LTC3400 [Linear]
600mA, 1.2MHz Micropower Synchronous Boost Converter in ThinSOT; 600毫安， 1.2MHz的微功率同步升压转换器采用ThinSOT
| 型号： | LTC3400 |
| 厂家： | 
Linear |
| 描述： | 600mA, 1.2MHz Micropower Synchronous Boost Converter in ThinSOT |
| 文件： | 总12页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC3400/LTC3400B
600mA, 1.2MHz Micropower
Synchronous Boost Converter
in ThinSOT
U
FEATURES
DESCRIPTIO
■
Up to 92% Efficiency
The LTC®3400/LTC3400B are synchronous, fixed fre-
quency, step-up DC/DC converters delivering high effi-
ciency in a 6-lead ThinSOT package. Capable of supplying
3.3V at 100mA from a single AA cell input, the devices
contain an internal NMOS switch and PMOS synchronous
rectifier.
■
Generates 3.3V at 100mA from a Single AA Cell
■
Low Start-Up Voltage: 0.85V
■
1.2MHz Fixed Frequency Switching
■
Internal Synchronous Rectifier
■
2.5V to 5V Output Range
Automatic Burst Mode® Operation (LTC3400)
■
A switching frequency of 1.2MHz minimizes solution
footprint by allowing the use of tiny, low profile inductors
and ceramic capacitors. The current mode PWM design is
internally compensated, reducing external parts count.
The LTC3400 features automatic shifting to power saving
Burst Mode operation at light loads, while the LTC3400B
features continuous switching at light loads. Antiringing
control circuitry reduces EMI concerns by damping the
inductor in discontinuous mode, and the devices feature
low shutdown current of under 1µA.
■
Continuous Switching at Light Loads (LTC3400B)
■
Logic Controlled Shutdown (<1µA)
■
Antiringing Control Minimizes EMI
■
Tiny External Components
Low Profile (1mm) ThinSOTTM Package
■
U
APPLICATIO S
■
Pagers
■
MP3 Players
■
Digital Cameras
LCD Bias Supplies
Bothdevicesareavailableinthelowprofile(1mm)ThinSOT
package.
, LTC, LT and Burst Mode are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
■
■
Handheld Instruments
■
Wireless Handsets
■
GPS Receivers
U
TYPICAL APPLICATIO
Efficiency
L1
4.7µH
100
V
= 2.4V
IN
1
+
90
80
SINGLE
AA CELL
C1
SW
4.7µF
V
OUT
6
4
5
3
3.3V
V
IN
V
OUT
V
= 1.5V
IN
R1
1.02M
1%
100mA
LTC3400
SHDN FB
GND
C2
70
60
OFF
ON
4.7µF
R2
604k
1%
2
FIGURE 1 CIRCUIT
WITH OPTIONAL SCHOTTKY DIODE
(SEE APPLICATIONS INFORMATION)
3400 F01
50
40
C1, C2: TAIYO-YUDEN X5R EMK316BJ475ML
L1: COILCRAFT DO160C-472
0.1
1
10
100
1000
LOAD CURRENT (mA)
Figure 1. Single Cell to 3.3V Synchronous Boost Converter
3400 F01a
3400f
1
LTC3400/LTC3400B
W W U W
U W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
ORDER PART
VIN Voltage ................................................. –0.3V to 6V
SW Voltage ................................................. –0.3V to 6V
SHDN, FB Voltage ....................................... –0.3V to 6V
VOUT ........................................................... –0.3V to 6V
Operating Temperature Range (Note 2) .. –30°C to 85°C
Storage Temperature Range ................... –65°C to 125°
Lead Temperature (Soldering, 10 sec).................. 300°C
TOP VIEW
NUMBER
SW 1
GND 2
FB 3
6 V
5 V
IN
LTC3400ES6
LTC3400BES6
OUT
4 SHDN
S6 PART MARKING
S6 PACKAGE
6-LEAD PLASTIC SOT-23
LTWK
LTUN
TJMAX = 125°C, θJA = 256°C/W
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 1.2V, VOUT = 3.3V, unless otherwise specified.
