LTC1693-2CS8#TRPBF [Linear]
LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C;
| 型号： | LTC1693-2CS8#TRPBF |
| 厂家： | 
Linear |
| 描述： | LTC1693 - High Speed Single/Dual N-Channel MOSFET Drivers; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C 驱动 光电二极管 接口集成电路 驱动器 |
| 文件： | 总20页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC1693
High Speed Single/Dual
N-Channel MOSFET Drivers
U
FEATURES
DESCRIPTIO
The LTC®1693 family drives power N-channel MOSFETs
at high speed. The 1.5A peak output current reduces
switching losses in MOSFETs with high gate capacitance.
■
Dual MOSFET Drivers in SO-8 Package
or Single MOSFET Driver in MSOP Package
■
1GΩ Electrical Isolation Between the Dual Drivers
Permits High/Low Side Gate Drive
The LTC1693-1 contains two noninverting drivers while
the LTC1693-2 contains one noninverting and one invert-
ing driver. These dual drivers are electrically isolated and
independent. The LTC1693-3 is a single driver with an
output polarity select pin.
■
1.5A Peak Output Current
■
16ns Rise/Fall Times at VCC = 12V, CL = 1nF
■
Wide VCC Range: 4.5V to 13.2V
■
CMOS Compatible Inputs with Hysteresis,
Input Thresholds are Independent of VCC
■
■
■
All MOSFET drivers offer VCC independent CMOS input
thresholds with 1.2V of typical hysteresis. They can level-
shifttheinputlogicsignalupordowntotherail-to-railVCC
drive for the external MOSFET.
Driver Input Can Be Driven Above VCC
Undervoltage Lockout
Thermal Shutdown
U
APPLICATIO S
TheLTC1693containsanundervoltagelockoutcircuitand
a thermal shutdown circuit that disable the external
N-channel MOSFET gate drive when activated.
■
Power Supplies
■
High/Low Side Drivers
■
Motor/Relay Control
Line Drivers
Charge Pumps
TheLTC1693-1andLTC1693-2comeinan8-leadSOpack-
age. The LTC1693-3 comes in an 8-lead MSOP package.
, LTC and LT are registered trademarks of Linear Technology Corporation.
■
■
U
TYPICAL APPLICATION
Two Transistor Forward Converter
V
IN
48VDC
C1
330µF
63V
C2
1.5µF
63V
+
±10%
R1
0.068Ω
D1
RETURN
MURS120
L1
1.5µH
Q1
T1
13:2
MTD20NO6HD
V
12V
OUT
1.5V/15A
C5
C3
4700pF
25V
R2
5.1Ω
D2
MURS120
•
•
C4
LTC1693CS8-2
1µF
1
2
3
4
8
7
6
5
0.1µF
IN1
GND1 OUT1
IN2
GND2 OUT2
C7
V
CC1
R3
17
IN
249Ω
D3
C6
C11
0.1µF
12V
+
1%
MURS120
470µF
20
V
CC2
BOOST
6.3V
Q2
Si4420
×2
R4
C9
19
×8
Q4
Si4420
1.24k
1%
LT1339
TG
1800pF
5%
1
2
C8
1µF
SYNC
5V
Q3
BAT54
1µF
NPO
18
11
12
16
14
13
9
MTD20NO6HD
TS
+
REF
R5
2.49k
1%
R6 100Ω
4
RETURN
SL/ADJ
SENSE
R7 100Ω
D4
3
–
C
T
SENSE
MBRO530T1
LTC1693CS8-2
1
2
3
4
8
5
IN1
GND1 OUT1
IN2
GND2 OUT2
V
CC1
I
BG
PHASE
AVG
R8
301k
1%
7
6
5
6
SS
7
V
CC2
V
C
RUN/SHDN
10
V
V
FB
C10
REF
SGND PGND
15
C12
100pF
R9
12k
0.1µF
R10
10k
1%
C13
1µF
C1: SANYO 63MV330GX
C2: WIMA SMD4036/1.5/63/20/TR
C6: KEMET T510X477M006AS (×8)
L1: GOWANDA 50-318
8
C14
3300pF
C15
0.1µF
T1: GOWANDA 50-319
1693 TA01
1
LTC1693
ABSOLUTE MAXIMUM RATINGS
Supply Voltage (VCC) .............................................. 14V
Inputs (IN, PHASE) ................................... –0.3V to 14V
