BZX55C4V3 [LUNSURE]

0.5W SILICON PLANAR ZENER DIODES; 0.5W硅平面齐纳二极管


型号：	BZX55C4V3
厂家：	Lunsure Electronic
描述：	0.5W SILICON PLANAR ZENER DIODES 0.5W硅平面齐纳二极管二极管齐纳二极管测试局域网
文件：	总4页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BZX55-C0V8 THRU BZX55-C200

CHENYI ELECTRONICS

0.5W SILICON PLANAR ZENER DIODES

FEATURES

. The zener voltage are graded according to the international E24

standard .Other voltage tolerance and higher zener voltage

on request.

MECHANICAL DATA

. Case: DO-35 glass case

. Polarity: Color band denotes cathode end

. Weight: Approx. 0.13gram

ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(TA=25

)

Symbols

Units

Value

Zener current see table "Characteristics"

Power dissipation at TA=50

Junction temperature

Ptot

5001)

175

Storage temperature range

TSTG

-65 to + 175

1)Valid provided that at a distance of 8mm from case are kept at ambient temperature

ELECTRICAL CHARACTERISTICS(TA=25

)

Symbols

Min.

Typ.

Max.

3001)

Units

K/W

Thermal resistance junction to ambient

Forward voltage at IF=100mA

1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature

Page 1 of 4

BZX55-C0V8 THRU BZX55-C200

CHENYI ELECTRONICS

0.5W SILICON PLANAR ZENER DIODES

BXZ55... SILICON PLANAR ZENER DIODES

Temp coefficient

of zener voltage

TKVZ

Zener Voltage Range1)

Dynamic resistance

rzjt and rzjk at Izk

Reverse leakage current

IR and IR 2) at VR

Type

VZNOM

IZT for VZT 2)

%/K

0.73…0.83

1.9…2.1

BZX 55/C 0V8 3)

BZX 55/C 2V0

BZX 55/C 2V4

BZX 55/C 2V7

BZX 55/C 3V0

BZX 55/C 3V3

BZX 55/C 3V6

BZX 55/C 3V9

BZX 55/C 4V3

BZX 55/C 4V7

BZX 55/C 5V1

BZX 55/C 5V6

BZX 55/C 6V2

BZX 55/C 6V8

BZX 55/C 7V5

BZX 55/C 8V2

BZX 55/C 9V1

BZX 55/C 10

BZX 55/C 11

BZX 55/C 12

BZX 55/C 13

BZX 55/C 15

BZX 55/C 16

BZX 55/C 18

BZX 55/C 20

0.8

2.0

2.4

2.7

<50

-0.26...-0.23

<100

<50

<10

<200

<100

<50

-0.09…-0.06

-0.08…-0.05

2.28…2.56

2.5…2.9

<85

2.8…3.2

<600

3.1…3.5

3.3

3.6

3.9

4.3

4.7

5.1

5.6

6.2

6.8

7.5

8.2

9.1

<40

3.4…3.8

3.7…4.1

4.0…4.6

<20

<10

<75

<60

<35

<25

<10

-0.06…-0.03

-0.05…+0.02

-0.02…+0.02

-0.05…+0.05

0.03…0.06

0.03…0.07

0.03…0.08

0.03…0.09

0.03…0.1

4.4…5.0

<0.5

4.8…5.4

<550

<450

<200

<150

5.2…6.0

5.8…6.6

2.0

3.0

5.0

6.2

6.8

7.5

8.2

9.1

10.0

11.0

6.4…7.2

7.0…7.9

<50

7.7…8.7

8.5…9.6

<10

<15

<20

<26

<30

<40

<50

<55

<0.1

9.4…10.6

10.4…11.6

11.4…12.7

12.4…14.1

13.8…15.6

15.3…17.1

16.8…19.1

18.8…21.2

<70

<90

<110

<170

<220

0.03…0.11

Page 2 of 4

BZX55-C0V8 THRU BZX55-C200

CHENYI ELECTRONICS

0.5W SILICON PLANAR ZENER DIODES

BXZ55... SILICON PLANAR ZENER DIODES

20.8…23.3

22.8…25.6

25.1…28.9

BZX 55/C 22

BZX 55/C 24

BZX 55/C 27

<55

<80

<220

BZX 55/C 30

BZX 55/C 33

BZX 55/C 36

BZX 55/C 39

BZX 55/C 43

BZX 55/C 47

BZX 55/C 51

BZX 55/C 56

BZX 55/C 62

BZX 55/C 68

BZX 55/C 75

BZX 55/C 82

BZX 55/C 91

BZX 55/C 100

BZX 55/C 110

BZX 55/C 120

28…32

<80

31…35

34…38

37…41

40…46

<500

<600

<700

0.04…0.12

44…50

48….54

52…60

0.5

2.5

58…66

<0.1

<1000

64…72

70…79

77…87

<1500

<2000

<5000

<5500

<6000

<6500

<7000

<8500

<10000

0.25

85…96

94…106

104…116

114…127

124…141

138…156

153…171

168…191

188…212

<10

100

110

120

0.05…0.12

0.1

100

110

120

130

150

BZX 55/C 130

BZX 55/C 150

BZX 55/C 160

BZX 55/C 180

BZX 55/C 200

130

150

160

180

200

1)Tested with pulses tp=20ms

2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case

3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode

lead to the negative pole.

Page 3 of 4

BZX55-C0V8 THRU BZX55-C200

CHENYI ELECTRONICS

0.5W SILICON PLANAR ZENER DIODES

BXZ55... SILICON PLANAR ZENER DIODES

BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)

Page 4 of 4

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