LTC3634EFE#TRPBF [Linear]
LTC3634 - 15V Dual 3A Monolithic Step-Down Regulator for DDR Power; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C;型号: | LTC3634EFE#TRPBF |
厂家: | Linear |
描述: | LTC3634 - 15V Dual 3A Monolithic Step-Down Regulator for DDR Power; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C 双倍数据速率 开关 光电二极管 |
文件: | 总28页 (文件大小:496K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC3634
15V Dual 3A Monolithic
Step-Down Regulator
for DDR Power
FEATURES
DESCRIPTION
n
3.6V to 15V Input Voltage Range
TheLTC®3634isahighefficiency,dual-channelmonolithic
synchronous step-down regulator which provides power
supply and bus termination rails for DDR1, DDR2, and
DDR3 SDRAM controllers. The operating input voltage
range is 3.6V to 15V, making it suitable for point-of-load
power supply applications from a 5V or 12V input, as well
as various battery powered systems.
n
3A Output Current per Channel
n
Up to 95% Efficiency
n
Selectable 90°/180° Phase Shift Between Channels
n
Adjustable Switching Frequency: 500kHz to 4MHz
n
VTTR = V
/2 = V Reference
DDQ
TT
n
n
n
n
1.6% Accurate VTTR at 0.75V
Optimal V Range: 0.6V to 3V
OUT
The V regulated output voltage is equal to VDDQIN•0.5.
TT
10mA Buffered Output Supplies V Reference Voltage
REF
An on-chip buffer capable of driving a 10mA load pro-
vides a low noise reference output (VTTR) also equal to
VDDQIN•0.5.
Current Mode Operation for Excellent Line and Load
Transient Response
n
n
n
n
n
External Clock Synchronization
The operating frequency is programmable and synchro-
nizable from 500kHz to 4MHz with an external resistor.
The two channels can operate 180° out-of-phase, which
relaxestherequirementsforinputandoutputcapacitance.
The unique controlled on-time architecture is ideal for
powering DDR applications from a 12V supply at high
switchingfrequencies,allowingtheuseofsmallerexternal
components.
Short-Circuit Protected
Input Overvoltage and Overtemperature Protection
Power Good Status Outputs
Available in (4mm × 5mm) QFN-28 and Thermally
Enhanced 28-Lead TSSOP Packages
APPLICATIONS
n
DDR Memory Power Supplies
The LTC3634 is offered in both 28-pin 4mm × 5mm QFN
and 28-pin exposed pad TSSOP packages.
L, LT, LTC, LTM, Linear Technology, the Linear logo, Burst Mode and PolyPhase are registered
trademarks and Hot Swap is a trademark of Linear Technology Corporation. All other trademarks
are the property of their respective owners. Protected by U.S. Patents including 5481178,
5847554, 6580258, 6476589, 6774611.
TYPICAL APPLICATION
V
IN
Efficiency and Power Loss
vs Load Current
3.6V TO 15V
47µF
V
V
IN1
IN2
×2
100
90
80
70
60
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
RUN1
RUN2
BOOST1
SW1
V
= 12V
IN
0.1µF
0.1µF
1.5µH
V
DDQ
LTC3634
INTV
CC
1.8V/3A
PHMODE
MODE/SYNC
V
ON1
2.2µF
100µF
×2
VDDQIN
24.3k
12.1k
0.82µH
V
V
V
DDQ
V
FB1
(SINKING CURRENT)
TT
TT
RT
ITH1
(SOURCING CURRENT)
BOOST2
324k
26.4k
560pF
V
TT
SW2
0.9V/ 3A
V
FB2
100µF