PARAMETER
CONDITIONS
I = 1mA
LOAD
MIN
TYP
0.85
0.5
MAX
1
UNITS
V
Minimum Start-Up Voltage
Minimum Operating Voltage
Output Voltage Adjust Range
Feedback Voltage
SHDN = V (Note 4)
0.65
5
V
IN
2.5
V
●
1.192
1.23
1
1.268
V
Feedback Input Current
V
V
V
= 1.25V (Note 3)
nA
µA
µA
µA
µA
µA
FB
Quiescent Current (Burst Mode Operation)
Quiescent Current (Shutdown)
Quiescent Current (Active)
NMOS Switch Leakage
= 1.4V (Note 5), LTC3400 Only
19
30
1
FB
= 0V, Not Including Switch Leakage
0.01
300
0.1
0.1
SHDN
Measured On V
500
5
OUT
V
SW
V
SW
= 5V
= 0V
PMOS Switch Leakage
5
NMOS Switch On Resistance
V
OUT
V
OUT
= 3.3V
= 5V
0.35
0.20
Ω
Ω
PMOS Switch On Resistance
V
OUT
V
OUT
= 3.3V
= 5V
0.45
0.30
Ω
Ω
NMOS Current Limit
600
80
850
3
mA
mA
ns
Burst Mode Operation Current Threshold
Current Limit Delay to Output
Max Duty Cycle
LTC3400 Only (Note 3)
(Note 3)
40
87
V
FB
= 1.15V
●
●
%
Switching Frequency
0.95
0.85
1.2
1.2
1.5
1.5
MHz
MHz
SHDN Input High
SHDN Input Low
SHDN Input Current
1
V
V
0.35
1
V
SHDN
= 5.5V
0.01
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 3: Specification is guaranteed by design and not 100% tested in
production.
Note 2: The LTC3400E/LTC3400BE are guaranteed to meet performance
specifications from 0°C to 70°C. Specifications over the –30°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 4: Minimum V operation after start-up is only limited by the
battery’s ability to provide the necessary power as it enters a deeply
discharged state.
IN
Note 5: Burst Mode operation I is measured at V . Multiply this value
Q
OUT
by V /V to get the equivalent input (battery) current.
OUT IN
3400f
2
LTC3400/LTC3400B
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Output Load Burst Mode Threshold
Minimum Start-Up Voltage
vs VIN
vs Load Current
VOUT vs Temperature
3.36
3.34
3.32
3.30
3.28
3.26
3.24
1.4
FIGURE 1 CIRCUIT
L = 4.7µH
T
= 25°C
A
I
= 10mA
T
= 25°C
O
A
1.3
1.2
1.1
1.0
0.9
0.8
20
10
0
V
OUT
= 3.3V
V
OUT
= 5V
–60
0
30
60
90
120
0.1
1
10
100
–30
0.9
1.5
2.1
2.7
(V)
3.3
3.9
4.5
I
(mA) CURRENT SOURCE LOAD
TEMPERATURE (°C)
V
OUT
IN
3400 G02
3400 G03
3400 G01
Normalized Oscillator Frequency
vs Temperature
No Load Battery Current vs VBATT
SW Pin Antiringing Operation
1000
100
10
1.01
1.00
0.99
0.98
V
A
= 3.3V
OUT
T
= 25°C
VSW
1V/DIV
0.97
0.96
0.95
0V
VIN = 1.3V
100ns/DIV
3400 G06
VOUT = 3.3V
IOUT = 10mA
L = 6.8µH
0.9 1.2 1.5
3.0
–50
–30 –10
10
30
50
70
90
1.8 2.1 2.4
2.7
COUT = 4.7µF
BATTERY VOLTAGE (V)
TEMPERATURE (°C)
3400 G04
3400 G05
SW Pin Fixed Frequency,
Continuous Inductor Current
Operation
Fixed Frequency and Burst Mode
Operation
VOUT Transient Response
VSW
1V/DIV
VOUT(AC)
100mV/DIV
VOUT(AC)
100mV/DIV
60mA
IOUT
100mA
IOUT
0V
10µA
