LT5571EUF_技术文档

LT5571

620MHz – 1100MHz High

Linearity Direct Quadrature

Modulator

FEATURES

DESCRIPTION

The LT^®5571 is a direct I/Q modulator designed for high

performance wireless applications, including wireless

infrastructure. It allows direct modulation of an RF signal

using differential baseband I and Q signals. It supports

RFID,GSM,EDGE,CDMA,CDMA2000,andothersystems.

It may also be conﬁgured as an image reject upconvert-

ing mixer by applying 90° phase-shifted signals to the I

and Q inputs. The high impedance I/Q baseband inputs

consist of voltage-to-current converters that in turn drive

double-balanced mixers. The outputs of these mixers are

summed and applied to an on-chip RF transformer, which

converts the differential mixer signals to a 50Ω single-

ended output. The four balanced I and Q baseband input

ports are intended for DC-coupling from a source with a

common-modevoltageatabout0.5V.TheLOpathconsists

of an LO buffer with single-ended input, and precision

quadrature generators that produce the LO drive for the

mixers. The supply voltage range is 4.5V to 5.25V.

■

Direct Conversion from Baseband to RF

■

High Output: –4.2dB Conversion Gain

■

High OIP3: 21.7dBm at 900MHz

■

Low Output Noise Floor at 20MHz Offset:

No RF: –159dBm/Hz

P

OUT

= 4dBm: –153.3dBm/Hz

■

Low Carrier Leakage: –42dBm at 900MHz

High Image Rejection: –53dBc at 900MHz

3-Ch CDMA2000 ACPR: –70.4dBc at 900MHz

Integrated LO Buffer and LO Quadrature Phase

Generator

■

50Ω AC-Coupled Single-Ended LO and RF Ports

High Impedance DC Interface to Baseband Inputs

with 0.5V Common Mode Voltage

■

16-Lead QFN 4mm × 4mm Package

APPLICATIONS

■

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

RFID Interrogators

■

GSM, CDMA, CDMA2000 Transmitters

■

Point-to-Point Wireless Infrastructure Tx

■

Image Reject Up-Converters for Cellular Bands

■

Low-Noise Variable Phase-Shifter for 620MHz to

1100MHz Local Oscillator Signals

TYPICAL APPLICATION

CDMA2000 ACPR, AltCPR and Noise vs RF

Output Power at 900MHz for 1 and 3 Carriers

Direct Conversion Transmitter Application

–40

–50

–60

–70

–80

–90

–110

–120

–130

–140

–150

–160

5V

DOWNLINK TEST

MODEL 64 DPCH

100nF

V

LT5571

×2

CC

RF = 620MHz

TO 1100MHz

I-DAC

3-CH ACPR

V-I

I-CH

1-CH

3-CH AltCPR

PA

ACPR

0°

EN

90°

BALUN

Q-CH

V-I

1-CH NOISE

Q-DAC

1-CH AltCPR

3-CH NOISE

BASEBAND

GENERATOR

5571 TA01a

–30

–25

–20

–15

–10

–5

0

VCO/SYNTHESIZER

RF OUTPUT POWER PER CARRIER (dBm)

5571 TA01b

5571f

1

LT5571

ABSOLUTE MAXIMUM RATINGS

PACKAGE/ORDER INFORMATION

(Note 1)

TOP VIEW

Supply Voltage.........................................................5.5V

Common-Mode Level of BBPI, BBMI and

BBPQ, BBMQ .......................................................0.6V

Operating Ambient Temperature

16 15 14 13

EN

GND

LO

1

2

3

4

12 GND

11 RF

17

(Note 2) ............................................... –40°C to 85°C

Storage Temperature Range................... –65°C to 125°C

Voltage on any Pin

GND

10

9

GND

5

6

7

8

Not to Exceed...................... –500mV to V + 500mV

CC

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

= 125°C, θ = 37°C/W

Note: The baseband input pins should not be left ﬂoating.

T

JMAX

JA

EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB

ORDER PART NUMBER

LT5571EUF

UF PART MARKING

5571

Order Options Tape and Reel: Add #TR

Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF

Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts speciﬁed with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz, f = 902MHz,

DC

CC

A

LO

RF

P

LO

= 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper

sideband selection). P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RF Output (RF)

f

RF

RF Frequency Range

–3dB Bandwidth

–1dB Bandwidth

0.62 to 1.1

0.65 to 1.04

GHz

S

RF Output Return Loss

RF Output Noise Floor

EN = High (Note 6)

EN = Low (Note 6)

12.7

11.6

dB

22, ON

22, OFF

NFloor

No Input Signal (Note 8)

–159

–153.3

–152.9

dBm/Hz

P

= 4dBm (Note 9)

= 4dBm (Note 10)

OUT

G

Conversion Voltage Gain

Absolute Output Power

20 • Log (V

/V )

–4.2

–0.2

–25.5

8.1

dB

dBm

dB

V

OUT, 50Ω IN, DIFF, I or Q

P

1V

P-P DIFF

CW Signal, I and Q

OUT

G

3 • LO Conversion Gain Difference

Output 1dB Compression

Output 2nd Order Intercept

Output 3rd Order Intercept

Image Rejection

(Note 17)

(Note 7)

3LO vs LO

OP1dB

OIP2

OIP3

IR

dBm

dBc

(Notes 13, 14)

(Notes 13, 15)

(Note 16)

63.8

21.7

–53

LOFT

Carrier Leakage (LO Feedthrough)

EN = High, P = 0dBm (Note 16)

–42

–61

dBm

LO

EN = Low, P = 0dBm (Note 16)

LO

5571f

2

LT5571

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz, f = 902MHz,

CC A LO RF

P

= 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency = 2MHz, I & Q 90° shifted (upper

