LTC1155IN8_技术文档

LTC1155

Dual High Side

Micropower MOSFET Driver

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DESCRIPTIO

EATURE

S

F

The LTC^®1155 dual high side gate driver allows using low

cost N-channel FETs for high side switching applications.

An internal charge pump boosts the gate above the posi-

tive rail, fully enhancing an N-channel MOSFET with no

external components. Micropower operation, with 8µA

standbycurrentand85µAoperatingcurrent, allowsusein

virtually all systems with maximum efficiency.

■

Fully Enhances N-Channel Power MOSFETs

8µA Standby Current

85µA ON Current

Short-Circuit Protection

Wide Power Supply Range: 4.5V to 18V

Controlled Switching ON and OFF Times

No External Charge Pump Components

Replaces P-Channel High Side MOSFETs

Compatible with Standard Logic Families

Available in 8-Pin SO Package

Included on-chip is overcurrent sensing to provide auto-

matic shutdown in case of short circuits. A time delay can

be added in series with the current sense to prevent false

triggering on high in-rush loads such as capacitors and

incandescent lamps.

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PPLICATI

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A

■

The LTC1155 operates off of a 4.5V to 18V supply input

and safely drives the gates of virtually all FETs. The

LTC1155 is well suited for low voltage (battery-powered)

applications, particularly where micropower “sleep” op-

eration is required.

Laptop Power Bus Switching

SCSI Termination Power Switching

Cellular Phone Power Management

P-Channel Switch Replacement

Relay and Solenoid Drivers

Low Frequency Half H-Bridge

Motor Speed and Torque Control

The LTC1155 is available in both 8-pin PDIP and 8-pin SO

packages.

, LTC and LT are registered trademarks of Linear Technology Corporation.

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TYPICAL APPLICATI

Laptop Computer Power Bus Switch with Short Circuit Protection

V

= 4.5V TO 5.5V

S

Switch Voltage Drop

+

C

DLY

R

SEN

DLY

SEN

0.02Ω

10µF

0.1µF

0.02Ω

0.25

0.20

0.15

0.10

R

100k

DLY

100k

DLY

DS1

G1

V

DS2

S

*IRLR034

G2

LTC1155

GND

5A

MAX

5A

MAX

TTL, CMOS INPUT

IN1

IN2

TTL, CMOS INPUT

POWER BUS

0.05

0.00

µP

SYSTEM

DISK

DRIVE

PRINTER,

ETC.

DISPLAY

0

1

2

3

OUTPUT CURRENT (A)

GND

1155 TA02

1155 TA01

*SURFACE MOUNT

1

LTC1155

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(Note 1)

ABSOLUTE AXI U RATI GS

Supply Voltage ........................................................ 22V

Input Voltage ...................... (V_S+0.3V) to (GND – 0.3V)

Gate Voltage .........................(V_S+24V) to (GND – 0.3V)

Current (Any Pin).................................................. 50mA

Storage Temperature Range ................. – 65°C to 150°C

Operating Temperature Range

LTC1155C................................................ 0°C to 70°C

LTC1155I........................................... –40°C to 85°C

LTC1155M........................................ – 55°C to 125°C

Lead Temperature Range (Soldering, 10 sec.)...... 300°C

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PACKAGE RDER I FOR ATIO

ORDER PART

TOP VIEW

NUMBER

DS1

G1

1

2

3

4

8

7

6

5

DS2

G2

DS1

G1

1

2

3

4

8

7

6

5

DS2

G2

LTC1155CN8

LTC1155CJ8

LTC1155IN8

LTC1155MJ8

LTC1155CS8

LTC1155IS8

GND

IN1

V

S

GND

IN1

V

S

IN2

S8 PART MARKING

J8 PACKAGE

N8 PACKAGE

S8 PACKAGE

8-LEAD PLASTIC SO

8-LEAD CERDIP 8-LEAD PDIP

1155

1155I

T_JMAX= 150°C, θ_JA= 100°C/W (J8)

T_JMAX= 100°C, θ_JA= 130°C/W (N8)

T_JMAX= 100°C, θ_JA= 150°C/W

ELECTRICAL CHARACTERISTICS

The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T_A= 25°C.

V_S= 4.5V to 18V, unless otherwise noted.