40mA
VIN = 1.3V
100ns/DIV
3400 G07
V
IN = 1.3V
10ms/DIV
3400 G08
V
IN = 1.3V
100µs/DIV
3400 G09
VOUT = 3.3V
IOUT = 50mA
L = 6.8µH
VOUT = 3.3V
VOUT = 3.3V
IOUT = 60mA TO 10µA
L = 6.8µH
COUT = 4.7µF
IOUT = 40mA TO 100mA
L = 6.8µH
COUT = 4.7µF
COUT = 4.7µF
3400f
3
LTC3400/LTC3400B
U
U
U
PI FU CTIO S
SW (Pin 1): Switch Pin. Connect inductor between SW
and VIN. Optional Schottky diode is connected between
SW and VOUT. Keep these PCB trace lengths as short and
wide as possible to reduce EMI and voltage overshoot. If
the inductor current falls to zero, or SHDN is low, an
internal 100Ω antiringing switch is connected from SW to
VIN to minimize EMI.
SHDN = Low: Shutdown, quiescent current <1µA.
100Ω connected between SW and VIN.
Typically, SHDN should be connected to VIN through a 1M
pull-up resistor.
V
OUT (Pin 5): Output Voltage Sense Input and Drain of the
Internal Synchronous Rectifier MOSFET. Bias is derived
from VOUT. PCB trace length from VOUT to the output filter
capacitor(s)shouldbeasshortandwideaspossible.VOUT
is held at VIN – 0.6V in shutdown due to the body diode of
the internal PMOS.
GND (Pin 2): Signal and Power Ground. Provide a short
directPCBpathbetweenGNDandthe(–)sideoftheoutput
capacitor(s).
FB (Pin 3): Feedback Input to the gm Error Amplifier.
Connect resistor divider tap to this pin. The output voltage
can be adjusted from 2.5V to 5V by:
VIN (Pin 6): Battery Input Voltage. The device gets its
start-up bias from VIN. Once VOUT exceeds VIN, bias
comes from VOUT. Thus, once started, operation is com-
pletelyindependentfromVIN.Operationisonlylimitedby
the output power level and the battery’s internal series
resistance.
VOUT = 1.23V • [1 + (R1/R2)]
SHDN (Pin 4): Logic Controlled Shutdown Input.
SHDN = High: Normal free running operation, 1.2MHz
typical operating frequency.
W
BLOCK DIAGRA
L1
4.7µH
SINGLE
+
C
IN
1µF
V
IN
SW
1
6
CELL
OPTIONAL
SCHOTTKY
+
–
INPUT
V
OUT
GOOD
2.3V
START-UP
OSC
A/B
MUX
A
B
3.3V
OUTPUT
V
OUT
0.45Ω
5
SYNC
DRIVE
CONTROL
PWM
CONTROL
0.35Ω
R1
1.02M
RAMP
GEN
1.2MHz
CURRENT
SENSE
1%
Σ
SLOPE
COMP
(EXTERNAL)
PWM
COMPARATOR
+
–
–
FB
3
–
+
C
OUT
4.7µF
g
m
ERROR
AMP
1.23V
REF
R
C
80k
C
P2
2.5pF
R2
Burst Mode
OPERATION
CONTROL
604k
C
C
SLEEP
1%
(EXTERNAL)
150pF
SHDN
4
2
GND
SHUTDOWN
CONTROL
SHUTDOWN
3400 BD
3400f
4
LTC3400/LTC3400B
U
OPERATIO
The LTC3400/LTC3400B are 1.2MHz, synchronous boost
converters housed in a 6-lead ThinSOT package. Able to
operate from an input voltage below 1V, the devices
feature fixed frequency, current mode PWM control for
exceptional line and load regulation. With its low RDS(ON)
and gate charge internal MOSFET switches, the devices
maintain high efficiency over a wide range of load current.