LO

DC

sideband selection). P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

LO Input (LO)

f

LO Frequency Range

0.5 to 1.2

0

GHz

dBm

dB

LO

P

S

LO Input Power

–10

5

LO

LO Input Return Loss

EN = High (Note 6)

EN = Low (Note 6)

at 900MHz (Note 5)

–10.9

–2.6

11, ON

11, OFF

LO Input Return Loss

dB

NF

LO Input Referred Noise Figure

LO to RF Small Signal Gain

LO Input 3rd Order Intercept

14.3

dB

LO

G

18.5

dB

LO

IIP3

–4.8

dBm

LO

Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)

BW

Baseband Bandwidth

–3dB Bandwidth

400

0.5

MHz

V

BB

V

CMBB

DC Common-Mode Voltage

Differential Input Resistance

Baseband Static Input Current

Carrier Feedthrough on BB

Input 1dB Compression Point

I/Q Absolute Gain Imbalance

I/Q Absolute Phase Imbalance

Externally Applied (Note 4)

0.6

R

IN

90

kΩ

µA

I

(Note 4)

–24

–42

2.9

DC, IN

P

No Baseband Signal (Note 4)

Differential Peak-to-Peak (Note 7)

dBm

LO-BB

IP1dB

V

P-P,DIFF

ΔG

0.013

0.24

dB

I/Q

Δϕ

Deg

Power Supply (V

)

CC

V

Supply Voltage

4.5

5

5.25

120

100

V

mA

µA

µs

CC

I

t

Supply Current

EN = High

97

CC(ON)

CC(OFF)

ON

Supply Current, Shutdown Mode

Turn-On Time

EN = 0V

EN = Low to High (Note 11)

EN = High to Low (Note 12)

0.4

1.4

Turn-Off Time

µs

OFF

Enable (EN), Low = Off, High = On

Enable

Input High Voltage

Input High Current

EN = High

EN = 5V

1

V

µA

230

Shutdown

Input Low Voltage

EN = Low

0.5

V

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: Speciﬁcations over the –40°C to 85°C temperature range are

assured by design, characterization and correlation with statistical process

controls.

Note 9: At 20MHz offset from the CW signal frequency.

Note 10: At 5MHz offset from the CW signal frequency.

Note 11: RF power is within 10% of ﬁnal value.

Note 12: RF power is at least 30dB lower than in the ON state.

Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set

in such a way that the two resulting RF tones are –10dBm each.

Note 14: IM2 measured at LO frequency + 4.1MHz

Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +

2.2MHz.

Note 16: Amplitude average of the characterization data set without image

or LO feed-through nulling (unadjusted).

Note 17: The difference in conversion gain between the spurious signal at

f = 3 • LO – BB versus the conversion gain at the desired signal at f = LO +

BB for BB = 2MHz and LO = 900MHz.

Note 3: Tests are performed as shown in the conﬁguration of Figure 7.

Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.

Note 5: V(BBPI) – V(BBMI) = 1V , V(BBPQ) – V(BBMQ) = 1V

.

DC

Note 6: Maximum value within –1dB bandwidth.

Note 7: An external coupling capacitor is used in the RF output line.

Note 8: At 20MHz offset from the LO signal frequency.

5571f

3

LT5571

TYPICAL PERFORMANCE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC A LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency f = 2MHz, I & Q 90°

LO DC BB

shifted, without image or LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-

RF

BB

LO

RF(OUT)

tone measurements), unless otherwise noted. (Note 3)

RF Output Power vs LO Frequency

at 1V Differential Baseband

P-P

Supply Current vs Supply Voltage

Voltage Gain vs LO Frequency

Drive

–2

–4

110

100

90

2

0

85°C

25°C

–6

–2

–8

–10

–12

–14

–4

–6

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–8

–40°C

–10

–16

–12

80

550 650 750 850 950 1050 1150 1250

4.50

4.75

5.00

5.25

SUPPLY VOLTAGE (V)

LO FREQUENCY (MHz)

5558 G03

5571 G02

5571 G01

Output 1dB Compression vs

LO Frequency

Output IP3 vs LO Frequency

Output IP2 vs LO Frequency

26

24

75

70

65

60

55

50

45

10

f

= 2MHz

= 2.1MHz

f

= f

,

+ f

,

+ f

LO

BB, 1

BB, 2

IM2 BB

BB

1

BB

2

,

= 2MHz

1

2

= 2.1MHz

8

6

22

20

18

16

14

4

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

2

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

0

12

–2

550 650 750 850 950 1050 1150 1250

LO FREQUENCY (MHz)

5571 G04

5571 G05

5571 G06

LO Feedthrough to RF Output vs

LO Frequency

2 • LO Leakage to RF Output vs

2 • LO Frequency

3 • LO Leakage to RF Output vs

3 • LO Frequency

–40

–45

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–50

–55

–60

–65

–70

–42

–44

–46

–48

–45

–50

–55

–60

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

550 650 750 850 950 1050 1150 1250

1.65 1.95 2.25 2.55 2.85 3.15 3.5 3.75

1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5

2 • LO FREQUENCY (GHz)

LO FREQUENCY (MHz)

3 • LO FREQUENCY (GHz)

5571 G07

5571 G09

5571 G08

5571f

4

LT5571

TYPICAL PERFORMANCE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC A LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency f = 2MHz, I & Q 90°

LO DC BB

shifted, without image or LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-

RF

BB

LO

RF(OUT)

tone measurements), unless otherwise noted. (Note 3)

LO and RF Port Return Loss vs

Frequency

Noise Floor vs RF Frequency

Image Rejection vs LO Frequency

–157

–158

–159

–160

–161

–162

–30

–35

–40

–45

–50

–55

0

–10

–20

–30

–40

f

= 900MHz (FIXED)