LTC1155M

TYP

LTC1155C/LTC1155I

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

18

MIN

TYP

MAX

UNITS

V

S

Supply Voltage

●

4.5

18

I

Quiescent Current OFF

Quiescent Current ON

Input High Voltage

Input Low Voltage

Input Current

V

= 0V, V = 5V (Note 2)

8

20

8

20

µA

V

Q

IN

S

V = 5V, V = 5V (Note 3)

S

85

120

400

85

120

400

IN

V = 12V, V = 5V (Note 3)

S

180

IN

V

●

2.0

INH

0.8

V

INL

I

0V < V < V

S

±1.0

µA

pF

IN

C

V

Input Capacitance

Drain Sense Threshold Voltage

5

IN

80

75

100

120

125

80

75

100

120

125

mV

SEN

●

I

Drain Sense Input Current

Gate Voltage Above Supply

0V < V

< V

S

±0.1

µA

SEN

V

-V

V = 5V

●

6.0

7.5

15

6.8

8.5

18

9.0

15

25

6.0

7.5

15

6.8

8.5

18

9.0

15

25

V

GATE

S

V = 6V

S

V = 12V

S

t

Turn ON Time

V = 5V, C

Time for V

= 1000pF

GATE

ON

S

> V + 2V

50

200

250

1100

750

2000

50

200

250

1100

750

2000

µs

GATE

S

> V + 5V

S

V = 12V, C

Time for V

= 1000pF

S

GATE

> V + 5V

50

120

180

450

500

1200

50

120

180

450

500

1200

µs

S

> V + 10V

S

2

LTC1155

ELECTRICAL CHARACTERISTICS

The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at T_A= 25°C.

V_S= 4.5V to 18V, unless otherwise noted.

LTC1155M

TYP

LTC1155C/LTC1155I

SYMBOL

PARAMETER

CONDITIONS

V = 5V, C = 1000pF

GATE

MIN

10

5

MAX

60

MIN

10

5

TYP

MAX

UNITS

µs

t

Turn OFF Time

OFF

SC

S

Time for V

< 1V

36

26

16

36

60

GATE

V = 12V, C

Time for V

= 1000pF

< 1V

S

GATE

60

26

60

µs

t

Short-Circuit Turn OFF Time

V = 5V, C

Time for V

= 1000pF

GATE

S

< 1V

30

16

30

µs

GATE

V = 12V, C

Time for V

= 1000pF

< 1V

S

GATE

5

30

5

16

30

µs

Note 1: Absolute Maximum Ratings are those values beyond which the life

of a device may be impaired.

Note 2: Quiescent current OFF is for both channels in OFF condition.

Note 3: Quiescent current ON is per driver and is measured independently.

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TYPICAL PERFOR A CE CHARACTERISTICS

Standby Supply Current

Supply Current/Side (ON)

High Side Gate Voltage

1000

900

800

700

600

24

22

20

18

16

50

45

40

35

30

V

T

= V = 0V

IN2

V

T

OR V = 2V

IN2

IN1

= 25°C

J

500

400

300

200

100

0

14

12

10

8

25

20

15

10

5

6

4

0

5

10

15

20

0

5

10

15

20

0

5

10

15

20

SUPPLY VOLTAGE (V)

1155 G02

1155 TPC03

1155 G01

Input Threshold Voltage

Drain Sense Threshold Voltage

Low Side Gate Voltage

2.4

2.2

2.0

1.8

1.6

150

140

130

120

110

30

27

24

21

18

V

ON

1.4

1.2

1.0

0.8

0.6

0.4

100

90

80

70

60

50

15

12

9

OFF

6

3

0

5

10

15

20

0

5

10

15

20

0

2

4

6

8

10

SUPPLY VOLTAGE (V)

1155 G04

1155 G05

1155 G06

3

LTC1155

TYPICAL PERFOR A CE CHARACTERISTICS

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Turn ON Time

Turn OFF Time

Short-Circuit Turn OFF Delay Time

1000

900

800

700

600

50

45

40

35

30

50

45

40

35

30

C

= 1000pF

C

= 100pF

GATE

C

= 1000pF

GATE

TIME FOR V

< 1V

TIME FOR V

< 1V

GATE

500

400

300

200

100

0

25

20

15

10

5

25

20

15

10

5

V

= V –1V

S

SEN

NO EXTERNAL DELAY

V

= 5V

GS

V

GS

= 2V

0

5

10

15

20

0

5

10

15

20

0

5

10

15

20

SUPPLY VOLTAGE (V)

1155 G07

1155 G08

1155 G09

Standby Supply Current

Supply Current Per Side (ON)

Input ON Threshold

50

45

2.4

2.2

1000

900

40

35

2.0

1.8

800

700

30

25

20

15

10

5

1.6

1.4

1.2

1.0

0.8

0.6

0.4

600

500

400

300

200

100

0

V

= 5V

S

V

S

= 18V

V

= 12V

S

V

= 5V

S

V

S

= 5V

0

–50 –25

0

25

50

75 100 125

–50 –25

0

25

50

75 100 125

–50 –25

0

25

50

75 100 125

TEMPERATURE (°C)

1155 G10

1155 G12

1155 G11

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PIN FUNCTIONS

Input Pin

few hundred kΩ). Care should be taken to minimize any

loading of this pin by parasitic resistance to ground or

supply.

