LT4256-3CGN [Linear]

Positive High Voltage Hot Swap Controller with Open-Circuit Detect; 正高电压热插拔控制器开路检测
LT4256-3CGN
型号: LT4256-3CGN
厂家: Linear    Linear
描述:

Positive High Voltage Hot Swap Controller with Open-Circuit Detect
正高电压热插拔控制器开路检测

电源电路 电源管理电路 光电二极管 控制器
文件: 总20页 (文件大小:306K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
LT4256-3  
Positive High Voltage  
Hot Swap Controller  
with Open-Circuit Detect  
U
FEATURES  
DESCRIPTIO  
Allows Safe Board Insertion and Removal from a  
TheLT®4256-3isahighvoltageHotSwapTM controllerthat  
allows a board to be safely inserted and removed from a  
live backplane. An internal driver controls the high side  
N-channel MOSFET gate for supply voltages ranging from  
10.8V to 80V. The part features an open-circuit detect  
(OPEN) output that indicates abnormally low load current  
conditions.  
Live Backplane  
Controls Supply Voltage from 10.8V to 80V  
Foldback Current Limiting  
Open Circuit and Overcurrent Fault Detect  
Drives an External N-Channel MOSFET  
Automatic Retry or Latched Off Operation  
After Overcurrent Fault  
The LT4256-3 also features an adjustable analog foldback  
currentlimit.Ifthesupplyremainsincurrentlimitformore  
than a programmable time, the N-channel MOSFET shuts  
off, the PWRGD output asserts low and the LT4256-3  
either automatically restarts after a time-out delay or  
latches off until the UV pin is cycled low (depending on the  
status of the RETRY pin).  
Programmable Supply Voltage Power-Up Rate  
Open MOSFET Detection  
1% Over and Undervoltage Detection Accuracy  
Available in a 16-Lead SSOP Package  
U
APPLICATIO S  
Hot Board Insertion  
The PWRGD output indicates when the output voltage  
rises above a programmed level. An external resistor  
stringfromVCC providesprogrammableundervoltageand  
overvoltage protection.  
Electronic Circuit Breaker/Power Bussing  
Industrial High Side Switch/Circuit Breaker  
24V/48V Industrial/Alarm Systems  
Ideally Suited for 12V, 24V and 48V Distributed  
The LT4256-3 is available in a 16-lead SSOP package.  
Power Systems  
48V Telecom Systems  
, LTC and LT are registered trademarks of Linear Technology Corporation.  
Hot Swap is a trademark of Linear Technology Corporation.  
U
TYPICAL APPLICATIO  
48V, 2A Hot Swap Controller  
0.020  
V
IRF540  
OUT  
LT4256-3 Start-Up Behavior  
V
IN  
48V  
48V  
+
2A  
SMAT70A  
C
CMPZ5241BS  
11V  
L
V
(SHORT PIN)  
IN  
50V/DIV  
CONTACT BOUNCE  
V
SENSE  
CC  
51k  
36.5k  
4.02k  
64.9k  
10nF  
10Ω  
V
OUT  
100Ω  
50V/DIV  
UV  
OV  
GATE  
LT4256-3  
INRUSH  
CURRENT  
500mA/DIV  
V
0.01µF  
OUT  
4.02k  
4.02k  
FB  
PWRGD  
50V/DIV  
PWRGD  
OPEN  
PWRGD  
RETRY  
42563 TA02  
2.5ms/DIV  
4256 TA01  
UV = 36V  
OV = 73V  
PWRGD = 40V  
TIMER  
GND  
33nF  
GND  
42563f  
1
LT4256-3  
W W  
U W  
U
W
U
ABSOLUTE AXI U RATI GS  
PACKAGE/ORDER I FOR ATIO  
(Note 1)  
Supply Voltage (VCC) ................................ 0.3 to 100V  
SENSE, PWRGD ....................................... 0.3 to 100V  
GATE Voltage (Note 2).................... 0.3V to VCC + 10V  
GATE Maximum Current ..................................... 200µA  
VOUT .......................................................... –3V to 100V  
FB, UV, OPEN ............................................. 0.3 to 44V  
OV .............................................................. 0.3 to 18V  
RETRY ........................................................ 0.3 to 15V  
TIMER Voltage......................................... 0.3V to 4.3V  
Maximum Input Current (TIMER) ....................... 100µA  
Operating Temperature  
ORDER PART  
TOP VIEW  
NUMBER  
1
2
3
4
5
6
7
8
V
CC  
16  
15  
14  
13  
12  
11  
10  
9
UV  
OV  
SENSE  
NC  
LT4256-3CGN  
LT4256-3IGN  
NC  
GATE  
OPEN  
PWRGD  
NC  
V
OUT  
NC  
GN PART MARKING  
FB  
RETRY  
GND  
TIMER  
42563  
42563I  
GN PACKAGE  
16-LEAD PLASTIC SSOP  
TJMAX = 125°C, θJA = 130°C/W  
LT4256-3C ............................................. 0°C to 70°C  
LT4256-3I ......................................... 40°C to 85°C  
Storage Temperature Range ................ 65°C to 150°C  
Lead Temperature (Soldering, 10 sec)................. 300°C  
Consult LTC Marketing for parts specified with wider operating temperature ranges.  
