SD101AWS [LUNSURE]

Small signal schottky diodes; 小信号肖特基二极管


型号：	SD101AWS
厂家：	Lunsure Electronic
描述：	Small signal schottky diodes 小信号肖特基二极管小信号肖特基二极管光电二极管
文件：	总2页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SD101AWS

THRU

SD101CWS

Shanghai Lunsure Electronic

Technology Co.,Ltd

Tel:0086-21-37185008

Fax:0086-21-57152769

Features

Low Reverse Recovery Time

Small Signal

Low Reverse Capacitance

Low Forward Voltage Drop

Schottky Diodes

l Guard Ring Construction for Transient Protection

Mechanical Data

l Case: SOD-323 plastic case

SOD323

l Terminals: Solderable per MIL-STD-202, Method 208

l Polarity: Indicated by Cathode Band

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Symbol

V^RRM

SD101AWS SD101BWS SD101CWS

VRWM

V_R

60V

42V

50V

40V

28V

V_R(RMS)

RMS Reverse Voltage

35V

Maximum sigle cycle surge 10us

square wave

IFSM

2.0A

DIMENSIONS

Power Dissipation(Note 1)

400mW

DIM

INCHES

NOTE

Thermal Resistance, Junction to

Ambient

MIN

MAX

.107

.071

.053

.045

.016

.018

.010

.006

MIN

2.30

1.60

1.15

0.80

0.25

0.10

-----

MAX

2.70

1.80

1.35

1.15

0.40

0.45

0.25

0.15

650°C/W

125^oC

-55 to +150^oC

.090

.063

.045

.031

.010

.004

-----

Junction Tmperature

T^j

Operation/Storage Temp. Range

TSTG

Electrical Characteristics @ 25^oC Unless Otherwise Specified

Charateristic

Leakage Current

Symbol

Max

Test Condition

VR=50V

VR=40V

SD101AWS

SD101BWS

SD101CWS

200nA

I^R

200nA V^R=30V

SUGGESTED SOLDER

PAD LAYOUT

Maximum Forward SD101AWS

Voltage Drop SD101BWS

SD101CWS

0.41V

0.4V

.39V

0.074"

I_F=1mA

I_F=15mA

V^F

SD101AWS

SD101BWS

SD101CWS

0.95V

0.9V

0.027”

Junction Cap. SD101AWS

SD101BWS

2.0pF

2.1pF

2.2pF

C^j

t_rr

V^R=0V, f=1.0MHz

SD101CWS

0.022”

I^F=IR=5mA, recover

to 0.1IR

Reverse Recovery Time

1ns

Note: 1. Valid provided that electrodes are kept at ambient temperature

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SD101AWS thru SD101CWS

Figure 2. Typical forward conduction curve of combination

Schottky barrier and PN junction guard ring

Figure 1. Typical variation of forward. current vs.fwd.

Voltage for primary conduction through the

schottky barrier

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Figure 4. Typical capacitance curve as a function

of reverse voltage

Figure 3.Typical variation of reverse current

at versus temperature

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