LO

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

NO BASEBAND SIGNAL

LO PORT, EN = LOW

LO PORT, EN = HIGH, P = 0dBm

LO

RF PORT,

EN = LOW

RF PORT,

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

EN = HIGH,

P

= 0dBm

LO

RF PORT,

EN = HIGH,

NO LO

LO PORT,

EN = HIGH,

P

= –10dBm

LO

550 650 750 850 950 1050 1150 1250

FREQUENCY (MHz)

RF FREQUENCY (MHz)

LO FREQUENCY (MHz)

5571 G10

5571 G12

5571 G11

Absolute I/Q Gain Imbalance vs

LO Frequency

Absolute I/Q Phase Imbalance vs

LO Frequency

Voltage Gain vs LO Power

0.3

0.2

0.1

0

3

–2

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–4

–6

2

1

0

–8

–10

–12

–14

–16

–18

–20

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

550 650 750 850 950 1050 1150 1250

–20 –16 –12 –8

–4

0

4

8

LO FREQUENCY (MHz)

LO INPUT POWER (dBm)

5571 G14

5571 G15

5571 G13

Output IP3 vs LO Power

LO Feedthrough vs LO Power

Image Rejection vs LO Power

24

–38

–35

–40

–45

–50

–55

–60

22

20

18

16

14

12

10

–40

–42

–44

–46

–48

–50

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

f

= 2MHz

BB, 1

f

= 2.1MHz

BB, 2

–20 –16 –12 –8

–4

0

4

8

–20 –16 –12 –8

–4

0

4

8

–20 –16 –12 –8

–4

0

4

8

LO INPUT POWER (dBm)

5571 G16

5571 G17

5571 G18

5571f

5

LT5571

TYPICAL PERFORMANCE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC A LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency f = 2MHz, I & Q 90°

LO DC BB

shifted, without image or LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-

RF

BB

LO

RF(OUT)

tone measurements), unless otherwise noted. (Note 3)

RF CW Output Power, HD2 and

HD3 vs CW Baseband Voltage and

Temperature

RF CW Output Power, HD2 and

HD3 vs CW Baseband Voltage and

Supply Voltage

LO Feedthrough to RF Output vs

CW Baseband Voltage

0

–10

–20

–30

–40

–50

–60

–70

–80

20

–10

–20

–30

–40

–50

–60

–70

–80

10

–30

–35

–40

–45

RF

5V, –40°C

5V, 25°C

RF

10

0

5V, 85°C

4.5V, 25°C

5.5V, 25°C

0

–10

–20

–30

–40

–50

–60

5V

HD3

5.5V

4.5V

25°C

85°C

–40°C

–10

–20

–30

–40

–50

–60

HD3

HD2

HD2 = MAX POWER AT

+ 2 • f OR f – 2 • f

HD2 = MAX POWER AT

f

+ 2 • f OR f – 2 • f

LO

BB

LO

BB

LO BB LO

BB

HD3 = MAX POWER AT

f

+ 3 • f OR f – 3 • f

f

LO

+ 3 • f OR f – 3 • f

LO

BB

LO

BB

LO

0

1

2

3

4

5

)

0

1

2

3

4

5

)

0

1

2

3

4

5

I AND Q BASEBAND VOLTAGE (V

)

P-P, DIFF

5571 G21

5571 G19

5571 G20

RF Two-Tone Power (Each Tone),

IM2 and IM3 vs Baseband Voltage

and Temperature

RF Two-Tone Power (Each Tone),

IM2 and IM3 vs Baseband Voltage

and Supply Voltage

Image Rejection vs CW Baseband

Voltage

–46

–48

–50

–52

–54

–56

–58

10

0

10

0

25°C

85°C

5V

5V, –40°C

5V, 25°C

5.5V

–40°C

4.5V

5V, 85°C

RF

IM3

–10

–20

–30

–40

–50

–60

–70

–80

–10

–20

–30

–40

–50

–60

–70

–80

4.5V, 25°C

5.5V, 25°C

IM3

IM2 = POWER AT

f

+ 4.1MHz

f

LO

+ 4.1MHz

LO

IM3 = MAX POWER

AT f + 1.9MHz

IM3 = MAX POWER

AT f + 1.9MHz

LO

OR f + 2.2MHz

LO

IM2

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

BBI

BBQ

BBI

BBQ

0

1

2

3

4

5

0.1

1

10

0.1

1

10

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

P-P,DIFF

P-P,DIFF, EACH TONE

5571 G22

5571 G23

5571 G24

Voltage Gain Distribution

Noise Floor Distribution (no RF)

LO Leakage Distribution

25

20

15

10

5

25

20

15

10

5

20

10

0

–40°C

25°C

85°C

–40°C

25°C

85°C

–40°C

25°C

85°C

V

= 400mV

V

= 400mV

BB P-P

BB

P-P

0

–6.5 –6 –5.5 –5 –4.5 –4 –3.5 –3 –2.5 –2

–159.9 –159.6 –159.3 –159.0 –158.7

<–50 –48 –46 –44 –42 –40 –38 –36 –34

5571 G25

5571 G26

5571 G27

GAIN (dB)

NOISE FLOOR (dBm/Hz)

LO LEAKAGE (dBm)

5571f

6

LT5571

TYPICAL PERFORMANCE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 900MHz,

CC A LO

f

RF

= 902MHz, P = 0dBm. BBPI, BBMI, BBPQ, BBMQ CM input voltage = 0.5V , Baseband Input Frequency f = 2MHz, I & Q 90°

LO DC BB

shifted, without image or LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-

RF

BB

LO

RF(OUT)

tone measurements), unless otherwise noted. (Note 3)

