LT5516EUF#TR [Linear]
LT5516 - 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C;
| 型号： | LT5516EUF#TR |
| 厂家： | 
Linear |
| 描述： | LT5516 - 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C 射频 微波 |
| 文件： | 总12页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT5516
800MHz to 1.5GHz Direct
Conversion Quadrature Demodulator
U
DESCRIPTIO
FEATURES
■
Frequency Range: 800MHz to 1.5GHz
High IIP3: 21.5dBm at 900MHz
High IIP2: 52dBm
Noise Figure: 12.8dB at 900MHz
Conversion Gain: 4.3dB at 900MHz
I/Q Gain Mismatch: 0.2dB
Shutdown Mode
The LT®5516 is an 800MHz to 1.5GHz direct conversion
quadrature demodulator optimized for high linearity re-
ceiver applications. It is suitable for communications
receiverswhereanRForIFsignalisdirectlyconvertedinto
I and Q baseband signals with bandwidth up to 260MHz.
The LT5516 incorporates balanced I and Q mixers, LO
buffer amplifiers and a precision, high frequency quadra-
ture generator.
■
■
■
■
■
■
■
16-Lead QFN 4mm × 4mm Package
with Exposed Pad
In an RF receiver, the high linearity of the LT5516 provides
excellent spur-free dynamic range, even with fixed gain
front end amplification. This direct conversion receiver
can eliminate the need for intermediate frequency (IF)
signal processing, as well as the corresponding require-
ments for image filtering and IF filtering. Channel filtering
can be performed directly at the outputs of the I and Q
channels. These outputs can interface directly to channel-
select filters (LPFs) or to a baseband amplifier.
U
APPLICATIO S
■
Cellular/PCS/UMTS Infrastructure
■
High Linearity Direct Conversion I/Q Receiver
■
High Linearity I/Q Demodulator
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
TYPICAL APPLICATIO
I/Q Output Power, IM3 vs
RF Input Power
5V
BPF
BPF
V
CC
LT5516
+
+
RF
20
LNA
LPF
I
OUT
VGA
VGA
0
–20
–
I
P
OUT
OUT
0°
–
+
RF
LO
DSP
–40
LO INPUT
ENABLE
IM3
+
LPF
V
= 5v
Q
Q
CC
= 25°C
OUT
–60
T
A
0°/90°
P
LO
= –10dBm
= 901MHz
= 899.9MHz
–
OUT
f
f
f
LO
RF1
RF2
–80
90°
–
LO
EN
= 900.1MHz
–100
5516 F01
–18
–14
–10
–6
–2
2 6
RF INPUT POWER (dBm)
5516 TA01
Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure
sn5516 5516fs
1
LT5516
W W U W
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ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
TOP VIEW
ORDER PART
NUMBER
Power Supply Voltage ............................................ 5.5V
Enable Voltage ...................................................... 0, VCC
LO+ to LO– Differential Voltage ............................... ±2V
(+10dBm Equivalent)
16 15 14 13
LT5516EUF
GND
1
2
3
4
12 V
CC
–
+
RF
11 LO
–
RF+ to RF– Differential Voltage ................................ ±2V
(+10dBm Equivalent)
+
RF
LO
V
10
9
GND
CC
5
6
7
8
UF PART
MARKING
Operating Ambient Temperature..............–40°C to 85°C
Storage Temperature Range ................. –65°C to 125°C
Maximum Junction Temperature .......................... 125°C
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
5516
EXPOSED PAD IS GROUND
(MUST BE SOLDERED TO PCB)
TJMAX = 125°C, θJA = 38°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
TA = 25°C. VCC = 5V, EN = high, fRF1 = 899.9MHz, fRF2 = 900.1MHz,
fLO = 901MHz, PLO = –10dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
PARAMETER
CONDITIONS
MIN
TYP
0.8 to 1.5
–13 to –2
4.3
MAX
UNITS
GHz
Frequency Range
LO Power
dBm
dB
Conversion Gain
Voltage Gain, Load Impedance = 1k
2
Conversion Gain Variation vs Temperature
Noise Figure
–40°C to 85°C
0.01
dB/°C
R1 = 8.2Ω
R1 = 3.3Ω, P = –5dBm
11.4
12.8
dB
dB
LO
Input 3rd Order Intercept
Input 2nd Order Intercept
2-Tone, –10dBm/Tone,
∆f = 200kHz
R1 = 8.2Ω
R1 = 3.3Ω, P = –5dBm
17.0
21.5
dBm
dBm
LO
Input = –10dBm
R1 = 8.2Ω
R1 = 3.3Ω, P = –5dBm
46.0
52.0
dBm
dBm
LO
Input 1dB Compression
Baseband Bandwidth
I/Q Gain Mismatch
I/Q Phase Mismatch
Output Impedance
LO to RF Leakage
R1 = 8.2Ω
6.6
260
0.2
1
dBm
MHz
dB
(Note 4)
0.7
(Note 4)
degree
Ω
Differential
120
–65
57
dBm
dB
RF to LO Isolation
sn5516 5516fs
2
LT5516
DC ELECTRICAL CHARACTERISTICS
TA = 25°C. VCC = 5V unless otherwise noted.
