JPAD200-TO-92-2L [Linear]

Rectifier Diode, 1 Element, 0.1A, 35V V(RRM),;


型号：	JPAD200-TO-92-2L
厂家：	Linear
描述：	Rectifier Diode, 1 Element, 0.1A, 35V V(RRM),
文件：	总2页 (文件大小：257K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PAD SERIES

PICO AMPERE DIODES

FEATURES

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES

REVERSE BREAKDOWN VOLTAGE

BV_R≥ -30V

C_rss≤ 2.0pF

PAD1,2,5

PAD50

REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to +150 °C

JPAD

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (PAD)

Continuous Power Dissipation (J/SSTPAD)

Maximum Currents

SSTPAD

SOT-23

TOP VIEW

300mW

350mW

Forward Current (PAD)

50mA

10mA

Forward Current (J/SSTPAD)

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

ALL PAD

ALL SSTPAD

ALL JPAD

-45

Reverse Breakdown

Voltage

BV_R

-30

-35

I_R= -1µA

V_F

Forward Voltage

0.8

0.5

1.5

0.8

I_F= 5mA

PAD1,5

C_rss

Total Reverse Capacitance

V_R= -5V, f = 1MHz

All Others

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL CHARACTERISTIC

PAD

-1

JPAD

SSTPAD

UNITS CONDITIONS

PAD1

PAD2

-2

(SST/J)PAD5

(SST/J)PAD10

(SST/J)PAD20

(SST/J)PAD50

(SST/J)PAD100

(SST/J)PAD200

(SST/J)PAD500

-5

-10

-20

-50

-100

-10

-20

-50

Maximum Reverse

Leakage Current

-20

I_R

V_R= -20V

-50

-100

-200

-500

1. Derate 2mW/°C above 25°C

2. Derate 2.8mW/°C above 25°C

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES

Figure 1. Operational Amplifier Protection

Input Differential Voltage limited to 0.8V (typ) by JPADs D₁and D₂. Common

Mode Input voltage limited by JPADs D₃and D₄to ±15V.

Figure 2. Sample and Hold Circuit

Typical Sample and Hold circuit with clipping. JPAD diodes reduce offset

voltages fed capacitively from the JFET switch gate.

FIGURE 2

FIGURE 1

+V -V

JPAD5

JPAD20

2N4117A

+15V -15V

OP-27

2N4393

e_in

CONTROL

SIGNAL

V_OUT

TO-72

Three Lead

SOT-23

0.89

1.03

0.37

0.51

1.78

2.05

2.80

3.04

1.20

1.40

0.89

1.12

2.10

2.64

0.085

0.180

0.013

0.100

0.55

DIMENSIONS IN

MILLIMETERS

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.

2. The PAD type number denotes its maximum reverse current value in pico amperes. Devices with I_Rvalues intermediate to those shown

are available upon request.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its

use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Linear Integrated Systems.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing

high-quality discrete components. Expertise brought to LIS is based on processes and products developed

at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,

a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,

co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES

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