LTC1155CS8#TRPBF [Linear]
LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C;型号: | LTC1155CS8#TRPBF |
厂家: | Linear |
描述: | LTC1155 - Dual High Side Micropower MOSFET Driver; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C 驱动器 MOSFET驱动器 驱动程序和接口 |
文件: | 总16页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC1155
Dual High Side
Micropower MOSFET Driver
U
DESCRIPTIO
EATURE
S
F
The LTC®1155 dual high side gate driver allows using low
cost N-channel FETs for high side switching applications.
An internal charge pump boosts the gate above the posi-
tive rail, fully enhancing an N-channel MOSFET with no
external components. Micropower operation, with 8µA
standbycurrentand85µAoperatingcurrent, allowsusein
virtually all systems with maximum efficiency.
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Fully Enhances N-Channel Power MOSFETs
8µA Standby Current
85µA ON Current
Short-Circuit Protection
Wide Power Supply Range: 4.5V to 18V
Controlled Switching ON and OFF Times
No External Charge Pump Components
Replaces P-Channel High Side MOSFETs
Compatible with Standard Logic Families
Available in 8-Pin SO Package
Included on-chip is overcurrent sensing to provide auto-
matic shutdown in case of short circuits. A time delay can
be added in series with the current sense to prevent false
triggering on high in-rush loads such as capacitors and
incandescent lamps.
O U
PPLICATI
S
A
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The LTC1155 operates off of a 4.5V to 18V supply input
and safely drives the gates of virtually all FETs. The
LTC1155 is well suited for low voltage (battery-powered)
applications, particularly where micropower “sleep” op-
eration is required.
Laptop Power Bus Switching
SCSI Termination Power Switching
Cellular Phone Power Management
P-Channel Switch Replacement
Relay and Solenoid Drivers
Low Frequency Half H-Bridge
Motor Speed and Torque Control
The LTC1155 is available in both 8-pin PDIP and 8-pin SO
packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
O
TYPICAL APPLICATI
Laptop Computer Power Bus Switch with Short Circuit Protection
V
= 4.5V TO 5.5V
S
Switch Voltage Drop
+
C
C
DLY
R
R
SEN
DLY
SEN
0.02Ω
10µF
0.1µF
0.1µF
0.02Ω
0.25
0.20
0.15
0.10
R
R
100k
DLY
100k
DLY
DS1
G1
V
DS2
S
*IRLR034
*IRLR034
G2
LTC1155
GND
5A
MAX
5A
MAX
TTL, CMOS INPUT
IN1
IN2
TTL, CMOS INPUT
POWER BUS
0.05
0.00
µP
SYSTEM
DISK
DRIVE
PRINTER,
ETC.
DISPLAY
0
1
2
3
OUTPUT CURRENT (A)
GND
1155 TA02
1155 TA01
*SURFACE MOUNT
1
LTC1155
W W W
U
(Note 1)
ABSOLUTE AXI U RATI GS
Supply Voltage ........................................................ 22V
Input Voltage ...................... (VS +0.3V) to (GND – 0.3V)
Gate Voltage .........................(VS +24V) to (GND – 0.3V)
Current (Any Pin).................................................. 50mA
Storage Temperature Range ................. – 65°C to 150°C
Operating Temperature Range
LTC1155C................................................ 0°C to 70°C
LTC1155I........................................... –40°C to 85°C
LTC1155M........................................ – 55°C to 125°C
Lead Temperature Range (Soldering, 10 sec.)...... 300°C
W
U
/O
PACKAGE RDER I FOR ATIO
ORDER PART
ORDER PART
TOP VIEW
TOP VIEW
NUMBER
NUMBER
DS1
G1
1
2
3
4
8
7
6
5
DS2
G2
DS1
G1
1
2
3
4
8
7
6
5
DS2
G2
LTC1155CN8
LTC1155CJ8
LTC1155IN8
LTC1155MJ8
LTC1155CS8
LTC1155IS8
GND
IN1
V
S
GND
IN1
V
S
IN2
IN2
S8 PART MARKING
J8 PACKAGE
N8 PACKAGE
S8 PACKAGE
8-LEAD PLASTIC SO
8-LEAD CERDIP 8-LEAD PDIP
1155
1155I
TJMAX = 150°C, θJA = 100°C/W (J8)
TJMAX = 100°C, θJA = 130°C/W (N8)
TJMAX = 100°C, θJA = 150°C/W
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = 4.5V to 18V, unless otherwise noted.
