LY61L1288RL-15T [LYONTEK]

128K X 8 BIT HIGH SPEED CMOS SRAM;


型号：	LY61L1288RL-15T
厂家：	Lyontek Inc.
描述：	128K X 8 BIT HIGH SPEED CMOS SRAM 静态存储器
文件：	总12页 (文件大小：280K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

REVISION HISTORY

Revision

Rev. 1.0

Rev. 1.1

Rev. 1.2

Description

Initial Issue

Delete Icc1 Spec.

Added I Grade Spec.

Issue Date

Jul.25.2004

Sep.21.2004

Apr.20.2009

Revised Test Condition of I_CC/I_SB1/I_DR

Revised V_TERMto V_T1and V_T2

FEATURES ORDERING INFORMATION

Lead

Revised

free and green package available to Green package available

ABSOLUTE MAXIMUN RATINGS

Deleted T_SOLDERin

ORDERING INFORMATION

Added packing type in

Adding PKG type : 32 TSOP-II

Rev. 1.3

Jan.5.2010

PACKAGE OUTLINE DIMENSION

Revised

in page 8

Rev. 1.4

Rev. 1.5

May.7.2010

Aug.25.2010

PACKAGE OUTLINE DIMENSION

ORDERING INFORMATION

in page 10

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

FEATURES

GENERAL DESCRIPTION

The LY61L1288 is a 1,048,576-bit high speed

CMOS static random access memory organized as

131,072 words by 8 bits. It is fabricated using very

high performance, high reliability CMOS technology.

Its standby current is stable within the range of

operating temperature.

Fast access time : 8/10/12/15ns

Low power consumption:

Operating current : 80/75/70/65mA (TYP.)

Standby current : 0.6mA (TYP.)

Single 3.3V power supply

All inputs and outputs TTL compatible

Fully static operation

The LY61L1288 is well designed for high speed

system application. Easy expansion is provided by

using an active LOW Chip Enable(CE#). The active

LOW Write Enable(WE#) controls both writing and

reading of the memory.

Tri-state output

Data retention voltage : 2.0V (MIN.)

Green package available

Package : 32-pin 8mm x 13.4mm STSOP

32-pin 400 mil TSOP-II

The LY61L1288 operates from a single power

supply of 3.3V and all inputs and outputs are fully

TTL compatible

PRODUCT FAMILY

Power Dissipation

Speed

Product

Family

LY61L1288

Operating

Temperature

0 ~ 70℃

Vcc Range

Standby(ISB1,TYP.) Operating(Icc,TYP.)

3.15 ~ 3.6V

3.0 ~ 3.6V

3.15 ~ 3.6V

3.0 ~ 3.6V

3.15 ~ 3.6V

3.0 ~ 3.6V

8/10ns

12/15ns

8/10ns

0.6mA

80/75mA

70/65mA

80/75mA

70/65mA

80/75mA

70/65mA

0 ~ 70℃

-20 ~ 80℃

-40 ~ 85℃

LY61L1288(E)

LY61L1288(I)

12/15ns

8/10ns

12/15ns

FUNCTIONAL BLOCK DIAGRAM

PIN DESCRIPTION

SYMBOL

DESCRIPTION

Address Inputs

Vcc

Vss

A0 - A16

DQ0 – DQ7 Data Inputs/Outputs

128Kx8

A0-A16

DECODER

MEMORY ARRAY

CE#

WE#

OE#

V_CC

Chip Enable Input

Write Enable Input

Output Enable Input

Power Supply

V_SS

Ground

I/O DATA

CIRCUIT

DQ0-DQ7

COLUMN I/O

CE#

WE#

OE#

CONTROL

CIRCUIT

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

PIN CONFIGURATION

A16

A15

A14

A13

OE#

DQ7

DQ6

Vss

Vcc

DQ5

DQ4

A12

A11

A10

CE#

DQ0

DQ1

Vcc

Vss

DQ2

DQ3

WE#

LY61L1288

STSOP

A16

A15

A14

A13

OE#

DQ7

DQ6

VSS

VCC

DQ5

DQ4

A12

A11

A10

CE#

DQ0

DQ1

VCC

VSS

DQ2

DQ3

WE#

TSOP-II

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

ABSOLUTE MAXIMUN RATINGS*

PARAMETER

SYMBOL

VT1

RATING

-0.5 to 4.6

UNIT

Voltage on VCC relative to VSS

Voltage on any other pin relative to VSS

VT2

-0.5 to VCC+0.5

0 to 70(C grade)