LO Feedthrough and Image

Rejection vs Temperature After

Calibration at 25°C

Image Rejection Distribution

25

–40

–50

–60

–70

–80

–90

–40°C

25°C

85°C

V

= 400mV

P-P

CALIBRATED WITH P = 0dBm

RF

BB

f

= 2MHz, 0°

BBQ

BBI

= 2MHz, 90° + ϕ

CAL

20

15

10

5

LO FEEDTHROUGH

IMAGE REJECTION

0

<–60 –56 –52 –48 –44 –40 –36

–40

–20

0

20

40

60

80

5571 G28

IMAGE REJECTION (dBc)

TEMPERATURE (°C)

5571 G29

PIN FUNCTIONS

EN (Pin 1): Enable Input. When the Enable pin voltage is

higher than 1V, the IC is turned on. When the Enable volt-

age is less than 0.5V or if the pin is disconnected, the IC

is turned off. The voltage on the Enable pin should never

BBPQ,BBMQ(Pins7,5):BasebandinputsfortheQ-chan-

nel with about 90kΩ differential input impedance. These

pins should be externally biased at about 0.5V. Applied

common mode voltage must stay below 0.6V.

exceed V by more than 0.5V, in order to avoid possible

CC

V (Pins8,13):PowerSupply.Pins8and13areconnected

CC

damage to the chip.

toeachotherinternally.0.1µFcapacitorsarerecommended

GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,

15 and the Exposed Pad 17 are connected to each other

internally. Pins 2 and 4 are connected to each other inter-

nally and function as the ground return for the LO signal.

Pins 10 and 12 are connected to each other internally and

functionasthegroundreturnfortheon-chipRFbalun. For

best RF performance, Pins 2, 4, 6, 9, 10, 12, 15 and the

Exposed Pad, Pin 17, should be connected to the printed

circuit board ground plane.

for decoupling to ground on each of these pins.

RF (Pin 11): RF Output. The RF output is an AC-coupled

single-ended output with approximately 50Ω output im-

pedance at RF frequencies. Externally applied DC voltage

should be within the range –0.5V to (V + 0.5V) in order

CC

to avoid turning on ESD protection diodes.

BBPI,BBMI(Pins14,16):BasebandinputsfortheI-chan-

nel with about 90kΩ differential input impedance. These

pins should be externally biased at about 0.5V. Applied

common mode voltage must stay below 0.6V.

LO(Pin3):LOInput.TheLOinputisanAC-coupledsingle-

ended input with approximately 50Ω input impedance at

RF frequencies. Externally applied DC voltage should be

within the range –0.5V to (V + 0.5V) in order to avoid

turning on ESD protection diodes.

Exposed Pad (Pin 17): Ground. The Exposed Pad must

be soldered to the PCB.

CC

5571f

7

LT5571

BLOCK DIAGRAM

V

CC

8

13

BBPI 14

BBMI 16

V-I

11 RF

0°

90°

BALUN

BBPQ

BBMQ

7

5

1

EN

2

4

6

9

3

10

12

15

17

5571 BD

GND

LO

GND

APPLICATIONS INFORMATION

The LT5571 consists of I and Q input differential voltage-

to-currentconverters,IandQup-conversionmixers,anRF

signal combiner/balun, an LO quadrature phase generator

and LO buffers.

pins should not be left ﬂoating because the internal PNP’s

base current will pull the common mode voltage higher

than the 0.6V limit. This condition may damage the part.

The PNP’s base current is about 24µA in normal opera-

tion. On the LT5571 demo board, external 50Ω resistors

to ground are added to each baseband input to prevent

this condition and to serve as a termination resistance for

the baseband connections.

External I and Q baseband signals are applied to the dif-

ferential baseband input pins, BBPI, BBMI, and BBPQ,

BBMQ.Thesevoltagesignalsareconvertedtocurrentsand

translated to RF frequency by means of double-balanced

up-converting mixers. The mixer outputs are combined

in an RF output balun, which also transforms the output

impedance to 50Ω. The center frequency of the resulting

RF signal is equal to the LO signal frequency. The LO input

drives a phase shifter which splits the LO signal into in-

phaseandquadratureLOsignals.TheseLOsignalsarethen

applied to on-chip buffers which drive the up-conversion

mixers. Both the LO input and RF output are single-ended,

50Ω-matched and AC-coupled.

It is recommended that the I/Q signals be DC-coupled to

the LT5571. An applied common mode voltage level at the

I and Q inputs of about 0.5V will maximize the LT5571’s

dynamic range. Some I/Q generators allow setting the

common mode voltage independently. For a 0.5V com-

mon mode voltage setting, the common-mode voltage of

those generators must be set to 0.5V to create the desired

0.5V bias, when an external 50Ω is present in the setup

(See Figure 2).

Thepartshouldbedrivendifferentially;otherwise,theeven-

order distortion products will degrade the overall linearity

severely. Typically, a DAC will be the signal source for the

LT5571. A reconstruction ﬁlter should be placed between

the DAC output and the LT5571’s baseband inputs.

Baseband Interface

Thebasebandinputs(BBPI,BBMI),(BBPQ,BBMQ)present

a differential input impedance of about 90kΩ. At each of

the four baseband inputs, a capacitor of 1.8pF to ground

and a PNP emitter follower is incorporated (see Figure 1),

which limits the baseband bandwidth to approximately

200MHz (–1dB point), if driven by a 50Ω source. The

circuit is optimized for a common mode voltage of 0.5V

which should be externally applied. The baseband input

In Figure 3 a typical baseband interface is shown, includ-

ing a ﬁfth-order low-pass ladder ﬁlter. For each baseband

pin, a 0 to 1V swing is developed corresponding to a DAC

output current of 0mA to 20mA. The maximum sinusoidal

single side-band RF output power is about +5.8dBm for

5571f

8

LT5571

APPLICATIONS INFORMATION

C

LT5571

RF

V

= 5V

CC

BALUN

FROM

Q-CHANNEL

LOMI

LOPI

BBPI

1.8pF

V

= 0.5V

BBMI

CM

5571 F01

GND

Figure 1. Simpliﬁed Circuit Schematic of the LT5571 (Only I-Half is Drawn)