×4
V
ON2
V
REF
ITH2
VTTR
0.9V
0.01µF
SGND PGND
18k
910pF
2
3
0
0.5
1
1.5
2.5
3634 TA01a
LOAD CURRENT (A)
3634 TA01b
3634fc
1
For more information www.linear.com/LTC3034
LTC3634
(Note 1)
ABSOLUTE MAXIMUM RATINGS
V
V
, V ................................................... –0.3V to 16V
IN1 IN2
SW Source and Sink Current (DC) (Note 3) ................3A
Operating Junction Temperature Range (Notes 4, 5, 8)
LTC3634E, LTC3634I......................... –40°C to 125°C
LTC3634H.......................................... –40°C to 150°C
LTC3634MP....................................... –55°C to 150°C
Storage Temperature Range ..................–65°C to 150°C
Lead Temperature
IN1 IN2
, V Transient (Note 2)......................................18V
PGOOD1, PGOOD2, V , V ................. –0.3V to 16V
ON1 ON2
VTTR, INTV , TRACKSS, VDDQIN .......... –0.3V to 3.6V
ITH1, ITH2, RT, MODE/SYNC.....–0.3V to INTV + 0.3V
CC
CC
V
, V , PHMODE..................–0.3V to INTV + 0.3V
FB1 FB2
CC
BOOST1-SW1, BOOST2-SW2.................... –0.3V to 3.6V
BOOST1, BOOST2....................................–0.3V to 19.6V
(Soldering, 10 sec, TSSOP Package).....................260°C
RUN1, RUN2 .................................... –0.3V to V + 0.3V
IN
PIN CONFIGURATION
TOP VIEW
TOP VIEW
1
2
V
ON1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
ITH1
SW1
SW1
TRACKSS
3
V
FB1
28 27 26 25 24 23
4
V
PGOOD1
PHMODE
RUN1
IN1
PGOOD1
PHMODE
RUN1
1
2
3
4
5
6
7
8
22
21
20
19
18
17
16
15
V
V
IN1
IN1
5
V
IN1
6
BOOST1
BOOST1
7
INTV
CC
MODE/SYNC
RT
29
PGND
MODE/SYNC
RT
INTV
CC
29
PGND
8
VTTR
VTTR
9
BOOST2
RUN2
RUN2
BOOST2
10
11
12
13
14
V
SGND
IN2
SGND
V
V
IN2
IN2
V
PGOOD2
PGOOD2
IN2
9
10 11 12 13 14
UFD PACKAGE
SW2
SW2
V
FB2
VDDQIN
ITH2
V
ON2
FE PACKAGE
28-LEAD (4mm × 5mm) PLASTIC QFN
28-LEAD PLASTIC TSSOP
T
= 150°C, θ = 43°C/W
JMAX
JA
T
= 150°C, θ = 25°C/W
JA
EXPOSED PAD (PIN 29) IS PGND, MUST BE SOLDERED TO PCB
JMAX
EXPOSED PAD (PIN 29) IS PGND, MUST BE SOLDERED TO PCB
3634fc
2
For more information www.linear.com/LTC3034
LTC3634
ORDER INFORMATION
LEAD FREE FINISH
LTC3634EUFD#PBF
LTC3634IUFD#PBF
LTC3634HUFD#PBF
LTC3634MPUFD#PBF
LTC3634EFE#PBF
LTC3634IFE#PBF
TAPE AND REEL
PART MARKING*
PACKAGE DESCRIPTION
TEMPERATURE RANGE
–40°C to 125°C
–40°C to 125°C
–40°C to 150°C
–55°C to 150°C
–40°C to 125°C
–40°C to 125°C
–40°C to 150°C
–55°C to 150°C
LTC3634EUFD#TRPBF
LTC3634IUFD#TRPBF
LTC3634HUFD#TRPBF
3634
3634
3634
28-Lead (5mm × 4mm) Plastic QFN
28-Lead (5mm × 4mm) Plastic QFN
28-Lead (5mm × 4mm) Plastic QFN
28-Lead (5mm × 4mm) Plastic QFN
28-Lead Plastic TSSOP
LTC3634MPUFD#TRPBF 3634
LTC3634EFE#TRPBF
LTC3634IFE#TRPBF
LTC3634HFE#TRPBF
LTC3634MPFE#TRPBF
LTC3634FE
LTC3634FE
LTC3634FE
LTC3634FE
28-Lead Plastic TSSOP
LTC3634HFE#PBF
LTC3634MPFE#PBF
28-Lead Plastic TSSOP
28-Lead Plastic TSSOP
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/. Some packages are available in 500 unit reels through
designated sales channels with #TRMPBF suffix.