The LTC1155 logic input is a high impedance CMOS gate

and should be grounded when not in use. These input pins

have ESD protection diodes to ground and supply and,

therefore, should not be forced beyond the power supply

rails.

Supply Pin

The supply pin of the LTC1155 serves two vital purposes.

The first is obvious: it powers the input, gate drive,

regulation and protection circuitry. The second purpose is

less obvious: it provides a Kelvin connection to the top of

the two drain sense resistors for the internal 100mV

reference. The supply pin should be connected directly to

the power supply source as close as possible to the top of

the two sense resistors.

Gate Drive Pin

The gate drive pin is either driven to ground when the

switch is turned OFF or driven above the supply rail when

the switch is turned ON. This pin is a relatively high

impedance when driven above the rail (the equivalent of a

4

LTC1155

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PIN FUNCTIONS

The supply pin of the LTC1155 should not be forced below

ground as this may result in permanent damage to the

device. A 300Ω resistor should be inserted in series with

the ground pin if negative supply voltages are anticipated.

This pin is also a high impedance CMOS gate with ESD

protectionand, therefore, shouldnotbeforcedbeyondthe

power supply rails. To defeat the over current protection,

short the drain sense to supply.

Some loads, such as large supply capacitors, lamps or

motors require high inrush currents. An RC time delay

must be added between the sense resistor and the drain

sense pin to ensure that the drain sense circuitry does not

false trigger during start-up. This time constant can be set

fromafewmicrosecondstomanyseconds.However,very

longdelaysmayputtheMOSFETinriskofbeingdestroyed

by a short-circuit condition (see Applications Information

section).

Drain Sense Pin

As noted previously, the drain sense pin is compared

against the supply pin voltage. If the voltage at this pin is

morethan100mVbelowthesupplypin, theinputlatchwill

be reset and the MOSFET gate will be quickly discharged.

Cycle the input to reset the short-circuit latch and turn the

MOSFET back on.

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BLOCK DIAGRA

V

S

DRAIN

SENSE

ANALOG SECTION

100mV

REFERENCE

10µs

DELAY

COMP

LOW STANDBY

CURRENT

REGULATOR

GATE CHARGE

AND DISCHARGE

CONTROL LOGIC

ANALOG

DIGITAL

GATE

R

S

TTL-TO-CMOS

CONVERTER

VOLTAGE

REGULATORS

INPUT

LATCH

IN

ONE

SHOT

OSCILLATOR

AND CHARGE

PUMP

FAST/SLOW

GATE CHARGE

LOGIC

GND

1155 BD

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OPERATIO

The LTC1155 contains two independent power MOSFET

gate drivers and protection circuits (refer to the Block

Diagram for details). Each half of the LTC1155 consists of

the following functional blocks:

to CMOS converter output enables the rest of the circuitry.

In this way the power consumption is kept to a minimum

in the standby mode.

Internal Voltage Regulation

TTL and CMOS Compatible Inputs

The output of the TTL to CMOS converter drives two

regulated supplies which power the low voltage CMOS

logicandanalogblocks.Theregulatoroutputsareisolated

from each other so that the noise generated by the charge

pump logic is not coupled into the 100mV reference or the

analog comparator.

Each driver input has been designed to accommodate a

wide range of logic families. The input threshold is set at

1.3V with approximately 100mV of hysteresis.

A voltage regulator with low standby current provides

continuous bias for the TTL to CMOS converters. The TTL

5

LTC1155

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OPERATIO

Gate Charge Pump

lead. If the drop across this resistor exceeds the internal

100mV threshold, the input latch is reset and the gate is

quickly discharged by a large N-channel transistor.

Gate drive for the power MOSFET is produced by an

adaptive charge pump circuit that generates a gate voltage

substantially higher than the power supply voltage. The

charge pump capacitors are included on-chip and, there-

fore, no external components are required to generate the

gate drive.

Controlled Gate Rise and Fall Times

When the input is switched ON and OFF, the gate is

charged by the internal charge pump and discharged in a

controlled manner. The charge and discharge rates have

been set to minimize RFI and EMI emissions in normal

operation. If a short circuit or current overload condition

is encountered, the gate is discharged very quickly (typi-

cally a few microseconds) by a large N-channel transistor.