50Ω

LT5571

0.5V

0.5005V

DC

50Ω

EXTERNAL

LOAD

+

1V

20µA

DC

–

50Ω

GENERATOR

5571 F02

Figure 2. DC Voltage Levels for a Generator Programmed at 0.5V for a 50Ω Load Without and with the LT5571 as a Load

DC

C

LT5571

MAX RF

+5.8dBm

V

CC

BALUN

5V

FROM

Q-CHANNEL

LOMI

LOPI

L1A

L2A

0.5V

0mA TO 20mA

DC BBPI

R1A

R2A

100Ω

C1

L1B

C2

L2B

C3

DAC

1.8pF

R1B

100Ω

R2B

100Ω

20mA TO 0mA

BBMI

DC

GND

5571 F03

GND

Figure 3. LT5571 Baseband Interface with 5th Order Filter and 0.5V DAC (Only I Channel is Shown)

CM

5571f

9

LT5571

APPLICATIONS INFORMATION

Table 1. Typical Performance Characteristics vs V for f = 900MHz, P = 0dBm

CM

LO

OIP2 (dBm)

LO

V

(V)

0.1

0.2

0.25

0.3

0.4

0.5

0.6

I

(mA)

55.3

G (dB)

OP1dB (dBm)

OIP3 (dBm)

9.2

NFloor (dBm/Hz)

–163.6

LOFT (dBm)

–53.6

IR (dBc)

37.0

40.4

43.5

43.9

45.1

45.4

45.6

CM

CC

V

–4.5

–3.9

–3.7

–3.6

–3.5

–3.6

–3.7

–1.5

2.0

3.4

4.5

6.3

7.9

8.4

53.4

51.7

51.9

52.1

53.1

53.0

53.7

65.3

70.3

75.7

86.4

97.1

108.1

11.2

13.3

15.6

18.7

20.6

22.1

–161.8

–161.2

–160.5

–159.6

–158.7

–157.9

–50.3

–49.0

–47.7

–45.3

–43.1

–41.2

full 0V to 1V swing on each baseband input (2V

).

PEAK

50Ω, and the recommended LO input power window is

P-P,DIFF

This maximum RF output level is limited by the 0.5V

–2dBm to 2dBm. For P < –2dBm input power, the gain,

LO

maximum baseband swing possible for a 0.5V com-

OIP2,OIP3,dynamic-range(indBc/Hz)andimagerejection

DC

mon-mode voltage level (assuming no negative supply

will degrade, especially at T = 85°C.

A

bias voltage is available).

HarmonicspresentontheLOsignalcandegradetheimage

rejection,becausetheyintroduceasmallexcessphaseshift

in the internal phase splitter. For the second (at 1.8GHz)

and third harmonics (at 2.7GHz) at –20dBc level, the in-

troduced signal at the image frequency is about –61dBc

or lower, corresponding to an excess phase shift much

less than 1 degree. For the second and third harmonics at

–10dBc, still the introduced signal at the image frequency

isabout–51dBc. Higherharmonicsthanthethirdwillhave

less impact. The LO return loss typically will be better than

11dB over the 750MHz to 1GHz range. Table 2 shows the

LO port input impedance vs frequency.

It is possible to bias the LT5571 to a common mode

voltage level other than 0.5V. Table 1 shows the typical

performance for different common mode voltages.

LO Section

The internal LO input ampliﬁer performs single-ended to

differential conversion of the LO input signal. Figure 4

shows the equivalent circuit schematic of the LO input.

The internal differential LO signal is split into in-phase and

quadrature (90° phase shifted) signals to drive LO buffer

sections. These buffers drive the double balanced I and

Q mixers. The phase relationship between the LO input

and the internal in-phase LO and quadrature LO signals

is ﬁxed, and is independent of start-up conditions. The

phase shifters are designed to deliver accurate quadrature

signals for an LO frequency near 900MHz. For frequen-

cies signiﬁcantly below 750MHz or above 1100MHz, the

quadrature accuracy will diminish, causing the image

rejection to degrade. The LO pin input impedance is about

Table 2. LO Port Input Impedance vs Frequency for EN = High

and P = 0dBm

LO

S

FREQUENCY

(MHz)

INPUT IMPEDANCE

11

(Ω)

Mag

Angle

97

40

500

600

700

800

900

1000

1100

1200

47.2 + j11.7

58.4 + j8.3

65.0 – j0.6

66.1 – j12.2

60.7 – j22.5

53.3 – j25.1

48.4 – j25.1

42.7 – j26.4

0.123

0.108

0.131

0.173

0.221

0.239

0.248

0.285

–2

–31

–53

–69

–79

–89

V

CC

20pF

LO

INPUT

The return loss S on the LO port can be improved at

11

Z

≈ 60Ω

IN

lower frequencies by adding a shunt capacitor. The input

impedance of the LO port is different if the part is in

shut-down mode. The LO input impedance for EN = Low

is given in Table 3.

5571 F04

Figure 4. Equivalent Circuit Schematic of the LO Input

5571f

10

LT5571

APPLICATIONS INFORMATION

For EN = Low the S is given in Table 6.

