SD101A [LUNSURE]

small single schottky diodes; 小单肖特基二极管
SD101A
型号: SD101A
厂家: Lunsure Electronic    Lunsure Electronic
描述:

small single schottky diodes
小单肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:71K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SD101A  
THRU  
SD101C  
Shanghai Lunsure Electronic  
Technology Co.,Ltd  
Tel:0086-21-37185008  
Fax:0086-21-57152769  
Features  
l
l
l
Low Reverse Recovery Time  
Small Signal  
Low Reverse Capacitance  
Low Forward Voltage Drop  
Schottky Diodes  
l Guard Ring Construction for Transient Protection  
Mechanical Data  
l Case: DO-35, Glass  
DO-35  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
Maximum Ratings @ 25oC Unless Otherwise Specified  
D
Characteristic  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
Symbol SD101A SD101B SD101C  
VRRM  
VRWM  
VR  
60V  
42V  
50V  
40V  
28V  
A
Cathode  
Mark  
VR(RMS)  
RMS Reverse Voltage  
35V  
B
Maximum sigle cycle surge 10us  
square wave  
IFSM  
2.0A  
D
Power Dissipation(Note 1)  
Pd  
400mW  
Thermal Resistance, Junction to  
Ambient  
R
300K/W  
125oC  
C
Junction Tmperature  
Tj  
Operation/Storage Temp. Range  
TSTG  
-55 to +150oC  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
Charateristic  
Leakage Current  
Symbol Max  
Test Condition  
VR=50V  
DIMENSIONS  
SD101A  
SD101B  
SD101C  
200nA  
INCHES  
MIN  
---  
---  
---  
MM  
MIN  
VR=40V  
200nA  
IR  
DIM  
A
B
C
D
MAX  
.166  
.079  
.020  
---  
MAX  
4.2  
NOTE  
200nA VR=30V  
---  
---  
2.00  
.52  
---  
Maximum Forward SD101A  
Voltage Drop SD101B  
SD101C  
0.41V  
0.4V  
---  
1.000  
25.40  
IF=1mA  
IF=15mA  
0.39V  
1V  
VF  
SD101A  
SD101B  
SD101C  
0.95V  
0.9V  
Junction Cap. SD101A  
SD101B  
2.0pF  
2.1pF  
2.2pF  
Cj  
trr  
VR=0V, f=1.0MHz  
SD101C  
IF=IR=50mA, recover to  
200mA/0.1IR  
Reverse Recovery Time  
1ns  
Note: 1. Valid provided that electrodes are kept at ambient temperature  
www.cnelectr.com  
SD101A thru SD101C  
Figure 2. Typical forward conduction curve of combination  
Schottky barrier and PN junction guard ring  
Figure 1. Typical variation of forward. current vs.fwd.  
Voltage for primary conduction through the  
schottky barrier  
mA  
mA  
ꢂꢀꢀ  
ꢂꢀ  
A
B
C
A
B
ꢇꢀ  
C
ꢆꢀ  
ꢅꢀ  
ꢃꢀ  
F
F
I
I
ꢀꢁꢂ  
ꢀꢁꢀꢂ  
ꢀꢁꢄ  
ꢂꢈ  
ꢀꢁꢄ  
ꢂꢈ  
F
F
V
V
Figure 4. Typical capacitance curve as a function  
of reverse voltage  
Figure 3.Typical variation of reverse current  
at versus temperature  
mA  
mA  
ꢂꢀꢀ  
ꢂꢄꢀꢊꢋ  
ꢂꢃꢄꢊꢋ  
ꢂꢀꢀꢊꢋ  
ꢌꢄꢊꢋ  
ꢂꢀ  
C
B
A
ꢄꢀꢊꢋ  
R
I
R
I
ꢀꢁꢂ  
ꢃꢄꢊꢋ  
ꢀꢁꢀꢂ  
ꢅꢀ  
ꢄꢀꢈ  
ꢅꢀ  
ꢄꢀꢈ  
ꢉꢀ  
ꢉꢀ  
ꢂꢀ  
ꢃꢀ  
ꢂꢀ  
ꢃꢀ  
R
R
V
V
www.cnelectr.com  

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