LTC1155M
TYP
LTC1155C/LTC1155I
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
18
MIN
TYP
MAX
UNITS
V
V
S
Supply Voltage
●
4.5
4.5
18
I
Quiescent Current OFF
Quiescent Current ON
Quiescent Current ON
Input High Voltage
Input Low Voltage
Input Current
V
= 0V, V = 5V (Note 2)
8
20
8
20
µA
µA
µA
V
Q
IN
S
V = 5V, V = 5V (Note 3)
S
85
120
400
85
120
400
IN
V = 12V, V = 5V (Note 3)
S
180
180
IN
V
V
●
●
●
2.0
2.0
INH
0.8
0.8
V
INL
I
0V < V < V
S
±1.0
±1.0
µA
pF
IN
IN
C
V
Input Capacitance
Drain Sense Threshold Voltage
5
5
IN
80
75
100
100
120
125
80
75
100
100
120
125
mV
mV
SEN
●
I
Drain Sense Input Current
Gate Voltage Above Supply
0V < V
< V
S
±0.1
±0.1
µA
SEN
SEN
V
-V
V = 5V
●
●
●
6.0
7.5
15
6.8
8.5
18
9.0
15
25
6.0
7.5
15
6.8
8.5
18
9.0
15
25
V
V
V
GATE
S
S
V = 6V
S
V = 12V
S
t
Turn ON Time
V = 5V, C
Time for V
Time for V
= 1000pF
GATE
ON
S
> V + 2V
50
200
250
1100
750
2000
50
200
250
1100
750
2000
µs
µs
GATE
GATE
S
> V + 5V
S
V = 12V, C
Time for V
Time for V
= 1000pF
S
GATE
GATE
GATE
> V + 5V
50
120
180
450
500
1200
50
120
180
450
500
1200
µs
µs
S
> V + 10V
S
2
LTC1155
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C.
VS = 4.5V to 18V, unless otherwise noted.
LTC1155M
TYP
LTC1155C/LTC1155I
SYMBOL
PARAMETER
CONDITIONS
V = 5V, C = 1000pF
GATE
MIN
10
10
5
MAX
60
MIN
10
10
5
TYP
MAX
UNITS
µs
t
Turn OFF Time
OFF
SC
S
Time for V
< 1V
36
26
16
16
36
60
GATE
V = 12V, C
Time for V
= 1000pF
< 1V
S
GATE
GATE
60
26
60
µs
t
Short-Circuit Turn OFF Time
V = 5V, C
Time for V
= 1000pF
GATE
S
< 1V
30
16
30
µs
GATE
V = 12V, C
Time for V
= 1000pF
< 1V
S
GATE
GATE
5
30
5
16
30
µs
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Quiescent current OFF is for both channels in OFF condition.
Note 3: Quiescent current ON is per driver and is measured independently.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Standby Supply Current
Supply Current/Side (ON)
High Side Gate Voltage
1000
900
800
700
600
24
22
20
18
16
50
45
40
35
30
V
T
= V = 0V
IN2
V
T
OR V = 2V
IN2
IN1
IN1
= 25°C
= 25°C
J
J
500
400
300
200
100
0
14
12
10
8
25
20
15
10
5
6
4
0
0
5
10
15
20
0
5
10
15
20
0
5
10
15
20
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
1155 G02
1155 TPC03
1155 G01
Input Threshold Voltage
Drain Sense Threshold Voltage
Low Side Gate Voltage
2.4
2.2
2.0
1.8
1.6
150
140
130
120
110
30
27
24
21
18
V
V
ON
1.4
1.2
1.0
0.8
0.6
0.4
100
90
80
70
60
50
15
12
9
OFF
6
3
0
0
5
10
15
20
0
5
10
15
20
0
2
4
6
8
10
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
1155 G04
1155 G05
1155 G06
3
LTC1155
TYPICAL PERFOR A CE CHARACTERISTICS
U W
Turn ON Time
Turn OFF Time
Short-Circuit Turn OFF Delay Time
1000
900
800
700
600
50
45
40
35
30
50
45
40
35
30
C
= 1000pF
C
= 100pF
GATE
C
= 1000pF
GATE
GATE
TIME FOR V
< 1V
TIME FOR V
< 1V
GATE
GATE
500
400
300
200
100
0
25
20
15
10
5
25
20
15
10
5
V
= V –1V
S
SEN
NO EXTERNAL DELAY
V
= 5V
GS
V
GS
= 2V
0
0
0
5
10
15
20
0
5
10
15
20
0
5
10
15
20
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
1155 G07
1155 G08
1155 G09
Standby Supply Current
Supply Current Per Side (ON)
Input ON Threshold
50
45
2.4
2.2
1000
900
40
35
2.0
1.8
800
700
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
600
500
400
300
200
100
0
V
V
= 5V
S
S
V
S
= 18V
= 18V
V
= 12V
S
V
= 5V
S
V
S
= 5V
0
–50 –25
0
25
50
75 100 125
–50 –25
0
25
50
75 100 125
–50 –25
0
25
50
75 100 125
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
1155 G10
1155 G12
1155 G11
U
U
U
PIN FUNCTIONS
Input Pin
few hundred kΩ). Care should be taken to minimize any
loading of this pin by parasitic resistance to ground or
supply.
