LT5572EUF#TRPBF_技术文档

LT5572

1.5GHz to 2.5GHz

High Linearity Direct

Quadrature Modulator

U

DESCRIPTIO

FEATURES

■

Direct Conversion from Baseband to RF

The LT5572 is a direct I/Q modulator designed for high

performance wireless applications, including wireless

infrastructure. It allows direct modulation of an RF signal

usingdifferentialbasebandIandQsignals.ItsupportsPHS,

GSM, EDGE, TD-SCDMA, CDMA, CDMA2000, W-CDMA

and other systems. It may also be conﬁgured as an image

reject up-converting mixer by applying 90° phase-shifted

signals to the I and Q inputs. The high impedance I/Q

baseband inputs consist of voltage-to-current converters

that in turn drive double-balanced mixers. The outputs of

these mixers are summed and applied to an on-chip RF

transformer which converts the differential mixer signals

to a 50Ω single-ended output. The four balanced I and Q

baseband input ports are intended for DC coupling from a

source with a common mode voltage level of about 0.5V.

The LO path consists of an LO buffer with single-ended

input and precision quadrature generators that produce

the LO drive for the mixers. The supply voltage range is

4.5V to 5.25V.

■

High Output: –2.5dB Conversion Gain

■

High OIP3: +21.6dBm at 2GHz

■

Low Output Noise Floor at 20MHz Offset:

No RF: –158.6dBm/Hz

P

OUT

= 4dBm: –152.5dBm/Hz

■

Low Carrier Leakage: –39.4dBm at 2GHz

High Image Rejection: –41.2dBc at 2GHz

4-Channel W-CDMA ACPR: –67.7dBc at 2.14GHz

Integrated LO Buffer and LO Quadrature Phase

Generator

■

50Ω AC-Coupled Single-Ended LO and RF Ports

High Impedance DC Interface to Baseband Inputs

with 0.5V Common Mode Voltage

16-Lead QFN 4mm × 4mm Package

U

■

APPLICATIO S

■

Infrastructure Tx for DCS, PCS and UMTS Bands

■

Image Reject Up-Converters for DCS, PCS and UMTS

, LTC and LT are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

Bands

■

Low Noise Variable Phase Shifter for 1.5GHz to

2.5GHz Local Oscillator Signals

U

TYPICAL APPLICATIO

W-CDMA ACPR, AltCPR and Noise

vs RF Output Power at 2.14GHz for

1, 2 and 4 Channels

Direct Conversion Transmitter Application

–50

–60

–70

–80

–90

–125

–135

–145

–155

–165

5V

DOWNLINK TEST

MODEL 64 DPCH

8, 13

100nF

V

LT5572

14

16

×2

CC

RF = 1.5GHz

TO 2.5GHz

4-CH ACPR

4-CH AltCPR

2-CH ACPR

1-CH

ACPR

I-DAC

V-I

I-CH

11

PA

0°

1

EN

90°

BALUN

Q-CH

V-I

2-CH AltCPR

7

5

1-CH AltCPR

1-CH NOISE

Q-DAC

2-CH NOISE

–15

BASEBAND

GENERATOR

4-CH NOISE

–25

–20

5572 TA01a

3

VCO/SYNTHESIZER

2, 4, 6, 9, 10, 12, 15, 17

–30

–10

–5

RF OUTPUT POWER PER CARRIER (dBm)

5572 TA01b

5572f

1

LT5572

W W U W

U

W

U

ABSOLUTE AXI U RATI GS

PACKAGE/ORDER I FOR ATIO

(Note 1)

TOP VIEW

Supply Voltage.........................................................5.5V

Common Mode Level of BBPI, BBMI

and BBPQ, BBMQ.....................................................0.6V

Voltage on Any Pin

16 15 14 13

EN

GND

LO

1

2

3

4

12 GND

11 RF

Not to Exceed........................–500mV to (V + 500mV)

CC

17

GND

10

9

Operating Ambient Temperature Range

GND

(Note 2).................................................... –40°C to 85°C

Storage Temperature Range................... –65°C to 125°C

5

6

7

8

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

= 125°C, θ = 37°C/W

T

JMAX

JA

EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB

ORDER PART NUMBER

LT5572EUF

UF PART MARKING

5572

Order Options Tape and Reel: Add #TR

Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF

Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts speciﬁed with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 2GHz, f = 2002MHz, P = 0dBm.

CC

A

LO

RF

LO

BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection).

DC

P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

SYMBOL

RF Output (RF)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

f

RF

RF Frequency Range

–3dB Bandwidth

–1dB Bandwidth

1.5 to 2.5

1.7 to 2.15

GHz

S

RF Output Return Loss

RF Output Noise Floor

EN = High (Note 6)

EN = Low (Note 6)

–13.5

–12.5

dB

22(ON)

22(OFF)

NFloor

No Input Signal (Note 8)

–158.6

–152.5

–152.2

dBm/Hz

P

OUT

P

OUT

= 4dBm (Note 9)

= 4dBm (Note 10)

G

Conversion Voltage Gain

Output Power

20 • Log (V

/V )

–2.5

1.4

dB

dBm

dB

V

OUT(50Ω) IN(DIFF) I or Q

P

OUT

1V

PP(DIFF)

CW Signal, I and Q

G

3 • LO Conversion Gain Difference

Output 1dB Compression

Output 2nd Order Intercept

Output 3rd Order Intercept

Image Rejection

(Note 17)

(Note 7)

–29.5

9.3

3LO VS LO

OP1dB

OIP2

OIP3

IR

dBm

dBc

(Notes 13, 14)

(Notes 13, 15)

(Note 16)

53.2

21.6

–41.2

LOFT

Carrier Leakage

(LO Feedthrough)

EN = High, P = 0dBm (Note 16)

–39.4

–58

dBm

LO

EN = Low, P = 0dBm (Note 16)

LO

5572f

2

LT5572

ELECTRICAL CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 2GHz, f = 2002MHz, P = 0dBm.

