LT5511EFE#TR [Linear]
LT5511 - High Signal Level Upconverting Mixer; Package: TSSOP; Pins: 16; Temperature Range: -40°C to 85°C;
| 型号： | LT5511EFE#TR |
| 厂家： | 
Linear |
| 描述： | LT5511 - High Signal Level Upconverting Mixer; Package: TSSOP; Pins: 16; Temperature Range: -40°C to 85°C |
| 文件： | 总16页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT5511
High Signal Level
Upconverting Mixer
U
FEATURES
DESCRIPTIO
The LT®5511 mixer is designed to meet the high linearity
requirementsofcableTVinfrastructuredownstreamtrans-
mitters and wireless infrastructure transmit systems. The
IC includes a differential LO buffer amplifier driving a
double-balanced mixer. The LO, RF and IF ports can be
easily matched to a broad range of frequencies for differ-
ent applications. The high performance capability of the
LO buffer allows the use of a single-ended source, thus
eliminating the need for an LO balun.
■
Wide RF Output Frequency Range to 3000MHz
■
Broadband RF and IF Operation
■
+17dBm Typical Input IP3 (at 950MHz)
■
+6dBm IF Input for 1dB RF Output Compression
■
Integrated LO Buffer: –10dBm Drive Level
■
Single-Ended or Differential LO Input
■
Double-Balanced Mixer
Enable Function
■
■
Single 4.0V – 5.25V Supply Voltage Range
16-Pin TSSOP Exposed Pad Package
■
The LT5511 mixer delivers +17dBm typical input 3rd
order intercept point at 950MHz, and +15.5dBm IIP3 at
1900MHz, with IF input signal levels of – 5dBm. The input
1dB compression point is typically +6dBm.
U
APPLICATIO S
■
CATV Downlink Infrastructure
, LTC and LT are registered trademarks of Linear Technology Corporation.
■
Wireless Infrastructure
■
High Linearity Mixer Applications
U
TYPICAL APPLICATIO
V
CC
ENABLE
5V
RF Output Power
LT5511
EN
and 3rd Order Intermodulation
vs Input Power (Two Input Tones)
V
CC
BIAS
V
LO
+
CC
BIAS
10
0
950MHz
44MHz
+
IF
IF
RF
TO
P
OUT
DOWNMIXER
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
MOD
–
–
RF
IM3
GND
P
= –10dBm
= 950MHz
= 949MHz
LO
RF1
RF2
f
+
–
f
LO
LO
T
= 25°C
A
5511 F01a
–20
–15
–10
–5
0
5
LO INPUT
994MHz
–10dBm
IF INPUT POWER (dBm/TONE)
5511 F01b
Figure 1. High Signal Level Upmixer for CATV Downlink Infrastructure.
5511i
1
LT5511
W W U W
U
W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
TOP VIEW
ORDER PART
Supply Voltage ....................................................... 5.5V
Enable Voltage ................................ –0.3V to VCC + 0.3V
LO Input Power (Differential).............................. 10dBm
IF Input Power (Differential) ............................... 10dBm
IF+, IF– DC Currents .............................................. 25mA
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range ..................–65°C to 150°C
Lead Temperature (Soldering, 10sec)................... 300°C
–
+
LO
1
2
3
4
5
6
7
8
16
15
14
13
12
LO
V
NUMBER
NC
LO
CC
LT5511EFE
GND
+
GND
+
IF
RF
–
–
IF
RF
GND
BIAS
GND
11 GND
V
10
9
EN
NC
CC
FE PART MARKING
5511EFE
FE PACKAGE
16-LEAD PLASTIC TSSOP
TJMAX = 150°C, θJA = 38°C/W
EXPOSED PAD IS GROUND
(MUST BE SOLDERED TO
PRINTED CIRCUIT BOARD)
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
= 5V , EN = High, T = 25°C
DC A
CC
IF Input Frequency Range (Note 6)
LO Input Frequency Range (Note 6)
RF Output Frequency Range (Note 6)
1 to 300
30 to 2700
10 to 3000
MHz
MHz
MHz