Drain Current Sense

The LTC1155 is configured to sense the drain current of

the power MOSFET in high side applications. An internal

100mV reference is compared to the drop across a sense

resistor (typically 0.002Ω to 0.1Ω) in series with the drain

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PPLICATI

A

S I FOR ATIO

V

= 5.0V

S

Protecting the MOSFET

R

C

SEN

DLY

TheMOSFETisprotectedagainstdestructionbyremoving

drive from the gate as soon as an overcurrent condition is

detected. Resistive and inductive loads can be protected

with no external time delay. Large capacitive or lamp

loads, however, require that the overcurrent shutdown

functionbedelayed long enoughtostarttheload butshort

enough to ensure the safety of the MOSFET.

0.03Ω

0.22µF

R

270k

DLY

V

S

DS1

G1

IN1

LTC1155

GND

IRLZ34

LOAD

Example Calculations

GND

ConsiderthecircuitofFigure1. ApowerMOSFETisdriven

by one side of an LTC1155 to switch a high inrush current

load. The drain sense resistor is selected to limit the

maximum DC current to 3.3A.

1155 F01

Figure 1. Adding an RC Delay

drops 0.1V at 2A and, therefore, dissipates 200mW in

normal operation (no heat sinking required).

R_SEN= V_{SEN TRIP}

/I

= 0.1/3.3A

Iftheoutputisshortedtoground, thecurrentthroughthe

FET rises rapidly and is limited by the R_DS(ON)of the FET,

the drain sense resistor and the series resistance be-

tween the power supply and the FET. Series resistance in

the power supply can be substantial and attributed to

many sources including harness wiring, PCB traces,

supply capacitor ESR, transformer resistance or battery

resistance.

= 0.03Ω

A time delay is introduced between R_SENand the drain

sense pin of the LTC1155 which provides sufficient delay

to start a high inrush load such as large supply capacitors.

In this example circuit, we have selected the IRLZ34

because of its low R_{DS(ON )}(0.05Ω with V_GS= 5V). The FET

6

LTC1155

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PPLICATI

A

S I FOR ATIO

For this example, we assume a worst-case scenario; i.e.,

that the power supply to the power MOSFET is “hard” and

provides a constant 5V regardless of the current. In this

case, the current is limited by the R_DS(ON)of the MOSFET

and the drain sense resistance. Therefore:

Graphical Approach to Selecting R_DLYand C_DLY

Figure 2 is a graph of normalized overcurrent shutdown

time versus normalized MOSFET current. This graph can

be used instead of the above equation to calculate the RC

time constant. The Y axis of the graph is normalized to one

RC time constant. The X axis is normalized to the set

current. (The set current is defined as the current required

to develop 100mV across the drain sense resistor).

I_PEAK= V_SUPPLY/0.08Ω

= 62.5A

The drop across the drain sense resistor under these

conditions is much larger than 100mV and is equal to the

drain current times the sense resistance:

10

V_DROP= (I_PEAK)(R_SEN

= 1.88V

)

1

By consulting the power MOSFET data sheet SOA graph,

we note that the IRLZ34 is capable of delivering 62.5A at

a drain-to-source voltage of 3.12V for approximately

10ms.

0.1

0.01

1

2

5

10

20

50 100

AnRCtimeconstantcannowbecalculatedwhichsatisfies

this requirement:

MOSFET CURRENT (1 = SET CURRENT)

1155 F02

Figure 2. Shutdown Time vs MOSFET Current

–t

RC =

Note that the shutdown time is shorter for increasing

levels of MOSFET current. This ensures that the total

energy dissipated by the MOSFET is always within the

bounds established by the MOSFET manufacturer for safe

operation.

V_SEN

In 1−

R_SEN• I_MAX

– 0.01

RC =

0.10

In 1−

In the example presented above, we established that the

power MOSFET should not be allowed to pass 62.5A for

more than 10ms. 62.5Aisroughly 18 times the set current

of 3.3A. By drawing a line up from 18 and reflecting it off

the curve, we establish that the RC time constant should

be set at 10ms divided by 0.054, or 180ms. Both methods

result in the same conclusion.

0.030 • 62.5

= – 0.01/–0.054

= 182ms

This time constant should be viewed as a maximum safe

delay time and should be reduced if the competing

requirement of starting a high inrush current load is less

stringent; i.e., if the inrush time period is calculated at

20ms, the RC time constant should be set at roughly two

or three times this time period and not at the maximum of

182ms. A 60ms time constant would be produced with a

270k resistor and a 0.22µF capacitor (as shown in

Figure 1).