CC

A

LO

RF

LO

BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency = 2MHz, I and Q 90° shifted (upper sideband selection).

DC

P

= –10dBm, unless otherwise noted. (Note 3)

RF(OUT)

SYMBOL

LO Input (LO)

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

f

LO Frequency Range

1.5 to 2.5

0

GHz

dBm

dB

LO

P

S

LO Input Power

–10

5

LO

LO Input Return Loss

EN = High, P = 0dBm (Note 6)

–15

11(ON)

11(OFF)

LO

LO Input Return Loss

EN = Low (Note 6)

at 2GHz (Note 5)

–5.3

14.5

25

dB

NF

LO Input Referred Noise Figure

LO to RF Small-Signal Gain

LO Input 3rd Order Intercept

dB

LO

G

dB

LO

IIP3

–0.5

dBm

LO

Baseband Inputs (BBPI, BBMI, BBPQ, BBMQ)

BW

Baseband Bandwidth

–3dB Bandwidth

460

0.5

MHz

V

BB

V

CMBB

DC Common Mode Voltage

Differential Input Resistance

Baseband Static Input Current

Carrier Feedthrough to BB

Input 1dB Compression Point

I/Q Absolute Gain Imbalance

I/Q Absolute Phase Imbalance

Externally Applied (Note 4)

0.6

R

IN

90

kΩ

µA

I

(Note 4)

–20

–39

2.8

DC(IN)

P

LOBB

P

OUT

= 0 (Note 4)

dBm

IP1dB

Differential Peak-to-Peak (Notes 7, 18)

V

P-P(DIFF)

ΔG

0.07

0.9

dB

I/Q

Δϕ

Deg

Power Supply (V

)

CC

V

Supply Voltage

4.5

5

5.25

145

50

V

mA

µA

µs

CC

I

t

Supply Current

EN = High

120

CC(ON)

CC(OFF)

ON

Supply Current, Sleep Mode

Turn-On Time

EN = 0V

EN = Low to High (Note 11)

EN = High to Low (Note 12)

0.25

1.3

Turn-Off Time

µs

OFF

Enable (EN), Low = Off, High = On

Enable

Sleep

Input High Voltage

Input High Current

Input Low Voltage

EN = High

EN = 5V

1

V

µA

V

230

EN = Low

0.5

Note 11: RF power is within 10% of ﬁnal value.

Note 12: RF power is at least 30dB lower than in the ON state.

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

Note 2: Speciﬁcations over the –40°C to 85°C temperature range are

assured by design, characterization and correlation with statistical process

controls.

Note 3: Tests are performed as shown in the conﬁguration of Figure 7.

Note 4: At each of the four baseband inputs BBPI, BBMI, BBPQ and BBMQ.

Note 13: Baseband is driven by 2MHz and 2.1MHz tones. Drive level is set

in such a way that the two resulting RF tones are –10dBm each.

Note 14: IM2 measured at LO frequency + 4.1MHz

Note 15: IM3 measured at LO frequency + 1.9MHz and LO frequency +

2.2MHz.

Note 5: V

– V

= 1V , V

– V

= 1V .

BBMQ DC

Note 16: Amplitude average of the characterization data set without image

BBPI

BBMI

DC BBPQ

or LO feedthrough nulling (unadjusted).

Note 6: Maximum value within –1dB bandwidth.

Note 17: The difference in conversion gain between the spurious signal

at f = 3 • LO – BB versus the conversion gain of the desired signal at

f = LO + BB for BB = 2MHz and LO = 2GHz.

Note 7: An external coupling capacitor is used in the RF output line.

Note 8: At 20MHz offset from the LO signal frequency.

Note 9: At 20MHz offset from the CW signal frequency.

Note 10: At 5MHz offset from the CW signal frequency.

Note 18: The input voltage corresponding to the output P1dB.

5572f

3

LT5572

U W

V

BB

= 5V, EN = High, T = 25°C, f = 2.14GHz,

A LO

TYPICAL PERFOR A CE CHARACTERISTICS

CC

P

= 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency f = 2MHz, I and Q 90° shifted, without image or

LO

DC

LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-tone measurements),

RF

BB

LO

RF(OUT)

unless otherwise noted. (Note 3)

RF Output Power vs LO Frequency

at 1V Differential Baseband

P-P

Voltage Gain vs LO Frequency

Supply Current vs Supply Voltage

Drive

0

–2

–4

–6

140

130

120

110

100

4

2

85°C

0

25°C

–2

–8

–10

–12

–4

–6

–8

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

–40°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

2.1

LO FREQUENCY (GHz)

2.5

2.7

1.3 1.5

1.7 1.9

2.3

5

2.1

1.7 1.9

LO FREQUENCY (GHz)

2.5

2.7

4.5

5.5

1.3 1.5

2.3

SUPPLY VOLTAGE (V)

5572 G03

5572 G01

5572 G02

Output 1dB Compression

vs LO Frequency

Output IP3 vs LO Frequency

Output IP2 vs LO Frequency

26

12

10

8

65

60

55

50

f

= 2MHz

= 2.1MHz

f

= f

+ f

BB1

BB2

IM2 BB1 BB2 LO

= 2MHz

BB1

24

22

= 2.1MHz

BB2

20

18

16

14

12

6

4

2

0

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

10

45

1.5 1.7

2.1 2.3 2.5 2.7

1.3

1.9

2.1

LO FREQUENCY (GHz)

2.5

2.7

1.3 1.5

1.7 1.9

2.3

1.3 1.5

1.7 1.9 2.1 2.3 2.5 2.7

LO FREQUENCY (GHz)