950MHz Application: (Test Circuit Shown in Figure 2) V = 5V , EN = High, T = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1GHz at –10dBm,
CC
DC
A
RF Output Measured at 950MHz, unless otherwise noted. (Notes 2, 3)
IF Input Return Loss
LO Input Power
With External Matching, Z = 50Ω
14
–15 to –5
14
dB
dBm
dB
O
LO Input Return Loss
RF Output Return Loss
Conversion Gain
With External Matching, Z = 50Ω
O
With External Matching, Z = 50Ω
17
dB
O
0
dB
LO to RF Leakage
–46
5.9
dBm
dBm
dBm
dBm
dB
Input 1dB Compression
Input 3rd Order Intercept
Input 2nd Order Intercept
SSB Noise Figure
Two-Tone, –5dBm/Tone, ∆f = 1MHz
17
Single-Tone, –5dBm
52
15
5511f
2
LT5511
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
1.9GHz Application: (Test Circuit Shown in Figure 3) V = 5V , EN = High, T = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1.95GHz at –10dBm,
CC
DC
A
RF Output Measured at 1900MHz, unless otherwise noted. (Notes 3, 4)
IF Input Return Loss
LO Input Power
With External Matching, Z = 50Ω
14
–15 to –5
11.5
11.5
–0.7
–47
dB
dBm
dB
O
LO Input Return Loss
RF Output Return Loss
Conversion Gain
With External Matching, Z = 50Ω
O
With External Matching, Z = 50Ω
dB
O
dB
LO to RF Leakage
dBm
dBm
dBm
dBm
dB
Input 1dB Compression
Input 3rd Order Intercept
Input 2nd Order Intercept
SSB Noise Figure
5.2
Two-Tone, –5dBm/Tone, ∆f = 1MHz
15.5
51
Single-Tone, –5dBm
14
Power Supply Requirements: V = 5V , EN = High, T = 25°C, unless otherwise noted.
CC
DC
A
Supply Voltage
Supply Current
4.0 to 5.25
V
DC
56
1
65
30
mA
Shutdown Current (Chip Disabled)
Enable Mode Threshold
Disable Mode Threshold
Turn ON Time (Note 5)
Turn OFF Time (Note 5)
Enable Input Current
EN = Low
EN = High
EN = Low
µA
3
V
DC
0.5
V
DC
2
6
1
µs
µs
EN = 5V
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 4: External components on the final test circuit are optimized for
operation at f = 1900MHz, f = 1.95GHz and f = 50MHz (Figure 3).
RF
LO
IF
Note 2: External components on the final test circuit are optimized for
Note 5: Turn On and Turn Off times are based on rise and fall times of RF
output envelope from full power to –40dBm with an IF input power of
–5dBm.
Note 6: Part can be used over a broader range of operating frequencies.
Consult factory for applications assistance.
operation at f = 950MHz, f = 1GHz and f = 50MHz (Figure 2).
RF
LO
IF
Note 3: Specifications over the – 40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
5511i
3
LT5511
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(950MHz Application)
VCC = 5VDC, EN = High , TA = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1GHz at –10dBm, RF Output Measured at 950MHz, unless
otherwise noted. For 2-Tone Measurements: 2nd IF Input = 51MHz at –5dBm. (Test Circuit Shown in Figure 2).
RF Output Power and 3rd Order
Intermodulation vs IF Input Power
(Two Input Tones)
RF Output Power and 2nd Order
Intermodulation vs IF Input Power
(Single Input Tone)
Conversion Gain vs IF Input
Power (Single Input Tone)
10
0
10
0
5
4
P
OUT
T
= –40°C
T
= 25°C
A
A
T
A
= 25°C
T
= –40°C
A
3
T
A
= 85°C
–10
–20
–30
–40
–50
–60
–70
–80
–10
–20
–30
–40
–50
–60
–70
–80
T = 85°C
A
IM3
P
OUT
2
T
= –40°C
A
T
= 25°C
A
1
0
T = 25°C
A
T
= 85°C
A
–1
–2
–3
–4
–5
T
A
= 85°C
T
= 85°C
T
A
= –40°C
A
T
= –40°C
A
T
= 25°C
A
IM2
–15
5
–10
–5
0
–15
5
–10
–5
0
–15