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified junction
temperature range, otherwise specifications are at TA = 25°C (Note 4). VIN = 12V, INTVCC = 3.3V, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
l
l
V
V
V
, Operating Supply Range
, Operating Supply Range
3.6
1.4
15
15
V
V
IN
IN1
IN2
V
V
> 3.6V
IN1
ON
Output Voltage Range
= V
(Note 6)
0.6
3
V
OUT
I
Input DC Supply Current (V + V
)
IN2
Q
IN1
Active (Note 7)
Shutdown
RUN1 = RUN2 = V
1.3
15
mA
µA
IN
RUN1 = RUN2 = 0V
V
Feedback Reference Voltage
3.6V < V < 15V, 0.5V < ITH < 1.8V
FBREG1
FBREG2
IN
l
l
0°C < T < 85°C
0.594
0.592
0.6
0.6
0.606
0.606
V
V
A
–55°C < T < 150°C
A
l
l
V
Feedback Reference Voltage
VTTR Voltage Reference
3.6V < V < 15V, 0.5V < ITH < 1.8V
VTTR – 6
0.492 •
VDDQIN VDDQIN VDDQIN
VTTR
VTTR + 6
0.508 •
mV
V
IN
VTTR
1.5V < VDDQIN < 2.6V
0.50 •
I
=
10mA, C
< 10nF
LOAD
LOAD
I
Feedback Pin Input Current
Error Amplifier Transconductance
Minimum On-Time
30
nA
mS
ns
FB
g
ITH = 1.2V
1.0
20
m(EA)
ON(MIN)
OFF(MIN)
OSC
t
t
f
V
V
V
= 0.5V, V = 4V
IN
ON
IN
Minimum Off-Time
= 6V
40
60
ns
Oscillator Frequency
= INTV
R = 162k
1.4
1.7
3.4
2
2
4
2.6
2.3
4.6
MHz
MHz
MHz
RT
T
CC
R = 80.6k
T
I
I
Channel 1 Valley Switch Current Limit
Positive Limit
LIM1
LIM2
3.3
3.3
4.4
8
5.5
5.5
A
A
Negative Limit
Channel 2 Valley Switch Current Limit
Positive Limit
Negative Limit
4.4
8
A
A
R
DS(ON)
Channel 1
Top Switch On-Resistance
Bottom Switch On-Resistance
Channel 2
130
65
mΩ
mΩ
Top Switch On-Resistance
Bottom Switch On-Resistance
130
65
mΩ
mΩ
3634fc
3
For more information www.linear.com/LTC3034
LTC3634
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating
temperature range, otherwise specifications are at TA = 25°C (Note 4). VIN = 12V, INTVCC = 3.3V, unless otherwise noted.
SYMBOL PARAMETER
Switch Leakage Current
Overvoltage Lockout Threshold
CONDITIONS
MIN
TYP
MAX
UNITS
V
IN
= 15V, V
= 0V
RUN
0.01
1
µA
V
V
IN
V
IN
Rising
Falling
16.8
15.8
17.5
16.5
18
17
V
V
IN
INTV Voltage
3.6V < V < 15V, 0mA Load
3.1
3.3
0.7
3.5
V
CC
IN
INTV Load Regulation
0mA to 50mA Load, V = 4V to 15V
%
CC
IN
l
l
RUN Threshold Rising
RUN Threshold Falling
1.18
0.98
1.22
1.01
1.26
1.04
V
V
RUN Leakage Current
0
1
µA
PGOOD Good-to-Bad Threshold
V
FB
V
FB
Rising
Falling
8
–8
10
–10
%
%
PGOOD Hysteresis
V
from Bad-to-Good
15
15
mV
Ω
FB
R
PGOOD Pull-Down Resistance
Power Good Filter Time
10mA Load
PGOOD
20
0.7
40
µs
t
t
Channel 1 Internal Soft-Start Ramp Rate
Channel 2 Internal Soft-Start Ramp Rate
1.2
2.2
0.3
1.4
V/ms
V/ms
V
SS1
1.5
SS2
V
FB1
During Tracking
TRACKSS = 0.3V
PHMODE = 0V
0.28
0.315
I
TRACKSS Pull-Up Current
µA
TRACKSS
Phase Shift Between Channel 1 and
Channel 2
90
180
deg
deg
PHMODE = INTV
CC
PHMODE Threshold Voltage
V
V
1
1
V
V
IH
IL
0.3
0.4
MODE/SYNC Threshold Voltage
V
IH
V
IL
V
V
SYNC Threshold Voltage
MODE/SYNC Input Current
V
0.95
V
IH
MODE = 0V
MODE = INTV
1.5
–1.5
µA
µA
CC
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
these specifications is determined by specific operating conditions in
conjunction with board layout, the rated package thermal impedance and
other environmental factors.
Note 5: The junction temperature (T , in °C) is calculated from the ambient
J
Note 2: Transient event duration must be < 1% of total lifetime of the part.
Note 3: Guaranteed by long term current density limitations.
