LTC1982ES6#TR [Linear]
LTC1982 - Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C;
| 型号： | LTC1982ES6#TR |
| 厂家： | 
Linear |
| 描述： | LTC1982 - Single and Dual Micropower High Side Switch Controllers in SOT-23; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C 光电二极管 |
| 文件： | 总8页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC1981/LTC1982
Single and Dual Micropower
High Side Switch Controllers
in SOT-23
U
FEATURES
DESCRIPTIO
The LTC®1981/LTC1982 are low-power, self-contained
N-channel MOSFET drivers. An internal voltage tripler
allows gates to be driven without the use of any external
components. Internal regulation circuitry allows quies-
centcurrenttodropto10µAperdriver(20µAforLTC1981)
once the gates are charged.
■
No External Components Required
■
Internal Voltage Triplers Produce High Side
Gate Drive for Logic Level FETs
Ultralow Power:
■
10µA Per Driver ON Current (LTC1982)
20µA ON Current (LTC1981)
<1µA Shutdown Current
Low quiescent current and low shutdown current (under
1µA) make these parts ideal for battery and other power
constrained systems. The wide input voltage range ac-
commodates a variety of battery/input configurations.
■
VCC Range: 1.8V to 5V
■
Gate Drive Outputs Driven to Ground During
Shutdown
■
Gate Drive Outputs Internally Clamped to 7.5V Max
■
■
■
■
Gate drive is internally clamped to 7.5V providing protec-
tion to the external MOSFET gate. The MOSFETs can be
driven in either high side or low side mode.
“Gate Drive Ready” Output (LTC1981)
Ultrasmall Application Circuit
5-Pin SOT-23 Package (LTC1981)
6-Pin SOT-23 PaUckage (LTC1982)
The LTC1981 single driver version also includes a gate
drive ready pin and twice the drive current capacity of the
dual driver LTC1982.
APPLICATIO S
■
Cellular Telephones
Portable POS Terminal
Handheld Battery Powered Equipment
The LTC1981 is available in a 5-pin SOT-23. The LTC1982
is available in a 6-pin SOT-23.
■
■
, LTC and LT are registered trademarks of Linear Technology Corporation.
U
TYPICAL APPLICATIONS
Single High Side Switch Controller
Dual High Side Switch Controller
V
V
CC
1.8V TO 5.0V
CC
1.8V TO 5.0V
Q1
Si3442DV
Q1
+
+
1/2 Si6925DQ
10µF
10µF
Q2
1/2 Si6925DQ
5
4
6
5
4
V
GATE
V
GATE 1 GATE 2
LTC1982
CC
CC
LTC1981
GND
2
100k
LOAD
LOAD 1
LOAD 2
GDR
1
SHDN
3
SHDN 1 GND SHDN 2
GATE
DRIVE
READY
1
2
3
SHDN 1
SHDN 2
SHDN
1981/82 TA01
1981/82 TA02
1
LTC1981/LTC1982
W W
U W
ABSOLUTE AXI U RATI GS
(Notes 1, 2)
Terminal Voltage
Operating Temperature Range
LTC1981: VCC, GATE, SHDN, GDR ........ –0.3V to 7.5V
LTC1982: VCC, GATE 1, GATE 2,
LTC1981E/LTC1982E (Note 3) ............ –40°C to 85°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
SHDN 1, SHDN 2 ................... –0.3V to 7.5V
U
W
U
PACKAGE/ORDER I FOR ATIO
ORDER PART
NUMBER
ORDER PART
NUMBER
TOP VIEW
TOP VIEW
GDR 1
GND 2
5 V
CC
SHDN 1 1
GND 2
6 V
CC
LTC1981ES5
LTC1982ES6
5 GATE 1
4 GATE 2
4 GATE
SHDN 3
SHDN 2 3
S5 PART
MARKING
S6 PART
MARKING
S5 PACKAGE
S6 PACKAGE
5-LEAD PLASTIC SOT-23
6-LEAD PLASTIC SOT-23
TJMAX = 150°C, θJA = 250°C/W
TJMAX = 150°C, θJA = 230°C/W
LTSF
LTPF
Consult factory for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 5V unless otherwise specified. CGATE 1 = CGATE 2 = CGATE = 1000pF.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