–10
–5
0
5
IF INPUT POWER (dBm/TONE)
IF INPUT POWER (dBm)
IF INPUT POWER (dBm)
5511 G02
5511 G01
5511 G03
Conversion Gain and IIP3
vs LO Power
IIP2 vs LO Power
LO to RF Leakage vs LO Power
–5
–15
–25
–35
–45
–55
60
50
40
30
20
10
0
8
6
19
IIP3
T
= –40°C
A
T
A
= 25°C
17
15
13
11
9
T
= 25°C
A
T
A
= –40°C
T
A
= 85°C
T
= 85°C
A
4
2
GAIN
T
= 85°C
T
A
= –40°C
A
T
A
= 25°C
T
= –40°C
A
0
T
A
= 85°C
T
= 25°C
A
–2
–15
–10
LO POWER (dBm)
–5
–20
–15
–10
LO POWER (dBm)
–5
–20
–15
–10
LO POWER (dBm)
–5
0
–20
0
0
5511 G06
5511 G04
5511 G05
Conversion Gain and LO to RF
Leakage vs Output Frequency
SSB Noise Figure vs
Output Frequency
IIP3 and IIP2
vs Output Frequency
IIP2
60
50
40
30
20
10
0
2
0
–5
20
18
16
14
12
10
T
= –40°C
T
= 25°C
A
A
T
= 85°C
A
–15
–25
–35
–45
–55
–65
GAIN
T = 25°C
A
T
= –40°C
A
T
= 85°C
–2
–4
–6
–8
–10
A
T
= 25°C
A
T
= 85°C
A
T
= –40°C
A
IIP3
T
= 85°C
A
T
= 25°C
A
T
= –40°C
LO LEAKAGE
A
T
= 25°C
A
IF = 50MHz, LO SWEPT FROM
400MHz TO 1300MHz AT –10dBm
IF = 50MHz, LO SWEPT FROM
400MHz TO 1300MHz AT –10dBm
IF = 50MHz, LO SWEPT FROM
400MHz TO 1300MHz AT –10dBm
300
500
700
900
1100
1300
300 500 700 900
1100
1300
300 500 700 900
1100
1300
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
5511 G08
5511 G07
5511 G09
5511f
4
LT5511
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(950MHz Application)
VCC = 5VDC, EN = High , TA = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1GHz at –10dBm, RF Output Measured at 950MHz, unless
otherwise noted. For 2-Tone Measurements: 2nd IF Input = 51MHz at –5dBm. (Test Circuit Shown in Figure 2).
LO and RF Port Return Loss
vs Frequency
Conversion Gain
vs Supply Voltage
IIP3 and IIP2
vs Supply Voltage
6
4
35
30
25
20
15
10
60
50
40
30
20
10
0
–10
–20
–30
–40
–50
T
= 25°C
IIP2
A
T
= –40°C
A
RF PORT
LO PORT
T
= 85°C
A
2
T
= –40°C
A
T
= 25°C
A
0
T
= 85°C
T
= 85°C
A
A
T
= 25°C
IIP3
A
T
A
= –40°C
–2
–4
4.8
4.0 4.2 4.4 4.6
SUPPLY VOLTAGE (V)
5.0 5.2 5.4 5.6
4.8
4.0 4.2 4.4 4.6
SUPPLY VOLTAGE (V)
5.0 5.2 5.4 5.6
900
700
FREQUENCY(MHz)
300
500
1100
1300
5511 G11
5511 G12
5511 G10
(1.9GHz Application)
VCC = 5VDC, EN = High , TA = 25°C, IF Input = 50MHz at –5dBm, LO Input = 1.95GHz at –10dBm, RF Output Measured at 1900MHz,
unless otherwise noted. For 2-Tone Measurements: 2nd IF Input = 51MHz at –5dBm. (Test Circuit Shown in Figure 3).
RF Output Power and 3rd Order
Intermodulation vs IF Input
Power (Two Input Tones)
RF Output Power and 2nd Order
Intermodulation vs IF Input Power
(Single Input Tone)
Conversion Gain vs IF Input
Power (Single Input Tone)
10
0
10
0
5
4
P
OUT
P
OUT
T
A
= –40°C
T
A
= –40°C
T = 25°C
A
T
= 25°C
A
3
–10
–20
–30
–40
–50
–60
–70
–80
–10
–20
–30
–40
–50
–60
–70
–80
IM3
T
= 85°C
T
= 85°C
A
A
2
T
= –40°C
A
1
T
= –40°C
0
A
IM2
T
A
= 25°C
–1
–2
–3
–4
–5
T
A
= 25°C
T
A
= 85°C
T
= –40°C
A
T
= 85°C
A
T
= 85°C
A
T
= 25°C
A
–15
–10
–5
0
5
–15
5
–15
5
–10
–5
0
–10
–5
0
IF INPUT POWER (dBm)
IF INPUT POWER (dBm/TONE)
IF INPUT POWER (dBm)
5511 G15
5511 G14
5511 G13
5511i
5
LT5511
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(1.9GHz Application)
VCC = 5VDC, EN = High , TA = 25 ºC, IF Input = 50MHz at –5dBm, LO Input = 1.95GHz at –10dBm. RF Output Measured at 1900MHz,
unless otherwise noted. For 2-Tone Measurements: 2nd IF Input = 51MHz at –5dBm. (Test Circuit Shown in Figure 3).