-20 to 80(E grade)

-40 to 85(I grade)

-65 to 150

℃

Operating Temperature

℃

Storage Temperature

Power Dissipation

DC Output Current

TSTG

IOUT

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

TRUTH TABLE

CE#

OE#

WE#

SUPPLY CURRENT

MODE

I/O OPERATION

Standby

High-Z

I_SB,I_SB1

I_CC

Output Disable

Read

High-Z

D_OUT

D_IN

I_CC

Write

I_CC

Note: H = V_IH, L = V_IL, X = Don't care.

DC ELECTRICAL CHARACTERISTICS

SYMBOL

TEST CONDITION

-8/-10

MIN.

3.15

3.0

2.0

- 0.3

- 1

TYP. ^*4

3.3

MAX.

3.6

V_CC+0.5

0.8

UNIT

PARAMETER

Supply Voltage

V_CC

-12/-15

3.3

Input High Voltage

Input Low Voltage

Input Leakage Current

Output Leakage

Current

V_IH

V_IL

I_LI

_CC≧ V_IN≧ V_SS

_CC≧ V_OUT≧ V_SS,

Output Disabled

I_LO

- 1

Output High Voltage

Output Low Voltage

V_OHI_OH= -4mA

V_OLI_OL= 8mA

2.4

0.4

150

120

100

3 ^*5

-8

Cycle time = Min.

-10

-12

-15

Average Operating

Power supply Current

I_CC

CE# = V_IL, I_I/O= 0mA

Other pins at V_IHor V_IL

I_SB

CE# = V_IH,others at V_IHor V_IL

CE# ≧V_CC- 0.2V,

Other pins at 0.2V or V_CC-0.2V

Standby Power

Supply Current

I_SB1

0.6

Notes:

1. V_IH(max) = V_CC+ 3.0V for pulse width less than 10ns.

2. V_IL(min) = V_SS- 3.0V for pulse width less than 10ns.

3. Over/Undershoot specifications are characterized, not 100% tested.

4. Typical values are included for reference only and are not guaranteed or tested.

℃

Typical valued are measured at V_CC= V_CC(TYP.) and T_A= 25

5. 1mA for special request

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

CAPACITANCE (TA = 25℃, f = 1.0MHz)

PARAMETER

Input Capacitance

Input/Output Capacitance

SYMBOL

MIN.

MAX

UNIT

C_IN

C_I/O

Note : These parameters are guaranteed by device characterization, but not production tested.

AC TEST CONDITIONS

Input Pulse Levels

0.2V to V_CC- 0.2V

Input Rise and Fall Times

Input and Output Timing Reference Levels

Output Load

3ns

1.5V

C_L= 30pF + 1TTL, I_OH/I_OL= -4mA/8mA

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER

SYM.

UNIT

LY61L1288 LY61L1288 LY61L1288 LY61L1288

-8 -10 -12 -15

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

Read Cycle Time

Address Access Time

Chip Enable Access Time

Output Enable Access Time

Chip Enable to Output in Low-Z

Output Enable to Output in Low-Z t_OLZ

Chip Disable to Output in High-Z t_CHZ

Output Disable to Output in High-Z t_OHZ

Output Hold from Address Change t_OH

t_RC

t_AA

t_ACE

t_OE

t_CLZ

(2) WRITE CYCLE

PARAMETER

SYM.