ELECTRICAL CHARACTERISTICS  
The denotes the specifications which apply over the full operating  
temperature range, otherwise specifications are at TA = 25°C. VCC = 48V unless otherwise noted.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
80  
UNITS  
V
CC  
Operating Voltage  
Operating Current  
Undervoltage Threshold  
Hysteresis  
10.8  
V
mA  
V
I
1.8  
4
3.9  
CC  
V
V
V
CC  
Low-to-High Transition  
3.96  
0.25  
4.04  
0.55  
UVLH  
UVHYS  
INUV  
0.4  
V
I
UV Input Current  
UV 1.2V  
UV = 0V  
–0.1  
–1.5  
–1  
–3  
µA  
µA  
V
V
V
Fault Latch Reset Threshold Voltage  
Overvoltage Threshold  
Hysteresis  
0.4  
0.85  
4
1.2  
4.04  
0.55  
1
V
V
UVRTH  
V
Low-to-High Transition  
3.96  
0.25  
OVLH  
CC  
0.4  
0.1  
3
V
OVHYS  
INOV  
I
OV Input Current  
0V OV < 7V  
µA  
mV  
V
V
Open-Circuit Voltage Threshold (V – V  
)
1.5  
6.5  
OPEN  
CC  
SENSE  
OPEN Output Low Voltage  
I = 2mA  
0.20  
0.75  
0.5  
1.3  
V
V
OLOPEN  
O
I = 5mA  
O
I
Leakage Current  
V
OPEN  
= 5V  
0.1  
1
µA  
INOPEN  
V
SENSE Pin Trip Voltage (V – V  
)
FB = 0V  
FB 2V  
7
45  
14  
55  
22  
65  
mV  
mV  
SENSETRIP  
CC  
SENSE  
I
I
I
I
SENSE Pin Input Current  
GATE Pull-Up Current  
GATE Pull-Down Current  
V
= V  
CC  
40  
30  
62  
70  
55  
80  
µA  
µA  
INSNS  
PU  
SENSE  
Charge Pump On, V  
= 7V  
–16  
40  
GATE  
Any Fault, V  
> V  
= V  
mA  
µA  
PD  
GATE  
GATE  
OUT  
V
OUT  
Pull-Down Current, Fault Condition  
Any Fault, V  
+ V ,  
GATEL  
130  
PDL  
OUT  
V
V
= 48V  
OUT  
V  
V  
External N-Channel Gate Drive (Note 2)  
External N-Channel Gate Drive, Fault Condition  
– V , 10.8V V 20V  
4.5  
10  
8.8  
11.6  
12.5  
12.8  
V
V
GATE  
GATE  
OUT  
CC  
20V V 80V  
CC  
V
GATE  
– V , V = 48V  
OUT OUT  
–2  
V
GATEL  
42563f  
2
LT4256-3  
ELECTRICAL CHARACTERISTICS  
The denotes the specifications which apply over the full operating  
temperature range, otherwise specifications are at TA = 25°C. VCC = 48V unless otherwise noted.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
FB Voltage Threshold  
FB High-to-Low Transition  
FB Low-to-High Transition  
3.95  
4.20  
3.99  
4.45  
4.03  
4.65  
V
V
FB  
V
V
FB Hysteresis Voltage  
0.3  
0.45  
0.60  
V
FBHYS  
OLPGD  
PWRGD Output Low Voltage  
I
= 1.6mA  
0.25  
0.60  
0.4  
1.0  
V
V
O
I = 5mA  
O
I
I
I
I
PWRGD Pin Leakage Current  
FB Input Current  
V
= 80V  
PWRGD  
0.1  
–0.1  
115  
3
1
–1  
–145  
5
µA  
µA  
µA  
µA  
V
PWRGD  
INFB  
FB = 4.5V  
TIMER Pull-Up Current  
TIMER Pull-Down Current  
TIMER Shutdown Threshold  
Duty Cycle (RETRY Mode)  
RETRY Threshold  
85  
1.5  
4.3  
1.5  
0.4  
TIMERPU  
TIMERPD  
V
C
= 10nF  
TIMER  
4.65  
3
5
THTIMER  
D
4.5  
1.2  
–130  
3
%
V
TIMER  
RETRYTH  
INRTR  
V
0.85  
–87  
1.7  
6
I
t
t
t
t
t
RETRY Input Current  
RETRY = GND  
µA  
µs  
µs  
µs  
µs  
µs  
UV Low to GATE Low  
UV High to GATE High  
FB Low to PWRGD Low  
FB High to PWRGD High  
C
C
= 100pF  
= 100pF  
PHLUV  
PLHUV  
PHLFB  
GATE  
GATE  
9
0.8  
3.2  
1
2
5
PLHFB  
(V – V  
CC  
) High to GATE Low  
SENSE  
V
– V = 275mV  
SENSE  
3
PHLSENSE  
CC  
Note 2: An internal clamp limits the GATE pin to a minimum of 10V above  
. Driving this pin to a voltage beyond the clamp voltage may damage  
Note 1: Absolute Maximum Ratings are those values beyond which the life  
of a device may be impaired.  
V
CC  
the part.  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Specifications are at TA = 25°C unless otherwise noted.  
SENSE Regulation Voltage  
vs Temperature  
ICC vs VCC  
ICC vs Temperature  
58  
53  
48  
20  
15  
10  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
V
= 48V  
CC  
FB > 2V  
2.5  
2.0  
1.5  
1.0  
0.5  
FB = 0V  
25  
0
–50  
0
50  
75  
100  
10 20  
30  
40  
V
50  
60  
70  
80  
–50  
0
25  
50  
75  
100  
–25  
–25  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
(V)  
CC  
42563 G01  
42563 G02  
42563 G03  
42563f  
3
LT4256-3  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Specifications are at TA = 25°C unless otherwise noted.  
GATE Pull-Down Current  
vs Temperature  
GATE Pull-Down Capability vs VCC  
Below Minimum Operating Voltage  
GATE Pull-Up Current  
vs Temperature  
60  
50  
40  
30  
20  
10  
0
63  
62  
61  
60  
59  
58  
57  
56  
0
–5  
–10  
–15  
–20  
–25  
–30  
–35  
–40  
0
4
6
8
10  
12  
2
–50  
0
25  
50  
75  
100  
–25  
–50  
0
25  
50  
75  
100  
–25  
V
CC  
(V)  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
42563 G17  
42563 G05  
42563 G04  
VGATE – VOUT Voltage  
vs Temperature  
VGATE – VOUT Voltage  
vs Temperature  
TIMER Currents vs Temperature  
14  
12  
10  
8
14.0  
13.5  
13.0  
12.5  
12.0  
11.5  
11.0  
10.5  
10.0  
5.0  
2.5  
PULL-DOWN CURRENT  
V
= 18V  
CC  
0
V
= 12V  
CC  
–80  
–100  
–120  
–140  
V
= 20V  
= 48V  
CC  
6
V
V
= 10.8V  
CC  
CC  
V
= 80V  
CC  
PULL-UP CURRENT  
4
2
0
–50  
0
25  
50  
75  
100  
–50  
0
25  
50  
75  
100  
–50  
0
25  
50  
75  
100  
–25  
–25  
–25  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
42563 G06  
42563 G07  
42563 G08  
TIMER Shutdown Threshold  
vs Temperature  
TIMER Currents vs VCC  
UV Current vs UV Voltage  
0.4  
0.2  
5.0  
2.5  
0
5.4  
5.2  
5.0  
4.8  
4.6  
4.4  
4.2  
0
PULL-DOWN CURRENT  
0
–0.2  
–0.4  
–0.6  
–0.8  
–1.0  
–1.2  
–1.4  
–80  
–100  
–120  
–140  
PULL-UP CURRENT  
50  
70  
80  
–50  
0
25  
50  
75  
0
1
2
3
4
10 20 30  
50  
40  
10 20  
30  
40  
V
60  
100  
–25  
TEMPERATURE (°C)  
V
(V)  
(V)  
UV  
CC  
42563 G09  
42563 G10  
42563 G18  
42563f  
4
LT4256-3  
U W  
TYPICAL PERFOR A CE CHARACTERISTICS  
Specifications are at TA = 25°C unless otherwise noted.  