Operating Supply Voltage
Supply Current
●
1.8
5.5
V
CC
I
GATE 1 and GATE 2 Outputs High
GATE 1 or GATE 2 Outputs High
GATE Output High (LTC1981)
●
●
●
17
10
17
30
20
30
µA
µA
µA
CC
I
SHDN Supply Current
SHDN 1 and SHDN 2 Inputs Low
SHDN Input Low (LTC1981)
●
●
1
1
µA
µA
SHDN
V
GATE Drive Output Voltage
V
V
V
V
= 1.8V
= 2.7V
= 3.3V
= 5V
●
●
●
●
4.27
6.40
6.90
6.90
4.50
6.75
7.25
7.25
4.75
7.10
7.50
7.50
V
V
V
V
GATE
CC
CC
CC
CC
f
t
Charge Pump Oscillator Frequency Measured with 10k Resistor from Output to GND
600
kHz
OSC
ON
Turn-on Time into 1000pF
From SHDN 1, SHDN 2 Going High to
GATE 1, GATE 2 = V + 1V
110
85
µs
µs
CC
From SHDN Going High to GATE = V +1V (LTC1981)
CC
t
Turn-off Time into 1000pF
From SHDN 1, SHDN 2 Going Low to
OFF
GATE 1, GATE 2 GATE = 100mV
12
µs
V
,
V
V
C
SHDN Input Low Voltage
SHDN Input High Voltage
SHDN Input Capacitance
SHDN Input Leakage Current
V
V
= 1.8V to 5.5V
= 1.8V to 5.5V
●
●
0.4
IL
IH
IN
CC
CC
1.6
V
(Note 4)
5
pF
µA
I
±1
IN
2
LTC1981/LTC1982
ELECTRICAL CHARACTERISTICS
(LTC1981 only)
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 5V unless otherwise specified. CGATE 1 = CGATE 2 = CGATE = 1000pF.
SYMBOL PARAMETER
CONDITIONS
= 100µA, V = 1.8V
MIN
TYP
MAX
UNITS
V
OL
GDR Output Voltage Low
I
●
0.05
0.4
V
SINK
CC
GATE Drive Ready Trip Point
GATE Voltage Rising
V
CC
V
CC
V
CC
V
CC
= 1.8V
= 2.7V
= 3.3V
= 5V
●
●
●
●
3.85
5.78
6.17
6.17
4.05
6.08
6.5
4.25
6.38
6.82
6.82
V
V
V
V
6.5
GDR Hysteresis
GDR Delay
GATE Voltage Falling
2
2
%
After GATE is Above the GDR Trip Threshold
µs
10k Pull-Up to V
CC
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: All voltage values are with respect to GND.
Note 3: the LTC1982E is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
Note 4: Guaranteed by design not subject to test.
U W
TYPICAL PERFOR A CE CHARACTERISTICS
GATE Drive Voltage vs Supply
GATE Drive Current (LTC1982)
Supply Current vs Supply Voltage
Voltage
100
10
1
25
20
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
= 3.3V
= 2.7V
CC
T
A
= 25°C
T
= 25°C
A
V
CC
= 5V
V
CC
GATE DRIVE VOLTAGE
V
= 1.8V
(V COMMON SOURCE)
CC
GS
LTC1981 OR
BOTH CHANNELS ON
LTC1982
15
10
5
EITHER CHANNEL ON
LTC1982
GATE DRIVE –V
GS
CC
(V SOURCE FOLLOWER)
T
A
= 25°C
0.1
0
0
1
2
3
4
5
6
7
8
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
3.0 3.5
1.5 2.0 2.5
4.0 4.5 5.0 5.5
GATE DRIVE VOLTAGE (V)
SUPPLY VOLTAGE, V (V)
CC
1982 G03
1982 G02
1982 G01
ISUPPLY
ISUPPLY
300
60
T
= 25°C
T
A
= 25°C
A
V
= 5V
V
CC
= 3V
CC
250
200
150
100
50
50
40
30
20
10
0
SHDN1 TIED
TO SHDN2
SHDN1 TIED
TO SHDN2
0
0
1
2
0
1
2
SHDN LOGIC INPUT VOLTAGE (V)
SHDN LOGIC INPUT VOLTAGE (V)
1981/82 G04
1981/82 G05
3
LTC1981/LTC1982
U W
TYPICAL PERFOR A CE CHARACTERISTICS
GATE Drive Voltage vs
Temperature
Turn-On Time (LTC1982)
Turn-Off Time (LTC1982)
7.50
7.45
7.40
7.35
7.30
7.25
7.20
7.15
7.10
7.05
7.00
400
350
300
250
200
150
100
50
40
35
30
25
20
15
10
5
V
= 3.3V
C
T
= 1000pF
CC
C
A
= 1000pF
GATE
A
GATE
= 25°C
T
= 25°C
TIME FOR V
< 0.1V
GATE
V
GS
= 2V
V
GS
= 1V
0
0
–60
20
TEMPERATURE (°C)
60
80
1.5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