Table 3. LO Port Input Impedance vs Frequency for EN = Low

22

and P = 0dBm

LO

Table 6. RF Port Output Impedance vs Frequency for EN = Low

S

11

FREQUENCY

(MHz)

INPUT IMPEDANCE

S

22

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

(Ω)

Mag

Angle

83

(Ω)

Mag

Angle

166

144

120

89

–38

–99

–117

–130

500

600

700

800

900

1000

1100

1200

35.6 + j42.1

65.5 + j70.1

163 + j76.3

188 – j95.2

72.9 – j114

34.3 – j83.5

21.6 – j63.3

16.4 – j50.5

0.467

0.531

0.602

0.654

0.692

0.715

0.726

0.727

500

600

700

800

900

1000

1100

1200

21.5 + j5.0

26.9 + j11.8

36.5 + j16.0

48.8 + j11.2

52.8 – j2.2

46.6 – j11.5

39.7 – j13.9

35.0 – j13.0

0.403

0.333

0.239

0.113

0.035

0.123

0.191

0.232

46

14

–13

–36

–56

–73

–86

RF Section

To improve S for lower frequencies, a series capacitor

22

can be added to the RF output. At higher frequencies, a

Afterup-conversion,theRFoutputsoftheIandQmixersare

combined. An on-chip balun performs internal differential

tosingle-endedoutputconversion,whiletransformingthe

output signal impedance to 50Ω. Table 4 shows the RF

port output impedance vs frequency.

shunt inductor can improve the S . Figure 5 shows the

22

equivalent circuit schematic of the RF output.

Note that an ESD diode is connected internally from the

RF output to ground. For strong output RF signal levels

(higher than 3dBm) this ESD diode can degrade the lin-

earity performance if an external 50Ω termination imped-

ance is connected directly to ground. To prevent this, a

coupling capacitor can be inserted in the RF output line.

This is strongly recommended during 1dB compression

measurements.

Table 4. RF Port Output Impedance vs Frequency for EN = High

and P = 0dBm

LO

S

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

22

(Ω)

Mag

Angle

165

143

119

91

500

600

700

800

900

1000

1100

1200

22.2 + j5.2

28.4 + j11.7

38.8 + j14.3

49.4 + j6.8

49.4 – j5.8

42.7 – j11.7

36.9 – j12.6

33.2 – j11.3

0.390

0.311

0.202

0.068

0.058

0.149

0.207

0.241

V

CC

–92

21pF

7nH

–115

–128

–138

RF

OUTPUT

47Ω

1pF

5571 F05

The RF output S with no LO power applied is given in

22

Table 5.

Figure 5. Equivalent Circuit Schematic of the RF Output

Table 5. RF Port Output Impedance vs Frequency for EN = High

and No LO Power Applied

Enable Interface

S

22

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

Figure 6 shows a simpliﬁed schematic of the EN pin inter-

face. The voltage necessary to turn on the LT5571 is 1V.

To disable (shut down) the chip, the enable voltage must

be below 0.5V. If the EN pin is not connected, the chip is

disabled. This EN = Low condition is guaranteed by the

75kΩ on-chip pull-down resistor.

(Ω)

Mag

Angle

165

143

123

145

–123

–131

–140

–148

500

600

700

800

900

1000

1100

1200

22.9 + j5.3

30.0 + j11.2

40.6 + j11.2

47.3 + j1.9

44.2 – j7.4

38.4 – j10.4

34.2 – j10.2

31.7 – j8.7

0.377

0.283

0.160

0.034

0.099

0.175

0.221

0.246

It is important that the voltage at the EN pin does not

exceed V by more than 0.5V. If this should occur, the

CC

5571f

11

LT5571

APPLICATIONS INFORMATION

V

overheating. R1 (optional) limits the EN pin current in the

CC

event that the EN pin is pulled high while the V inputs

CC

EN

are low. The application board PCB layouts are shown in

Figures 8 and 9.

75k

25k

5571 F06

Figure 6. EN Pin Interface

full chip supply current could be sourced through the EN

pin ESD protection diodes, which are not designed for this

purpose. Damage to the chip may result.

Evaluation Board

Figure 7 shows the evaluation board schematic. A good

ground connection is required for the LT5571’s Exposed

Pad. If this is not done properly, the RF performance will

degrade.Additionally,theExposedPadprovidesheatsink-

ing for the part and minimizes the possibility of the chip

J1

J2

BBIM

BBIP

R2

49.9Ω

R5

49.9Ω

Figure 8. Component Side of Evaluation Board

V

CC

C1

16 15

BBMI GND

EN

14

BBPI

13

100nF

R1

100Ω

V

CC

1

2

3

4

12

V

EN

GND

RF

CC

J3

11

10

9

RF

OUT

GND

LO

J4

LT5571

LO IN

GND

17

BBMQ GND BBPQ

V

CC

5

6

7

8

C2

100nF

J5

J6

BBQM

R3

49.9Ω

BBQP

R4

49.9Ω

5571 F07

BOARD NUMBER: DC944A

Figure 7. Evaluation Circuit Schematic

Figure 9. Bottom Side of Evaluation Board

5571f

12

LT5571

APPLICATIONS INFORMATION

Application Measurements

The ACPR performance is sensitive to the amplitude

mismatch of the BBIP and BBIM (or BBQP and BBQM)

input voltage. This is because a difference in AC voltage

amplitudewillgiverisetoadifferenceinamplitudebetween

theeven-orderharmonicproductsgeneratedintheinternal

V-I converter. As a result, they will not cancel out entirely.

Therefore,itisimportanttokeeptheamplitudesattheBBIP

and BBIM (or BBQP and BBQM) as equal as possible.

TheLT5571isrecommendedforbase-stationapplications

using various modulation formats. Figure 10 shows a

typical application.

Figure 11 shows the ACPR performance for CDMA2000

usingoneandthreechannelmodulation.Figures12and13

illustrate the 1- and 3-channel CDMA2000 measurement.

To calculate ACPR, a correction is made for the spectrum

analyzer’s noise ﬂoor (Application Note 99).