Using a Speed Up Diode

A way to further reduce the amount of time that the power

MOSFET is in a short-circuit condition is to “bypass”the

delayresistorwithasmallsignaldiodeasshowninFigure

3. The diode will engage when the drop across the drain

sense resistor exceeds 0.7V, providing a direct path to the

7

LTC1155

PPLICATI

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A

S I FOR ATIO

V

= 5.0V

S

IftheMOSFETisturnedONandthepowersupply(battery)

removed, the inductor current is delivered by the supply

capacitor. The supply capacitor must be large enough to

deliver the energy demanded by the discharging inductor.

If the storage capacitor is too small, the supply lead of the

LTC1155 may be pulled below ground, permanently

destroying the device.

C

R

DLY

SEN

0.22µF

0.025Ω

R

270k

DLY

V

S

DS1

G1

D1

1N4148

IN1

LTC1155

GND

IRLZ34

Consider the case of a load inductance of 1mH which is

supporting 3A when the 6V power supply connection is

interrupted. A supply capacitor of at least 250µF is

required to prevent the supply lead of the LTC1155 from

being pulled below ground (along with any other circuitry

tied to the supply).

LOAD

GND

1155 F03

Figure 3. Using a Speed-Up Diode

Any wire between the power MOSFET source and the load

will add a small amount of parasitic inductance in series

with the load (approximately 0.4µH/foot). Bypass the

power supply lead of the LTC1155 with a minimum of

10µF to ensure that this parasitic load inductance is

discharged safely, even if the load is otherwise resistive.

sense pin and dramatically reducing the amount of time

the MOSFET is in an overload condition. The drain sense

resistor value is selected to limit the maximum DC current

to 4A. Above 28A, the delay time drops to 10µs.

Switched Supply Applications

Large inductive loads, such as solenoids, relays and

motorsstoreenergywhichmustbedirectedbacktoeither

the power supply or to ground when the supply voltage is

interrupted (see Figure 4). In normal operation, when the

switch is turned OFF, the energy stored in the inductor is

harmlessly absorbed by the MOSFET; i.e., the current

flows out of the supply through the MOSFET until the

inductor current falls to zero.

Large Inductive Loads

Large inductive loads (>0.1mH) may require diodes con-

nected directly across the inductor to safely divert the

stored energy to ground. Many inductive loads have these

diodes included. Ifnot, adiode ofthe propercurrentrating

should be connected across the load to safely divert the

stored energy.

Reverse-Battery Protection

+

R

The LTC1155 can be protected against reverse-battery

conditions by connecting a resistor in series with the

ground lead as shown in Figure 5. The resistor limits the

supplycurrenttolessthan50mAwith–12Vapplied. Since

the LTC1155 draws very little current while in normal

operation, the drop across the ground resistor is minimal.

SEN

C

S

DLY

0.025Ω

R

DLY

V

S

DS1

IN1

LTC1155

GND

IRLZ34

G1

The TTL or CMOS driving logic is protected against

reverse-battery conditions by the 100k input current lim-

iting resistor. The addition of 100k resistance in series

with the input pin will not affect the turn ON and turn OFF

times which are dominated by the controlled gate charge

and discharge periods.

L

LOAD

GND

1155 F04

Figure 4. Switched Supply

8

LTC1155

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PPLICATI

A

S

I FOR ATIO

V

= 4.5V TO 18V

S

18.6V and pulls the drain sense pin 0.6V below the supply

pin voltage.

R

C

SEN

DLY

The supply voltage is limited to 18.6V and the gate drive is

immediately removed from the MOSFET to ensure that it

cannot conduct during the overvoltage period. The gate of

the MOSFET will be latched OFF until the supply transient

is removed and the input turned OFF and ON again.