5572 G04

5572 G06

5572 G05

LO Feedthrough to RF Output

vs LO Frequency

2 • LO Leakage to RF Output

vs 2 • LO Frequency

3 • LO Leakage to RF Output

vs 3 • LO Frequency

–35

–40

–45

–50

–55

–60

–30

–20

–35

–40

–25

–30

–45

–50

–55

–60

–65

–35

–40

–45

–50

–55

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

–70

–60

4.5 5.1

6.3 6.9 7.5 8.1

3.9

5.7

1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7

LO FREQUENCY (GHz)

2.6

3

3.4 3.8 4.2 4.6

5

5.4

3 • LO FREQUENCY (GHz)

2 • LO FREQUENCY (GHz)

5572 G09

5572 G07

5572 G08

5572f

4

LT5572

U W

TYPICAL PERFOR A CE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 2.14GHz,

A LO

CC

P

= 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency f = 2MHz, I and Q 90° shifted, without image or

LO

DC BB

LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-tone measurements),

RF

BB

LO

RF(OUT)

unless otherwise noted. (Note 3)

LO and RF Port Return Loss

vs RF Frequency

Noise Floor vs RF Frequency

Image Rejection vs LO Frequency

–156

–158

–160

–162

–164

–166

–25

–30

–35

–40

0

–10

–20

–30

–40

–50

f

= 2GHz (FIXED)

LO

LO PORT, EN = LOW

LO PORT, EN = HIGH, P = 0dBm

LO

LO PORT,

EN = HIGH,

= –10dBm

P

LO

RF PORT,

EN = HIGH,

NO LO

RF PORT,

EN = LO

–45

–50

–55

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

RF PORT,

5V, 85°C

EN = HIGH,

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

P

= 0dBm

LO

2.1

LO FREQUENCY (GHz)

2.5 2.7

1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7

RF FREQUENCY (GHz)

1.3 1.5 1.7 1.9

2.3

1.3 1.5 1.7 1.8 2.1 2.3 2.5 2.7

RF FREQUENCY (GHz)

5572 G10

5572 G11

5572 G12

Absolute I/Q Gain Imbalance

vs LO Frequency

Absolute I/Q Phase Imbalance

vs LO Frequency

Voltage Gain vs LO Power

5

4

3

2

1

0

–2

0.2

0.1

0

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

–4

–6

5V, 85°C

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

–8

–10

–12

–14

–16

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–18

1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7

LO FREQUENCY (GHz)

–16 –12

–4

0

4

8

1.3 1.5

1.7 1.9 2.1 2.3 2.5 2.7

LO FREQUENCY (GHz)

–20

–8

LO INPUT POWER (dBm)

5572 G14

5572 G13

5572 G15

Output IP3 vs LO Power

LO Feedthrough vs LO Power

Image Rejection vs LO Power

–30

–35

–40

22

20

18

16

14

12

10

8

–25

–30

–35

5V, –40°C

5V, 25°C

5V, 85°C

4.5V, 25°C

5.5V, 25°C

–45

–50

–55

–40

–45

–50

f

= 2MHz

BB1

BB2

= 2.1MHz

5V, –40°C

5V, 25°C

5V, –40°C

5V, 25°C

5V, 85°C

6

4.5V, 25°C

5.5V, 25°C

4.5V, 25°C

5.5V, 25°C

–60

–55

4

–4

LO INPUT POWER (dBm)

4

8

–20 –16 –12 –8

0

–4

LO INPUT POWER (dBm)

4

8

–20 –16 –12 –8

0

–20 –16 –12 –8

LO INPUT POWER (dBm)

8

–4

0

4

5572 G17

5572 G18

5572 G16

5572f

5

LT5572

U W

V

BB

= 5V, EN = High, T = 25°C, f = 2.14GHz,

A LO

TYPICAL PERFOR A CE CHARACTERISTICS

CC

P

= 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency f = 2MHz, I and Q 90° shifted, without image or

LO

DC

LO feedthrough nulling. f = f + f (upper sideband selection). P

= –10dBm (–10dBm/tone for 2-tone measurements),

RF

BB

LO

RF(OUT)

unless otherwise noted. (Note 3)

RF CW Output Power, HD2 and

HD3 vs CW Baseband Voltage and

Temperature

RF CW Output Power, HD2 and

HD3 vs CW Baseband and Supply

Voltage

LO Feedthrough to RF Output

vs CW Baseband Voltage

–30

–35

–40

–45

–50

–55

–10

–20

–30

–40

–50

–60

–70

–80

10

–10

–20

–30

–40

–50

–60

–70

–80

10

RF

0

HD3

–10

–20

–30

–40

–50

–60

–10

–20

HD2

5V

5.5V

4.5V

25°C –30

85°C

–40°C

5V, –40°C

–40

HD2 = MAX POWER AT

+ 2 • f OR f – 2 • f

BB

5V, 25°C

f

+ 2 • f OR f – 2 • f

f

LO

BB LO

BB

5V, 85°C

LO

BB

LO

–50

–60

HD3 = MAX POWER AT

4.5V, 25°C

5.5V, 25°C

f

LO

+ 3 • f OR f – 3 • f

f

+ 3 • f OR f – 3 • f

BB

LO

BB

LO

BB

0

1

2

3

4

5

1

2

3

5

0

4

1

2

3

5

0

4

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

P-P,DIFF

5572 G21

5572 G20

5572 G19

RF 2-Tone Power (Each Tone),

IM2 and IM3 vs Baseband and

Supply Voltage

RF 2-Tone Power (Each Tone),

IM2 and IM3 vs Baseband Voltage

and Temperature

Image Rejection vs CW Baseband

Voltage

–35

–40

–45

–50

–55

10

0

10

0

5V

RF

25°C

85°C

–40°C

RF

5.5V

4.5V

–10

IM3

–20 IM2 = POWER AT

f

+ 4.1MHz

f

+ 4.1MHz

LO

IM3 = MAX POWER

–30

–40

–50

–60

–70

IM3 = MAX POWER

–30

–40

–50

–60

–70

AT f + 1.9MHz

OR f + 2.2MHz

LO

AT f + 1.9MHz

OR f + 2.2MHz

LO

IM2

5V, –40°C

5V, 25°C

5V, 85°C

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

f

= 2MHz, 2.1MHz, 0°

= 2MHz, 2.1MHz, 90°

BBI

BBQ

4.5V, 25°C

5.5V, 25°C

BBI

BBQ

0.1

1

10

0

1

2

3

4

5

0.1

1

10

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

I AND Q BASEBAND VOLTAGE (V

)