Conversion Gain and IIP3
vs LO Input Power
LO to RF Leakage
vs LO Input Power
IIP2 vs LO Input Power
6
4
17
15
13
11
9
5
–5
60
50
40
30
20
10
0
IIP3
T
= 85°C
A
T
= 25°C
A
T
= 25°C
A
T
= –40°C
A
–15
–25
–35
–45
–55
T
= –40°C
A
T
= 85°C
A
2
GAIN
T
= –40°C
A
T
= –40°C
A
T
0
T
= 85°C
A
T
= 25°C
A
–2
–4
T
= 85°C
A
= 25°C
A
7
–15
–10
LO INPUT POWER (dBm)
–5
–25
–20
0
–25
–20
–15
–10
–5
0
–25
–20
–15
–10
–5
0
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5511 G18
5511 G16
5511 G17
SSB Noise Figure
vs Output Frequency
Conversion Gain and LO to RF
Leakage vs RF Output Frequency
IIP3 and IIP2 vs Output Frequency
60
50
40
30
20
10
0
2
0
–5
20
18
16
14
12
10
IIP2
T
T
= 25°C
A
T
= 25°C
A
T
= –40°C
= 85°C
A
A
GAIN
–15
–25
–35
–45
–55
T
A
= 25°C
= 85°C
T
= –40°C
A
T
A
–2
–4
–6
–8
IIP3
T
= 25°C
A
T
A
= 25°C
LO LEAKAGE
T
= 85°C
A
T
A
= 85°C
T
= –40°C
T = –40°C
A
A
IF = 50MHz, LO SWEPT
FROM 1600MHz TO 2350MHz
IF = 50MHz, LO SWEPT
FROM 1600MHz TO 2350MHz
IF = 50MHz, LO SWEPT
FROM 1600MHz TO 2350MHz
1500 1700 1900
2100
2300
1500
1700 1900
2100
2300
1500
1700
1900
2100
2300
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
5511 G20
5511 G19
5511 G21
LO and RF Port Return Loss
vs Frequency
Conversion Gain
vs Supply Voltage
IIP3 and IIP2 vs Supply Voltage
30
25
20
15
10
5
60
50
40
30
20
10
0
4
2
T
= –40°C
A
IIP2
T
= 25°C
A
–5
–10
–15
–20
–25
–30
LO PORT
T = 85°C
A
T
A
= –40°C
0
T
= 25°C
A
IIP3
RF PORT
T
= 85°C
A
T
A
= 85°C
T
= 25°C
A
–2
–4
–6
T
= –40°C
A
4.8
SUPPLY VOLTAGE (V)
5.0 5.2 5.4 5.6
4.0 4.2 4.4 4.6
2100
FREQUENCY(MHz)
1500
1700
1900
2300
4.8
4.0 4.2 4.4 4.6
SUPPLY VOLTAGE (V)
5.0 5.2 5.4 5.6
5511 G24
5511 G22
5511 G23
5511f
6
LT5511
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Table 1. Typical S-Parameters for the IF, RF and LO Ports (referenced to 50Ω). VCC = 5VDC, EN = High , TA = 25ºC.
For each Port Measurement, the other Ports are Terminated as Shown in Figure 2.
Frequency
(MHz)
10
Differential IF Port
Differential RF Port
Differential LO Port
Single LO Port
Mag.
0.65
Ang.
Mag.
–
Ang.
Mag.
–
Ang.
Mag.
–
Ang.