The LTC1155 logic input is a high impedance CMOS gate
and should be grounded when not in use. These input pins
have ESD protection diodes to ground and supply and,
therefore, should not be forced beyond the power supply
rails.
Supply Pin
The supply pin of the LTC1155 serves two vital purposes.
The first is obvious: it powers the input, gate drive,
regulation and protection circuitry. The second purpose is
less obvious: it provides a Kelvin connection to the top of
the two drain sense resistors for the internal 100mV
reference. The supply pin should be connected directly to
the power supply source as close as possible to the top of
the two sense resistors.
Gate Drive Pin
The gate drive pin is either driven to ground when the
switch is turned OFF or driven above the supply rail when
the switch is turned ON. This pin is a relatively high
impedance when driven above the rail (the equivalent of a
4
LTC1155
U
U
U
PIN FUNCTIONS
The supply pin of the LTC1155 should not be forced below
ground as this may result in permanent damage to the
device. A 300Ω resistor should be inserted in series with
the ground pin if negative supply voltages are anticipated.
This pin is also a high impedance CMOS gate with ESD
protectionand, therefore, shouldnotbeforcedbeyondthe
power supply rails. To defeat the over current protection,
short the drain sense to supply.
Some loads, such as large supply capacitors, lamps or
motors require high inrush currents. An RC time delay
must be added between the sense resistor and the drain
sense pin to ensure that the drain sense circuitry does not
false trigger during start-up. This time constant can be set
fromafewmicrosecondstomanyseconds.However,very
longdelaysmayputtheMOSFETinriskofbeingdestroyed
by a short-circuit condition (see Applications Information
section).
Drain Sense Pin
As noted previously, the drain sense pin is compared
against the supply pin voltage. If the voltage at this pin is
morethan100mVbelowthesupplypin, theinputlatchwill
be reset and the MOSFET gate will be quickly discharged.
Cycle the input to reset the short-circuit latch and turn the
MOSFET back on.
W
BLOCK DIAGRA
V
S
DRAIN
SENSE
ANALOG SECTION
100mV
REFERENCE
10µs
DELAY
COMP
LOW STANDBY
CURRENT
REGULATOR
GATE CHARGE
AND DISCHARGE
CONTROL LOGIC
ANALOG
DIGITAL
GATE
R
S
TTL-TO-CMOS
CONVERTER
VOLTAGE
REGULATORS
INPUT
LATCH
IN
ONE
SHOT
OSCILLATOR
AND CHARGE
PUMP
FAST/SLOW
GATE CHARGE
LOGIC
GND
1155 BD
U
OPERATIO
The LTC1155 contains two independent power MOSFET
gate drivers and protection circuits (refer to the Block
Diagram for details). Each half of the LTC1155 consists of
the following functional blocks:
to CMOS converter output enables the rest of the circuitry.
In this way the power consumption is kept to a minimum
in the standby mode.
Internal Voltage Regulation
TTL and CMOS Compatible Inputs
The output of the TTL to CMOS converter drives two
regulated supplies which power the low voltage CMOS
logicandanalogblocks.Theregulatoroutputsareisolated
from each other so that the noise generated by the charge
pump logic is not coupled into the 100mV reference or the
analog comparator.
Each driver input has been designed to accommodate a
wide range of logic families. The input threshold is set at
1.3V with approximately 100mV of hysteresis.
A voltage regulator with low standby current provides
continuous bias for the TTL to CMOS converters. The TTL
5
LTC1155
U
OPERATIO
Gate Charge Pump
lead. If the drop across this resistor exceeds the internal
100mV threshold, the input latch is reset and the gate is
quickly discharged by a large N-channel transistor.
Gate drive for the power MOSFET is produced by an
adaptive charge pump circuit that generates a gate voltage
substantially higher than the power supply voltage. The
charge pump capacitors are included on-chip and, there-
fore, no external components are required to generate the
gate drive.