UV Thresholds vs Temperature  
OV Current vs OV Voltage  
OV Thresholds vs Temperature  
250  
200  
4.1  
4.0  
3.9  
3.8  
3.7  
3.6  
3.5  
4.1  
4.0  
3.9  
3.8  
3.7  
3.6  
3.5  
L-H THRESHOLD  
L-H THRESHOLD  
150  
100  
50  
0
H-L THRESHOLD  
H-L THRESHOLD  
–50  
0
5
10  
(V)  
15  
20  
–50  
0
25  
50  
75  
100  
–50  
0
25  
50  
75  
100  
–25  
–25  
V
OV  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
42563 G19  
42563 G11  
42563 G12  
OPEN Threshold Voltage  
vs Temperature  
PWRGD Output Voltage  
vs IPWRGD  
OPEN Output Voltage vs IOPEN  
6
5
4
3
2
1
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
10  
9
8
7
6
5
4
3
2
1
0
V
CC  
– V  
SENSE  
0
4
6
8
10  
12  
2
0
2
6
8
10  
12  
–50  
0
25  
50  
75  
100  
4
–25  
I
(mA)  
I
(mA)  
TEMPERATURE (°C)  
PWRGD  
OPEN  
42563 G15  
42563 G13  
42563 G14  
FB Thresholds vs Temperature  
FB Current vs FB Voltage  
0.2  
4.5  
4.4  
4.3  
4.2  
4.1  
4.0  
3.9  
L-H THRESHOLD  
0.1  
0
–0.1  
–0.2  
–0.3  
–0.4  
H-L THRESHOLD  
0
10  
20  
30  
(V)  
40  
50  
–50  
0
25  
50  
75  
100  
–25  
V
FB  
TEMPERATURE (°C)  
42563 G20  
42563 G16  
42563f  
5
LT4256-3  
U
U
U
PI FU CTIO S  
UV (Pin 1): Undervoltage Sense Input. UV is an input that  
enables the output voltage. When UV is driven above 4V,  
GATE will start charging and the output turns on. When  
UV goes below 3.6V, GATE discharges and the output  
shuts off.  
GND (Pin 8): Device Ground. This pin must be tied to a  
ground plane for best performance.  
TIMER (Pin 9): Timing Input. An external timing capacitor  
from TIMER to GND programs the maximum time the part  
is allowed to remain in current limit. When the part goes  
into current limit, a 115µA pull-up current source starts to  
charge the timing capacitor. When the voltage on TIMER  
reaches 4.65V (typ), GATE is pulled low; the TIMER pull-  
upcurrentwillbeturnedoffandthecapacitorisdischarged  
bya3µApull-downcurrent.WhenTIMERfallsbelow0.65V  
(typ), GATE turns on again if RETRY is high (if RETRY is  
low, UV must be pulsed low to reset the internal fault latch  
before GATE will turn on). If RETRY is grounded and UV is  
not cycled low, GATE remains latched off and TIMER will  
bedischargedtonearground. UVmustbecycledlowafter  
TIMER has discharged below 0.65V (typ) to reset the part.  
Pulsing UV to below 0.4V for at least 5µs after a current  
limit fault cycle resets the fault latch (when RETRY pin is  
low, commanding latch off operation) and allows the part  
to turn back on. This command is only accepted after  
TIMER is discharged below 0.65V. To disable UV sensing,  
connect the pin to a voltage between 5V and 44V.  
OV (Pin 2): Overvoltage Sense Input. OV is an input that  
disables the output voltage. If OV ever goes above 4V,  
GATE is discharged and the output shuts off. When OV  
goes below 3.6V, GATE starts charging and the output  
turnsbackon.Todisableovervoltagesensing,connectpin  
to ground.  
If RETRY is floating or connected to a voltage above its  
1.2V threshold, the LT4256-3 automatically restarts after  
acurrentfault.Underanoutputshort-circuitcondition,the  
LT4256-3 cycles on and off with a 3% on-time duty cycle.  
NC (Pins 3, 6, 11, 14): No Connect. Not connected to any  
internal circuitry.  
OPEN (Pin 4): Open Circuit Detect Output. This pin is an  
open collector output that releases and is pulled high  
through an external resistor if the load current is less than  
(3mV)/R5.  
FB (Pin 10): Power Good Comparator Input. FB monitors  
the output voltage through an external resistive divider.  
When the voltage on FB is lower than the high-to-low  
threshold of 3.99V, PWRGD is pulled low and released  
when FB is pulled above the 4.45V low-to-high threshold.  
PWRGD (Pin 5): Power Good Output. PWRGD is pulled  
lowwheneverthevoltageonFBfallsbelowthehigh-to-low  
threshold voltage. It goes into a high impedance state  
when the voltage on FB exceeds the low-to-high threshold  
voltage. An external pull-up resistor can pull PWRGD to a  
voltage higher or lower than VCC.  
The voltage present on FB affects foldback current limit  
(see Figure 8 and related discussion).  
VOUT (Pin 12): Output Voltage Sense Input. This pin  
shouldbeconnectedtothesourceoftheexternalMOSFET.  
ItisusedtosensewhentheMOSFETisshutoff(duringany  
fault mode) and to reduce the pull-down current on GATE.  
ThisprotectstheLT4256-3fromexcessivepowerdissipa-  
tion when large output capacitors are used.  
RETRY (Pin 7): Current Fault Retry Input. RETRY com-  
mands the operational mode of the current limit. If RETRY  
is floating, the LT4256-3 automatically restarts after a  
current fault. If it is connected to a voltage below 0.4V, it  
willlatchoffafteracurrentfault(whichrequiresthatUVbe  
cycled low in order to start normal operation again).  