SUPPLY VOLTAGE (V)
1982 G06
1.5
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
SUPPLY VOLTAGE (V)
1982 G07
–40 –20
0
40
100
2.0
2.0
1982 G08
GATE Drive Current (LTC1981)
Turn-On Time (LTC1981)
Turn-Off Time (LTC1981)
100
10
1
300
250
200
150
100
50
25
20
C =1000pF
V
CC
= 2.7V
C
A
= 1000pF
GATE
GATE
T = 25°C
A
T
= 25°C
TIME FOR V
< 0.1
GATE
V
CC
V
= 5V
V
CC
= 1.8V
= 3.3V
CC
V
GS
= 2V
15
10
5
V
= 1V
GS
0.1
0
0
0
1
2
3
4
5
6
7
8
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
SUPPLY VOLTAGE (V)
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
SUPPLY VOLTAGE (V)
GATE DRIVE VOLTAGE (V)
1981/82 G09
1981/82 G10
1981/82 G11
U
U
U
PIN FUNCTIONS
LTC1981:
VCC (Pin 5): Input Supply Voltage. Range from 1.8V to
GDR (Pin 1): Gate Drive Ready Active High Open Drain
Output. Used to indicate when the gate drive output is
greater than 90% of its final value.
5.5V.
LTC1982:
GND (Pin 2): Ground.
SHDN 1 (Pin 1): SHDN 1 Active Low Input. Used to shut
down the GATE 1 charge pump and force the GATE 1
output pin to ground.
SHDN (Pin 3): SHDN Active Low Input. Used to shut down
the part and force the GATE output pin to ground.
GND (Pin 2): Ground.
GATE (Pin 4): Gate Drive Output to an External High Side
Switch. Fully enhanced by internal charge pump. Con-
trolled by the SHDN input pin. Output voltage on this pin
will be approximately 2.5 times VCC or 7.25V, whichever is
less.
SHDN 2 (Pin 3): SHDN 2 Active Low Input. Used to shut
down the GATE 2 charge pump and force the GATE 2
output pin to ground.
4
LTC1981/LTC1982
U
U
U
PIN FUNCTIONS
GATE 2(Pin 4): Gate Drive Output to an External High Side
Switch. Fully enhanced by internal charge pump. Con-
trolled by the SHDN 2 input pin. Output voltage on this pin
will be approximately 2.5 times VCC or 7.25V, whichever is
less.
GATE 1 (Pin 5): Gate Drive Output to an External High Side
Switch. Fully enhanced by internal charge pump. Con-
trolled by the SHDN 1 input pin. Output voltage on this pin
will be approximately 2.5 times VCC or 7.25V, whichever is
less.
VCC(Pin 6):InputSupplyVoltage.Rangefrom1.8Vto 5.5V.
W
BLOCK DIAGRA SM
LTC1981 Single High Side Switch Driver
15k
REGULATING
CHARGE PUMP
LTC1982 Dual High Side Switch Driver
GATE
SHDN
EN
REGULATING
CHARGE
PUMP 1
30k
GATE 1
SHDN 1
EN
GDR
+
–
V
CC
REGULATING
CHARGE
PUMP 2
30k
+
–
GATE 2
SHDN 2
EN
REF
1981/82 BD02
1981/82 BD01
U
OPERATIO
Charge Pump
the related gate drive output pin high. A logic low input on
one of the shutdown input pins disables the correspond-
ing charge pump and drives the related gate drive output
pin low. If shutdown input on the LTC1981 is low or both
of the shutdown input pins on the LTC1982 are low, the
part will be placed into a low current shutdown mode
(<1µA).
To fully enhance the external N-channel switches, internal
charge pumps are used to boost the output gate drive to
approximately 2.5 times the supply voltage, or 7.25V,
whichever is less. A feedback network is used to regulate
the output gate drive. This keeps the supply current low in
addition to providing a maximum output voltage limit. The
reason for the maximum output voltage limit is to avoid
switch gate source breakdown due to excessive gate
overdrive.