Controlled Gate Rise and Fall Times
When the input is switched ON and OFF, the gate is
charged by the internal charge pump and discharged in a
controlled manner. The charge and discharge rates have
been set to minimize RFI and EMI emissions in normal
operation. If a short circuit or current overload condition
is encountered, the gate is discharged very quickly (typi-
cally a few microseconds) by a large N-channel transistor.
Drain Current Sense
The LTC1155 is configured to sense the drain current of
the power MOSFET in high side applications. An internal
100mV reference is compared to the drop across a sense
resistor (typically 0.002Ω to 0.1Ω) in series with the drain
O U
W
U
PPLICATI
A
S I FOR ATIO
V
= 5.0V
S
Protecting the MOSFET
R
C
SEN
DLY
TheMOSFETisprotectedagainstdestructionbyremoving
drive from the gate as soon as an overcurrent condition is
detected. Resistive and inductive loads can be protected
with no external time delay. Large capacitive or lamp
loads, however, require that the overcurrent shutdown
functionbedelayed long enoughtostarttheload butshort
enough to ensure the safety of the MOSFET.
0.03Ω
0.22µF
R
270k
DLY
V
S
DS1
G1
IN1
LTC1155
GND
IRLZ34
LOAD
Example Calculations
GND
ConsiderthecircuitofFigure1. ApowerMOSFETisdriven
by one side of an LTC1155 to switch a high inrush current
load. The drain sense resistor is selected to limit the
maximum DC current to 3.3A.
1155 F01
Figure 1. Adding an RC Delay
drops 0.1V at 2A and, therefore, dissipates 200mW in
normal operation (no heat sinking required).
RSEN = VSEN TRIP
/I
= 0.1/3.3A
Iftheoutputisshortedtoground, thecurrentthroughthe
FET rises rapidly and is limited by the RDS(ON) of the FET,
the drain sense resistor and the series resistance be-
tween the power supply and the FET. Series resistance in
the power supply can be substantial and attributed to
many sources including harness wiring, PCB traces,
supply capacitor ESR, transformer resistance or battery
resistance.
= 0.03Ω
A time delay is introduced between RSEN and the drain
sense pin of the LTC1155 which provides sufficient delay
to start a high inrush load such as large supply capacitors.
In this example circuit, we have selected the IRLZ34
because of its low RDS(ON )(0.05Ω with VGS = 5V). The FET
6
LTC1155
O U
W
U
PPLICATI
A
S I FOR ATIO
For this example, we assume a worst-case scenario; i.e.,
that the power supply to the power MOSFET is “hard” and
provides a constant 5V regardless of the current. In this
case, the current is limited by the RDS(ON) of the MOSFET
and the drain sense resistance. Therefore:
Graphical Approach to Selecting RDLY and CDLY
Figure 2 is a graph of normalized overcurrent shutdown
time versus normalized MOSFET current. This graph can
be used instead of the above equation to calculate the RC
time constant. The Y axis of the graph is normalized to one
RC time constant. The X axis is normalized to the set
current. (The set current is defined as the current required
to develop 100mV across the drain sense resistor).
IPEAK = VSUPPLY/0.08Ω
= 62.5A
The drop across the drain sense resistor under these
conditions is much larger than 100mV and is equal to the
drain current times the sense resistance:
10
VDROP = (IPEAK)(RSEN
= 1.88V
)
1
By consulting the power MOSFET data sheet SOA graph,
we note that the IRLZ34 is capable of delivering 62.5A at
a drain-to-source voltage of 3.12V for approximately
10ms.
0.1
0.01
1
2
5
10
20
50 100
AnRCtimeconstantcannowbecalculatedwhichsatisfies
this requirement:
MOSFET CURRENT (1 = SET CURRENT)
1155 F02
Figure 2. Shutdown Time vs MOSFET Current
–t
RC =
Note that the shutdown time is shorter for increasing
levels of MOSFET current. This ensures that the total
energy dissipated by the MOSFET is always within the
bounds established by the MOSFET manufacturer for safe
operation.
VSEN
In 1−
RSEN • IMAX
– 0.01
RC =
0.10
In 1−
In the example presented above, we established that the
power MOSFET should not be allowed to pass 62.5A for
more than 10ms. 62.5Aisroughly 18 times the set current
of 3.3A. By drawing a line up from 18 and reflecting it off
the curve, we establish that the RC time constant should
be set at 10ms divided by 0.054, or 180ms. Both methods
result in the same conclusion.