Driver Output ................................. –0.3V to VCC + 0.3V
GND1 to GND2 (Note 5) ..................................... ±100V
Junction Temperature.......................................... 150°C
W W U W
(Note 1)
Operating Ambient Temperature Range
C-Grade ................................................... 0°C to 70°C
I-Grade ................................................–40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
U
W U
PACKAGE/ORDER INFORMATION
TOP VIEW
TOP VIEW
TOP VIEW
IN1
GND1
IN2
1
2
3
4
8
7
6
5
V
IN1
GND1
IN2
1
2
3
4
8
7
6
5
V
CC1
CC1
IN 1
NC 2
PHASE 3
GND 4
8 V
CC
OUT1
OUT1
7 OUT
6 NC
5 NC
V
V
CC2
CC2
GND2
OUT2
GND2
OUT2
MS8 PACKAGE
8-LEAD PLASTIC MSOP
S8 PACKAGE
8-LEAD PLASTIC SO
S8 PACKAGE
8-LEAD PLASTIC SO
TJMAX = 150°C, θJA = 200°C/ W
TJMAX = 150°C, θJA = 135°C/ W
TJMAX = 150°C, θJA = 135°C/ W
S8 PART
MARKING
S8 PART
MARKING
MS8 PART
MARKING
ORDER PART
NUMBER
ORDER PART
NUMBER
ORDER PART
NUMBER
LTC1693-1CS8
LTC1693-1IS8
LTC1693-2CS8
LTC1693-2IS8
16931
16931I
16932
16932I
LTC1693-3CMS8
LTEB
Consult factory for Industrial and Military grade parts.
The ● denotes specifications which apply over the full operating
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
Supply Voltage Range
Quiescent Current
4.5
13.2
V
CC
I
LTC1693-1, LTC1693-2, IN1 = IN2 = 0V (Note 2)
LTC1693-3, PHASE = 12V, IN = 0V
●
●
400
200
720
360
1100
550
µA
µA
CC
I
Switching Supply Current
LTC1693-1, LTC1693-2, C
= 4.7nF, f = 100kHz
●
●
14.4
7.2
20
10
mA
mA
CC(SW)
OUT
IN
LTC1693-3, C
= 4.7nF, f = 100kHz
OUT
IN
Input
V
V
High Input Threshold
●
●
●
●
●
2.2
1.1
2.6
1.4
3.1
1.7
±10
6.5
45
V
V
IH
IL
Low Input Threshold
I
Input Pin Bias Current
±0.01
5.5
µA
V
IN
V
PHASE Pin High Input Threshold
PHASE Pin Pull-Up Current
(Note 3)
PHASE = 0V (Note 3)
4.5
10
PH
I
20
µA
PH
Output
V
V
High Output Voltage
I
I
= –10mA
= 10mA
●
●
11.92
11.97
30
V
mV
Ω
OH
OL
OUT
OUT
Low Output Voltage
75
R
R
Output Pull-Down Resistance
Output Pull-Up Resistance
Output Low Peak Current
Output High Peak Current
2.85
3.00
1.70
1.40
ONL
ONH
PKL
Ω
I
I
A
A
PKH
2
LTC1693
The ● denotes specifications which apply over the full operating
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are at TA = 25°C. VCC = 12V, unless otherwise noted.
SYMBOL PARAMETER
Switching Timing (Note 4)
CONDITIONS
MIN
TYP
MAX
UNITS
t
t
t
t
Output Rise Time
C
C
= 1nF
= 4.7nF
●
●
17.5
48.0
35
85
ns
ns
RISE
FALL
PLH
PHL
OUT
OUT
Output Fall Time
C
OUT
C
OUT
= 1nF
= 4.7nF
●
●
16.5
42.0
35
75
ns
ns
Output Low-High Propagation Delay
Output High-Low Propagation Delay
C
OUT
C
OUT
= 1nF
= 4.7nF
●
●
38.0
40.0
70
75
ns
ns
C
OUT
C
OUT
= 1nF
= 4.7nF
●
●
32
35
70
75
ns
ns
Driver Isolation
GND1-GND2 Isolation Resistance
R
ISO
LTC1693-1, LTC1693-2 GND1-to-GND2 Voltage = 75V
●
0.075
1
GΩ
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 4: All AC timing specificatons are guaranteed by design and are not
production tested.
Note 2: Supply current is the total current for both drivers.
Note 3: Only the LTC1693-3 has a PHASE pin.