Gate Drive Ready (LTC1981 Only)
Thegatedrivereadypin(GDR)isusedtoindicatewhenthe
gate drive output (GATE) is greater than 90% of its final
value. This can be useful in applications that require
knowledge of the state of the gate drive for initialization
purposes or as fault detection should something be load-
ing the gate drive down.
The gate drive outputs (GATE 1, GATE 2, or GATE) are
controlled by the shutdown input pins (SHDN 1, SHDN 2
or SHDN). A logic high input on one of the shutdown input
pins enables the corresponding charge pump and drives
5
LTC1981/LTC1982
U
W U U
APPLICATIONS INFORMATION
Logic-Level MOSFET Switches
managed by the system regulator. R1 is required to
eliminate the possibility of parasitic MOSFET oscillations
duringswitchtransitions.Itisagoodpracticetoisolatethe
gates of paralleled MOSFETs with 1k resistors to decrease
the possibility of interaction between switches.
TheLTC1981/LTC1982aredesignedtooperatewithlogic-
levelN-channelMOSFETswitches.Althoughthereissome
variation among manufacturers, logic-level MOSFET
switchesaretypicallyratedwithVGS =4Vwithamaximum
continuous VGS rating of ±8V. RDS (ON) and maximum
3.3V
V
LT1129-3.3
IN
+
V
DS ratings are similar to standard MOSFETs and there is
3.3µF
generally little price differential. When operating at supply
voltages of 5V or greater, care must be taken when
selecting the MOSFET. The LTC1981/LTC1982 limit the
output voltage to between 6.9V and 7.5V. The VGS devel-
opedfortheMOSFETmaybetoolowtosufficientlyturnon
theMOSFET. MOSFETsratedat2.5V, orless, willbebetter
suited for applications where the supply voltages ap-
proach 5V.
R1
1k
V
CC
Si3442DV
GATE 1
1/2 LTC1982
SHDN 1
C1
0.1µF
+
3.3V
LOAD
C
L
ON/OFF
GND
100µF
1981/82 F01
Figure 1. Powering a Large Capactive Load
Mixed 5V/3V Systems
Powering Large Capacitive Loads
Because the input ESD protection diodes are referenced to
the GND pin instead of the supply pin, it is possible to drive
the LTC1981/LTC1982 inputs from 5V CMOS or TTL logic
even though the LTC1981/LTC1982 is powered from a
3.3V supply as shown in Figure 2. Likewise, because the
inputthresholdvoltagehighisnevergreaterthan1.6V, the
reverse situation is true. The LTC1981/LTC1982 can be
driven with 3V CMOS or TTL even when the supply to the
device is as high as 5V as shown in Figure 3.
Electrical subsystems in portable battery-powered equip-
ment are typically bypassed with large filter capacitors to
reduce supply transients and supply induced glitching. If
not properly powered however, these capacitors may
themselves become the source of supply glitching. For
example, if a 100µF capacitor is powered through a switch
with a slew rate of 0.1V/µs, the current during start-up is:
ISTART = C(∆V/∆t)
= (100 •10–6)(1 • 105)
= 10A
3.3V
V
CC
1/2 LTC1982
SHDN 1
Si3442DV
GATE 1
Obviously, this is too much current for the regulator (or
output capacitor) to supply and the output will glitch by as
much as a few volts.
5V
3.3V
LOAD
GND
1981/82 F02
The start up current can be substantially reduced by
limiting the slew rate at the gate of an N-channel as shown
inFigure1.ThegatedriveoutputoftheLTC1981/LTC1982
have an internal 30k resistor (15k LTC1981) in series with
each of the output gate drive pins (see Functional Block
Diagram). Therefore, it only needs an external 0.1µF
capacitor (0.22µF for the LTC1981) to create enough RC
delay to substantially slow the slew rate of the MOSFET
gate to approximately 0.6V/ms. Since the MOSFET is
operating as a source follower, the slew rate at the source
is essentially the same as that at the gate, reducing the
startup current to approximately 60mA which is easily
Figure 2. Direct Interface to 5V Logic
5V
V
Si3442DV
CC
1/2 LTC1982
SHDN 1
GATE 1
3.3V
5V
LOAD
GND
1981/82 F03
Figure 3. Direct Interface to 3.3V Logic
6
LTC1981/LTC1982
U
W U U
APPLICATIONS INFORMATION
V
BAT
Reverse Battery Protection
(1.8V TO 5V)
10k
The LTC1981/LTC1982 can be protected against reverse
battery conditions by connecting a 150Ω resistor in series
with the supply pin as shown in Figure 4. The resistor
limits the supply current to less than 24mA with –3.6V
applied. Because the LTC1981/LTC1982 draw very little
current while in normal operation, the drop across the
resistor is minimal. Control logic can be protected by
adding 10k resistors in series with the input pins.