0.030 • 62.5
= – 0.01/–0.054
= 182ms
This time constant should be viewed as a maximum safe
delay time and should be reduced if the competing
requirement of starting a high inrush current load is less
stringent; i.e., if the inrush time period is calculated at
20ms, the RC time constant should be set at roughly two
or three times this time period and not at the maximum of
182ms. A 60ms time constant would be produced with a
270k resistor and a 0.22µF capacitor (as shown in
Figure 1).
Using a Speed Up Diode
A way to further reduce the amount of time that the power
MOSFET is in a short-circuit condition is to “bypass”the
delayresistorwithasmallsignaldiodeasshowninFigure
3. The diode will engage when the drop across the drain
sense resistor exceeds 0.7V, providing a direct path to the
7
LTC1155
PPLICATI
O U
W
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A
S I FOR ATIO
V
= 5.0V
S
IftheMOSFETisturnedONandthepowersupply(battery)
removed, the inductor current is delivered by the supply
capacitor. The supply capacitor must be large enough to
deliver the energy demanded by the discharging inductor.
If the storage capacitor is too small, the supply lead of the
LTC1155 may be pulled below ground, permanently
destroying the device.
C
R
DLY
SEN
0.22µF
0.025Ω
R
270k
DLY
V
S
DS1
G1
D1
1N4148
IN1
LTC1155
GND
IRLZ34
Consider the case of a load inductance of 1mH which is
supporting 3A when the 6V power supply connection is
interrupted. A supply capacitor of at least 250µF is
required to prevent the supply lead of the LTC1155 from
being pulled below ground (along with any other circuitry
tied to the supply).
LOAD
GND
1155 F03
Figure 3. Using a Speed-Up Diode
Any wire between the power MOSFET source and the load
will add a small amount of parasitic inductance in series
with the load (approximately 0.4µH/foot). Bypass the
power supply lead of the LTC1155 with a minimum of
10µF to ensure that this parasitic load inductance is
discharged safely, even if the load is otherwise resistive.
sense pin and dramatically reducing the amount of time
the MOSFET is in an overload condition. The drain sense
resistor value is selected to limit the maximum DC current
to 4A. Above 28A, the delay time drops to 10µs.
Switched Supply Applications
Large inductive loads, such as solenoids, relays and
motorsstoreenergywhichmustbedirectedbacktoeither
the power supply or to ground when the supply voltage is
interrupted (see Figure 4). In normal operation, when the
switch is turned OFF, the energy stored in the inductor is
harmlessly absorbed by the MOSFET; i.e., the current
flows out of the supply through the MOSFET until the
inductor current falls to zero.
Large Inductive Loads
Large inductive loads (>0.1mH) may require diodes con-
nected directly across the inductor to safely divert the
stored energy to ground. Many inductive loads have these
diodes included. Ifnot, adiode ofthe propercurrentrating
should be connected across the load to safely divert the
stored energy.
Reverse-Battery Protection
+
+
R
The LTC1155 can be protected against reverse-battery
conditions by connecting a resistor in series with the
ground lead as shown in Figure 5. The resistor limits the
supplycurrenttolessthan50mAwith–12Vapplied. Since
the LTC1155 draws very little current while in normal
operation, the drop across the ground resistor is minimal.
SEN
C
C
S
DLY
0.025Ω
R
DLY
V
S
DS1
IN1
LTC1155
GND
IRLZ34
G1
The TTL or CMOS driving logic is protected against
reverse-battery conditions by the 100k input current lim-
iting resistor. The addition of 100k resistance in series
with the input pin will not affect the turn ON and turn OFF
times which are dominated by the controlled gate charge
and discharge periods.
L
LOAD
GND
1155 F04
Figure 4. Switched Supply
8
LTC1155
O U
W
U
PPLICATI
A
S
I FOR ATIO
V
= 4.5V TO 18V
S
18.6V and pulls the drain sense pin 0.6V below the supply
pin voltage.
R
C
SEN
DLY
The supply voltage is limited to 18.6V and the gate drive is
immediately removed from the MOSFET to ensure that it
cannot conduct during the overvoltage period. The gate of
the MOSFET will be latched OFF until the supply transient
is removed and the input turned OFF and ON again.