Detaileddescriptionsofthethreedistinctoperatingmodes
follow. Operation can be best understood by referring to
the Block Diagram.
independentofinputoroutputvoltage. Thecurrentsignal
is blanked for 40ns to enhance noise rejection.
Zero Current Comparator: The zero current comparator
monitors the inductor current to the output and shuts off
the synchronous rectifier once this current reduces to ap-
proximately20mA.Thispreventstheinductorcurrentfrom
reversing in polarity improving efficiency at light loads.
Antiringing Control: The antiringing control circuitry pre-
vents high frequency ringing of the SW pin as the inductor
current goes to zero by damping the resonant circuit
formed by L and CSW (capacitance on SW pin).
Low Voltage Start-Up
The LTC3400/LTC3400B will start up at a typical VIN volt-
age of 0.85V or higher. The low voltage start-up circuitry
controls the internal NMOS switch up to a maximum peak
inductor current of 850mA (typ), with an approximate
1.5µs off-time during start-up, allowing the devices to
start up into an output load. Once VOUT exceeds 2.3V, the
start-up circuitry is disabled and normal fixed frequency
PWM operation is initiated. In this mode, the LTC3400/
LTC3400B operate independent of VIN, allowing extended
operating time as the battery can droop to several tenths
of a volt without affecting output voltage regulation. The
limitingfactorfortheapplicationbecomestheabilityofthe
battery to supply sufficient energy to the output.
Burst Mode Operation
Portable devices frequently spend extended time in low
power or standby mode, only switching to high power
drain when specific functions are enabled. In order to
improvebatterylifeinthesetypesofproducts,highpower
converter efficiency needs to be maintained over a wide
output power range. In addition to its high efficiency at
moderate and heavy loads, the LTC3400 includes auto-
matic Burst Mode operation that improves efficiency of
the power converter at light loads. Burst mode operation
is initiated if the output load current falls below an
internally programmed threshold (see Typical Perfor-
mancegraph, OutputLoadBurstModeThresholdvsVIN).
Once initiated, the Burst Mode operation circuitry shuts
down most of the device, only keeping alive the circuitry
required to monitor the output voltage. This is referred to
as the sleep state. In sleep, the LTC3400 draws only 19µA
from the output capacitor, greatly enhancing efficiency.
When the output voltage has drooped approximately 1%
from nominal, the LTC3400 wakes up and commences
normal PWM operation. The output capacitor recharges
and causes the LTC3400 to reenter sleep if the output load
remains less than the sleep threshold. The frequency of
thisintermittentPWMorburstoperationisproportionalto
load current; that is, as the load current drops further
below the burst threshold, the LTC3400 turns on less
frequently. When the load current increases above the
burst threshold, the LTC3400 will resume continuous
PWM operation seamlessly. The LTC3400B does not use
BurstModeoperationand featurescontinousoperationat
lightloads,eliminatinglowfrequencyoutputvoltageripple
Low Noise Fixed Frequency Operation
Oscillator: The frequency of operation is internally set to
1.2MHz.
ErrorAmp:Theerroramplifierisaninternallycompensated
transconductancetype(currentoutput)withatransconduc-
tance(gm)=33microsiemens.Theinternal1.23Vreference
voltageiscomparedtothevoltageattheFBpintogenerate
an error signal at the output of the error amplifier. A volt-
age divider from VOUT to ground programs the output
voltage via FB from 2.5V to 5V using the equation:
VOUT = 1.23V • [1 + (R1/R2)]
Current Sensing: A signal representing NMOS switch
current is summed with the slope compensator. The
summed signal is compared to the error amplifier output
to provide a peak current control command for the PWM.