Note 4: The LTC3634 is tested under pulsed load conditions such that
temperature (T , in °C), package thermal impedance (θ , in °C/W), and
A
J
A
power dissipation (P , in Watts) according to the formula: T = T + P • θ .
JA
D
J
A
D
Note 6: Output voltage settings above 3V are not optimized for controlled
on-time operation. For designs that set output voltages above 3V, please
refer to the Applications Information section for information on device
operation outside the optimized range.
Note 7: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 150°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
T ≈ T . The LTC3634E is guaranteed to meet specified performance
J
A
from 0°C to 85°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3634I is guaranteed to meet specifications over the –40°C to 125°C
operating junction temperature range. The LTC3634H is guaranteed
over the –40°C to 150°C operating junction temperature range and the
LTC3634MP is tested and guaranteed over the –55°C to 150°C operating
junction temperature range. High junction temperatures degrade operating
lifetimes; operating lifetime is derated for junction temperatures greater
than 125°C. Note that the maximum ambient temperature consistent with
3634fc
4
For more information www.linear.com/LTC3034
LTC3634
TA = 25°C, VIN = 12V, fSW = 1MHz, L = 1.5μH unless
TYPICAL PERFORMANCE CHARACTERISTICS
otherwise noted.
Efficiency vs Load Current
(Burst Mode Operation)
Efficiency vs Load Current
(Forced Continuous)
Efficiency vs Load Current
(Forced Continuous)
100
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
V
OUT
= 1.8V
V
OUT
= 1.8V
V
OUT
= 1.5V
90
80
70
60
50
40
30
20
10
0
V
IN
V
IN
V
IN
V
IN
= 4V
= 8V
= 12V
= 15V
V
IN
V
IN
V
IN
V
IN
= 4V
= 8V
= 12V
= 15V
V
IN
V
IN
V
IN
V
IN
= 4V
= 8V
= 12V
= 15V
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
LOAD CURRENT (A)
LOAD CURRENT (A)
LOAD CURRENT (A)
3634 G01
3634 G02
3634 G03
VTT Power Loss vs Load Current,
Sourcing and Sinking
Efficiency vs Input Voltage
VTT Power Loss vs Load Current
1.2
1.0
0.8
0.6
0.4
0.2
0
95
90
85
80
75
70
65
60
1.2
1.0
0.8
0.6
0.4
0.2
0
V
IN
V
IN
V
IN
= 12V
= 8V
= 4V
V
= 0.75V
V
IN
V
IN
V
IN
V
IN
= 15V
= 12V
= 8V
V
= 0.9V
TT
TT
L = 0.82µH
L = 0.82µH
= 4V
I
I
I
I
= 10mA
= 100mA
= 1A
OUT
OUT
OUT
OUT
= 3A
–3
–2
–1
0
1
2
3
4
6
8
10
12
14
16
–3
–2
–1
0
1
2
3
OUTPUT CURRENT (A)
INPUT VOLTAGE (V)
OUTPUT CURRENT (A)
3634 G04
3634 G05
3634 G06
Reference Voltage
vs Temperature
Oscillator Frequency
vs Temperature
Oscillator Internal Set Frequency
vs Temperature
0.605
0.603
0.601
0.599
0.597
0.595
10
8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
6
4
2
0
–2
–4
–6
–8
–10
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
3634 G07
3634 G08
3634 G09
3634fc
5
For more information www.linear.com/LTC3034
LTC3634
TA = 25°C, VIN = 12V, fSW = 1MHz, L = 1.5μH unless
Switch Leakage vs Temperature
TYPICAL PERFORMANCE CHARACTERISTICS
otherwise noted.
RDS(ON) vs Temperature
Shutdown Current vs VIN
180
160
140
120
100
80
20
18
16
14
12
10
8
20000
MAIN SWITCH
SYNCHRONOUS SWITCH
TOP SWITCH
16000
12000
8000
4000
0
BOTTOM SWITCH
60
6
40
4
20
2
0
0
4
6
8
10
(V)
12
14
16
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
–50 –25
0
25 50 75 100
TEMPERATURE (°C)
125 150
V
IN
3634 G11
3634 G10
3634 G12
Valley Current Positive Limit
vs Temperature
Valley Current Negative Limit
vs Temperature
TRACKSS Pull-Up Current
vs Temperature
–4
–5
2.0
1.8
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
–6
1.6
1.4
1.2
1.0
0.8
–7
–8
–9
–10
0.6
–11
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
3634 G15
–50 –25
0
25 50 75 100 125 150
TEMPERATURE (°C)
3634 G14
3634 G13
3634fc
6
For more information www.linear.com/LTC3034
LTC3634
TA = 25°C, VIN = 12V, fSW = 1MHz, L = 1.5μH unless
TYPICAL PERFORMANCE CHARACTERISTICS
otherwise noted.