R
DLY
V
S
DS1
G1
+
10µF
25V
IN1
LTC1155
GND
100k
V
= 4.5V TO 18V
S
5V
510Ω
300Ω
1/4W
LOAD
GND
1155 F05
10k
1N4148
V
S
DS1
Figure 5. Reverse Battery Protection
IN1
LTC1155
GND
Overvoltage Protection
G1
The MOSFET and load can be protected against overvolt-
age conditions by using the circuit of Figure 6. The drain
sense function is used to detect an overvoltage condition
and quickly discharge the power MOSFET gate. The 18V
zener diode conducts when the supply voltage exceeds
18V
LOAD
GND
1155 F06
Figure 6. Overvoltage Shutdown and Protection
U
O
TYPICAL APPLICATI S
Dual 2A Autoreset Electronic Fuse
5V
+
0.1µF
0.1µF
0.03Ω
0.03Ω
10µF
30k
30k
DS1
G1
V
DS2
G2
S
1/2 SI9956DY
1/2 SI9956DY
1N4148
LTC1155
GND
100k
100k
8
LMC555
1
4
f
= 1Hz
750k
O
3
IN1
IN2
1N4148
OUT 1
2
6
OUT 2
1.0µF
ALL COMPONENTS SHOWN ARE SURFACE MOUNT
1155 TA03
9
LTC1155
U
O
TYPICAL APPLICATI S
High Side Driver with VDS Sense Short-Circuit Shutdown
4.5V TO 6V
X-NOR Fault Detection
4.5V TO 6V
+
+
10µF
10µF
30k
0.1Ω
V
V
S
S
DS1
G1
DS1
G1
5V
*
1/2
LTC1155
1/2
LTC1155
IN1
IN1
10k
IRLZ24
IRLD024
GND
GND
100k
0.01µF
270k
FAULT
LOAD
74C266
LOAD
1155 TA05
*ANY 74C OR 74HC LOGIC GATE.
MOSFET SHUTS DOWN IF V > 1V
DS
1155 TA04
Truth Table
IN
OUT
CONDITION
Switch OFF
Short Circuit
Open Load
Switch ON
FLT
1
0
0
0
1
1
1
0
0
0
1
1
Low Side Driver with Drain End Current Sensing
Low Side Driver with Source End Current Sensing
5V
V
LOAD
5V
+
+
10µF
51Ω
10µF
0.05Ω
5%
V
S
LOAD
DS1
G1
V
S
DS1
G1
1/2
LTC1155
IN1
1/2
LTC1155
LOAD
IN1
SMP25N05
GND
SMP25N05
GND
7
3
2
+
6
®
1155 TA06
LT 1077*
–
0.02Ω
5%
4
51Ω
1155 TA07
*DO NOT SUBSTITUTE. MUST BE A PRECISION, SINGLE
SUPPLY, MICROPOWER OP AMP (I < 60µA)
Q
10
LTC1155
U
O
TYPICAL APPLICATI S
Automotive High Side Driver with Reverse-Battery
and High Voltage Transient Protection
5V/3A Extremely Low Voltage Drop Regulator with 10µA Standby
Current and Short-Circuit Protection
5.2V TO 6V
9V TO 16V
+
+
10µF
C
**
DLY
R
10µF
0.1µF
0.02Ω
0.02Ω
5%
**
300k
DLY
V
V
S
S
5V
DS1
G1
DS1
G1
100k*
1/2
LTC1155
1/2
LTC1155
18V
IN1
IN1
ON/OFF
FAULT
1N4746A
100k
IRLR024
MTP50N05E
GND
GND
18V
200pF
1N4746A
M
10k
8
0.1µF
300Ω
1/4W
1
VALVE,
ETC.
3
4
5V/3A
LT1431
7
+
1155 TA08
*PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE
TRANSIENT OR REVERSE BATTERY
470µF*
6
5
**NOT REQUIRED FOR INDUCTIVE OR RESISTIVE LOADS
*CAPACITOR ESR SHOULD BE LESS THAN 0.5Ω
1155 TA09
Using the Second Channel for Fault Detection
Bootstrapped Gate Drive for (100Hz < FO < 10kHz)
4.5V TO 5.5V
9V TO 18V
+
10µF
0.1µF*
100k
0.01µF
1N4148
0.01Ω
0.05Ω
5V
30k*
30k
FLT
µP OR
CONTROL
LOGIC
DS1
G2
V
DS2
V
S
S
DS1
1N4148
1N4148
µP OR
CMOS/TTL
LOGIC
1/2
100k
LTC1155
GND
IN1
LTC1155
SMD25N05-45L
IN2
IN1
2N2222
G1
0.1µF
ON/OFF
G1
GND
IRFZ44
LOAD
18V
V
= 2V – 0.6V
S
GATE
2N3906
1155 TA10
LOAD
NOTE:
DRAIN SENSE 2 IS USED TO DETECT A FAULT IN CHANNEL 1.