–
179.2
176.2
173.3
170.6
168.5
166.7
165.0
164.1
162.7
162.2
161.3
160.6
160.0
160.6
167.8
162.3
150.0
141.4
137.2
135.1
135.6
136.5
136.9
135.3
131.0
124.4
116.1
108.1
110.2
127.5
121.5
122.0
126.7
132.0
138.9
142.4
–
–
50
0.648
0.645
0.627
0.626
0.619
0.617
0.609
0.597
0.586
0.567
0.527
0.484
0.438
0.451
0.554
0.581
0.574
0.567
0.557
0.540
0.520
0.495
0.462
0.432
0.405
0.390
0.366
0.310
0.417
0.489
0.491
0.472
0.445
0.412
0.375
0.644
0.643
0.642
0.642
0.639
0.635
0.632
0.629
0.626
0.623
0.622
0.620
0.617
0.615
0.613
0.611
0.607
0.602
0.594
0.585
0.576
0.567
0.557
0.548
0.540
0.529
0.521
0.513
0.503
0.495
0.486
0.479
0.472
0.468
0.463
–0.8
0.814
0.836
0.804
0.823
0.803
0.815
0.806
0.804
0.805
0.798
0.797
0.799
0.804
0.808
0.814
0.817
0.813
0.811
0.805
0.795
0.790
0.789
0.791
0.793
0.795
0.796
0.796
0.790
0.782
0.765
0.748
0.731
0.721
0.720
0.722
–0.6
0.788
0.808
0.780
0.789
0.779
0.773
0.777
0.760
0.776
0.749
0.746
0.750
0.753
0.756
0.763
0.765
0.755
0.751
0.743
0.731
0.727
0.726
0.728
0.728
0.728
0.724
0.718
0.703
0.687
0.668
0.656
0.652
0.663
0.680
0.701
–1.0
100
–2.0
–0.8
–1.5
150
–3.0
–1.0
–2.1
200
–4.0
–1.6
–3.0
250
–5.0
–1.8
–3.7
300
–6.1
–2.5
–4.7
350
–7.2
–2.9
–5.9
400
–8.3
–3.8
–7.2
450
–9.5
–4.4
–8.9
500
–10.7
–13.0
–15.4
–18.0
–20.3
–22.4
–24.6
–26.6
–28.6
–30.7
–32.9
–35.3
–37.8
–40.7
–43.8
–47.0
–50.2
–53.9
–57.4
–61.4
–65.3
–69.0
–73.2
–76.8
–80.4
–83.1
–5.2
–10.0
–12.9
–15.7
–18.0
–19.5
–20.5
–21.6
–22.7
–24.7
–27.7
–31.2
–35.3
–39.3
–42.6
–45.0
–46.7
–48.0
–49.8
–52.4
–56.5
–62.7
–70.5
–78.7
–85.9
–91.2
–94.2
600
–6.6
700
–7.8
800
–8.9
900
–9.6
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
–10.2
–10.7
–11.2
–12.2
–13.7
–15.6
–18.0
–20.6
–22.9
–24.8
–26.2
–27.3
–28.4
–29.8
–31.8
–34.8
–38.8
–43.3
–48.3
–52.5
–55.9
5511i
7
LT5511
U
U
U
PI FU CTIO S
LO–, LO+ (Pins 1, 16): Differential Inputs for the Local
Oscillator Signal. They can also be driven single-ended by
connecting one to an RF ground through a DC blocking
capacitor. For single-ended drive, use LO+ for the signal
input, as this results in less interference from unwanted
coupling of the LO signal to other pins. These pins are
internally biased to about 1.4V; thus, DC blocking capaci-
tors are required. An impedance transformation is re-
quired to match the LO input to 50Ω (or 75Ω). At frequen-
cies below 1.5GHz this input can be resistively matched
with a shunt resistor.
VCCBIAS(Pin7):SupplyVoltagefortheLOBufferBiasand
Enable Circuits. This pin should be connected to VCC and
have appropriate RF bypass capacitors. Care should be
taken to ensure that RF signal leakage to the VCC line is
minimized.
EN (Pin 10): Chip Enable/Disable. When the applied volt-
age is greater than 3V, the IC is enabled. When the applied
voltage is less than 0.5V, the IC is disabled and the DC
current drops to about 1µA. Under no conditions should
the voltage on this pin exceed VCC + 0.3V, even at power
on.
RF–, RF+ (Pins 12, 13): Differential Outputs for the RF
Output Signal. An impedance transformation may be
required to match the outputs. These pins are also used to
connect the mixer to the DC supply through impedance-
matchinginductors, RFchokesortransformercenter-tap.
Care should be taken to ensure that the RF signal leakage
to VCCLO and VCCBIAS is minimized.
NC (Pins 2, 9): Not Connected Internally. Connect to
ground for improved isolation between pins.
