see layout (SOT-23).

Test Circuit and Waveforms(BAS19, BAS20, BAS21)

Ω

Input signal

Test circuit

Waveforms; IR = 3 mA

Input Signal - total pulse duration

- duty factor

tp(tot) = 2µs

δ = 0.0025

t_r= 0.6ns

t_p= 100ns

- rise time of reverse pulse

- reverse pulse duration

Oscilloscope - rise time

- cicuit capitance*

t_r= 0.35ns

C < 1pF

Output signal

*C = oscilloscope input capactitance + parasitic capacitance

Layout for R_ΘJAtest

0.30 (7.5)

0.12 (3)

Thickness: Fiberglass 0.059 in. (1.5 mm)

Copper leads 0.012 in. (0.3 mm)

.04 (1)

.08 (2)

.04 (1)

.08 (2)

0.59 (15)

0.03 (0.8)

0.47 (12)

0.2 (5)

Dimensions in inches (millimeters)

0.06 (1.5)

0.20 (5.1)

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