42563f  
6
LT4256-3  
U
U
U
PI FU CTIO S  
GATE (Pin 13): High Side Gate Drive for the External  
N-Channel MOSFET. An internal charge pump guarantees  
at least 10V of gate drive for VCC supply voltages above  
20V and 4.5V of gate drive for VCC supply voltages  
between 10.8V and 20V. The rising slope of the voltage on  
GATE is set by an external capacitor connected from GATE  
to GND and an internal 30µA pull-up current source from  
the charge pump output.  
GATE is 2V (typ) below VOUT. When GATE is below VOUT  
by 2V, the 62mA is reduced to 130µA to protect the  
LT4256-3 against damage if VOUT has large capacitance.  
AZenerdiodeisneededbetweenthegateandsourceofthe  
external MOSFET to protect its gate oxide under instanta-  
neous short-circuit conditions. See Applications Informa-  
tion.  
SENSE (Pin 15): Current Limit Sense Input. A sense  
resistor is placed in the supply path between VCC and  
SENSE. The current limit circuit regulates the voltage  
across the sense resistor (VCC – SENSE) to 55mV while in  
current limit when FB is 2V or higher. If FB drops below  
2V, the regulated voltage across the sense resistor de-  
creases linearly and stops at 14mV when FB is 0V. The  
OPEN output also uses SENSE to detect when the output  
current is less than (3mV)/R5.  
If the current limit is reached, the GATE voltage is adjusted  
to maintain a constant voltage across the sense resistor  
while the timing capacitor starts to charge. If the TIMER  
voltage ever exceeds 4.65V, GATE is pulled low.  
GATE is also pulled to GND whenever UV is pulled low; the  
VCC supplyvoltagedropsbelowtheexternallyprogrammed  
undervoltage threshold, above the overvoltage threshold  
or below the internal UVLO threshold (9.8V).  
To defeat current limit, connect SENSE to VCC.  
GATEisclampedinternallytoamaximumvoltageof11.6V  
(typ) above VOUT under normal operating conditions.  
Drivingthispinbeyondtheclampvoltagemaydamagethe  
part. GATE is also clamped to 2V (typ) below VOUT. When  
the gate is commanded off due to a fault condition, it is  
discharged quickly by a 62mA (typ) capable switch until  
VCC (Pin 16): Input Supply Voltage. The positive supply  
input ranges from 10.8V to 80V for normal operation. ICC  
istypically1.8mA.AninternalcircuitdisablestheLT4256-3  
for inputs less than 9.8V (typ).  
42563f  
7
LT4256-3  
W
BLOCK DIAGRA  
V
SENSE  
15  
CC  
16  
+
OPEN  
CIRCUIT  
4
OPEN  
3mV  
V
P
V
GEN  
P
10  
FB  
CURRENT  
LIMIT  
+
14mV TO 55mV  
12  
13  
V
OUT  
CHARGE  
PUMP  
AND  
GATE  
+
GATE  
DRIVER  
FOLDBACK  
2V  
+
REF GEN  
4V  
5
PWRGD  
4V  
7V  
100k  
7
1
2
RETRY  
UV  
OV  
V
CC  
INTERNAL  
UV  
9.8V  
+
4V  
LOGIC  
UV  
+
+
0.65V  
TIMER LOW  
V
P
118µA  
OV  
4V  
+
+
TIMER HIGH  
4.65V  
9
TIMER  
3µA  
8
4256 BD  
GND  
42563f  
8
LT4256-3  
TEST CIRCUIT  
48V  
+
PWRGD  
V
CC  
OPEN SENSE  
FB  
GATE  
100pF  
48V  
3V  
+
+
+
OV  
UV  
V
OUT  
TIMER  
3V  
RETRY  
GND  
4256 F01  
Figure 1  
W U  
W
TI I G DIAGRA S  
4V  
3.6V  
UV  
t
t
PLHUV  
PHLUV  
GATE  
2V  
4256 F02  
2V  
Figure 2. UV to GATE Timing  
4V  
3.65V  
FB  
t
t
PLHFB  
PHLFB  
PWRGD  
1V  
1V  
4256 F03  
Figure 3. VOUT to PWRGD Timing  
V
CC  
– SENSE  
55mV  
t
PHLSENSE  
V
CC  
GATE  
4256 F04  
Figure 4. SENSE to GATE Timing  
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Hot Circuit Insertion  
When the power pins first make contact, transistor Q1 is  
held off. If the voltage on VCC is between the externally  
programmed undervoltage and overvoltage thresholds,  
When circuit boards are inserted into a live backplane, the  
supply bypass capacitors on the boards draw high peak  
currents from the backplane power bus as they charge.  
The transient currents can permanently damage the con-  
nector pins and glitch the system supply, causing other  
boards in the system to reset.  
V
CC is above 9.8V and the voltage on TIMER is less than  
4.65V (typ), transistor Q1 will be turned on (Figure 6). The  
voltage on GATE rises with a slope equal to 30µA/C1 and  
the supply inrush current is set at:  
IINRUSH = CL • 30µA/C1  
(1)  
The LT4256-3 is designed to turn on a board’s supply  
voltage in a controlled manner, allowing the board to be  
safely inserted or removed from a live backplane. The  
device also provides undervoltage and overvoltage as well  
as overcurrent protection while a power good output  
signal indicates when the output supply voltage is ready  
with a high output.  
where CL is the total load capacitance.  
I
OUT  
500mA/DIV  
PWRGD  
50V/DIV  
Power-Up Sequence  
V
OUT  
An external N-channel MOSFET pass transistor (Q1) is  
placed in the power path to control the power up of the  
supply voltage (Figure 5). Resistor R5 provides current  
detection and capacitor C1 controls the GATE slew rate.  
Resistor R7 compensates the current control loop while  
R6 prevents high frequency oscillations in Q1.  