P-P,DIFF, EACH TONE

P-P,DIFF

5572 G24

5572 G22

5572 G23

Voltage Gain Distribution

Noise Floor Distribution

40

35

30

25

20

15

10

5

–40°C

25°C

85°C

f

= 2GHz

–40°C

25°C

85°C

LO

f

= 2GHz

NOISE

30 LO

f

= 2.02GHz

25

20

15

10

5

0

–1.6

–3.2 –2.8 –2.4 –2.0

VOLTAGE GAIN (dB)

–1.2

–159.4 –159 –158.6 –158.2 –157.8

5572 G26

5572 G25

NOISE FLOOR (dBm/Hz)

5572f

6

LT5572

U W

TYPICAL PERFOR A CE CHARACTERISTICS

V

= 5V, EN = High, T = 25°C, f = 2.14GHz,

A LO

CC

P

= 0dBm. BBPI, BBMI, BBPQ, BBMQ inputs 0.5V , baseband input frequency f = 2MHz, I and Q 90° shifted, without image or

LO

DC BB

LO feedthrough nulling. f = f + f (upper sideband selection). P = –10dBm (–10dBm/tone for 2-tone measurements),

RF

BB

LO

RF(OUT)

unless otherwise noted. (Note 3)

LO Leakage Distribution

Image Rejection Distribution

45

40

35

30

25

20

15

10

5

35

–40°C

25°C

85°C

f

= 2GHz

–40°C

25°C

85°C

f

= 2GHz

LO

30

25

20

15

10

5

0

<–45

–41

–35 –33

–43

–39 –37

<–52

–40

IMAGE REJECTION (dBc)

–36

–48

–44

LO LEAKAGE (dBm)

5572 G27

5572 G28

U

PI FU CTIO S

EN(Pin1):EnableInput.WhentheENpinvoltageishigher

than 1V, the IC is turned on. When the input voltage is less

than 0.5V, the IC is turned off.

BBPQ, BBMQ(Pins7, 5):BasebandInputsfortheQchan-

nel with about 90kΩ differential input impedance. These

pins should be externally biased at about 0.5V. Applied

common mode voltage must stay below 0.6V.

GND (Pins 2, 4, 6, 9, 10, 12, 15, 17): Ground. Pins 6, 9,

15 and the Exposed Pad, Pin 17, are connected to each

other internally. Pins 2 and 4 are connected to each other

internally and function as the ground return for the LO

signal. Pins 10 and 12 are connected to each other inter-

nally and function as the ground return for the on-chip RF

balun. For best RF performance, Pins 2, 4, 6, 9, 10, 12,

15 and the Exposed Pad, Pin 17, should be connected to

the printed circuit board ground plane.

V

(Pins 8, 13): Power Supply. Pins 8 and 13 are con-

CC

nected to each other internally. It is recommended to use

0.1µF capacitors for decoupling to ground on each of

these pins.

RF (Pin 11): RF Output. The RF output is an AC-coupled

single-ended output with approximately 50Ω output im-

pedance at RF frequencies. Externally applied DC voltage

should be within the range –0.5V to (V + 0.5V) in order

CC

LO(Pin3):LOInput.TheLOinputisanAC-coupledsingle-

ended input with approximately 50Ω input impedance at

RF frequencies. Externally applied DC voltage should be

to avoid turning on ESD protection diodes.

BBPI, BBMI(Pins14, 16):BasebandInputsfortheIchan-

nel with about 90kΩ differential input impedance. These

pins should be externally biased at about 0.5V. Applied

common mode voltage must stay below 0.6V.

within the range –0.5V to (V + 0.5V) in order to avoid

CC

turning on ESD protection diodes.

5572f

7

LT5572

W

BLOCK DIAGRA

V

CC

8

13

BBPI 14

BBMI 16

V-I

11 RF

0°

90°

BALUN

BBPQ

BBMQ

7

5

1

EN

2

4

6

9

3

10

12

15

17

5572 BD

GND

LO

GND

U

W U U

APPLICATIO S I FOR ATIO

The LT5572 consists of I and Q input differential voltage-

to-current converters, I and Q up-conversion mixers, an

RF output balun, an LO quadrature phase generator and

LO buffers.

theinternalPNP’sbasecurrentwillpullthecommonmode

voltagehigherthanthe0.6Vlimit.Thismaydamagethepart

if continued indeﬁnitely. The PNP’s base current is about

20µA in normal operation. On the LT5572 demo board,

external 50Ω resistors to ground are included at each

baseband input to prevent this condition and to serve as

a termination resistance for the baseband connections.

External I and Q baseband signals are applied to the dif-

ferential baseband input pins, BBPI, BBMI, and BBPQ,

BBMQ.Thesevoltagesignalsareconvertedtocurrentsand

translated to RF frequency by means of double-balanced

up-converting mixers. The mixer outputs are combined

in an RF output balun, which also transforms the output

impedance to 50Ω. The center frequency of the resulting

RF signal is equal to the LO signal frequency. The LO in-

put drives a phase shifter which splits the LO signal into

in-phase and quadrature LO signals. These LO signals

are then applied to on-chip buffers which drive the up-

conversion mixers. Both the LO input and RF output are

single-ended, 50Ω matched and AC coupled.