0.1µF
GATE
DRIVE
READY
150Ω
1
2
3
5
4
GDR
V
CC
LTC1981
GATE
GND
Si3442DV
SHDN
3V
10k
LOAD
1981/82 F04
Figure 4. Reverse Battery Protection
U
PACKAGE DESCRIPTIO
Dimensions in inches (millimeters) unless otherwise noted.
S5 Package
5-Lead Plastic SOT-23
(LTC DWG # 05-08-1633)
2.60 – 3.00
(0.102 – 0.118)
2.80 – 3.00
(0.110 – 0.118)
(NOTE 3)
1.50 – 1.75
(0.059 – 0.069)
0.00 – 0.15
(0.00 – 0.006)
0.90 – 1.45
(0.035 – 0.057)
0.35 – 0.55
(0.014 – 0.022)
0.95
(0.037)
REF
0.35 – 0.50
(0.014 – 0.020)
FIVE PLACES (NOTE 2)
0.90 – 1.30
(0.035 – 0.051)
0.09 – 0.20
(0.004 – 0.008)
(NOTE 2)
1.90
(0.074)
REF
S5 SOT-23 0599
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DIMENSIONS ARE INCLUSIVE OF PLATING
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
4. MOLD FLASH SHALL NOT EXCEED 0.254mm
5. PACKAGE EIAJ REFERENCE IS SC-74A (EIAJ)
S6 Package
6-Lead Plastic SOT-23
(LTC DWG # 05-08-1634)
2.6 – 3.0
(0.110 – 0.118)
2.80 – 3.00
(0.110 – 0.118)
(NOTE 3)
1.50 – 1.75
(0.059 – 0.069)
0.00 – 0.15
(0.00 – 0.006)
0.90 – 1.45
(0.035 – 0.057)
0.35 – 0.55
(0.014 – 0.022)
0.35 – 0.50
(0.014 – 0.020)
SIX PLACES (NOTE 2)
0.90 – 1.30
(0.035 – 0.051)
0.95
(0.037)
REF
0.09 – 0.20
(0.004 – 0.008)
(NOTE 2)
1.90
(0.074)
REF
NOTE:
S6 SOT-23 0898
1. DIMENSIONS ARE IN MILLIMETERS
2. DIMENSIONS ARE INCLUSIVE OF PLATING
3. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
4. MOLD FLASH SHALL NOT EXCEED 0.254mm
5. PACKAGE EIAJ REFERENCE IS SC-74A (EIAJ)
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
7
LTC1981/LTC1982
U
TYPICAL APPLICATIO
Driving Both High Side and Low Side Switches
V
V
EXT
(30V MAX)
CC
1.8 to 5.0V
10µF
LOW SIDE
LOAD
1
2
3
6
5
4
V
SHDN 1
SHDN 2
SHDN 1
GND
CC
LTC1982
1k
Q1
Si6954DQ
GATE 1
0.1µF
SHDN 2
GATE 2
1k
Q2
Si6954DQ
0.1µF
HIGH SIDE
LOAD
1981/82 • TA03
RELATED PARTS
PART NUMBER
LTC1153/LTC1154
LTC1155/LTC1255
LTC1163/LTC1165
LTC1623
DESCRIPTION
COMMENTS
Single High Side Micropower MOSFET Drivers
Dual High Side Micropower MOSFET Drivers
Triple 1.8V to 6V High Side MOSFET Driver
SMBus Dual High Side Switch Controller
SMBus Dual Monolithic High Side Switch
Circuit Breaker with Auto Reset
Latchoff Current Limit
Three MOSFET Drivers in 8-Lead SO Package
Uses External Switches, Two Three-State Address Pins
Uses Internal Switches, One Three-State Address Pin
LTC1710
sn19812 19812fs LT/LCG 1200 4K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
8
●
●
(408)432-1900 FAX:(408)434-0507 www.linear-tech.com
LINEAR TECHNOLOGY CORPORATION 2000
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SI9137DB
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