50V/DIV  
GATE  
50V/DIV  
4256 F06  
5ms/DIV  
Figure 6. Start-Up Waveforms  
Q1  
IRF530  
R5  
V
0.025  
OUT  
V
IN  
48V  
48V  
+
D1  
1.6A  
D2  
SMAT70A  
C
CMPZ5241BS  
11V  
L
(SHORT PIN)  
16  
15  
V
CC  
SENSE  
R1  
64.9k  
R6  
R8  
36.5k  
10Ω  
1
13  
UV  
GATE  
LT4256-3  
R7  
100Ω  
R4  
51k  
C3  
0.01µF  
R2  
C1  
4.02k  
10nF  
12  
10  
2
OV  
V
OUT  
FB  
R3  
4.02k  
R9  
4.02k  
4
7
5
OPEN  
RETRY  
9
PWRGD  
PWRGD  
TIMER  
4256 F05  
C2  
33nF  
GND  
8
GND  
UV = 36V  
OV = 73V  
PWRGD = 40V  
Figure 5. 1.6A, 48V Latchoff Application  
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To reduce inrush current, increase C1 or decrease load  
capacitance. If the voltage across the current sense resis-  
tor R5 reaches VSENSETRIP, the inrush current will be lim-  
ited by the internal current limit circuitry. The voltage on  
GATEisadjustedtomaintainaconstantvoltageacrossthe  
sense resistor and TIMER begins to charge.  
noise spikes and capacitively coupled glitches from shut-  
ting down the LT4256-3 output erroneously.  
To calculate UV and OV thresholds, use the following  
equations:  
V
R1= R2 +R3 THUVLH – 1  
2a  
( )  
(
)
When the FB voltage goes above the low-to-high VFB  
threshold, PWRGD goes high.  
4V  
R1+R2  
R3 =  
2b  
( )  
V
THOVLH – 1  
Undervoltage and Overvoltage Detection  
4
The LT4256-3 uses UV and OV to monitor the VCC voltage  
to determine when it is safe to turn on the load and allow  
the user the greatest flexibility for setting the operational  
thresholds. UV and OV are internally connected to an  
analog window comparator. Any time that UV goes below  
3.6VorOVgoesabove4V,GATEwillbepulledlowuntilthe  
UV/OV voltages return to the normal operation voltage  
window (4V and 3.6V, respectively).  
20kΩ ≤ R1+R2 +R3 200kΩ  
3
( )  
R1  
V
THUVHL = 3.6V 1+  
;
4
( )  
R2 +R3  
R1+R2  
R3  
VTHOVHL = 3.6V 1+  
where VTHULH and VTHOVLH are the desired UV and OV  
threshold voltages when VCC is rising (L – H).  
The UV threshold should never be set below the internal  
UVLO threshold (9.8V typically) because the benefit of the  
UV’s hysteresis will be lost, making the LT4256-3 more  
susceptible to noise (VCC must be at least 9.8V when UV  
is at its 3.6V threshold). UV is filtered with C3 to prevent  
Figure 7 shows how the LT4256-3 is commanded to shut  
off with a logic signal. This is accomplished by pulling the  
gate of the open-drain MOSFET, Q2, (tied to UV) high.  
R5  
0.010Ω  
Q1  
IRF540  
V
OUT  
48V  
4A  
V
CC  
48V  
D2  
D1  
+
SMAT70A  
CMPZ5241BS  
11V  
C
L
(SHORT PIN)  
16  
15  
SENSE  
R1  
V
CC  
R6  
R8  
64.9k  
10Ω  
36.5k  
1
13  
UV  
GATE  
LT4256-3  
OFF SIGNAL  
FROM MPU  
R7  
100Ω  
Q2  
VN2222  
C3  
0.01µF  
R2  
4.02k  
C1  
10nF  
12  
10  
2
OV  
V
OUT  
FB  
R4  
51k  
R3  
4.02k  
R9  
4.02k  
4
9
7
5
OPEN  
RETRY  
TIMER  
PWRGD  
4256 F07  
C2  
33nF  
GND  
GND  
UV = 36V  
OV = 73V  
8
PWRGD = 40V  
Figure 7. How to Use a Logic Signal to Control the LT4256-3 Turn On/Off  
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Short-Circuit Protection  
voltage across the sense resistor is held constant at 55mV  
(see Figure 8).  
The LT4256-3 features a programmable foldback current  
limitwithanelectroniccircuitbreakerthatprotectsagainst  
short circuits or excessive load currents. The current limit  
is set by placing a sense resistor (R5) between VCC and  
SENSE. The current limit threshold is calculated as:  
For a 0.025sense resistor, the typical current limit is set  
at 2200mA and folds back to 560mA when the output is  
shorted to ground. Thus, MOSFET peak power dissipation  
under short-circuit conditions is reduced from 106W to  
27W. SeetheLayoutConsiderationssectionforimportant  
information about board layout to minimize current limit  
threshold error.  
ILIMIT = 55mV/R5  
(5)  
To limit excessive power dissipation in the pass transistor  
and to reduce voltage spikes on the input supply during  
short-circuit conditions at the output, the current folds  
back as a function of the output voltage, which is sensed  
internally on FB.  
The LT4256-3 also features a variable overcurrent re-  
sponse time. The time required for the part to regulate the  
GATE voltage is a function of the voltage across the sense  
resistor connected between VCC and SENSE. This helps to  
eliminate sensitivity to current spikes and transients that  
might otherwise unnecessarily trigger a current limit re-  
sponse and increase MOSFET dissipation. Figure 9 shows  
the response time as a function of the overdrive at SENSE.  
IftheLT4256-3goesintocurrentlimitwhenthevoltageon  
FB is 0V, the current limit circuit drives GATE to force a  
constant 14mV drop across the sense resistor. As the  
output at FB increases, the voltage across the sense  
resistor increases until FB reaches 2V, at which point the  
V
– V  
SENSE  
CC  
12  
10  
8
55mV  
6
4
2
14mV  
4256 F09  
0
50  
100  
150  
(mV)  
200  
0V  
2V  
FB  
4256 F08  
V
– V  
CC  
SENSE  
Figure 9. Response Time to Overcurrent  
Figure 8. Current Limit Sense Voltage vs Feedback Pin Voltage  
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TIMER  
across the sense resistor is held at 55mV as the timer  
ramps up. Once TIMER reaches its shutdown threshold  
(4.65V typically), the circuit latches off.  
TIMERprovidesamethodforprogrammingthemaximum  
time the part is allowed to operate in current limit. When  
the current limit circuitry is not active, TIMER is pulled to  
GND by a 3µA current source. When the current limit  
circuitry becomes active, a 118µA pull-up current source  
isconnectedtoTIMERandthevoltagewillrisewithaslope  
equalto115µA/CTIMER aslongasthecircuitrystaysactive.  
Once the desired maximum current limit time is known,  
the capacitor value is:  
Automatic Restart  
If RETRY is floating, then the device automatically restarts  
after a current overload fault.  