R

DLY

V

S

DS1

G1

+

10µF

25V

IN1

LTC1155

GND

100k

V

= 4.5V TO 18V

S

5V

510Ω

300Ω

1/4W

LOAD

GND

1155 F05

10k

1N4148

V

S

DS1

Figure 5. Reverse Battery Protection

IN1

LTC1155

GND

Overvoltage Protection

G1

The MOSFET and load can be protected against overvolt-

age conditions by using the circuit of Figure 6. The drain

sense function is used to detect an overvoltage condition

and quickly discharge the power MOSFET gate. The 18V

zener diode conducts when the supply voltage exceeds

18V

LOAD

GND

1155 F06

Figure 6. Overvoltage Shutdown and Protection

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TYPICAL APPLICATI S

Dual 2A Autoreset Electronic Fuse

5V

+

0.1µF

0.03Ω

10µF

30k

DS1

G1

V

DS2

G2

S

1/2 SI9956DY

1N4148

LTC1155

GND

100k

8

LMC555

1

4

f

= 1Hz

750k

O

3

IN1

IN2

1N4148

OUT 1

2

6

OUT 2

1.0µF

ALL COMPONENTS SHOWN ARE SURFACE MOUNT

1155 TA03

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LTC1155

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TYPICAL APPLICATI S

High Side Driver with V_DSSense Short-Circuit Shutdown

4.5V TO 6V

X-NOR Fault Detection

4.5V TO 6V

+

10µF

30k

0.1Ω

V

S

DS1

G1

DS1

G1

5V

*

1/2

LTC1155

1/2

LTC1155

IN1

10k

IRLZ24

IRLD024

GND

100k

0.01µF

270k

FAULT

LOAD

74C266

LOAD

1155 TA05

*ANY 74C OR 74HC LOGIC GATE.

MOSFET SHUTS DOWN IF V > 1V

DS

1155 TA04

Truth Table

IN

OUT

CONDITION

Switch OFF

Short Circuit

Open Load

Switch ON

FLT

1

0

1

0

1

Low Side Driver with Drain End Current Sensing

Low Side Driver with Source End Current Sensing

5V

V

LOAD

5V

+

10µF

51Ω

10µF

0.05Ω

5%

V

S

LOAD

DS1

G1

V

S

DS1

G1

1/2

LTC1155

IN1

1/2

LTC1155

LOAD

IN1

SMP25N05

GND

SMP25N05

GND

7

3

2

+

6

®

1155 TA06

LT 1077*

–

0.02Ω

5%

4

51Ω

1155 TA07

*DO NOT SUBSTITUTE. MUST BE A PRECISION, SINGLE

SUPPLY, MICROPOWER OP AMP (I < 60µA)

Q

10

LTC1155

U

O

TYPICAL APPLICATI S

Automotive High Side Driver with Reverse-Battery

and High Voltage Transient Protection

5V/3A Extremely Low Voltage Drop Regulator with 10µA Standby

Current and Short-Circuit Protection

5.2V TO 6V

9V TO 16V

+

10µF

C

**

DLY

R

10µF

0.1µF

0.02Ω

5%

**

300k

DLY

V

S

5V

DS1

G1

DS1

G1

100k*

1/2

LTC1155

1/2

LTC1155

18V

IN1

ON/OFF

FAULT

1N4746A

100k

IRLR024

MTP50N05E

GND

18V

200pF

1N4746A

M

10k

8

0.1µF

300Ω

1/4W

1

VALVE,

ETC.

3

4

5V/3A

LT1431

7

+

1155 TA08

*PROTECTS TTL/CMOS GATES DURING HIGH VOLTAGE

TRANSIENT OR REVERSE BATTERY

470µF*

6

5

**NOT REQUIRED FOR INDUCTIVE OR RESISTIVE LOADS

*CAPACITOR ESR SHOULD BE LESS THAN 0.5Ω

1155 TA09

Using the Second Channel for Fault Detection

Bootstrapped Gate Drive for (100Hz < F_O< 10kHz)

4.5V TO 5.5V

9V TO 18V

+

10µF

0.1µF*

100k

0.01µF

1N4148

0.01Ω

0.05Ω

5V

30k*

30k

FLT

µP OR

CONTROL

LOGIC

DS1

G2

V

DS2

V

S

DS1

1N4148

µP OR

CMOS/TTL

LOGIC

1/2

100k

LTC1155

GND

IN1

LTC1155

SMD25N05-45L

IN2

IN1

2N2222

G1

0.1µF

ON/OFF

G1

GND

IRFZ44

LOAD

18V

V

= 2V – 0.6V

S

GATE

2N3906

1155 TA10

LOAD

NOTE:

DRAIN SENSE 2 IS USED TO DETECT A FAULT IN CHANNEL 1.

GATE 2 PULLS DOWN ON DRAIN SENSE 1 TO DISCHARGE

THE MOSFET AND REPORT THE FAULT TO THE µP

RISE AND FALL TIMES ARE βETA TIMES FASTER

1155 TA11

*NOT REQUIRED FOR RESISTIVE OR INDUCTIVE LOADS

11

LTC1155

TYPICAL APPLICATI S

U

O

Logic Controlled Boost Mode Switching Regulator with Short-Circuit Protection and 8µA Standby Current

4.75V TO 5.25V

+

100µF

0.33µF

100k

0.02Ω

V

S

DS1

G1

1/2

LTC1155

FROM µP, ETC.