The I/Q input signals to the LT5572 should be DC coupled

with an applied common mode voltage level of about

0.5V in order to bias the LT5572 at its optimum operating

point. Some I/Q test generators allow setting the common

mode voltage independently. In this case, the common

mode voltage of those generators must be set to 0.5V

(See Figure 2).

The baseband inputs should be driven differentially; oth-

erwise, the even-order distortion products will degrade

the overall linearity severely. Typically, a DAC will be the

signalsourcefortheLT5572.Reconstructionﬁltersshould

be placed between the DAC outputs and the LT5572’s

baseband inputs.

Baseband Interface

The baseband inputs (BBPI, BBMI) and (BBPQ, BBMQ)

present a differential input impedance of about 90kΩ. At

each of the four baseband inputs, a capacitor of 1.8pF to

ground and a PNP emitter follower is incorporated (see

Figure 1), which limits the baseband –1dB bandwidth to

approximately 250MHz. The circuit is optimized for an

externally applied common mode voltage of 0.5V. The

baseband input pins should not be left ﬂoating because

InFigure3,atypicalbasebandinterfaceisshownincluding

a5th-orderlowpassladderﬁlterforreconstruction.Foreach

basebandpin,a0Vto1Vswingisdevelopedcorresponding

to a DAC output current of 0mA to 20mA. The maximum

sinusoidal single sideband RF output power at 2.14GHz is

about +6.2dBm for full 0V to 1V swing on each baseband

5572f

8

LT5572

U

W U U

APPLICATIO S I FOR ATIO

C

LT5572

RF

V

= 5V

CC

BALUN

FROM

Q-CHANNEL

LOMI

LOPI

BBPI

1.8pF

V

= 0.5V

BBMI

CM

5572 F01

GND

Figure 1. Simpliﬁed Circuit Schematic of the LT5572 (Only I Channel is Drawn)

50Ω

LT5572

0.5V

0.5005V

DC

50Ω

EXTERNAL

LOAD

+

1V

20µA

DC

–

50Ω

GENERATOR

5572 F02

Figure 2. DC Voltage Levels for a Generator Programmed at 0.5V for a 50Ω Load Without and With the LT5572 as a Load

DC

C

LT5572

MAX RF

+6.2dBm

V

CC

BALUN

5V

FROM

Q-CHANNEL

LOMI

LOPI

L1A

L2A

0.5V

C3

0mA TO 20mA

DC

BBPI

R1A

R2A

100Ω

C1

L1B

C2

L2B

DAC

1.8pF

R1B

100Ω

R2B

100Ω

0mA TO 20mA

BBMI

GND

5572 F03

GND

Figure 3. LT5572 Baseband Interface with 5th Order Filter and 0.5V DAC (Only I Channel is Shown)

CM

5572f

9

LT5572

U

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APPLICATIO S I FOR ATIO

Table 1. Typical Performance Characteristics vs V for f = 2GHz, P = 0dBm

CM

LO

OIP2 (dBm)

LO

V

(V)

I

(mA)

77

89

101

113

126

138

G (dB)

OP1dB (dBm)

OIP3 (dBm)

8.3

NFloor (dBm/Hz)

–163.2

LOFT (dBm)

–45.6

IR (dBc)

–42.2

–36.2

–37.0

–39.3

–41.5

–44.4

CM

CC

V

0.1

–1.3

–2.7

–2.1

–2.0

–1.9

0.0

4.7

7.1

8.6

9.3

9.1

47

45

49

51

52

0.2

0.3

0.4

0.5

0.6

11.4

15.0

18.2

21.2

–162.2

–160.9

–160.2

–159.2

–42.6

–42.0

–42.4

21.1

–158.6

–42.1

input(2V

). ThismaximumRFoutputlevelislimited

maximum baseband swing possible for a

to degrade. The LO pin input impedance is about 50Ω and

the recommended LO input power is 0dBm. For lower LO

input power, the gain, OIP2, OIP3 and dynamic range will

P-P,DIFF

by the 0.5V

PEAK

0.5V common mode voltage level (assuming no extra

DC

negative supply voltage available).

degrade, especially below –5dBm and at T = 85°C. For

A

high LO input power (e.g., 5dBm), the LO feedthrough

will increase, without improvement in linearity or gain.

Harmonics present on the LO signal can degrade the

image rejection, because they introduce a small excess

phase shift in the internal phase splitter. For the second (at

4GHz) and third harmonics (at 6GHz) at –20dBc level, the

introduced signal at the image frequency is about –57dBc

or lower, corresponding to an excess phase shift much

less than 1 degree. For the second and third harmonics at

–10dBc, still the introduced signal at the image frequency

isabout–47dBc. Higherharmonicsthanthethirdwillhave

less impact. The LO return loss typically will be better than

14dB over the 1.7GHz to 2.4GHz range. Table 2 shows the

LO port input impedance vs frequency.

It is possible to bias the LT5572 to a common mode base-

bandvoltagelevelotherthan0.5V.Table1showsthetypical

performance for different common mode voltages.

LO section

The internal LO input ampliﬁer performs single-ended to

differential conversion of the LO input signal. Figure 4

shows the equivalent circuit schematic of the LO input.