GATE 2 PULLS DOWN ON DRAIN SENSE 1 TO DISCHARGE
THE MOSFET AND REPORT THE FAULT TO THE µP
RISE AND FALL TIMES ARE βETA TIMES FASTER
1155 TA11
*NOT REQUIRED FOR RESISTIVE OR INDUCTIVE LOADS
11
LTC1155
TYPICAL APPLICATI S
U
O
Logic Controlled Boost Mode Switching Regulator with Short-Circuit Protection and 8µA Standby Current
4.75V TO 5.25V
+
100µF
0.33µF
100k
0.02Ω
V
S
DS1
G1
1/2
LTC1155
FROM µP, ETC.
IN1
MTM25N05L
GND
5V SWITCHED
12V/1A
FAULT
1N5820
50µH*
1N4148
5
4
10.7k
1%
1
+
+
LT1170
2
2200µF
68µF
1k
1µF
3
1.24k
1%
*COILTRONICS CTX-7-52
1155 TA12
High Efficiency 60Hz Full-Wave Synchronous Rectifier
**
IRFZ44*
D
9V/3A
DC
18V
S
1N4148
1N4746A
100k
10k
2
1N4148
DS1
IN1
V
DS2
G1
S
12.6VCT
10Ω
–
+
7
LT1006
4
110V AC
+
6
4700µF
16V
LTC1155
GND
1N4148
3
IN2
G2
1N4148
10µF
+
0.03Ω
100k
10k
18V
1N4746A
1N4001
S
D
IRFZ44*
**
MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA
*NO HEATSINK REQUIRED. CASES (DRAINS) CAN BE TIED TOGETHER
**INTERNAL BODY DIODE OF MOSFET
1155 TA13
12
LTC1155
U
O
TYPICAL APPLICATI S
High Efficiency 60Hz Full-Wave Synchronous Rectifier
9V/3A
DC
10k
100k
4 × IRFZ44*
D
D
1N4148
1N4148
DS2
IN1
V
DS1
G1
S
–
+
2
3
7
110V AC
6.3V AC
+
S
D
S
D
6
4700µF
16V
**
**
**
**
LTC1155
GND
LT1006
IN2
G2
4
S
S
18V
1N4746A
18V
1N4746A
10k
100k
10Ω
0.03Ω
1155 TA14
MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA
*NO HEATSINK REQUIRED
**INTERNAL BODY DIODE OF MOSFET
Push-Pull Driver with Shoot-Through Current Lockout (fO < 100Hz)
4.5V TO 6V
5V
0.01Ω
10µF
0.1µF
300k
100k
100k
DS1
IN1
V
DS2
G1
S
*
*
HI/LO
IRLZ24
74HC02
LTC1155
GND
V
OUT
IN2
G2
IRFZ24
1N4148
1N4148
*OPPOSING GATE MUST DROP BELOW 2V BEFORE THE OTHER IS CHARGED
1155 TA15
13
LTC1155
TYPICAL APPLICATI S
U
O
Full H-Bridge Driver with Shoot-Through Current Lockout and Stall Current Shutdown (fO < 100Hz)
4.5V TO 6V
0.01Ω
10µF
0.1µF
100k
5V
DIRECTION
74HC02
DS1
IN1
V
S
DS2
G1
IRLZ44
IRLZ44
*
LTC1155
GND
IN2
VN2222L
G2
M
DISABLE
*
IRFZ44
IRFZ44
VN2222L
1155 TA16
*OPPOSING GATES ARE HELD OFF UNTIL OTHER GATES DROP BELOW 1.5V
DC Motor Speed and Torque Control for Cordless Tools and Appliances
100Ω
+
6V
0.1µF
1.1k
+
47µF
16V
0.1Ω
10k
TORQUE
ADJUST
300k
1M
1M
1M
1A TO
10A
100k
MAX
+
DS1
IN1
V
DS2
G1
S
1/2
LT1017
IRFZ24
10k
SPEED
ADJUST
120k
–
LTC1155
GND
+
1M
1/2
LT1017
IN2
G2
SMALL DC APPLIANCE
OR TOOL MOTOR
M
–
0.0033µF
100k
1155 TA17
SPEED IS PROPORTIONAL TO PULSE WIDTH. TORQUE IS PROPORTIONAL TO CURRENT
14
LTC1155
U
PACKAGE DESCRIPTIO
Dimensions in inches (milimeters) unless otherwise noted.