Note 5: Only applies to the LTC1693-1 and LTC1693-2.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
IN Threshold Voltage
vs Temperature
IN Threshold Hysteresis
vs Temperature
IN Threshold Voltage vs VCC
2.75
2.50
3.00
1.4
1.3
1.2
1.1
V
CC
= 12V
T
= 25°C
V
= 12V
CC
A
2.75
2.50
V
IH
V
IH
2.25
2.00
1.75
1.50
1.25
2.25
2.00
1.75
1.50
1.25
V
-V
IH IL
1.0
0.9
0.8
V
IL
V
IL
1.00
1.00
9
11
12
5
6
7
8
10
–25
0
50
75 100 125
–50
25
–50 –25
0
25
50
75 100 125
V
(V)
TEMPERATURE (°C)
TEMPERATURE (°C)
CC
1693 G01
1693 G02
1693 G03
3
LTC1693
TYPICAL PERFOR A CE CHARACTERISTICS
U W
PHASE Threshold Voltage vs VCC
Rise/Fall Time vs VCC
Rise/Fall Time vs Temperature
20
19
18
17
16
15
14
13
12
11
10
6
5
4
3
24
22
T
= 25°C
OUT
= 100kHz
T
= 25°C
V
C
f
= 12V
= 1nF
A
A
CC
OUT
C
f
= 1nF
t
RISE
= 100kHz
IN
IN
V
PH(H)
20
18
16
14
12
t
FALL
t
RISE
V
PH(L)
t
FALL
2
1
0
10
9
11
12
–50
–25
0
25
50
75 100 125
5
6
7
8
10
9
11
12
5
6
7
8
10
TEMPERATURE (°C)
V
(V)
V
(V)
CC
CC
1693 G06
1693 G04
1693 G05
Rise/Fall Time vs COUT
Propagation Delay vs VCC
Propagation Delay vs Temperature
120
50
45
40
35
55
T
= 25°C
CC
= 100kHz
T
= 25°C
V
C
f
= 12V
= 1nF
OUT
IN
A
A
OUT
CC
V
f
= 12V
C
f
= 1nF
50
45
40
35
30
25
20
15
100
80
60
40
20
0
= 100kHz
= 100kHz
IN
IN
t
PLH
t
PHL
t
PLH
t
PHL
30
25
20
t
RISE
t
FALL
10
1
10
100
(pF)
1000
10000
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
5
6
7
8
9
10
11
12
C
OUT
V
CC
(V)
1693 G07
1693 G09
1693 G08
Output Saturation Voltage
vs Temperature
Quiescent Current
Propagation Delay vs COUT
vs VCC (Single Driver)
50
350
300
250
200
150
100
200
150
100
50
T
= 25°C
CC
= 100kHz
V
CC
= 12V
T
= 25°C
IN
A
A
V
= 12V
V
= 0V
f
IN
V
OH
(50mA) wrt V
CC
40
30
20
V
OL
(50mA)
t
PLH
t
PHL
V
OH
(10mA) wrt V
CC
V
OL
(10mA)
0
1
10
100
(pF)
1000
10000
–55 –35 –15
5
25 45 65 85 105 125
5
6
7
8
9
10
11
12
C
TEMPERATURE (°C)
V
CC
(V)
OUT
1693 G10
1693 G11
1693 G12
4
LTC1693
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Switching Supply Current
vs COUT (Single Driver)
VOL vs Output Current
100
90
80
70
60
50
40
30
20
10
0
300
250
T
= 25°C
CC
V
T
= 12V
A
CC
A
V
= 12V
= 25°C
200
150
V
OL
200kHz
100kHz
25kHz
100
50
0
750kHz
500kHz
1
10
100
(pF)
1000
10000
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
C
OUT
1693 G13
1693 G14
VOH vs Output Current
Thermal Derating Curves
1400
1200
1000
800
600
400
200
0
350
300
T
= 25°C
CC
A
T = 125°C
J
V
= 12V
250
LTC1693-1/LTC1693-2
V
OH
200
150
100
50
LTC1693-3
0
0
30
50 60 70 80 90 100
–55 –35 –15
5
25 45 65 85 105 125
10 20
40
OUTPUT CURRENT (mA)
AMBIENT TEMPERATURE (°C)
1693 G15
1693 G16
5
LTC1693
U
U
U
PIN FUNCTIONS
SO-8 Package (LTC1693-1, LTC1693-2)
MSOP Package (LTC1693-3)
IN1, IN2 (Pins 1, 3): Driver Inputs. The inputs have VCC
IN (Pin 1): Driver Input. The input has VCC independent
independent thresholds with 1.2V typical hysteresis to thresholds with hysteresis to improve noise immunity.
improve noise immunity.