When the voltage at TIMER ramps back down to 0.65V  
(typ), the LT4256-3 turns on again. If the short-circuit  
condition at the output still exists, the cycle will repeat  
itself indefinitely. The duty cycle under short-circuit con-  
ditions is 3% which prevents Q1 from overheating. Fig-  
ure 11 shows representative waveforms during a short  
circuit.  
115µA  
4.65V  
C nF = 25 • t ms ; C =  
[ ]  
• t  
(6)  
[
]
Whenever TIMER reaches 4.65V (typ), the internal fault  
latch is set causing GATE to be pulled low and TIMER to be  
discharged to GND by the 3µA current source. The part is  
not allowed to turn on again until the voltage on TIMER  
falls below 0.65V (typ).  
Latch Off Operation  
If RETRY is grounded, the LT4256-3 will latch off after a  
current fault. After the part latches off, it may be com-  
manded to start back up. This is accomplished by cycling  
UV to ground and then back high (this command can only  
be accepted after TIMER discharges below the 0.65V typ  
threshold, which prevents overheating transistor Q1).  
Whenever GATE is commanded off by any fault condition,  
itisdischargedwithahighcurrent, turningofftheexternal  
MOSFET. The waveform in Figure 10 shows how the  
output latches off following a current fault. The drop  
I
I
OUT  
OUT  
500mA/DIV  
500mA/DIV  
TIMER  
5V/DIV  
TIMER  
5V/DIV  
V
V
OUT  
OUT  
50V/DIV  
50V/DIV  
GATE  
50V/DIV  
GATE  
50V/DIV  
4256 F11  
4256 F10  
10ms/DIV  
10ms/DIV  
Figure 10. Latch Off Waveforms  
Figure 11. RETRY Waveforms  
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Therefore, using RETRY only, the LT4256-3 will either  
latch off after an overcurrent fault condition or it will go  
into a hiccup mode.  
VTHPWRGD  
3.99V  
20kΩ ≤ R8 +R9 200kΩ  
R8 =  
– 1 R9, high to low  
(7)  
(8a)  
(8b)  
Power Good Detection  
R8  
V
THPWRGD = 4.45V 1+  
, low to high  
R9  
The LT4256-3 includes a comparator for monitoring the  
output voltage. The output voltage is sensed through the  
FB pin via an external resistor string. The comparator’s  
output (PWRGD) is an open collector capable of operating  
from a pull-up as high as 80V.  
OPEN Pin/Open FET Detection  
OPEN is an output which signals abnormally low load  
currents. When the voltage across the sense resistor is  
less than 3mV, the open collector pull-down device is shut  
off allowing OPEN to be externally pulled high. OPEN is  
always active when VCC is above 9.8V. If VCC is below 9.8V  
(the internal UVLO threshold), OPEN is pulled low.  
PWRGD can be used to directly enable/disable a power  
module with an active high enable input. Figure 12 shows  
how to use PWRGD to control an active low enable input  
power module. Signal inversion is accomplished by tran-  
sistor Q2 and R10.  
Open-circuit MOSFETs are detected with the LT4256-3 by  
monitoring the voltage across R5 with OPEN while moni-  
toring the output voltage with PWRGD. An open FET  
condition is signalled when OPEN is high and PWRGD is  
low (after the part has completed its start-up cycle).  
The thresholds for the FB pin are 4.45V (low to high) and  
3.99V (high to low). To calculate the PWRGD thresholds,  
use the following equations:  
R5  
Q1  
IRFZ34VS  
V
100mΩ  
OUT  
V
CC  
24V  
24V  
+
D1  
D2  
400mA  
CMPZ5241BS  
11V  
SMAT70A  
C
L
(SHORT PIN)  
16  
15  
V
SENSE  
R1  
CC  
R6  
V
LOGIC  
32.4k  
10Ω  
1
13  
R10  
51k  
UV  
GATE  
LT4256-3  
R7  
100Ω  
C3  
0.01µF  
R2  
4.02k  
C1  
10nF  
12  
V
R8  
14k  
OUT  
FB  
2
PWRGD  
10  
7
OV  
R3  
4.02k  
4
R9  
4.02k  
R4  
27k  
OPEN  
RETRY  
9
5
Q2  
ZN3904  
TIMER  
PWRGD  
C2  
33nF  
GND  
8
UV = 20V  
OV = 40V  
GND  
4256 F12  
PWRGD = 18V  
Figure 12. Active Low Enable PWRGD Application  
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This open FET condition can be falsely signalled during  
start-up if the load is not activated until after PWRGD goes  
high. To avoid this false indication, OPEN and PWRGD  
should not be polled for a period of time, tSTARTUP, given  
by:  
Supply Transient Protection  
The LT4256-3 is 100% tested and guaranteed to be safe  
from damage with supply voltages up to 80V. However,  
voltage transients above 100V may cause permanent  
damage.Duringashort-circuitcondition,thelargechange  
in currents flowing through the power supply traces can  
cause inductive voltage transients which could exceed  
100V. To minimize the voltage transients, the power trace  
parasitic inductance should be minimized by using wider  
traces or heavier trace plating and a bypass capacitor  
should be placed between VCC and GND. A surge suppres-  
sor (TransZorb®) at the input can also prevent damage  
from voltage transients.  
3 • VCC C1  
tSTARTUP  
=
(9)  
30µA  
This can be accomplished either by a microcontroller (if  
available) or by placing an RC filter as shown in Figure 13.  
OncetheOPENvoltageexceedsthemonitoringlogicthresh-  
old, VTHRESH, and PWRGD is low, an open FET condition  
is signalled. In order to prevent a false indication, the RC  
product should be set with the following equation:  
GATE Pin  
A curve of gate drive vs VCC is shown in Figure 14. GATE  
3 • VCC C1  
RC >  
is clamped to a maximum voltage of 12.8V above VOUT  
.
VLOGIC  
(10)  
This clamp is designed to withstand the internal charge  
pump current. An external Zener diode must be used as  
shown in all applications. At a minimum input supply  
voltage of 10.8V, the minimum gate drive voltage is 4.5V.  
When the input supply voltage is higher than 20V, the gate  
drive voltage is at least 10V and a standard threshold  
MOSFET can be used. In applications from 12V to 15V  
range, a logic level MOSFET must be used.  