PARAMETER
CONDITIONS
MIN
4
TYP
MAX
5.25
150
20
UNITS
V
Supply Voltage
Supply Current
Shutdown Current
Turn-On Time
80
117
mA
µA
ns
EN = Low
120
650
Turn-Off Time
ns
EN = High (On)
EN = Low (Off)
EN Input Current
Output DC Offset Voltage
1.6
V
1.3
25
V
V
= 5V
2
1
µA
mV
ENABLE
f
= 901MHz, P = –10dBm
LO
LO
+
–
+
–
⏐
(
⏐I
– I
⏐
,
⏐Q
– Q
OUT
)
OUT
OUT
OUT
Output DC Offset Variation vs Temperature
–40°C to 85°C
20
µV/°C
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Tests are performed as shown in the configuration of Figure 2 with
R1 = 8.2Ω, unless otherwise noted.
Note 3: Specifications over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
control.
Note 4: Measured at P = –10dBm and output frequency = 1MHz.
RF
sn5516 5516fs
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LT5516
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
Conv Gain, NF, IIP3 vs
RF Input Frequency
Supply Current vs Supply Voltage
160
25
20
15
10
5
P
A
V
= –10dBm
R1 = 8.2Ω
LO
T
= 25°C
T
T
T
= 85°C
= 25°C
= –40°C
A
= 5V
140
120
100
80
CC
R1 = 8.2Ω
IIP3
NF
A
A
CONV. GAIN
1100
60
40
0
4
4.5
5
5.5
800
900
1000
1200
1300
SUPPLY VOLTAGE (V)
RF INPUT FREQUENCY (MHz)
5516 G01
5516 G02
I/Q Output Power, IM3 vs
RF Input Power
IIP2 vs RF Input Frequency
20
0
70
60
50
40
30
20
P
A
V
= –10dBm
f
= 901MHz
V = 5V
CC
LO
LO
T
= 25°C
= 5V
R1 = 8.2Ω
CC
R1 = 8.2Ω
OUTPUT POWER
–20
–40
–60
–80
–100
IM3
T
= –40°C
A
T
= 25°C
A
T
= 85°C
A
800
900
1000
1100
1200
1300
–18
–14
–10
–6
–2
2
6
RF INPUT FREQUENCY (MHz)
RF INPUT POWER (dBm)
5516 G03
5516 G04
I/Q Gain Mismatch vs
RF Input Frequency
1.2
0.8
T
= –40°C
A
0.4
0
T
= 85°C
T
= 25°C
A
A
–0.4
–0.8
–1.2
P
f
= –10dBm
= 1MHz
= 5V
LO
BB
CC
V
R1 = 8.2Ω
800 900 1000 1100 1200 1300 1400 1500
RF INPUT FREQUENCY (MHz)
5516 G05
sn5516 5516fs
4
LT5516
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
I/Q Phase Mismatch vs
RF Input Frequency
NF vs LO Input Power
6
18
16
14
12
10
8
f
= 1300MHz
RF
4
T
= –40°C
A
f
f
= 1100MHz
= 900MHz
RF
RF
2
0
T
= 25°C
A
T
= 85°C
A
–2
–4
–6
P
f
= –10dBm
= 1MHz
= 5V
LO
BB
CC
T
= 25°C
CC
A
6
V
V
= 5V