NC (Pins 2, 5, 6): No Connect.
GND1, GND2 (Pins 2, 4): Driver Grounds. Connect to a
low impedance ground. The VCC bypass capacitor should
PHASE (Pin 3): Output Polarity Select. Connect this pin to
V
CC or leave it floating for noninverting operation. Ground
connect directly to this pin. The source of the external
MOSFET should also connect directly to the ground pin.
This minimizes the AC current path and improves signal
integrity. The ground pins should not be tied together if
isolation is required between the two drivers of the
LTC1693-1 and the LTC1693-2.
this pin for inverting operation. The typical PHASE pin
input current when pulled low is 20µA.
GND (Pin 4): Driver Ground. Connect to a low impedance
ground. The VCC bypass capacitor should connect directly
to this pin. The source of the external MOSFET should also
connect directly to the ground pin. This minimizes the AC
current path and improves signal integrity.
OUT 1, OUT2 (Pins 5, 7): Driver Outputs. The LTC1693-
1’s outputs are in phase with their respective inputs (IN1,
IN2). The LTC1693-2’s topside driver output (OUT1) is in
phase with its input (IN1) and the bottom side driver’s
output(OUT2)isoppositeinphasewithrespecttoitsinput
pin (IN2).
OUT (Pin 7): Driver Output.
VCC (Pin 8): Power Supply Input.
VCC1, VCC2 (Pins 6, 8): Power Supply Inputs.
W
BLOCK DIAGRA SM
8
8
7
8
7
V
V
V
CC
CC1
CC1
1
2
1
2
1
4
7
IN1
IN1
IN
OUT1
OUT1
OUT
GND1
GND1
GND
6
5
6
5
V
CC2
V
CC2
3
4
3
4
3
2
6
5
IN2
IN2
PHASE
NC
NC
NC
OUT2
OUT2
GND2
GND2
LTC1693-1
DUAL NONINVERTING DRIVER
LTC1693-2
LTC1693-3
SINGLE DRIVER WITH
POLARITY SELECT 1693 BD
TOPSIDE NONINVERTING DRIVER
AND BOTTOM SIDE INVERTING DRIVER
6
LTC1693
TEST CIRCUITS
1/2 LTC1693-1 OR 1/2 LTC1693-2
87V
V
CC1
8
7
4.7µF
0.1µF
IN1
OUT1
12V
1
2
P-P
4.7nF
75V
GND1
A
1/2 LTC1693-1 OR 1/2 LTC1693-2
12V
V
CC2
6
5
+
IN2
OUT2
75V
–
3
4
4.7µF
0.1µF
4.7nF
GND2
1693 TC03
1693 TC02
75V High Side Switching Test
LTC1693-1, LTC1693-2 Ground Isolation Test
V
CC
= 12V
4.7µF
0.1µF
IN
OUT
1nF OR 4.7nF
5V
t
< 10ns
RISE/FALL
1693 TC01
AC Parameter Measurements
W U
W
TI I G DIAGRA
INPUT RISE/FALL TIME <10ns
V
IH
INPUT
V
IL
NONINVERTING
OUTPUT
90%
10%
t
t
f
r
t
t
PHL
PLH
90%
10%
INVERTING
OUTPUT
t
f
t
r
t
t
PHL
PLH
1693 TD
7
LTC1693
U
W U U
APPLICATIONS INFORMATION
+
V
V
Overview
CC
TheLTC1693singleanddualdriversallow3V-or5V-based
digital circuits to drive power MOSFETs at high speeds. A
power MOSFET’s gate-charge loss increases with switch-
ingfrequencyandtransitiontime. TheLTC1693iscapable
of driving a 1nF load with a 16ns rise and fall time using a
L
EQ
(LOAD INDUCTOR
OR STRAY LEAD
INDUCTANCE)
V
DRAIN
LTC1693
C
C
GD
GS
P1
OUT
POWER
MOSFET
V
CC of 12V. This eliminates the need for higher voltage
supplies, such as 18V, to reduce the gate charge losses.
N1
The LTC1693’s 360µA quiescent current is an order of
magnitude lower than most other drivers/buffers. This
improves system efficiency in both standby and switching
operation. Since a power MOSFET generally accounts for
the majority of power loss in a converter, addition of the
LT1693toahighpowerconverterdesigngreatlyimproves
efficiency, using very little board space.