Peak switch current is limited to approximately 850mA
at the expense of light load efficiency.
3400f
5
LTC3400/LTC3400B
W U U
U
APPLICATIO S I FOR ATIO
PCB LAYOUT GUIDELINES
V
=1.2V
IN
180
V
= 3V
OUT
The high speed operation of the LTC3400/LTC3400B
demandscarefulattentiontoboardlayout. Youwillnotget
advertised performance with careless layout. Figure 2
shows the recommended component placement. A large
groundpincopperareawillhelptolowerthechiptempera-
ture. A multilayer board with a separate ground plane is
ideal, but not absolutely necessary.
V
= 3.3V
= 3.6V
OUT
OUT
160
140
120
110
80
V
V
= 5V
OUT
60
3
5
7
9
11 13 15 17 19 21 23
(OPTIONAL)
INDUCTANCE (µH)
3400 F03
1
2
3
SW
V
6
5
4
IN
Figure 3. Maximum Output Current vs
Inductance Based On 90% Efficiency
V
IN
GND V
OUT
FB SHDN
SHDN
V •D
IN
I
OUT(MAX) = η • IP –
• 1–D
(
)
f •L • 2
V
OUT
where:
η = estimated efficiency
3400 F02
RECOMMENDED COMPONENT PLACEMENT. TRACES
CARRYING HIGH CURRENT ARE DIRECT. TRACE AREA AT
FB PIN IS SMALL. LEAD LENGTH TO BATTERY IS SHORT
IP = peak current limit value (0.6A)
VIN = input (battery) voltage
Figure 2. Recommended Component Placement
for Single Layer Board
D = steady-state duty ratio = (VOUT – VIN)/VOUT
f = switching frequency (1.2MHz typical)
L = inductance value
COMPONENT SELECTION
The inductor current ripple is typically set for 20% to 40%
of the maximum inductor current (IP). High frequency
ferrite core inductor materials reduce frequency depen-
dent power losses compared to cheaper powdered iron
types, improving efficiency. The inductor should have low
ESR (series resistance of the windings) to reduce the I2R
power losses, and must be able to handle the peak
inductor current without saturating. Molded chokes and
some chip inductors usually do not have enough core to
support the peak inductor currents of 850mA seen on the
LTC3400/LTC3400B. To minimize radiated noise, use a
toroid, pot core or shielded bobbin inductor. See Table 1
for some suggested components and suppliers.
Inductor Selection
The LTC3400/LTC3400B can utilize small surface mount
and chip inductors due to their fast 1.2MHz switching
frequency. A minimum inductance value of 3.3µH is
necessary for 3.6V and lower voltage applications and
4.7µHforoutputvoltagesgreaterthan3.6V. Largervalues
of inductance will allow greater output current capability
by reducing the inductor ripple current. Increasing the
inductance above 10µH will increase size while providing
little improvement in output current capability.
TheapproximateoutputcurrentcapabilityoftheLTC3400/
LTC3400B versus inductance value is given in the equa-
tion below and illustrated graphically in Figure 3.
3400f
6
LTC3400/LTC3400B
W U U
APPLICATIO S I FOR ATIO
U
Table 1. Recommended Inductors
to maintain acceptable phase margin. X5R and X7R
dielectric materials are preferred for their ability to main-
taincapacitanceoverwidevoltageandtemperatureranges.
MAX
DCR
L
HEIGHT
(mm)
PART
(µH)
mΩ
VENDOR
Low ESR input capacitors reduce input switching noise
and reduce the peak current drawn from the battery. It
follows that ceramic capacitors are also a good choice for
input decoupling and should be located as close as pos-
sible to the device. A 4.7µF input capacitor is sufficient for
virtually any application. Larger values may be used with-
out limitations. Table 2 shows a list of several ceramic
capacitor manufacturers. Consult the manufacturers di-
rectly for detailed information on their entire selection of
ceramic parts.