R1 = 8.2Ω
R1 = 8.2Ω
4
–14
–12
–10
–8
–6
–4
–2
800 900 1000 1100 1200 1300 1400 1500
RF INPUT FREQUENCY (MHz)
LO INPUT POWER (dBm)
5516 G07
5516 G06
Conv Gain, IIP3 vs LO Input Power
IIP2 vs LO Input Power
20
16
12
8
70
T
= 85°C
A
f
= 901MHz
= 5V
LO
CC
V
65
60
55
50
45
40
35
30
R1 = 8.2Ω
T
= –40°C
A
IIP3
= 901MHz
T
T
= 25°C
= 25°C
A
A
T
= 85°C
A
f
LO
T
= –40°C
A
V
= 5V
CC
R1 = 8.2Ω
CONV GAIN
T
= 25°C
A
T
T
= –40°C
= 85°C
A
A
4
0
–14
–12
–10
–8
–6
–4
–2
–14
–12
–10
–8
–6
–4
–2
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5516 G08
5516 G09
Conv Gain, IIP3 vs Supply Voltage
20
16
12
8
T
= 85°C
A
T
= –40°C
A
T
= 25°C
= 25°C
A
A
IIP3
= 901MHz
f
LO
P
= –10dBm
LO
R1 = 8.2Ω
T
CONV GAIN
T
T
= –40°C
= 85°C
A
A
4
0
4
4.5
5
5.5
SUPPLY VOLTAGE (V)
5516 G10
sn5516 5516fs
5
LT5516
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TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 900MHz operation as shown in Figure 2)
LO-RF Leakage vs LO Input Power
RF-LO Isolation vs RF Input Power
80
70
60
50
40
30
20
–55
T
= 25°C
CC
A
V
= 5V
f
= 1100MHz
RF
R1 = 8.2Ω
–60
–65
–70
–75
–80
f
f
= 1300MHz
= 900MHz
RF
RF
f
= 900MHz
RF
f
f
= 1300MHz
= 1100MHz
RF
RF
T
= 25°C
CC
A
V
= 5V
R1 = 8.2Ω
–15 –10
–5
0
5
10
–14
–12
–10
–8
–6
–4
–2
RF INPUT POWER (dBm)
LO INPUT POWER (dBm)
5516 G12
5516 G11
RF, LO Port Return Loss vs
Frequency
Conv Gain vs Baseband Frequency
0
–5
8
6
RF
LO
T
T
= –40°C
= 85°C
A
A
–10
–15
–20
–25
–30
4
2
T
= 25°C
A
0
f
= 1000MHz
= 5V
R1 = 8.2Ω
T
= 25°C
CC
LO
CC
–2
–4
A
V
V
= 5V
R1 = 8.2Ω
0
0.5
1
1.5
2
2.5
0.1
1
10
100
1000
FREQUENCY (GHz)
BASEBAND FREQUENCY (MHz)
5516 G13
5516 G14
Conv Gain, NF, IIP3 vs R1
Supply Current, IIP2 vs R1
150
130
110
90
25
20
15
10
T
= 25°C
CC
P
LO
= –5dBm
LO
T
= 25°C
CC
P
LO
= –5dBm
LO
A
A
V
= 5V
f
= 901MHz
V
= 5V
f
= 901MHz
SUPPLY CURRENT
IIP3
NF
70
IIP2
CONV GAIN
5
0
50
30
3
5
6
7
8
9
4
3
5
6
7
8
9
4
R1 (Ω)
R1 (Ω)
5516 G16
5516 G15
sn5516 5516fs
6
LT5516
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U
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PI FU CTIO S
GND (Pins 1, 4): Ground Pin.