30µA ln  
VLOGIC – VTHRESH  
Another condition that can cause a false indication is if the  
LT4256-3 goes into current limit during start-up. This will  
cause tSTARTUP to be longer than calculated. Also, if the  
LT4256-3 stays in current limit long enough for TIMER to  
fully charge up to its threshold, the LT4256-3 will either  
latch off (RETRY = 0) or go into the current limit hiccup  
mode (RETRY = floating). In either case, an open FET  
condition will be falsely signalled. If the LT4256-3 does go  
intocurrentlimitduringstart-up, C1canbeincreased(see  
Power-Up Sequence).  
TransZorb is a registered trademark of General Instruments, GSI.  
13  
12  
11  
10  
9
8
V
LOGIC  
R
7
6
LT4256-3  
TO  
5
OPEN  
MONITORING  
LOGIC  
4
4
C
INTERNAL  
OPEN COLLECTOR  
PULL-DOWN  
3
10  
30  
40  
50  
60  
70  
80  
20  
4256 F13  
V
CC  
(V)  
4256 F14  
Figure 13. Delay Circuit for OPEN FET Detection  
Figure 14. VGATE vs VCC  
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In some applications it may be possible for VOUT to ring  
below ground (due to the parasitic trace inductance).  
Higher current applications, especially where the output  
load is physically far away from the LT4256-3 will be more  
susceptible to these transients. This is normal and the  
LT4256-3 has been designed to allow for some ringing  
below ground. However, if the application is such that  
LT4256-3 becomes active and pulls down on GATE). This  
is due to the MOSFET intrinsic drain to gate capacitance  
forcing current into R7 and C1 when the drain voltage  
steps up from ground to VCC with an extremely fast rise  
time. To alleviate this situation, a diode, D3, should be put  
across R7 with the cathode connected to C1 as shown in  
Figure 16.  
V
OUT can ring more than 3V below ground, damage may  
WhenevertheLT4256-3turnstheMOSFEToff,GATEpulls  
theMOSFETgatetogroundwithanopencollectorcapable  
of sinking 62mA. If the output is held up by a large  
reservoir capacitor, the stored energy is dissipated in the  
pull-down transistor via a sneak path through the (now  
forward biased) Zener, D1. The LT4256-3 has a propri-  
etary feature that reduces on-chip power dissipation by  
sensing when the MOSFET is off and reducing the pull-  
down current significantly. See VGATE Turn-Off for more  
information about using this feature.  
occur to the LT4256-3 and an external diode, D2, from  
ground (anode) to VOUT (cathode) will have to be added to  
the circuit as shown in Figure 15 (it is critical that the  
reverse breakdown voltage of the diode be higher than the  
highest expected VCC voltage). A capacitor placed from  
ground to VOUT directly at the LT4256-3 pins can help  
reduce the amount of ringing on VOUT but it may not be  
enough for some applications.  
During a fault condition, the LT4256-3 pulls down on  
GATE with a switch capable of sinking about 62mA. Once  
GATE drops below the output voltage by a diode forward  
voltage, the external Zener will forward bias and VOUT will  
also be discharged to GND. In addition to the GATE  
capacitance, the output capacitance will be discharged  
through the LT4256-3.  
VGATE Turn-Off  
The LT4256-3 has a proprietary feature that reduces  
power dissipation by sensing when the MOSFET is off and  
reducing the pull-down current significantly. As the GATE  
pin is discharged during any fault, the LT4256-3 monitors  
theGATEpinandVOUT pin. WhentheGATEpinis2Vbelow  
VOUT, the pull-down current is reduced from 62mA to  
about 130µA.  
In applications utilizing very large external N-channel  
MOSFETs, the possibility exists for the MOSFET to turn on  
when initially inserted into a live backplane (before the  
R5  
0.010Ω  
Q1  
IRF540  
V
OUT  
48V  
4A  
V
CC  
48V  
D1  
+
D2  
SMAT70A  
CMPZ5241BS  
11V  
C
L
(SHORT PIN)  
16  
15  
V
SENSE  
R1  
CC  
R6  
R8  
64.9k  
10Ω  
36.5k  
1
13  
D3  
MRA4003T3  
UV  
GATE  
LT4256-3  
R7  
100Ω  
C3  
0.01µF  
R2  
4.02k  
C1  
10nF  
12  
10  
7
V
OUT  
2
FB  
OV  
R9  
4.02k  
R4  
51k  
R3  
4.02k  
4
OPEN  
RETRY  
9
5
TIMER  
PWRGD  
4256 F14  
C2  
33nF  
GND  
GND  
UV = 36V  
OV = 73V  
8
PWRGD = 40V  
Figure 15. Negative Output Voltage Protection Diode Application  
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In order to use this feature as designed, a bidirectional  
Zener diode is needed for D1. When the LT4256-3 com-  
mands the MOSFET off (and a bidirectional Zener is used),  
the output discharges very slowly (tOFF = (CLOAD • VOUT)/  
130µA). Several variations can be implemented to dis-  
charge the output faster. The recommeded method is  
shown in Figure 17 and uses an external PNP transistor,  
diode and resistor to discharge the output quickly.  
The equation to set the nominal discharge current is:  
5000  
IDISCHG  
=
130µA  
(
)
(11)  
(12)  
RPROG  
where RPROG must be less than 1k.  
The maximum current equation is:  
7000  
IMAX  
=
350µA  
(
)
RPROG  
Q1  
IRF530  
R5  
V
0.033Ω  
OUT  
V
CC  
48V  
48V  
+
D2  
SMAT70A  
D1  
1.2A  
C
CMPZ5241BS  
11V  
L
(SHORT PIN)  
16  
15  
V
SENSE  
R1  
CC  
R6  
10Ω  
R8  
64.9k  
36.5k  
1
2
13  
UV  
OV  
GATE  
C3  
0.1µF  
D3  
1N4148W  
R7  
100Ω  
R2  
4.02k  
LT4256-3  
C1  
10nF  
12  
10  
V
OUT  
R3  
4.02k  
FB  
R9  
4.02k  
R4  
27k  
4
9
7
5
OPEN  
RETRY  
TIMER  
PWRGD  
4256 F16  
C2  
33nF  
GND  
8
UV = 36V  
OV = 73V  
PWRGD = 40V  
GND  
Figure 16. High dV/dt MOSFET Turn-On Protection Circuit  
R5  
0.010Ω  
Q1  
IRF540  
V
OUT  
48V  
4A  
V
CC  
48V  
D1  
+
D2  
CMPZ5241BS  
11V  
R
PROG  
SMAT70A  
C
L
(SHORT PIN)  
16  
15  
SENSE  
R
18k  
B
D3  
1N4148  
R1  
V
R6  
CC  
64.9k  
1k  
Q2  
2N4920  
1
13  
UV  
GATE  
LT4256-3  
R7  
100Ω  
C3  
0.01µF  
R2  
4.02k  
C1  
10nF  
12  
10  
2
OV  
V
OUT  
R3  
R8  
36.5k  
4.02k  
FB  
R9  
R4  
51k  
4
7
5
4.02k  
OPEN  
RETRY  
9
TIMER  
PWRGD  
4256 F17  
C2  
33nF  
GND  
8
GND  
UV = 36V  
OV = 73V  
PWRGD = 40V  
Figure 17. Enhanced Output Pull-Down Circuit  
42563f  
17  
LT4256-3  
U
W U U  
APPLICATIO S I FOR ATIO  
Layout Considerations  
immunity will be improved significantly by locating resis-  
tor dividers close to the pins with short VCC and GND  
traces. The minimum trace width for 1oz copper foil is  
0.02" per amp to make sure the trace stays at a reasonable  
temperature. 0.03" per amp or wider is recommended.  