The internal, differential LO signal is split into in-phase

and quadrature (90° phase shifted) signals that drive LO

buffer sections. These buffers drive the double balanced I

andQmixers.ThephaserelationshipbetweentheLOinput

and the internal in-phase LO and quadrature LO signals

is ﬁxed, and is independent of start-up conditions. The

phase shifters are designed to deliver accurate quadrature

signals for an LO frequency near 2GHz. For frequencies

signiﬁcantly below 1.8GHz or above 2.4GHz, the quadra-

ture accuracy will diminish, causing the image rejection

Table 2. LO Port Input Impedance vs Frequency for EN = High

and P = 0dBm

LO

S

FREQUENCY

(MHz)

INPUT IMPEDANCE

11

(Ω)

Mag

Angle

95

9.4

–22

–44

–61

–75

–97

–126

1000

1400

1600

1800

2000

2200

2400

2600

45.9+j15.7

60.8+j2.1

63.2-j6.0

61.8-j14.2

56.4-j16.8

51.7-j14.7

47.3-j11.3

42.5-j8.6

0.167

0.099

0.128

0.163

0.165

0.144

0.119

0.122

V

CC

20pF

LO

INPUT

Z

IN

≈ 56Ω

The input impedance of the LO port is different if the part

is in shutdown mode. The LO input impedance for EN =

Low is given in Table 3.

5572 F04

Figure 4. Equivalent Circuit Schematic of the LO Input

5572f

10

LT5572

U

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APPLICATIO S I FOR ATIO

For EN = Low the S is given in Table 6.

Table 3. LO Port Input Impedance vs Frequency for EN = Low

22

and P = 0dBm

LO

Table 6. RF Port Output Impedance vs Frequency for EN = Low

S

FREQUENCY

(MHz)

INPUT IMPEDANCE

11

S

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

22

(Ω)

Mag

Angle

64

–4.5

–30

–51

–69

–87

–108

–130

(Ω)

Mag

Angle

154

120

95

63

28

-172

160

146

1000

1400

1600

1800

2000

2200

2400

2600

51.2+j45.6

133-j11.8

97.8-j65.8

58.6-j67.8

39.0-j55.6

29.6-j43.2

23.7-j30.8

19.7-j20.5

0.409

0.456

0.502

0.534

0.540

0.527

0.506

0.503

1000

1400

1600

1800

2000

2200

2400

2600

20.3+j9.7

30.6+j20.2

41.8+j23.6

55.6+j18.5

58.3+j49.1

48.8-j0.1

0.440

0.338

0.264

0.181

0.089

0.012

0.112

0.205

40.4+j3.1

34.7+j8.3

RF Section

To improve S for lower frequencies, a shunt capacitor

22

can be added to the RF output. At higher frequencies, a

Afterup-conversion,theRFoutputsoftheIandQmixersare

combined. An on-chip balun performs internal differential

tosingle-endedoutputconversion,whiletransformingthe

output signal impedance to 50Ω. Table 4 shows the RF

port output impedance vs frequency.

shunt inductor can improve the S . Figure 5 shows the

22

equivalent circuit schematic of the RF output.

Note that an ESD diode is connected internally from

the RF output to ground. For strong output RF signal

levels (higher than 3dBm) this ESD diode can degrade

the linearity performance if the 50Ω termination imped-

ance is connected directly to ground. To prevent this, a

coupling capacitor can be inserted in the RF output line.

This is strongly recommended for 1dB compression

measurements.

Table 4. RF Port Output Impedance vs Frequency for EN = High

and P = 0dBm

LO

S

22

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

(Ω)

Mag

Angle

153

117

90

56

10

176

153

140

1000

1400

1600

1800

2000

2200

2400

2600

20.7+j9.9

32.2+j20.3

44.9+j21.8

56.4+j12.2

52.6+j0.5

43.0+j0.5

36.8+j5.6

32.9+j11.0

0.434

0.319

0.230

0.129

0.025

0.075

0.164

0.243

V

CC

20pF

3nH

RF

OUTPUT

52.5

2.1pF

The RF output S with no LO power applied is given in

5572 F05

22

Table 5.

Figure 5. Equivalent Circuit Schematic of the RF Output

Table 5. RF Port Output Impedance vs Frequency for EN = High

and No LO Power Applied

Enable Interface

S

22

FREQUENCY

(MHz)

OUTPUT IMPEDANCE

(Ω)

Mag

Angle

153

117

97

114

157

147

134

126

Figure 6 shows a simpliﬁed schematic of the EN pin

interface. The voltage necessary to turn on the LT5572

is 1V. To disable (shut down) the chip, the enable voltage

must be below 0.5V. If the EN pin is not connected, the

chip is disabled. This EN = Low condition is guaranteed

by the 75k on-chip pull-down resistor. It is important

1000

1400

1600

1800

2000

2200

2400

2600

21.2+j10.1

35.3+j18.4

46.1+j14.1

47.4+j5.0

42.0+j3.0

37.5+j6.8

34.8+j11.8

32.8+j16.1

0.424

0.270

0.150

0.057

0.093

0.162

0.224

0.279

that the voltage at the EN pin does not exceed V by

CC

more than 0.5V. If this should occur, the full-chip supply

5572f

11

LT5572

U

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APPLICATIO S I FOR ATIO

V

CC

event that the EN pin is pulled high while the V inputs

CC

are low. The application board PCB layouts are shown in

Figures 8 and 9.

EN

75k

25k

5572 F06

Figure 6. EN Pin Interface

current could be sourced through the EN pin ESD pro-

tection diodes, which are not designed for this purpose.

Damage to the chip may result.

Evaluation Board

Figure 7 shows the evaluation board schematic. A good

ground connection is required for the Exposed Pad. If this

is not done properly, the RF performance will degrade.