GND (Pins 3, 6, 8,11, 14): Internal Grounds. These pins
are used to improve isolation and are not intended as DC
or RF grounds for the IC. Connect these pins to ground for
best performance.
IF+, IF– (Pins 4, 5): Differential Inputs for the IF Signal. A
differential signal must be applied to these pins. These
pins are internally biased to about 1.2V, and thus require
DC blocking capacitors. These pins should be DC isolated
from each other for best LO suppression. Imbalances in
amplitude or phase between these two signals will de-
grade the linearity of the mixer.
VCCLO (Pin 15): Supply Voltage for the LO Buffer Ampli-
fier. This pin should be connected to VCC and have appro-
priate RF bypass capacitors. Care should be taken to
ensure that RF signal leakage to the VCC line is minimized.
GROUND(BacksideContact)(Pin17):DCandRFGround
Return for the Entire IC. This contact must be connected
to a low impedance ground plane for proper operation.
W
BLOCK DIAGRA
–
+
LO
LO
1
16
NC
2
3
4
15
V
LO
CC
GND
14 GND
LO
BUFFER
+
+
IF
13 RF
–
–
IF
5
6
7
12 RF
BIAS
CIRCUITS
GND
BIAS
11 GND
V
EN
10
CC
8
17
9
GND
GND
(BACKSIDE)
NC
5511 BD
5511f
8
LT5511
TEST CIRCUIT
LO
R1
V
V
CC
CC
C1
C4
C5
C7
LT5511
1
2
3
4
5
6
7
8
16
+
–
LO
LO
15
14
13
12
11
10
9
NC
V
LO
CC
IF
T1
T2
3
1
4
GND
GND
L1
3
2
1
4
5
R2
C11
C8
C10
C13
C12
+
+
1x
C15
4x
IF
RF
5
C9
RF
–
–
IF
RF
4x
1x
R3
GND
GND
EN
L2
C14
R5
V
V
BIAS
EN
CC
CC
C17
GND
NC
EXPOSED
PAD GND
5511F02
Component
Value
22pF
Comments
0402
C1, C9, C11, C15
C5, C7, C17
100pF
0.1µF
220pF
1000pF
1.5pF
6.8nH
62Ω
0402
C4
0402
C8
0402
C10, C12, C13
0402
C14
L1, L2
R1
0402
0402
0402
R2, R3
R5
75Ω, 0.1%
10kΩ
4:1
0603
0402
T1
Coilcraft TTWB-4-A
M/A-Com ETC1.6-4-2-3
T2
4:1
Figure 2. Test Circuit and Evaluation Board Schematic for 950MHz Application.
5511i
9
LT5511
TEST CIRCUIT
LO
C1
V
V
CC
CC
C2
+
L3
C5
C4
C7
LT5511
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
–
LO
LO
NC
V LO
CC
IF
T1
T2
3
1
4
GND
GND
L1
3
2
1
4
5
R2
C11
C8
C10
C13
C12
+
+
1x
C15
L4
4x
IF
RF
5
C9
–
–
RF
IF
RF
4x
1x
R3
GND
GND
EN
L2
R5
V
CC
V
BIAS
EN
CC
C17
GND
NC
5511 F03
EXPOSED
PAD GND
Component
Value
22pF
Comments
0402
0402
0402
0402
0402
0402
0402
0402
0402
0603
0402
C1, C9, C11, C15
C5, C7, C17
100pF
0.1µF
220pF
1000pF
1.2pF
6.8nH
4.7nH
1.8nH
75Ω, 0.1%
10kΩ
4:1
C4
C8
C10, C12, C13
C2
L3
L1, L2
L4
R2, R3
R5
T1
Coilcraft TTWB-4-A
M/A-Com ETC1.6-4-2-3
T2
4:1
Figure 3. Test Circuit and Evaluation Board Schematic for 1.9GHz Application.
5511f
10
LT5511
U
W U U
APPLICATIO S I FOR ATIO
TheLT5511consistsofadouble-balancedmixerdrivenby
a high-performance, differential, limiting LO buffer. The
mixer has been optimized for high linearity and high signal
level operation. The LT5511 is intended for applications
with LO frequencies of 0.4GHz to 2.7GHz and IF input
frequencies from 10MHz to 300MHz, but can be used at
other frequencies with excellent results. The LT5511 can
be used in applications using either a low side or high side
LO.
IF Input Port
The IF+ and IF– pins are the differential inputs to the mixer.