J8 Package
8-Lead CERDIP (Narrow 0.300, Hermetic)
(LTC DWG # 05-08-1110)
0.405
(10.287)
MAX
0.005
(0.127)
MIN
0.200
(5.080)
MAX
0.300 BSC
(0.762 BSC)
CORNER LEADS OPTION
(4 PLCS)
6
5
8
7
0.015 – 0.060
0.023 – 0.045
(0.584 – 1.143)
HALF LEAD
OPTION
(0.381 – 1.524)
0.025
(0.635)
RAD TYP
0.220 – 0.310
(5.588 – 7.874)
0.008 – 0.018
(0.203 – 0.457)
0° – 15°
0.045 – 0.068
(1.143 – 1.727)
FULL LEAD
OPTION
J8 1197
1
2
3
4
0.045 – 0.068
(1.143 – 1.727)
0.125
3.175
MIN
0.100 ± 0.010
(2.540 ± 0.254)
0.014 – 0.026
(0.360 – 0.660)
NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE
OR TIN PLATE LEADS
N8 Package
8-Lead PDIP (Narrow 0.300)
(LTC DWG # 05-08-1510)
0.400*
(10.160)
MAX
0.130 ± 0.005
(3.302 ± 0.127)
0.300 – 0.325
(7.620 – 8.255)
0.045 – 0.065
(1.143 – 1.651)
8
7
6
5
4
0.065
(1.651)
TYP
0.255 ± 0.015*
(6.477 ± 0.381)
0.009 – 0.015
(0.229 – 0.381)
0.125
(3.175)
MIN
0.020
(0.508)
MIN
+0.035
–0.015
1
2
3
0.325
N8 1197
0.100 ± 0.010
(2.540 ± 0.254)
0.018 ± 0.003
(0.457 ± 0.076)
+0.889
8.255
(
)
–0.381
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
0.010 – 0.020
(0.254 – 0.508)
7
5
8
6
× 45°
0.053 – 0.069
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
0.016 – 0.050
0.406 – 1.270
0.050
(1.270)
TYP
0.014 – 0.019
(0.355 – 0.483)
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
SO8 0996
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
1
2
3
4
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LTC1155
TYPICAL APPLICATI S
U
O
Isolated High Voltage High Side Switch with Circuit Breaker
6V TO 12V
1N5817
1k
1N4148
1k
C
0.1µF
200V
10mA
CONTROL
90V
4N28
1/6 74C14
B
E
100k
DS1
IN1
V
DS2
G1
S
+
6A MAX
10µF
25V
1N4148
100pF
LTC1155
GND
1k
1N5817
IN2
G2
2N2222
18V
1N4746A
0.1Ω
1M
M
MUR420
1155 TA18
Isolated Solid-State AC Relay with Circuit Breaker
IN/OUT
18V
1N4746A
18V
1N4746A
IRFZ24
5V
0.1µF
300Ω
0.01µF
0.05Ω
1/6 74C14
100k
5.6V
1N5817
1N4690A
100k
DS1
IN1
V
DS2
G1
S
0.0022µF
IRFZ24
+
600Ω
1µF
100k
LTC1155
GND
IN/OUT
24V AC
2A MAX
1N4148
IN2
G2
ON/OFF
100k
T1*
1/6 74C14
EQUIVALENT FUNCTION
2A
IN/OUT
ON/OFF
IN/OUT
*PICO ELECTRONICS F-28115 OR EQUIVALENT
1155 TA19
RELATED PARTS
PART NUMBER
LTC1153
LT1161
DESCRIPTION
COMMENTS
Auto-Reset Electronic Circuit Breaker
Programmable Trip Current, Fault Status Output
Quad Protected High Side MOSFET Driver
Triple 1.8V to 6V High Side MOSFET Driver
Dual 24V High Side MOSFET Driver
8V to 48V Supply Range, Individual Short-Circuit Protection
0.01µA Standby Current, Triple Driver in SO-8 Package
Operates from 9V to 24V, Short-Circuit Protection
LTC1163
LTC1255
LTC1477
LTC1623
LTC1710
Protected Monolithic High Side Switch
SMBus Dual High Side Switch Controller
SMBus Dual Monolithic High Side Switch
Low R
0.07Ω Switch, 2A Short-Circuit Protected
DS(ON)
2-Wire SMBus Serial Interface, Built-In Gate Charge Pumps
Two Low R
0.4Ω/300mA Switches in 8-Lead MSOP Package
1155fa LT/TP 0399 2K REV A • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1991
DS(ON)
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
●
●
(408)432-1900 FAX:(408)434-0507 www.linear-tech.com
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