Additionally, the Exposed Pad provides heat sinking for

the part and minimizes the possibility of the chip over-

heating. R1 (optional) limits the EN pin current in the

J1

J2

Figure 8. Component Side of Evaluation Board

BBIM

BBIP

R2

49.9Ω

R5

49.9Ω

V

CC

C1

16 15

BBMI GND

EN

14

BBPI

13

100nF

R1

100Ω

V

CC

1

2

3

4

12

V

EN

GND

RF

CC

J3

11

10

9

RF

OUT

GND

LO

J4

LT5572

LO IN

GND

17

BBMQ GND BBPQ

V

CC

5

6

7

8

C2

100nF

J5

J6

BBQM

R3

49.9Ω

BBQP

R4

49.9Ω

5572 F07

BOARD NUMBER: DC945A

Figure 9. Bottom Side of Evaluation Board

Figure 7. Evaluation Circuit Schematic

5572f

12

LT5572

U

W U U

APPLICATIO S I FOR ATIO

measurement. TocalculateACPR, acorrectionismadefor

the spectrum analyzer noise ﬂoor (Application Note 99).

Application Measurements

The LT5572 is recommended for basestation applications

usingvariousmodulationformats.Figure10showsatypical

application. Figure 11 shows the ACPR performance for

W-CDMA using 1-, 2- or 4-channel modulation. Figures

12, 13 and 14 illustrate the 1-, 2- and 4-channel W-CDMA

If the output power is high, the ACPR will be limited by the

linearity performance of the part. If the output power is

low, the ACPR will be limited by the noise performance of

the part. In the middle, an optimum ACPR is obtained.

–50

–60

–70

–80

–90

–125

–135

–145

–155

–165

DOWNLINK TEST

MODEL 64 DPCH

5V

8, 13

100nF

4-CH ACPR

4-CH AltCPR

2-CH ACPR

1-CH

V

LT5572

14

16

×2

CC

RF = 1.5GHz

TO 2.5GHz

ACPR

I-DAC

V-I

I-CH

11

PA

0°

1

EN

90°

2-CH AltCPR

1-CH AltCPR

1-CH NOISE

BALUN

Q-CH

V-I

7

5

Q-DAC

2-CH NOISE

–15

4-CH NOISE

–25

–20

BASEBAND

GENERATOR

5572 TA01a

3

VCO/SYNTHESIZER

2, 4, 6, 9, 10, 12, 15, 17

–30

–10

–5

RF OUTPUT POWER PER CARRIER (dBm)

5572 TA01b

Figure 10. 1.5GHz to 2.4GHz Direct Conversion Transmitter Application

Figure 11. W-CDMA ACPR, ALTCPR and Noise vs RF

Output Power at 2140MHz for 1, 2 and 4 Channels

–30

–40

–30

DOWNLINK

TEST MODEL

64 DPCH

DOWNLINK TEST

MODEL 64 DPCH

MODEL 64

–40

–50

–40

DPCH

–50

–60

SPECTRUM

ANALYSER

SPECTRUM

ANALYSER

NOISE

–70

SPECTRUM

NOISE FLOOR

ANALYSER

NOISE

–80

–90

FLOOR

CORRECTED

SPECTRUM

CORRECTED

SPECTRUM

UNCORRECTED

SPECTRUM

CORRECTED

SPECTRUM

–90

FLOOR

–100

–110

–100

–110

–100

–110

UNCORRECTED SPECTRUM

–120

2.1275

2.1475 2.1525

2.125 2.13 2.135 2.14

RF FREQUENCY (GHz)

2.155

2.115

2.155 2.165

2.1325 2.1375 2.1425

RF FREQUENCY (GHz)

2.145 2.15

2.125

2.135

2.145

RF FREQUENCY (GHz)

5572 F12

5572 F13

5572 F14

Figure 12. 1-Channel W-CDMA Spectrum

Figure 13. 2-Channel W-CDMA Spectrum

Figure 14. 4-Channel W-CDMA Spectrum

5572f

13

LT5572

U

W U U

APPLICATIO S I FOR ATIO

Because of the LT5572’s very high dynamic range,

the test equipment can limit the accuracy of the ACPR

measurement.ConsultthefactoryforadviceontheACPR

measurement if needed.

As a result, they will not cancel out entirely. Therefore, it

is important to keep the amplitudes at the BBIP and BBIM

(or BBQP and BBQM) inputs as equal as possible.

When the temperature is changed after calibration, the

LO feedthrough and the image rejection performance will

change.ThisisillustratedinFigure15.TheLOfeedthrough

and image rejection can also change as a function of the

baseband drive level as depicted in Figure 16.

TheACPRperformanceissensitivetotheamplitudematch

of the BBIP and BBIM (or BBQP and BBQM) input voltage.

This is because a difference in AC voltage amplitude will

giverisetoadifferenceinamplitudebetweentheeven-order

harmonic products generated in the internal V-I converter.

–40

10

CALIBRATED WITH

RF

P

RF

P

= –10dBm

0

–10

–20

–30

–40

–50

–60

–70

V

f

BBQ

= 5V

f

= 2GHz

CC

BBI

LO

= 2MHz, 0°

f

= f + f

–50

–60

–70

RF BB LO

IMAGE

REJECTION

f

= 2MHz, 90° EN = HIGH

EN = HIGH

P

= 0dB

LO

LO FT

V

BBI

= 5V

CC

f

= 2MHz, 0°

f

= 2MHz, 90°

BBQ

f

= 2GHz

LO

LO FEEDTHROUGH

–80

–90

IR

f

= f + f

RF BB LO

EN = HIGH

25°C

85°C

P

= 0dB

LO

–40°C

–80

–40

0

20

40

60

80

–20

0

4

5

1

2

3

TEMPERATURE (°C)

I AND Q BASEBAND VOLTAGE (V

)

P-P(DIFF)

5572 F15

5572 F16

Figure 15. LO Feedthrough and Image Rejection

vs Temperature After Calibration at 25°C

Figure 16. RF Output Power, Image Rejection and

LO Feedthrough vs Baseband Drive Voltage After

Calibration at 25°C

5572f

14

LT5572

U

PACKAGE DESCRIPTIO

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

0.72 0.05

4.35 0.05

2.90 0.05

2.15 0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

PIN 1 NOTCH R = 0.20 TYP

OR 0.35 × 45° CHAMFER

0.75 0.05

R = 0.115

TYP

4.00 0.10

(4 SIDES)

15

16

0.55 0.20

PIN 1

TOP MARK

(NOTE 6)

1

2

2.15 0.10

(4-SIDES)

(UF16) QFN 10-04

0.200 REF

0.30 0.05

0.65 BSC

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. DRAWING NOT TO SCALE

3. ALL DIMENSIONS ARE IN MILLIMETERS

4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

5. EXPOSED PAD SHALL BE SOLDER PLATED

6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION

ON THE TOP AND BOTTOM OF PACKAGE

5572f

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-

tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.