LO+, LO– (Pins 10, 11): Differential Local Oscillator Input
Pins. These pins are internally biased to 2.44V. They can
bedrivensingle-endedbyconnectingonetoanACground
through a 1000pF capacitor. However, differential input
drive is recommended to minimize LO feedthrough to the
RF input pins.
QOUT–, QOUT+ (Pins 13, 14): Differential Baseband Output
Pins of the Q-Channel. The internal DC bias voltage is VCC
–0.68V for each pin.
RF+, RF– (Pins 2, 3): Differential RF Input Pins. These
pins are internally biased to 1.54V. They must be driven
with a differential signal. An external matching network is
required for impedance transformation.
VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
V
CM (Pin6):CommonModeandDCReturnfortheI-Mixer
and Q-Mixer. An external resistor must be connected
between this pin and ground to set the dc bias current of
the I/Q demodulator.
IOUT–, IOUT+ (Pins 15, 16): Differential Baseband Output
Pins of the I-Channel. The internal DC bias voltage is VCC
–0.68V for each pin.
EN (Pin 7): Enable Pin. When the input voltage is higher
than 1.6V, the circuit is completely turned on. When the
input voltage is less than 1.3V, the circuit is turned off.
GROUND (Pin 17, Backside Contact): Ground Return for
the Entire IC. This pin must be soldered to the printed
circuit board ground plane.
W
BLOCK DIAGRA
V
V
V
V
CC
12
CC
CC
CC
5
8
9
I-MIXER
+
LPF
LPF
16
15
I
I
OUT
–
RF AMP
OUT
+
–
RF
RF
2
3
LO BUFFERS
0°/90°
+
14
13
Q
Q
OUT
V
CM
6
–
OUT
Q-MIXER
17
BIAS
7
1
4
10
+
11
–
EN
GND GND
LO
LO
5516 BD
sn5516 5516fs
7
LT5516
TEST CIRCUITS
J3
J4
J5
J6
–
+
+
–
I
I
Q
Q
OUT
OUT
OUT
OUT
T1
LDB31900M20C-416
T2
LDB31900M20C-416
J1
J2
RF
LO
GND
V
CC
–
2
3
6
1
6
1
2
3
+
RF
RF
LO
LO
L1
33nH
L4
27nH
LT5516
–
+
4
4
GND
V
CC
C5
1nF
C2
1nF
C1
1nF
V
CC
R3 1k
EN
C7
1nF
R1
8.2Ω
R2
100k
C6
1nF
C3
0.1µF
C4
2.2µF
REFERENCE
DESIGNATION
VALUE
SIZE
0402
0402
3216
0402
0402
0402
0402
0402
PART NUMBER
AVX 04025C102JAT
AVX 0402ZD104KAT
AVX TPSA225M010R1800
Murata LQP10A
C1,C2,C5,C6,C7
C3
C4
L1
L4
R1
R2
R3
1nF
0.1µF
2.2µF
33nH
27nH
8.2Ω
100k
1k
Murata LQP10A
T1, T2
1:4
Murata LDB31900M20C-416
5516 F02
Figure 2. 900MHz Evaluation Circuit Schematic
Figure 3. Component Side Silkscreen of Evaluation Board
Figure 4. Component Side Layout of Evaluation Board
sn5516 5516fs
8
LT5516
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W U U
APPLICATIO S I FOR ATIO
The LT5516 is a direct I/Q demodulator targeting high
linearity receiver applications, including wireless infra-
structure. It consists of an RF amplifier, I/Q mixers, a
quadrature LO carrier generator and bias circuitry.
An external resistor (R1) is connected to Pin 6 (VCM) to set
theoptimumDCcurrentforI/Qmixerlinearity.TheIIP3can
be improved with a smaller R1 at a price of slightly higher
NF and ICC. The RF performances of NF, IIP3 and IIP2 vs
R1 are shown in the Typical Performance Characteristics.