LO feedthrough and image rejection performance may

be improved by means of a calibration procedure. LO

feedthrough is minimized by adjusting the differential DC

offsets at the I and the Q baseband inputs. Image rejection

can be improved by adjusting the amplitude and phase

difference between the I and the Q baseband inputs. The

LO feedthrough and Image Rejection can also change

as a function of the baseband drive level, as depicted in

Figure 14.

If the output power is high, the ACPR will be limited by the

linearity performance of the part. If the output power is

low, the ACPR will be limited by the noise performance of

the part. In the middle, an optimum ACPR is obtained.

BecauseoftheLT5571’sveryhighdynamic-range,thetest

equipment can limit the accuracy of the ACPR measure-

ment. Consult Design Note 375 or the factory for advice

on ACPR measurement if needed.

–40

–50

–60

–70

–80

–90

–110

–120

–130

–140

–150

–160

DOWNLINK TEST

MODEL 64 DPCH

5V

8, 13

100nF

3-CH ACPR

V

CC

LT5571

14

16

×2

RF = 620MHz

TO 1100MvHz

1-CH

I-DAC

V-I

I-CH

3-CH AltCPR

ACPR

11

PA

0°

1

EN

90°

BALUN

1-CH NOISE

Q-CH

V-I

7

5

1-CH AltCPR

3-CH NOISE

Q-DAC

BASEBAND

GENERATOR

5571 F10

–30

–25

–20

–15

–10

–5

0

3

VCO/SYNTHESIZER

2, 4, 6, 9, 10, 12, 15, 17

RF OUTPUT POWER PER CARRIER (dBm)

5571 F11

Figure 10. 620MHz to 1.1GHz Direct Conversion Transmitter Application

Figure 11. CDMA2000 ACPR, ALTCPR and Noise vs

RF Output Power at 900MHz for 1 and 3 Carriers

–30

–40

–30

–40

20

DOWNLINK

TEST MODEL

64 DPCH

DOWNLINK TEST

MODEL 64 DPCH

P

RF

10

0

–50

–10

–20

–30

–40

–50

–60

–70

–80

–90

–60

25°C

85°C

–40°C

SPECTRUM

ANALYSER

NOISE

UN-

CORRECTED

SPECTRUM

–70

LO FT

–80

UNCORRECTED

SPECTRUM

CORRECTED

SPECTRUM

FLOOR

–90

IR

–100

–110

–120

–130

–100

–110

–120

–130

f

= 2MHz, 0°

BBI

CC

V

= 5V, f

= 2MHz, 90°

BBQ

EN = HIGH, f = f + f

RF BB LO

= 900MHz, P = 0dBm

CORRECTED SPECTRUM

f

LO

SPECTRUM ANALYSER NOISE FLOOR

LO

0

1

2

3

4

5

894

896

898

900

902

904

906

896.25 897.75 899.25 900.75 902.25 903.75

I AND Q BASEBAND VOLTAGE (V

)

RF FREQUENCY (MHz)

P-P,DIFF

5571 F13

5571 F12

5571 F14

Figure 12. 1-Channel CDMA2000 Spectrum Figure 13. 3-Channel CDMA2000 Spectrum

Figure 14. Image Rejection and LO Feed-

Through vs Baseband Drive Voltage After

Calibration at 25°C

5571f

13

LT5571

APPLICATIONS INFORMATION

Example: RFID Application

the RFID baseband signals in the fastest mode (TARI =

6.25µs, see [1]) signiﬁcantly, and at the same time achiev-

ing enough alias attenuation while using a 32MHz sampling

frequency. The resulting Alt80-CPR (the alias frequency at

897.875MHz falls outside the RF frequency range of Figure

16a) is –92dBc for TARI = 6.25µs. The SSB-ASK output

signal spectrum is plotted in Figure 16a, together with the

Dense-Interrogator Transmit mask [1] for TARI = 25µs. The

corresponding envelope representation is given in Figure

Figure 15 shows the interface between a current drive DAC

and the LT5571 for RFID applications. The SSB-ASK mode

requiresanI/Qmodulatortogeneratethedesiredspectrum.

According to [1], the LT5571 is capable of meeting the

“Dense-Interrogator” requirements with reduced supply

current. A V = 0.25V was chosen in order to save 30mA

CM

current, resulting in a modulator supply current of about

73mA. This is achieved by sourcing 5mA average DAC

DC

16b. The Alt1-CPR can be increased by using a higher V

CM

current into 50Ω resistors R1A and R1B. As anti-aliasing

ﬁlter, anRCRCﬁlterwaschosenusingR1A, R1B, C1A, C1B,

R2A, R2B, C2A and C2B. This results in a second-order

passive low-pass ﬁlter with –3dB cutoff at 790kHz. This

ﬁlter cutoff is chosen high enough that it will not affect

at the cost of extra supply current or a lower baseband drive

at the cost of lower RF output power. The center frequency

of the channel is chosen at 865.9MHz (“channel 2”), while

the LO frequency is chosen at 865.875MHz.

C

LT5571

RF

V

CC

BALUN

5V

FROM

Q-CHANNEL

LOMI

LOPI

R2A

250Ω

0.25V

0mA TO 10mA

DC

DC BBPI

C1A

2.2nF

C2A

470pF

R1A

50Ω

DAC

1.8pF

GND

C1B

2.2nF

C2B

470pF

R1B

50Ω

10mA TO 0mA

BBMI

DC

R2B

250Ω

DC

5571 F15

GND

Figure 15. Recommended Baseband Interface for RFID Applications (Only I Channel is Drawn)

0.3

0.2

0

–10

–20

–30

–40

–50

–60

–70

–80

–90

–100

0.1

0

–0.1

–0.2

–0.3

0

50

100

150

200

250

865.4

865.6

865.8

FREQUENCY (MHz)

CH BANDWIDTH: 100kHz ALT1 UP: –71.15dBc

866.0 866.2 866.4

TIME (µs)

5571 F16b

CH SPACING: 100kHz

CH PWR: –4.85dBm

ACP UP: –33.74dBc

ACP LOW: –37.76dBc

ALT1 LOW: –64.52dBc

ALT2 UP: –72.80dBc

ALT2 LOW: –72.42dBc

5571 F16a

Figure 16a and 16b. RFID SSB-ASK Spectrum with Mask and Corresponding RF Envelope for TARI = 25µs

[1] EPC Radio Frequency Identity Protocols, Class-1 Generation-2 UHF RFID Protocol for

Communications at 860MHz – 960MHz, version 1.0.9.