These inputs drive the emitters of the switching transis-
tors, and thus have a low impedance. The DC current
through these transistors is set by external resistors from
each IF pin to ground. The typical internal voltage on the
emitters is 1.2V; thus, the current through each IF pin is
approximately:
IIF = 1.2/RIF
LO Input Port
RIF is the value of the external resistors to ground. Best
performance is obtained when the IF inputs are perfectly
balanced and 0.1% tolerance resistors are recommended
here. The LT5511 has been characterized with 75Ω
resistors on each of the IF inputs.
The LO buffer on the LT5511 consists of differential high
speed amplifiers and limiters that are designed to drive the
mixer quad to achieve high linearity and performance at
high IF input signal levels. The LO+ and LO– pins are the
differential inputs to the LO buffer. Though the LO signal
can be applied differentially, the LO buffer performs well
with only one input driven, thus eliminating the need for a
balun. In this case, a capacitor should be connected
between the unused LO input pin and ground. The LO pins
are biased internally to about 1.4V, and thus must be DC
isolated from the external LO signal source.
The IF signal to the mixer must be differential. To realize
this,anRFbaluntransformerorlumpedelementbaluncan
be used. The RF transformer is recommended, as it is
easier to realize broadband operation, and also does not
have the component sensitivity issues of a lumped ele-
ment balun.
The differential input impedance of the IF input is approxi-
mately 12.5Ω; therefore, a 4:1 impedance transformation
is required to match to 50Ω. Selecting a transformer with
this impedance ratio will reduce the amount of additional
components required, as the full impedance transforma-
tion is realized by the transformer. DC-isolating trans-
formers or transmission-line transformers can be used,
as could lumped element transformation networks. Be-
cause the IF ports are internally biased, they must be DC
isolated from the IF source. Additionally, IF+ and IF– must
be DC isolated from each other in order to maintain good
LO suppression.
The LO input should be matched to 50Ω. The impedance
match can be accomplished through the use of a reactive
impedance matching network. However, for lower LO
frequencies (below about 1.5GHz), an easier approach is
to use a shunt 62Ω resistor to resistively match the port.
(The resistor must be DC isolated from the LO input pin).
This method is broadband and requires LO power levels of
only–10dBm. Athigherfrequencies, abettermatchcanbe
realized with reactive components. Transmission lines
and parasitics should be considered when designing the
matching circuits. Typical S-parameter data for the LO
input is included in Table 1 to facilitate the design of the
matching network.
5511i
11
LT5511
U
W U U
APPLICATIO S I FOR ATIO
On the evaluation board (Figure 4), 1nF DC-blocking
capacitorsareusedontheIFinputpins. A220pFcapacitor
on the 50Ω source side of the input balun is used to tune
outtheexcessinductancetoimprovethematchat50MHz.
Toshiftthematchhigherinfrequency, thiscapacitorvalue
should be reduced.
optimum performance. These pins are biased at the
supply voltage, which can be applied through the center
tapoftheoutputtransformer.(ThecentertapshouldbeRF
bypassedforbestperformance). Apairofseriesinductors
can be used to match RF+ and RF– to the high impedance
(200Ω) side of a 4:1 balun.
The output balun has a significant impact on the perfor-
mance of the mixer. A broadband balun provides better
rejection of the 2fLO spur. If the level of that spur is not
critical, a less expensive and smaller balun can be used.
The amplitude and phase balances of the balun will affect
the LO suppression.
RF Output Port
The RF outputs, RF+ and RF–, are internally connected to
the collectors of the mixer switching transistors. These
differential output signals should be combined externally
throughanRFbaluntransformeror180°hybridtoachieve
(4b) Top Layer Metal
(4a) Top Layer Silkscreen
Figure 4. Evaluation Board Layout.