15

LT5572

RELATED PARTS

PART NUMBER

Infrastructure

LT5511

DESCRIPTION

COMMENTS

High Linearity Upconverting Mixer

RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer

LT5512

DC to 3GHz High Signal Level Downconverting DC to 3GHz, 17dBm IIP3, Integrated LO Buffer

Mixer

LT5514

LT5515

LT5516

Ultralow Distortion, IF Ampliﬁer/ADC Driver

with Digitally Controlled Gain

1.5GHz to 2.5GHz Direct Conversion Quadrature 20dBm IIP3, Integrated LO Quadrature Generator

Demodulator

0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator

Demodulator

850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB Gain Control Range

LT5517

LT5518

40MHz to 900MHz Quadrature Demodulator

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

21dBm IIP3, Integrated LO Quadrature Generator

22.8dBm OIP3 at 2GHz, –158.2dBm/Hz Noise Floor, 50Ω Single-Ended RF and LO

Ports, 4-Channel W-CDMA ACPR = –64dBc at 2.14GHz

LT5519

LT5520

LT5521

LT5522

LT5524

LT5525

LT5526

LT5527

LT5528

0.7GHz to 1.4GHz High Linearity Upconverting 17.1dBm IIP3 at 1GHz, Integrated RF Output Transformer with 50Ω Matching,

Mixer Single-Ended LO and RF Ports Operation

1.3GHz to 2.3GHz High Linearity Upconverting 15.9dBm IIP3 at 1.9GHz, Integrated RF Output Transformer with 50Ω Matching,

Mixer

Single-Ended LO and RF Ports Operation

10MHz to 3700MHz High Linearity

Upconverting Mixer

24.2dBm IIP3 at 1.95GHz, NF = 12.5dB, 3.15V to 5.25V Supply, Single-Ended LO

Port Operation

600MHz to 2.7GHz High Signal Level

Downconverting Mixer

4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB, 50Ω Single-Ended RF

and LO Ports

Low Power, Low Distortion ADC Driver with

Digitally Programmable Gain

450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control

High Linearity, Low Power Downconverting

Mixer

Single-Ended 50Ω RF and LO Ports, 17.6dBm IIP3 at 1900MHz, I = 28mA

CC

High Linearity, Low Power Downconverting

Mixer

3V to 5.3V Supply, 16.5dBm IIP3, 100kHz to 2GHz RF, NF = 11dB, I = 28mA,

CC

–65dBm LO-RF Leakage

400MHz to 3.7GHz High Signal Level

Downconverting Mixer

IIP3 = 23.5dBm and NF = 12.5dBm at 1900MHz, 4.5V to 5.25V Supply, I = 78mA

CC

1.5GHz to 2.4GHz High Linearity Direct

Quadrature Modulator

21.8dBm OIP3 at 2GHz, –159.3dBm/Hz Noise Floor, 50Ω, 0.5V Baseband

DC

Interface, 4-Channel W-CDMA ACPR = –66dBc at 2.14GHz

RF Power Detectors

LTC^®5505

RF Power Detectors with >40dB Dynamic

Range

300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply

LTC5507

LTC5508

LTC5509

LTC5530

LTC5531

LTC5532

LT5534

100kHz to 1000MHz RF Power Detector

300MHz to 7GHz RF Power Detector

300MHz to 3GHz RF Power Detector

300MHz to 7GHz Precision RF Power Detector Precision V

100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply

44dB Dynamic Range, Temperature Compensated, SC70 Package

36dB Dynamic Range, Low Power Consumption, SC70 Package

Offset Control, Shutdown, Adjustable Gain

Offset Control, Shutdown, Adjustable Offset

Offset Control, Adjustable Gain and Offset

OUT

50MHz to 3GHz Log RF Power Detector with

60dB Dynamic Range

1dB Output Variation over Temperature, 38ns Response Time, Log Linear

Response

LTC5536

Precision 600MHz to 7GHz RF Power Detector 25ns Response Time, Comparator Reference Input, Latch Enable Input,

with Fast Comparator Output

–26dBm to +12dBm Input Range

LT5537

Wide Dynamic Range Log RF/IF Detector

Low Frequency to 1GHz, 83dB Dynamic Range, 2.7V to 5.25V Supply

High Speed ADCs

LTC2220-1

12-Bit, 185Msps ADC

Single 3.3V Supply, 910mW Consumption, 67.5dB SNR, 80dB SFDR, 775MHz

Full Power BW

LTC2249

LTC2255

14-Bit, 80Msps ADC

14-Bit, 125Msps ADC

Single 3V Supply, 222mW Consumption, 73dB SNR, 90dB SFDR

Single 3V Supply, 395mW Consumption, 72.4dB SNR, 88dB SFDR, 640MHz

Full Power BW

5572f

LT 1205 • PRINTED IN USA

LinearTechnology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

16

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com


型号：	LT5572EUF#TRPBF
厂家：	Linear
描述：	LT5572 - 1.5GHz to 2.5GHz High Linearity Direct Quadrature Modulator; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
文件：	总16页 (文件大小：319K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LT5572EUF#TRPBF [Linear]

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