The RF signal is applied to the inputs of the RF amplifier
and is then demodulated into I/Q baseband signals using
quadrature LO signals. The quadrature LO signals are
internally generated by precision 90° phase shifters. The
demodulated I/Q signals are lowpass filtered internally
with a –3dB bandwidth of 265MHz. The differential out-
puts of the I-channel and Q-channel are well matched in
amplitude; their phases are 90° apart.
LO Input Port
The LO inputs (Pins 10,11) should be driven differentially
to minimize LO feedthrough to the RF port. This can be
accomplished by means of a single-ended to differential
conversion as shown in Figure 2. L4, the 27nH shunt
inductor, serves to tune out the capacitive component of
the LO differential input. The resonance frequency of the
inductor should be greater than the operating frequency.
A 1:4 transformer is used on the demo board to match the
200Ω on-chip resistance to a 50Ω source. Figure 6 shows
the LO input equivalent circuit and the associated match-
ing network.
RF Input Port
Differential drive is highly recommended for the RF inputs
to minimize the LO feedthrough to the RF port and to
maximize gain. (See Figure 2.) A 1:4 transformer is used
on the demonstration board for wider bandwidth match-
ing. To assure good NF and maximize the demodulator
gain, a low loss transformer is employed. Shunt inductor
L1, with high resonance frequency, is required for proper
impedance matching. Single-ended to differential conver-
sioncanalsobeimplementedusingnarrowband, discrete
L-C circuits to produce the required balanced waveforms
at the RF+ and RF– inputs.The differential impedance of
the RF inputs is listed in Table 1.
Single-ended to differential conversion at the LO inputs
can also be implemented using a discrete L-C circuit to
produce a balanced waveform without a transformer.
An alternative solution is a simple single-ended termina-
tion.However,theLOfeedthroughtoRFmaybedegraded.
EitherLO+ orLO– inputcanbeterminatedtoa50Ωsource
with a matching circuit, while the other input is connected
to ground through a 100pF bypass capacitor.
Table 1. RF Input Differential Impedance
Table 2 shows the differential input impedance of the LO
input port.
DIFFERENTIAL S11
FREQUENCY DIFFERENTIAL INPUT
(MHz)
IMPEDANCE (Ω)
169.7-j195.2
156.1-j181.8
145.6-j170.0
137.3-j160.0
130.7-j152.1
124.9-j144.7
119.9-j138.3
115.7-j133.1
MAG
0.779
0.766
0.753
0.740
0.729
0.718
0.707
0.698
ANGLE (°)
–16.9
–18.3
–19.6
–20.9
–21.9
–23.0
–24.0
–24.9
Table 2. LO Input Differential Impedance
800
DIFFERENTIAL S11
FREQUENCY DIFFERENTIAL INPUT
900
(MHz)
IMPEDANCE (Ω)
118.4-j65.1
110.1-j66.7
102.2-j67.5
94.6-j67.2
MAG
0.552
0.517
0.512
0.505
0.498
0.490
0.480
0.469
ANGLE (°)
–22.5
–25.4
–28.5
–31.8
–35.0
–38.3
–42.0
–45.8
1000
1100
1200
1300
1400
1500
800
900
1000
1100
1200
1300
1400
1500
87.5-j66.1
80.8-j64.4
The RF+ and RF– inputs (Pins 2, 3) are internally biased at
2.44V. These two pins should be DC blocked when con-
nected to ground or other matching components. The RF
input equivalent circuit is shown in Figure 5.
74.7-j62.1
69.3-j59.4
sn5516 5516fs
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LT5516
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W U U
APPLICATIO S I FOR ATIO
I-Channel and Q-Channel Outputs
The phase relationship between the I-channel output sig-
nal and Q-channel output signal is fixed. When the LO
input frequency is larger (or smaller) than the RF input
frequency, the Q-channel outputs (QOUT+, QOUT–) lead (or
lag) I-channel outputs (IOUT+, IOUT–) by 90°.