CDRH5D18-4R1
CDRH5D18-100
CDRH3D16-4R7
CDRH3D16-6R8
CR43-4R7
CR43-100
CMD4D06-4R7MC
4.1
10
4.7
57
2.0
2.0
1.8
1.8
3.5
3.5
0.8
0.8
Sumida
(847) 956-0666
www.sumida.com
124
105
170
109
182
216
174
4.7
10
4.7
CMD4D06-3R3MC
3.3
DS1608-472
DS1608-103
DO1608C-472
4.7
10
4.7
60
75
90
2.9
2.9
2.9
Coilcraft
(847) 639-6400
www.coilcraft.com
D52LC-4R7M
D52LC-100M
4.7
10
84
137
2.0
2.0
Toko
(408) 432-8282
www.tokoam.com
Table 2. Capacitor Vendor Information
SUPPLIER
AVX
PHONE
WEBSITE
LQH3C4R7M24
4.7
195
2.2
Murata
www.murata.com
(803) 448-9411
(714) 852-2001
(408) 573-4150
www.avxcorp.com
www.murata.com
www.t-yuden.com
Murata
Taiyo Yuden
Output and Input Capacitor Selection
LowESR(equivalentseriesresistance)capacitorsshould
be used to minimize the output voltage ripple. Multilayer
ceramic capacitors are an excellent choice as they have
extremely low ESR and are available in small footprints. A
2.2µF to 10µF output capacitor is sufficient for most
applications. Larger values up to 22µF may be used to
obtain extremely low output voltage ripple and improve
transient response. An additional phase lead capacitor
may be required with output capacitors larger than 10µF
Output Diode
Use a Schottky diode such as an MBR0520L, CMDSH2-3,
1N5817orequivalentiftheconverteroutputvoltageis4.5V
orgreater.TheSchottkydiodecarriestheoutputcurrentfor
the time it takes for the synchronous rectifier to turn on. Do
not use ordinary rectifier diodes, since the slow recovery
times will compromise efficiency. A Schottky diode is
optional for output voltages below 4.5V, but will increase
converter efficiency by 2% to 3%.
3400f
7
LTC3400/LTC3400B
U
TYPICAL APPLICATIO S
Single Cell to 3.3V Synchronous Boost Converter
with Load Disconnect in Shutdown
L1
4.7µH
D1
1
+
SINGLE
C1
4.7µF
M1
AA CELL
SW
V
Si2305DS
OUT
6
5
3.3V
V
IN
V
OUT
R1
1.02M
1%
R3
510k
100mA
LTC3400
4
3
OFF
SHDN
GND
FB
ON
R2
604k
1%
C2
4.7µF
2
Q1
2N3904
D1: CENTRAL SEMI CMDSH2-3
L1: COILCRAFT DS1608-472
R3
510k
3400 TA01a
3400f
8
LTC3400/LTC3400B
U
TYPICAL APPLICATIO S
Single Lithium Cell to 5V, 250mA
L1
4.7µH
D1
1
+
LITHIUM
CELL
C1
4.7µF
SW
6
5
3
V
IN
V
OUT
R1
1.82M
1%
C2
4.7µF
LTC3400
SHDN FB
GND
4
OFF
ON
R2
604k
1%
2
D1: CENTRAL SEMI CMDSH2-3
L1: SUMIDA CMD4D06-4R7
3400 TA02a
3.6V to 5V Efficiency
100
90
80
70
60
50
LTC3400
= 4.7µF
C
O
L = 4.7µH
0.1
1
10
100
1000
LOAD CURRENT (mA)
3400 TA02b
3400f
9
LTC3400/LTC3400B
U
TYPICAL APPLICATIO S
Single Cell AA Cell to ±3V Synchronous Boost Converter
C3
1µF
L1
4.7µH
1
+
SINGLE
AA CELL
C1
4.7µF
SW
V
OUT1
6
5
3
3V
V
IN
V
OUT
R1
1.02M
1%
C2
4.7µF
90mA
LTC3400
SHDN FB
GND
D1 D2
4
OFF
ON
R2
750k
1%
C4