GND
1693 F01
Figure 1. Capacitance Seen by OUT During Switching
The LTC1693’s output peak currents are 1.4A (P1) and
1.7A (N1) respectively. The N-channel MOSFET (N1) has
higher current drive capability so it can discharge the
power MOSFET’s gate capacitance during high-to-low
signal transitions. When the power MOSFET’s gate is
pulled low by the LTC1693, its drain voltage is pulled high
byitsload(e.g., aresistororinductor). Theslewrateofthe
drain voltage causes current to flow back to the MOSFETs
gate through its gate-to-drain capacitance. If the MOSFET
driver does not have sufficient sink current capability (low
output impedance), the current through the power
MOSFET’s Miller capacitance (CGD) can momentarily pull
the gate high, turning the MOSFET back on.
The LTC1693-1 and LTC1693-2 are dual drivers that are
electrically isolated. Each driver has independent opera-
tion from the other. Drivers may be used in different parts
ofasystem,suchasacircuitrequiringafloatingdriverand
the second driver being powered with respect to ground.
Input Stage
The LTC1693 employs 3V CMOS compatible input thresh-
oldsthatallowalowvoltagedigitalsignaltodrivestandard
power MOSFETs. The LTC1693 incorporates a 4V internal
regulatortobiastheinputbuffer. Thisallowsthe3VCMOS
compatible input thresholds (VIH = 2.6V, VIL = 1.4V) to be
independent of variations in VCC. The 1.2V hysteresis
between VIH and VIL eliminates false triggering due to
groundnoiseduringswitchingtransitions.TheLTC1693’s
input buffer has a high input impedance and draws less
than 10µA during standby.
Rise/Fall Time
Since the power MOSFET generally accounts for the ma-
jority of power lost in a converter, it’s important to quickly
turniteitherfully“on”or“off”therebyminimizingthetran-
sition time in its linear region. The LTC1693 has rise and
falltimesontheorderof16ns,deliveringabout1.4Ato1.7A
of peak current to a 1nF load with a VCC of only 12V.
Output Stage
The LTC1693’s rise and fall times are determined by the
peak current capabilities of P1 and N1. The predriver,
shown in Figure 1 driving P1 and N1, uses an adaptive
method to minimize cross-conduction currents. This is
done with a 6ns nonoverlapping transition time. N1 is fully
turned off before P1 is turned-on and vice-versa using this
6ns buffer time. This minimizes any cross-conduction
currents while N1 and P1 are switching on and off yet is
short enough to not prolong their rise and fall times.
The LTC1693’s output stage is essentially a CMOS in-
verter, as shown by the P- and N-channel MOSFETs in
Figure 1 (P1 and N1). The CMOS inverter swings rail-to-
rail, giving maximum voltage drive to the load. This large
voltage swing is important in driving external power
MOSFETs, whose RDS(ON) is inversely proportional to its
gate overdrive voltage (VGS – VT).
8
LTC1693
U
W U U
APPLICATIONS INFORMATION
Driver Electrical Isolation
driver is powered with respect to ground. Similarly Figure
3 shows a simplified circuit of a LTC1693-1 which is driv-
ing MOSFETs with different ground potentials. Because
there is 1GΩ of isolation between these drivers in a single
package, ground current on the secondary side will not
recirculate to the primary side of the circuit.
TheLTC1693-1andLTC1693-2incorporatetwoindividual
driversinasinglepackagethatcanbeseparatelyconnected
to GND and VCC connections. Figure 2 shows a circuit with
an LTC1693-2, its top driver left floating while the bottom
Power Dissipation
V
IN
LTC1693-2
V
CC1
To ensure proper operation and long term reliability, the
LTC1693mustnotoperatebeyonditsmaximumtempera-
ture rating. Package junction temperature can be calcu-
lated by:
IN1
OUT1
N1
GND1
TJ = TA + PD(θJA)
•
where:
V
CC2
TJ = Junction Temperature
+
V
TA = Ambient Temperature
PD = Power Dissipation
IN2
OUT2
N2
θJA = Junction-to-Ambient Thermal Resistance
GND2
Power dissipation consists of standby and switching
power losses:
1693 F02
Figure 2. Simplified LTC1693-2 Floating Driver Application
PD = PSTDBY + PAC
where:
OTHER
PRIMARY-SIDE
CIRCUITS
OTHER
SECONDARY-SIDE
CIRCUITS
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
•
•
TheLTC1693consumesverylittlecurrentduringstandby.
This DC power loss per driver at VCC = 12V is only
(360µA)(12V) = 4.32mW.