IN1

MTM25N05L

GND

5V SWITCHED

12V/1A

FAULT

1N5820

50µH*

1N4148

5

4

10.7k

1%

1

+

LT1170

2

2200µF

68µF

1k

1µF

3

1.24k

1%

*COILTRONICS CTX-7-52

1155 TA12

High Efficiency 60Hz Full-Wave Synchronous Rectifier

**

IRFZ44*

D

9V/3A

DC

18V

S

1N4148

1N4746A

100k

10k

2

1N4148

DS1

IN1

V

DS2

G1

S

12.6VCT

10Ω

–

+

7

LT1006

4

110V AC

+

6

4700µF

16V

LTC1155

GND

1N4148

3

IN2

G2

1N4148

10µF

+

0.03Ω

100k

10k

18V

1N4746A

1N4001

S

D

IRFZ44*

**

MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA

*NO HEATSINK REQUIRED. CASES (DRAINS) CAN BE TIED TOGETHER

**INTERNAL BODY DIODE OF MOSFET

1155 TA13

12

LTC1155

U

O

TYPICAL APPLICATI S

High Efficiency 60Hz Full-Wave Synchronous Rectifier

9V/3A

DC

10k

100k

4 × IRFZ44*

D

1N4148

DS2

IN1

V

DS1

G1

S

–

+

2

3

7

110V AC

6.3V AC

+

S

D

S

D

6

4700µF

16V

**

LTC1155

GND

LT1006

IN2

G2

4

S

18V

1N4746A

18V

1N4746A

10k

100k

10Ω

0.03Ω

1155 TA14

MOSFETs ARE SYNCHRONOUSLY ENHANCED WHEN RECTIFIER CURRENT EXCEEDS 300mA

*NO HEATSINK REQUIRED

**INTERNAL BODY DIODE OF MOSFET

Push-Pull Driver with Shoot-Through Current Lockout (f_O< 100Hz)

4.5V TO 6V

5V

0.01Ω

10µF

0.1µF

300k

100k

DS1

IN1

V

DS2

G1

S

*

HI/LO

IRLZ24

74HC02

LTC1155

GND

V

OUT

IN2

G2

IRFZ24

1N4148

*OPPOSING GATE MUST DROP BELOW 2V BEFORE THE OTHER IS CHARGED

1155 TA15

13

LTC1155

TYPICAL APPLICATI S

U

O

Full H-Bridge Driver with Shoot-Through Current Lockout and Stall Current Shutdown (f_O< 100Hz)

4.5V TO 6V

0.01Ω

10µF

0.1µF

100k

5V

DIRECTION

74HC02

DS1

IN1

V

S

DS2

G1

IRLZ44

*

LTC1155

GND

IN2

VN2222L

G2

M

DISABLE

*

IRFZ44

VN2222L

1155 TA16

*OPPOSING GATES ARE HELD OFF UNTIL OTHER GATES DROP BELOW 1.5V

DC Motor Speed and Torque Control for Cordless Tools and Appliances

100Ω

+

6V

0.1µF

1.1k

+

47µF

16V

0.1Ω

10k

TORQUE

ADJUST

300k

1M

1A TO

10A

100k

MAX

+

DS1

IN1

V

DS2

G1

S

1/2

LT1017

IRFZ24

10k

SPEED

ADJUST

120k

–

LTC1155

GND

+

1M

1/2

LT1017

IN2

G2

SMALL DC APPLIANCE

OR TOOL MOTOR

M

–

0.0033µF

100k

1155 TA17

SPEED IS PROPORTIONAL TO PULSE WIDTH. TORQUE IS PROPORTIONAL TO CURRENT

14

LTC1155

U

PACKAGE DESCRIPTIO

Dimensions in inches (milimeters) unless otherwise noted.

J8 Package

8-Lead CERDIP (Narrow 0.300, Hermetic)

(LTC DWG # 05-08-1110)

0.405

(10.287)

MAX

0.005

(0.127)

MIN

0.200

(5.080)

MAX

0.300 BSC

(0.762 BSC)

CORNER LEADS OPTION

(4 PLCS)

6

5

8

7

0.015 – 0.060

0.023 – 0.045

(0.584 – 1.143)

HALF LEAD

OPTION

(0.381 – 1.524)

0.025

(0.635)

RAD TYP

0.220 – 0.310

(5.588 – 7.874)

0.008 – 0.018

(0.203 – 0.457)

0° – 15°

0.045 – 0.068

(1.143 – 1.727)

FULL LEAD

OPTION

J8 1197

1

2

3

4

0.045 – 0.068

(1.143 – 1.727)

0.125

3.175

MIN

0.100 ± 0.010

(2.540 ± 0.254)

0.014 – 0.026

(0.360 – 0.660)