10µF
V
OUT2
2
–3V
3400 TA03a
10mA
D1, D2: ZETEX FMND7000 DUAL DIODE
L1: COILCRAFT DS1608-472
3400f
10
LTC3400/LTC3400B
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic SOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.754
0.854 ±0.127
1.50 – 1.75
(NOTE 4)
2.80 BSC
3.254
PIN ONE ID
0.95 BSC
1.9 BSC
0.30 – 0.45 TYP
6 PLCS (NOTE 3)
RECOMMENDED SOLDER PAD LAYOUT
0.95 BSC
0.80 – 0.90
0.20 BSC
0.01 – 0.10
1.00 MAX
DATUM ‘A’
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0801
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3400f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LTC3400/LTC3400B
U
TYPICAL APPLICATIO
Single AA Cell to 2.5V Synchronous Boost Converter
L1
3.3µH
D1
1
+
SINGLE
AA CELL
C1
SW
4.7µF
V
OUT
6
5
3
2.5V
V
V
IN
LTC3400
SHDN FB
GND
OUT
R1
1.02M
1%
130mA
4
C2
OFF
ON
4.7µF
R2
1.02M
1%
2
D1: CENTRAL SEMI CMDSH2-3
L1: SUMIDA CMD4D06-3R3MC
3400 TA04a
RELATED PARTS
PART NUMBER
LT1308A/LT1308B
LT1613
DESCRIPTION
COMMENTS
High Current, Micropower, Single Cell 600kHz DC/DC Converter
1.4MHz, Single Cell DC/DC Converter in ThinSOT
5V at 1A with Single Li-Ion Cell, V
to 34V
OUT
V
as Low as 1.1V, 3V at 30mA from Single Cell
IN
LT1615
LT®1618
Micropower Step-Up DC/DC Converter in ThinSOT
1.4MHz Step-Up DC/DC Converter with Current Limit
I = 20µA, 1µA Shutdown Current, V as Low as 1V
Q IN
1.5A Switch, 1.6V to 18V Input Range,
Input or Output Current Limiting
LT1619
High Efficiency Boost DC/DC Controller
ThinSOT Boost DC/DC Controller
1A Gate Drive, 1.1V to 20V Input, Separate V for Gate Drive
CC
LTC1872
50kHz, 2.5V to 9.8V Input
LT1930/LT1930A
LT1932
1.2MHz/2.2MHz DC/DC Converters in ThinSOT
Constant Current Step-Up LED Driver
1.2MHz/2.7MHz Boost DC/DC Converters
600kHz, 1A Switch PWM DC/DC Converter
V = 2.6V to 16V, 5V at 450mA from 3.3V Input
IN
Drives Up to Eight White LEDs, ThinSOT Package
1.5A, 36V Internal Switch, 8-Pin MSOP Package
LT1946/LT1946A
LT1949
1A, 0.5Ω, 30V Internal Switch, V as Low as 1.5V,
IN
Low-Battery Detect Active in Shutdown
LTC3401
LTC3402
LTC3423
LTC3424
1A, 3MHz Micropower Synchronous Boost Converter
2A, 3MHz Micropower Synchronous Boost Converter
1A, 3MHz Micropower Synchronous Boost Converter
2A, 3MHz Micropower Synchronous Boost Converter
1A Switch, Programmable Frequency, 10-Pin MSOP Package
2A Switch, Programmable Frequency, 10-Pin MSOP Package
1A Switch, Separate Bias Pin for Low Output Voltages
2A Switch, Separate Bias Pin for Low Output Voltages
3400f
LT/TP 0302 2K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
LINEAR TECHNOLOGY CORPORATION 2001
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