5571f

14

LT5571

PACKAGE DESCRIPTION

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

0.72 0.05

4.35 0.05

2.90 0.05

2.15 0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

PIN 1 NOTCH R = 0.20 TYP

OR 0.35 × 45° CHAMFER

0.75 0.05

R = 0.115

TYP

4.00 0.10

(4 SIDES)

15

16

0.55 0.20

PIN 1

TOP MARK

(NOTE 6)

1

2

2.15 0.10

(4-SIDES)

(UF16) QFN 10-04

0.200 REF

0.30 0.05

0.65 BSC

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. DRAWING NOT TO SCALE

3. ALL DIMENSIONS ARE IN MILLIMETERS

4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

5. EXPOSED PAD SHALL BE SOLDER PLATED

6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION

ON THE TOP AND BOTTOM OF PACKAGE

5571f

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-

tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.

15

LT5571

RELATED PARTS

PART NUMBER

Infrastructure

LT5514

DESCRIPTION

COMMENTS

Ultralow Distortion, IF Ampliﬁer/ADC Driver

with Digitally Controlled Gain

850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range

LT5515

LT5516

1.5GHz to 2.5GHz Direct Conversion Quadrature 20dBm IIP3, Integrated LO Quadrature Generator

Demodulator

0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator

Demodulator

LT5517

LT5518

40MHz to 900MHz Quadrature Demodulator

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

21dBm IIP3, Integrated LO Quadrature Generator

22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO

Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz

LT5519

LT5520

LT5521

LT5522

LT5524

LT5525

LT5526

LT5527

LT5528

LT5558

0.7GHz to 1.4GHz High Linearity Upconverting 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,

Mixer Single-Ended LO and RF Ports Operation

1.3GHz to 2.3GHz High Linearity Upconverting 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,

Mixer

Single-Ended LO and RF Ports Operation

10MHz to 3700MHz High Linearity

Upconverting Mixer

24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO

Port Operation

600MHz to 2.7GHz High Signal Level

Downconverting Mixer

4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF

and LO Ports

Low Power, Low Distortion ADC Driver with

Digitally Programmable Gain

450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control

High Linearity, Low Power Downconverting

Mixer

Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA

CC

High Linearity, Low Power Downconverting

Mixer

3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,

CC

–65dBm LO-RF Leakage

400MHz to 3.7GHz High Signal Level

Downconverting Mixer

IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, I = 78mA,

CC

Conversion Gain = 2dB.

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband

DC

Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz

600MHz to 1100MHz High Linearity Direct

Quadrature Modulator

22.4dBm OIP3 at 900MHz, –158dBm/Hz Noise Floor, 3kΩ, 2.1V Baseband

DC

Interface, 3-Ch CDMA2000 ACPR = –70.4dBc at 900MHz

LT5560

LT5568

Ultra-Low Power Active Mixer

700MHz to 1050MHz High Linearity Direct

Quadrature Modulator

10mA Supply Current, 10dBm IIP3, 10dB NF, Usable as Up- or Down-Converter.

22.9dBm OIP3 at 850MHz, –160.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband

DC

Interface, 3-Ch CDMA2000 ACPR = –71.4dBc at 850MHz

LT5572

1.5GHz to 2.5GHz High Linearity Direct

Quadrature Modulator

21.6dBm OIP3 at 2GHz, –158.6dBm/Hz Noise Floor, High-Ohmic 0.5V Baseband

DC

Interface, 4-Ch W-CDMA ACPR = –67.7dBc at 2.14GHz

RF Power Detectors

LTC^®5505

LTC5507

LTC5508

LTC5509

RF Power Detectors with >40dB Dynamic Range 300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply

100kHz to 1000MHz RF Power Detector

300MHz to 7GHz RF Power Detector

300MHz to 3GHz RF Power Detector

100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply

44dB Dynamic Range, Temperature Compensated, SC70 Package

36dB Dynamic Range, Low Power Consumption, SC70 Package

LTC5530

LTC5531

LTC5532

300MHz to 7GHz Precision RF Power Detector Precision V

Offset Control, Shutdown, Adjustable Gain

Offset Control, Shutdown, Adjustable Offset

Offset Control, Adjustable Gain and Offset

OUT

LT5534

50MHz to 3GHz Log RF Power Detector with

60dB Dynamic Range

1dB Output Variation over Temperature, 38ns Response Time, Log Linear

Response

LTC5536

LT5537

Precision 600MHz to 7GHz RF Power Detector 25ns Response Time, Comparator Reference Input, Latch Enable Input,

with Fast Comparator Output

–26dBm to +12dBm Input Range

Wide Dynamic Range Log RF/IF Detector

Low Frequency to 1GHz, 83dB Log Linear Dynamic Range

5571f

LT 1206 • PRINTED IN USA

LinearTechnology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

16

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com


型号：	LT5571EUF
厂家：	Linear
描述：	620MHz - 1100MHz High Linearity Direct Quadrature Modulator 了620MHz - 1100MHz高线性度直接正交调制器
文件：	总16页 (文件大小：316K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LT5571EUF [Linear]

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