NOTE: LEAD DIMENSIONS APPLY TO SOLDER DIP/PLATE

OR TIN PLATE LEADS

N8 Package

8-Lead PDIP (Narrow 0.300)

(LTC DWG # 05-08-1510)

0.400*

(10.160)

MAX

0.130 ± 0.005

(3.302 ± 0.127)

0.300 – 0.325

(7.620 – 8.255)

0.045 – 0.065

(1.143 – 1.651)

8

7

6

5

4

0.065

(1.651)

TYP

0.255 ± 0.015*

(6.477 ± 0.381)

0.009 – 0.015

(0.229 – 0.381)

0.125

(3.175)

MIN

0.020

(0.508)

MIN

+0.035

–0.015

1

2

3

0.325

N8 1197

0.100 ± 0.010

(2.540 ± 0.254)

0.018 ± 0.003

(0.457 ± 0.076)

+0.889

8.255

(

)

–0.381

*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.

MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.010 INCH (0.254mm)

S8 Package

8-Lead Plastic Small Outline (Narrow 0.150)

(LTC DWG # 05-08-1610)

0.189 – 0.197*

(4.801 – 5.004)

0.010 – 0.020

(0.254 – 0.508)

7

5

8

6

× 45°

0.053 – 0.069

(1.346 – 1.752)

0.004 – 0.010

(0.101 – 0.254)

0.008 – 0.010

(0.203 – 0.254)

0°– 8° TYP

0.150 – 0.157**

(3.810 – 3.988)

0.228 – 0.244

(5.791 – 6.197)

0.016 – 0.050

0.406 – 1.270

0.050

(1.270)

TYP

0.014 – 0.019

(0.355 – 0.483)

*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH

SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE

SO8 0996

**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD

FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE

1

2

3

4

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-

tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.

15

LTC1155

TYPICAL APPLICATI S

U

O

Isolated High Voltage High Side Switch with Circuit Breaker

6V TO 12V

1N5817

1k

1N4148

1k

C

0.1µF

200V

10mA

CONTROL

90V

4N28

1/6 74C14

B

E

100k

DS1

IN1

V

DS2

G1

S

+

6A MAX

10µF

25V

1N4148

100pF

LTC1155

GND

1k

1N5817

IN2

G2

2N2222

18V

1N4746A

0.1Ω

1M

M

MUR420

1155 TA18

Isolated Solid-State AC Relay with Circuit Breaker

IN/OUT

18V

1N4746A

18V

1N4746A

IRFZ24

5V

0.1µF

300Ω

0.01µF

0.05Ω

1/6 74C14

100k

5.6V

1N5817

1N4690A

100k

DS1

IN1

V

DS2

G1

S

0.0022µF

IRFZ24

+

600Ω

1µF

100k

LTC1155

GND

IN/OUT

24V AC

2A MAX

1N4148

IN2

G2

ON/OFF

100k

T1*

1/6 74C14

EQUIVALENT FUNCTION

2A

IN/OUT

ON/OFF

IN/OUT

*PICO ELECTRONICS F-28115 OR EQUIVALENT

1155 TA19

RELATED PARTS

PART NUMBER

LTC1153

LT1161

DESCRIPTION

COMMENTS

Auto-Reset Electronic Circuit Breaker

Programmable Trip Current, Fault Status Output

Quad Protected High Side MOSFET Driver

Triple 1.8V to 6V High Side MOSFET Driver

Dual 24V High Side MOSFET Driver

8V to 48V Supply Range, Individual Short-Circuit Protection

0.01µA Standby Current, Triple Driver in SO-8 Package

Operates from 9V to 24V, Short-Circuit Protection

LTC1163

LTC1255

LTC1477

LTC1623

LTC1710

Protected Monolithic High Side Switch

SMBus Dual High Side Switch Controller

SMBus Dual Monolithic High Side Switch

Low R

0.07Ω Switch, 2A Short-Circuit Protected

DS(ON)

2-Wire SMBus Serial Interface, Built-In Gate Charge Pumps

Two Low R

0.4Ω/300mA Switches in 8-Lead MSOP Package

1155fa LT/TP 0399 2K REV A • PRINTED IN USA

LINEAR TECHNOLOGY CORPORATION 1991

DS(ON)

LinearTechnology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

16

●

(408)432-1900 FAX:(408)434-0507 www.linear-tech.com


型号：	LTC1155IN8
厂家：	Linear
描述：	Dual High Side Micropower MOSFET Driver 双高端微MOSFET驱动器驱动器
文件：	总16页 (文件大小：344K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LTC1155IN8 [Linear]

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