LTC1693-1
V
CC1
+
V
V
IN1
OUT1
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capactive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Load losses for the CMOS driver driving
a pure capacitive load COUT will be:
GND1
V
CC2
+
IN2
OUT2
Load Capacitive Power (COUT) = (COUT)(f)(VCC)2
GND2
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated by its gate charge factor, QG. The QG value
1693 F03
Figure 3. Simplified LTC1693-1 Application
with Different Ground Potentials
9
LTC1693
U
W U U
APPLICATIONS INFORMATION
V
CC
corresponding to MOSFET’s VGS value (VCC in this case)
can be readily obtained from the manafacturer’s QGS vs
VGS curves:
LTC1693
Load Capacitive Power (MOS) = (VCC)(QG)(f)
INPUT SIGNAL
GOING BEL0W
GND PIN
IN
R1
D1
Transition state power losses are due to both AC currents
required to charge and discharge the drivers’ internal
nodal capacitances and cross-conduction currents in the
internal gates.
POTENTIAL
PARASITIC
SUBSTRATE
DIODE
1693 F04
UVLO and Thermal Shutdown
GND
The LTC1693’s UVLO detector disables the input buffer
and pulls the output pin to ground if VCC < 4V. The output
remains off from VCC = 1V to VCC = 4V. This ensures that
during start-up or improper supply voltage values, the
LTC1693 will keep the output power MOSFET off.
Figure 4
Bypassing and Grounding
LTC1693requiresproperVCCbypassingandgroundingdue
to its high speed switching (ns) and large AC currents (A).
CarelesscomponentplacementandPCBtraceroutingmay
cause excessive ringing and under/overshoot.
The LTC1693 also has a thermal detector that similarly
disables the input buffer and grounds the output pin if
junction temperature exceeds 145°C. The thermal shut-
down circuit has 20°C of hysteresis. This thermal limit
helps to shut down the system should a fault condition
occur.
To obtain the optimum performance from the LTC1693:
A. Mountthebypasscapacitorsascloseaspossibletothe
VCC and GND pins. The leads should be shortened as
much as possible to reduce lead inductance. It is
recommended to have a 0.1µF ceramic in parallel with
a low ESR 4.7µF bypass capacitor.
Input Voltage Range
LTC1693’s input pin is a high impedance node and essen-
tially draws neligible input current. This simplifies the
input drive circuitry required for the input.
Forhighvoltageswitchinginaninductiveenvironment,
ensure that the bypass capacitors’ VMAX ratings are
high enough to prevent breakdown. This is especially
important for floating driver applications.
The LTC1693 typically has 1.2V of hysteresis between its
lowandhighinputthresholds. Thisincreasesthedriver’s
robustnessagainstanygroundbouncenoises. However,
care should still be taken to keep this pin from any noise
pickup, especially in high frequency switching
applications.
B. Use a low inductance, low impedance ground plane to
reduce any ground drop and stray capacitance. Re-
member that the LTC1693 switches 1.5A peak currents
and any significant ground drop will degrade signal
integrity.
In applications where the input signal swings below the
GND pin potential, the input pin voltage must be clamped
to prevent the LTC1693’s parastic substrate diode from
turning on. This can be accomplished by connecting a
seriescurrentlimitingresistorR1andashuntingSchottky
diode D1 to the input pin (Figure 4). R1 ranges from 100Ω
to 470Ω while D1 can be a BAT54 or 1N5818/9.
C. Planthegroundroutingcarefully.Knowwherethelarge
load switching current is coming from and going to.
Maintain separate ground return paths for the input pin
and output pin. Terminate these two ground traces only
at the GND pin of the driver (STAR network).
D. Keepthecoppertracebetweenthedriveroutputpinand
the load short and wide.