Each of the I-channel and Q-channel outputs is internally
connected to VCC though a 60Ω resistor. The output dc
biasvoltageisVCC –0.68V.TheoutputscanbeDCcoupled
or AC coupled to the external loads. The differential output
impedance of the demodulator is 120Ω in parallel with a
5pF internal capacitor, forming a lowpass filter with a
–3dB corner frequency at 265MHz. RLOAD (the single-
ended load resistance) should be larger than 600Ω to
assure full gain. The gain is reduced by 20 • log(1 + 120Ω/
When AC output coupling is used, the resulting highpass
filter’s –3dB roll-off frequency is defined by the R-C
constant of the blocking capacitor and RLOAD, assuming
RLOAD > 600Ω.
Care should be taken when the demodulator’s outputs are
DC coupled to the external load, to make sure that the I/Q
mixers are biased properly. If the current drain from the
outputs exceeds 6mA, there can be significant degrada-
tion of the linearity performance. Each output can sink no
more than 13mA when the outputs are connected to an
external load with a DC voltage higher than VCC – 0.68V.
The I/Q output equivalent circuit is shown in Figure 7.
R
LOAD) in dB when the differential output is terminated by
LOAD. For instance, the gain is reduced by 6.85dB when
R
each output pin is connected to a 50Ω load (100Ω differ-
ential load). The output should be taken differentially (or
by using differential-to-single-ended conversion) for best
RF performance, including NF and IM2.
LT5516
V
CC
T1
LDB31900M20C-416
J1
+
–
1.54V
RF
RF
RF
2
3
2
3
6
1
L1
33nH
1k
4
1.54V
C1
1nF
5516 F05
Figure 5. RF Input Equivalent Circuit with External Matching
sn5516 5516fs
10
LT5516
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W U U
APPLICATIO S I FOR ATIO
V
CC
V
CC
60Ω
60Ω
60Ω
60Ω
+
T2
I
I
OUT
OUT
LDB31900M20C-416
J2
16
15
+
–
2.44V
LO
LO
–
LO
10
11
2
3
6
1
L4
27nH
+
–
5pF
200Ω
Q
Q
OUT
OUT
14
13
4
2.44V
C2
1nF
5pF
5516 F06
5516 F07
Figure 6. LO Input Equivalent Circuit with External Matching
Figure 7. I/Q Output Equivalent Circuit
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.90 ± 0.05
2.15 ± 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
0.75 ± 0.05
R = 0.115
TYP
0.55 ± 0.20
4.00 ± 0.10
(4 SIDES)
15
16
PIN 1
TOP MARK
1
2
2.15 ± 0.10
(4-SIDES)
(UF) QFN 0802
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
sn5516 5516fs
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LT5516
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
RF Power Controllers
LTC1757A
LTC1758
LTC1957
LTC4400
LTC4401
LTC4403
LT5500
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
SOT-23 RF PA Controller
SOT-23 RF PA Controller
RF Power Controller for EDGE/TDMA
RF Front End
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW
Multiband GSM/GPRS/EDGE Mobile Phones
Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer,
1.8V ≤ V
≤ 5.25V
SUPPLY
LT5502
LT5503
400MHz Quadrature Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range
1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth
1.2GHz to 2.7GHz Direct IQ Modulator and
Up Converting Mixer
LT5504
LTC5505
LT5506
LTC5507
LTC5508
LTC5509
LT5511
LT5512
800MHz to 2.7GHz RF Measuring Receiver
300MHz to 3.5GHz RF Power Detector
500MHz Quadrature IF Demodulator with VGA
100kHz to 1GHz RF Power Detector
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
SC70 Package
300MHz to 7GHz RF Power Detector
300MHz to 3GHz RF Power Detector
High Signal Level Up Converting Mixer
High Signal Level Down Converting Mixer
36dB Dynamic Range, SC70 Package
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC-3GHz, 20dBm IIP3, Integrated LO Buffer
sn5516 5516fs
LT/TP 0503 1K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
©LINEAR TECHNOLOGY CORPORATION 2003
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