Figure 18 shows a layout that meets these requirements.  
To achieve accurate current sensing, a Kelvin connection  
to the current sense resistor (R5 in typical application  
circuit) is recommended. Note that 1oz copper exhibits a  
sheetresistanceofabout530µΩ/  
cause large errors in high current applications. Noise  
o
. Smallresistancescan  
D1  
Q1  
V
IN  
R6  
R5  
R1  
R3  
D2  
V
OUT  
R7  
R8  
R2  
LT4256-3  
R9  
C1  
GND  
42563 F18  
Figure 18. Recommended Component Placement  
42563f  
18  
LT4256-3  
U
PACKAGE DESCRIPTIO  
GN Package  
16-Lead Plastic SSOP (Narrow .150 Inch)  
(Reference LTC DWG # 05-08-1641)  
.189 – .196*  
(4.801 – 4.978)  
.045 ±.005  
.009  
(0.229)  
REF  
16 15 14 13 12 11 10 9  
.254 MIN  
.150 – .165  
.229 – .244  
.150 – .157**  
(5.817 – 6.198)  
(3.810 – 3.988)  
.0165 ±.0015  
.0250 BSC  
RECOMMENDED SOLDER PAD LAYOUT  
1
2
3
4
5
6
7
8
.015 ± .004  
(0.38 ± 0.10)  
× 45°  
.0532 – .0688  
(1.35 – 1.75)  
.004 – .0098  
(0.102 – 0.249)  
.007 – .0098  
(0.178 – 0.249)  
0° – 8° TYP  
.016 – .050  
(0.406 – 1.270)  
.0250  
(0.635)  
BSC  
.008 – .012  
GN16 (SSOP) 0204  
(0.203 – 0.305)  
TYP  
NOTE:  
1. CONTROLLING DIMENSION: INCHES  
INCHES  
2. DIMENSIONS ARE IN  
(MILLIMETERS)  
3. DRAWING NOT TO SCALE  
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH  
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE  
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD  
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE  
42563f  
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.  
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-  
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.  
19  
LT4256-3  
U
W U U  
APPLICATIO S I FOR ATIO  
Dual 48V Supply Sequencing Application  
R5  
0.020  
Q2  
IRF540  
V
OUT2  
48V  
2A  
+
D3  
C
L2  
CMPZ5241BS  
11V  
R1  
C1  
V
SENSE  
R8  
R4  
CC  
64.9k  
R6  
10Ω  
R7  
100Ω  
10nF  
36.5k  
51k  
UV  
OV  
GATE  
LT4256-3  
C3  
0.01µF  
R9  
4.02k  
V
R2  
4.02k  
OUT  
FB  
V
IN  
50V/DIV  
R3  
4.02k  
PWRGD2  
OPEN  
PWRGD  
RETRY  
UV = 36V  
OV = 73V  
PWRGD = 40V  
TIMER  
GND  
33nF  
V
OUT1  
50V/DIV  
R5  
0.020Ω  
Q1  
IRF540  
V
48V  
2A  
OUT1  
V
IN  
48V  
PWRGD1  
50V/DIV  
+
D2  
SMAT70A  
D1  
C
L1  
CMPZ5241BS  
(SHORT PIN)  
11V  
V
SENSE  
C1  
R1  
R8  
R4  
CC  
R7  
100Ω  
R6  
10Ω  
V
10nF  
64.9k  
OUT2  
36.5k  
51k  
50V/DIV  
UV  
OV  
GATE  
LT4256-3  
4256 TA04  
5ms/DIV  
C3  
0.01µF  
R9  
4.02k  
V
R2  
4.02k  
OUT  
FB  
R3  
4.02k  
PWRGD1  
OPEN  
PWRGD  
RETRY  
4256 TA03  
UV = 36V  
OV = 73V  
PWRGD = 40V  
TIMER  
C2  
33nF  
GND  
GND  
RELATED PARTS  
PART NUMBER  
LT1641-1/LT1641-2  
LTC4211  
DESCRIPTION  
Positive 48V Hot Swap Controller in SO-8  
Single Hot Swap Controller with Multifunction Current Control 2.5V to 16.5V, Active Inrush Limiting, Dual Level Cicuit Breaker  
COMMENTS  
9V to 80V Operation, Active Current Limit, Autoretry/Latchoff  
LTC4251  
48V Hot Swap Controller in SOT-23  
Floating Supply from –15V, Active Current Limiting,  
Fast Circuit Breaker  
LTC4252-1/LTC4252-2 48V Hot Swap Controller in MSOP  
Floating Supply from –15V, Active Current Limiting,  
Power Good Output  
LTC4253  
48V Hot Swap Controller and Supply Sequencer  
Floating Supply from –15V, Active Current Limiting,  
Enables Three DC/DC Converters  
LT4254  
Positive High Voltage Hot Swap Controller  
Positive High Voltage Hot Swap Controller  
10.8V to 36V Operation, Open-Circuit Detection  
LT4256-1/LT4256-2  
10.8V to 80V Operation, Active Current Limit, Autoretry/Latchoff  
42563f  
LT/TP 0304 1K • PRINTED IN USA  
20 LinearTechnology Corporation  
1630 McCarthy Blvd., Milpitas, CA 95035-7417  
(408) 432-1900 FAX: (408) 434-0507 www.linear.com  
LINEAR TECHNOLOGY CORPORATION 2004  

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