UNIT

LY61L1288 LY61L1288 LY61L1288 LY61L1288

-8 -10 -12 -15

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

Write Cycle Time

t_WC

6.5

1.5

Address Valid to End of Write

Chip Enable to End of Write

Address Set-up Time

Write Pulse Width

Write Recovery Time

Data to Write Time Overlap

Data Hold from End of Write Time t_DH

Output Active from End of Write

Write to Output in High-Z

t_AW

t_CW

t_AS

t_WP

t_WR

t_DW

t_OW

t_WHZ

*These parameters are guaranteed by device characterization, but not production tested.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

TIMING WAVEFORMS

READ CYCLE 1 (Address Controlled) (1,2)

tRC

Address

Dout

tAA

tOH

Previous Data Valid

Data Valid

READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)

tRC

Address

tAA

CE#

tACE

OE#

tOE

tOLZ

tOH

tOHZ

tCHZ

tCLZ

High-Z

Dout

High-Z

Data Valid

Notes :

1.WE# is high for read cycle.

2.Device is continuously selected OE# = low, CE# = low_.

3.Address must be valid prior to or coincident with CE# = low_,; otherwise t_AAis the limiting parameter.

4.t_CLZ, t_OLZ, t_CHZand t_OHZare specified with C_L= 5pF. Transition is measured ±500mV from steady state.

5.At any given temperature and voltage condition, t_CHZis less than t_CLZ, t_OHZis less than t_OLZ.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)

tWC

Address

tAW

CE#

tCW

tAS

tWP

tWR

WE#

Dout

Din

tWHZ

TOW

High-Z

(4)

tDW

tDH

Data Valid

WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)

tWC

Address

tAW

CE#

tAS

tWR

tCW

tWP

WE#

Dout

Din

tWHZ

High-Z

(4)

tDW

tDH

Data Valid

Notes :

1.WE#, CE# must be high during all address transitions.

2.A write occurs during the overlap of a low CE#, low WE#.

3.During a WE# controlled write cycle with OE# low, t_WPmust be greater than t_WHZ+ t_DWto allow the drivers to turn off and data to be

placed on the bus.

4.During this period, I/O pins are in the output state, and input signals must not be applied.

5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.

6.t_OWand t_WHZare specified with C_L= 5pF. Transition is measured ±500mV from steady state.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

DATA RETENTION CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CCfor Data Retention

V_DRCE# ≧ V_CC- 0.2V

2.0

3.6

V_CC= 2.0V

Data Retention Current

I_DR

CE# ≧ V_CC- 0.2V

others at 0.2V or V_CC- 0.2V

See Data Retention

Waveforms (below)

0.4

Chip Disable to Data

Retention Time

Recovery Time

t_CDR

t_R

t_RC

t_{RC = Read Cycle Time}

DATA RETENTION WAVEFORM

VDR ≧ 2.0V

Vcc(min.)

Vcc

Vcc(min.)

tCDR

V^IH

CE# ≧ Vcc-0.2V

VIH

CE#

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

PACKAGE OUTLINE DIMENSION

32 pin 8mm x 13.4mm STSOP Package Outline Dimension

12° (2x)

"A"

Seating Plane

12° (2X)

GAUGE PLANE

SEATING PLANE

12° (2X)

"A" DATAIL VIEW

UNIT

INCH(BASE)

0.049 (MAX)

MM(REF)

1.25 (MAX)

SYM.

0.004 0.002 0.10 0.05

0.039 0.002 1.00 0.05

0.009 0.002 0.22 0.05

0.006 0.002 0.155 0.055

0.465 0.008 11.80 0.20

0.315 0.008 8.00 0.20

0.020 (TYP) 0.50 (TYP)

13.40 0.20.

0.50 0.20

0.528 0.008

0.02 0.008

0.031 0.005 0.8 0.125

0.003 (MAX) 0.076 (MAX)

～

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

Ⅱ

32-pin 400mil TSOP-

Package Outline Dimension

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

ORDERING INFORMATION

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288

128K X 8 BIT HIGH SPEED CMOS SRAM

Rev. 1.5

THIS PAGE IS LEFT BLANK INTENTIONALLY.

Lyontek Inc. ^{reserves the rights to change the specifications and products without notice.}

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

LY61L1288RL-15T [LYONTEK]

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