10
LTC1693
U
TYPICAL APPLICATIONS
11
LTC1693
TYPICAL APPLICATIONS
U
Negative-to-Positive Synchronous Boost Converter
D2
MBRO530
V
L2**
1µH
S
V
3.3V
6A
OUT
D1
+
+
C14
10µF
16V
C13
R19
1k
MBRS130
C3
C2
R5
0.1µF
+
+
6
330µF
6.3V
× 2
330µF
6.3V
×5
Q2
Si4420
×2
2.2Ω
5
3
C12
4700pF
R1
0.015Ω
1W
D4
MBRO530
C17
100pF
U2B
LTC1693-2
L1*
4.8µH
4
R2
0.015Ω
1W
D3
MBRO530
D5
MBRO530
C11
R16
3.6k
C1
4700pF
+
330µF
6.3V
×5
Q6
2N3904
8
2
Q1
Si4420
×2
R3
100Ω
R4
2.2Ω
7
1
C16
10µF
16V
R14
51Ω
R15
1.2k
U2A
LTC1693-2
C15
0.1µF
V
IN
–5V
C4
1000pF
9
–
8
R6
R17
–
SENSE SENSE
10Ω
6.81k
2
1
3.3V
PWR V
IN
TDRV
BDRV
LBI
3
4
5
6
16
13
11
14
R18
6.81k
R8
30.1k
R10
100k
R11
PINV
BINH
100k
+
C6
10µF
16V
U1
LTC1266
V
S
Q4
2N3906
Q5
2N3906
V
C
SHDN
LBO
IN
Q3
2N7002
T
I
SGND PGND
12 15
V
C5
0.1µF
C7
390pF
TH
FB
*PANASONIC ETQPAF4R8HA
**COILCRAFT DO3316P-102
7
10
C9
0.015µF
C8
1500pF
C10
220pF
R9
13k
R12
4.75k
R13
R7
1k
1.30k
1693 TA03
12
LTC1693
U
TYPICAL APPLICATIONS
•
•
•
•
•
•
13
LTC1693
U
TYPICAL APPLICATIONS
R T O P
C O M P
R M I D
G N D - S
G N D - F
V
+
E F F I C I E N C Y
C
V
S S
P G N D
S G N D
R E F
V
M U R S 1 2 0
S E N S E
S E N S E
A V G
I
–
+
S L / A D J
C T
T S
T G
R E F
5 V
S Y N C
B O O S T
V
14
LTC1693
U
TYPICAL APPLICATIONS
5V to 12V Boost Converter
R2
13k
1%
R1
D1
BAT85
7.5k
1%
V
CC
= 5V
+
C2
0.1µF
C3
4.7µF
L1*
22µH
D2
1N5819
V
OUT
8
12V
50mA
1
7
Q1
BS170
LTC1693-3
4
+
C
L
3
C1
680pF
47µF
1693 TA06a
INDUCTOR PEAK CURRENT ≈600mA
R2, C1 SET THE OSCILLATION FREQUENCY AT 200kHz
R1 SETS THE DUTY CYCLE AT 45%
EFFICIENCY ≈80% AT 50mA LOAD
*SUMIDA CDRH125-220
Efficiency
Output Voltage
18
16
14
12
10
8
100
90
V
= 5V
V
= 5V
CC
CC
50mA LOAD
50mA LOAD
80
70
60
50
6
35
45
50
55
60
65
40
10
12
13
14
15
16
11
DUTY CYCLE (%)
OUTPUT VOLTAGE (V)
1693 TA06b
1693 TA06c
15
LTC1693
TYPICAL APPLICATIONS
U
Charge Pump Doubler
R1
11k
1%
V
CC
= 5V
V
CC
= 5V
C2
1µF
D1
1N5817
C3
1µF
D2
1N5817
8
1
7
LTC1693-3
4
V
OUT
+
3
C1
680pF
C
L
47µF
1693 TA07a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
100
80
12
10
V
= 5V
V
= 5V
CC
CC
8
6
60
40
20
0
4
2
0
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07c
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA07b
16
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Inverter
R1
11k
1%
V
CC
= 5V
C2
1µF
C3
1µF
D2
1N5817
8
1
7
LTC1693-3
4
V
OUT
C
+
L
3
C1
680pF
47µF
D1
1N5817
1693 TA08a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
0
100
80
V
= 5V
V
= 5V
CC
CC
–1
–2
–3
60
40
20
0
–4
–5
–6
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
1693 TA08c
1693 TA08b
17
LTC1693
U
TYPICAL APPLICATIONS
Charge Pump Tripler
R1
11k
1%
V
= 5V
CC
V
CC
= 5V
C2
1µF
D1
1N5817
C3
1µF
D2
1N5817
D3
1N5817
D4
1N5817
8
1
7
LTC1693-3
4
V
OUT
+
+
3
C4
3.3µF
C
L
47µF
C5
1µF
C1
680pF
1693 TA09a
R1, C1 SET THE OSCILLATION FREQUENCY AT 150kHz
AND THE DUTY CYCLE AT 35%
Efficiency
Output Voltage
18
16
14
12
10
8
90
80
70
60
50
40
30
20
10
0
V
= 5V
V
= 5V
CC
CC
6
4
2
0
0
10 20 30 40 50
100
0
10 20 30 40 50 60 70 80 90 100
OUTPUT CURRENT (mA)
60 70 80 90
OUTPUT CURRENT (mA)
1693 TA09b
1693 TA09c
18
LTC1693
U
PACKAGE DESCRIPTION
Dimensions in inches (millimeters) unless otherwise noted.