5511f
12
LT5511
U
W U U
APPLICATIO S I FOR ATIO
SPECTRUM
ANALYZER
POWER
SUPPLY
RF
OUT
GND
10dB
PAD
E3
E2
E1
T2
LO
IN
LT5511
IC
LO SIGNAL
GENERATOR 3
DMM
T1
SW1
IF
IN
RF SIGNAL
GENERATOR 1
POWER
SUPPLY
+
(OR PULSE GENERATOR
FOR TURN-ON AND
TURN-OFF MEASUREMENTS)
RF SIGNAL
GENERATOR 2
5511 F05
Figure 5. Test Set-Up for Mixer Measurements
5511i
13
LT5511
U
TYPICAL APPLICATIO S
LO
C1
V
V
CC
CC
C11
+
L1
C5
C4
C7
LT5511
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
–
LO
LO
NC
V LO
CC
C10
C9
RF
L6
T2
+
IF
3
2
1
GND
GND
TL1
TL2
(50Ω)
R2
R3
+
+
C2
IF
RF
C12
EN
C13
L7
–
IF
(50Ω)
–
–
IF
RF
5
4
GND
GND
EN
V
V BIAS
CC
CC
R5
C18
GND
NC
5511 F06
EXPOSED
PAD GND
Component
C1, C9
C5, C7, C18
C4
Value
Comments
0402
22pF
100pF
0.1µF
0402
0402
C2
12pF
0402
C10, C12, C13
1000pF
1pF
0402
C11
L1
0402
5.2nH
5.6nH
75Ω, 0.1%
10kΩ
1:1
0402
L6, L7
R2, R3
R5
0402
0603
0402
T2
MURATA LDB15C500A2400
Transmission Lines
TL1, TL2
Z = 80Ω
O
L = 16° AT 2.4GHz
Figure 6. Test Circuit Schematic for 2.4GHz RF Application with 300MHz IF Input Frequency
5511f
14
LT5511
U
TYPICAL APPLICATIO S
IIP3 and IIP2 vs Output Frequency
(Figure 6)
Conversion Gain and LO to RF Leakage
vs Output Frequency (Figure 6)
50
45
40
35
30
25
20
15
10
5
0
–1
–2
–3
–4
–5
–6
–7
–8
–9
–10
–8
–13
IIP2
–18
GAIN
–23
f
f
P
f
= 300MHz AT –8dBm
= 301MHz AT –8dBm
= –10dBm
IF1
IF2
LO
–28
–33
–38
–43
–48
–53
–58
f
f
P
f
= 300MHz AT –8dBm
= 301MHz AT –8dBm
= –10dBm
IF1
IF2
LO
SWEPT FROM 1900MHz TO 2300MHz
LO
SWEPT FROM 1900MHz TO 2300MHz
LO
IIP3
LO LEAKAGE
0
2200
2300
2400
2500
2600
2200
2300
2400
2500
2600
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
5511 F06a
5511 F06a
5511i
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LT5511
U
PACKAGE DESCRIPTIO
FE Package
16-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663)
Exposed Pad Variation BA
4.90 – 5.10*
(.193 – .201)
2.74
(.108)
2.74
(.108)
16 1514 13 12 1110
9
6.60 ±0.10
4.50 ±0.10
2.74
(.108)
SEE NOTE 4
2.74
(.108)
6.40
BSC
0.45 ±0.05
1.05 ±0.10
0.65 BSC
5
7
8
1
2
3
4
6
RECOMMENDED SOLDER PAD LAYOUT
1.10
(.0433)
MAX
4.30 – 4.50*
(.169 – .177)
0° – 8°
0.65
(.0256)
BSC
0.45 – 0.75
0.09 – 0.20
0.05 – 0.15
(.018 – .030)
(.0036 – .0079)
(.002 – .006)
0.195 – 0.30
(.0077 – .0118)
FE16 (BA) TSSOP 0203
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS 4. RECOMMENDED MINIMUM PCB METAL SIZE
FOR EXPOSED PAD ATTACHMENT
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.150mm (.006") PER SIDE
MILLIMETERS
(INCHES)
2. DIMENSIONS ARE IN
3. DRAWING NOT TO SCALE
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
LT5500
LT5502
1.8GHz to 2.7GHz Receiver-Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90db RSSI Range
LT5503
1.2GHz to 2.7GHz Direct IQ Modulator
and Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
LT5504
LTC®5505
LT5506
LT5507
LTC5508
LT5512
800MHz to 2.7GHz Measuring Receiver
RF Power Detectors with >40dB Dynamic Range
500MHz Quadrature Demodulator with VGA
100kHz to 1GHz RF Power Detector
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply
1.8V to 5.25V Supply, –4dB to 57dB Linear Power Gain
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
>40dB Dynamic Range, SC70 Package
300MHz to 7GHz RF Power Detector
High Signal Level Down Converting Mixer
Up to 3GHz, 20dBm IIP3, Integrated LO Buffer
5511f
LT/TP 0503 1K • PRINTED IN USA
16 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2001
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