MS8 Package
8-Lead Plastic MSOP
(LTC DWG # 05-08-1660)
0.118 ± 0.004*
(3.00 ± 0.102)
8
7
6
5
0.118 ± 0.004**
(3.00 ± 0.102)
0.192 ± 0.004
(4.88 ± 0.10)
1
2
3
4
0.040 ± 0.006
(1.02 ± 0.15)
0.034 ± 0.004
(0.86 ± 0.102)
0.007
(0.18)
0° – 6° TYP
SEATING
PLANE
0.012
(0.30)
REF
0.021 ± 0.006
(0.53 ± 0.015)
0.006 ± 0.004
(0.15 ± 0.102)
MSOP (MS8) 1197
0.0256
(0.65)
TYP
* DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
** DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.189 – 0.197*
(4.801 – 5.004)
7
5
8
6
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
1
0.053 – 0.069
3
4
2
0.010 – 0.020
(0.254 – 0.508)
× 45°
(1.346 – 1.752)
0.004 – 0.010
(0.101 – 0.254)
0.008 – 0.010
(0.203 – 0.254)
0°– 8° TYP
0.016 – 0.050
0.406 – 1.270
0.050
(1.270)
TYP
0.014 – 0.019
(0.355 – 0.483)
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
SO8 0996
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection ofits circuits as described herein willnotinfringe on existing patentrights.
19
LTC1693
U
TYPICAL APPLICATION
C7
2.2nF
100V
Isolated Push-Pull DC/DC Converter
R3
1
2
•
•
10Ω
T1A
24T
#32
V
CC
= 5V
•
•
+
1
2
9
8
9
8
C6
330µF
6.3V
T1B
24T
#32
T1E
24T
#28
D1
MBR340
L1
1µH
R1
6.2k
V
= 5V
CC
V
12V
1A
OUT
C3
0.1µF
C4
1µF
+
C9
V
= 5V
•
•
CC
3
4
T1C
24T
#32
T1F
24T
#28
8
LTC1693-2
2
270µF
25V
×3
D2
MBR340
C2
0.1µF
1
3
7
Q1
R2
Si4410
10Ω
10 14 13
3
4
14
T1D
24T
#32
C5
PRESET CLR
13
12
11
12
9
8
2.2nF
100V
×2
74HC14
7
Q
R4
10Ω
74HC74
C8
2.2nF
100V
C1
390pF
D
Q
6
LTC1693-2
4
GND
7
5
Q2
Si4410
T1: PHILIPS CPHS-EFD20-1S-10P
FIRST WIND T1A AND T1C BIFILAR,
THEN WIND T1E AND T1F BIFILAR,
THEN WIND T1B AND T1D BIFILAR
1693 F05a
Efficiency
Output Voltage
100
14
12
V
CC
= 5V
V
CC
= 5V
90
80
70
60
50
40
30
20
10
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
0.3
0.5 0.6 0.7 0.8 0.9 1.0
0.1 0.2
0.4
OUTPUT CURRENT (A)
OUTPUT CURRENT (A)
1693 F05c
1693 F05b
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
Internal Charge Pump, 4.5V to 48V Supply Range, t = 80µs, t = 28µs
LTC1154
High Side Micropower MOSFET Drivers
ON
OFF
LTC1155
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
4.5V to 18V Supply Range
4.5V to 18V Supply Range
3.3V or 5V Supply Range
LTC1156
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
LTC1157
LT®1160/LT1162
LT1161
3.3V Dual Micropower High/Low Side Driver
Half/Full Bridge N-Channel Power MOSFET Driver
Quad Protected High Side MOSFET Driver
Triple 1.8V to 6V High Side MOSFET Driver
High Power Synchronous DC/DC Controller
Dual Driver with Topside Floating Driver, 10V to 15V Supply Range
8V to 48V Supply Range, t = 200µs, t = 28µs
ON
OFF
LTC1163
LT1339
1.8V to 6V Supply Range, t = 95µs, t = 45µs
ON OFF
Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive
LTC1435
High Efficiency, Low Noise Current Mode
Step-Down DC/DC Controller
3.5V to 36V Operation with Ultrahigh Efficiency, Dual N-Channel MOSFET
Synchronous Drive
1693fa LT/TP 1000 2K REV A • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1999
20 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
(408)432-1900 FAX:(408)434-0507 www.linear-tech.com
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