Load Regulation
VTTR Load Regulation
VDDQ Load Step
0.2
0.1
0.3
0.2
VDDQ
TT
V
V
OUT
100mV/DIV
AC-COUPLED
0.1
0
0
–0.1
–0.2
–0.3
I
L
–0.1
2A/DIV
–0.2
3634 G18
–4
6
10
20µs/DIV
0
2
3
–10 –8 –6
–2
0
2
4
8
–3
–2
–1
1
V
LOAD
= 1.8V
= 0A TO 3A
OUT
VTTR LOAD CURRENT (mA)
LOAD CURRENT (A)
I
3634 G17
3634 G16
V
TT Load Step
Start-Up
Start-Up (Channel 2)
RUN2
5V/DIV
V
RUN1 = RUN2
5V/DIV
OUT
100mV/DIV
AC-COUPLED
V
DDQ
V
DDQ
V
V
V
TT
TT
DDQ
TT
V
V
DDQ
TT
V
1V/DIV
1V/DIV
I
L
2A/DIV
VTTR
1V/DIV
VTTR
1V/DIV
3634 G19
3634 G20
3634 G21
20µs/DIV
200µs/DIV
200µs/DIV
RUN1 = 5V
V
LOAD
= 0.9V
= –2A TO 2A
OUT
I
3634fc
7
For more information www.linear.com/LTC3034
LTC3634
PIN FUNCTIONS (QFN/TSSOP)
PGOOD1(Pin1/Pin4):Channel1Open-DrainPowerGood
PGOOD2 (Pin 8/Pin 11): Channel 2 Open-Drain Power
Output Pin. PGOOD1 is pulled to ground when the voltage
Good Output Pin. PGOOD2 is pulled to ground when
on the V pin is not within 8% (typical) of the internal
the voltage on the V pin is not within 8% (typical) of
FB1
FB2
0.6V reference. This threshold has 15mV of hysteresis.
VDDQIN • 0.5. This threshold has 15mV of hysteresis.
PHMODE (Pin 2/Pin 5): Phase Select Input. Tie this pin to
V
(Pin 9/Pin 12): Channel 2 Output Feedback Voltage
FB2
ground to forceboth channels to switch 90° out-of-phase.
Pin.Inputtotheerroramplifierthatcomparesthefeedback
voltage to VTTR. Connect this pin directly to the output in
Tie this pin to INTV to force both channels to switch
CC
180° out-of-phase. Do not float this pin.
order to set V
equal to VTTR.
OUT2
RUN1 (Pin 3/Pin 6): Channel 1 Regulator Enable Pin.
Enables channel 1 operation by tying RUN1 above 1.22V.
Tying it below 1V places Channel 1 into shutdown. Do not
float this pin.
VDDQIN (Pin 10/Pin 13): External Reference Input for
Channel 2. An internal resistor divider sets the VTTR pin
voltage to be equal to half the voltage applied to this input.
Channel 2 uses the VTTR pin voltage as its error amplifier
reference.
MODE/SYNC (Pin 4/Pin 7): Channel 1 Mode Select and
External Synchronization Input. Tie this pin to ground to
force continuous synchronous operation on Channel 1.
ITH2 (Pin 11/Pin 14): Channel 2 Error Amplifier Output
and Switching Regulator Compensation Pin. Connect this
pintoappropriateexternalcomponentstocompensatethe
regulator loop frequency response. See the Applications
Informationsectionforguidelinesoncomponentselection.
Floating this pin or tying it to INTV enables high
CC
efficiency Burst Mode® operation at light loads. Channel 2
operation is forced continuous regardless of the state of
this pin. Drive this pin with a clock to synchronize the
LTC3634 switching frequency. An internal phase-locked
loopwillforcethebottompowerNMOS’sturn-onsignalto
be synchronized with the rising edge of the CLKIN signal.
When this pin is driven with a clock, forced continuous
mode is automatically selected.
V
(Pin 12/Pin 15): On-Time Voltage Input for Chan-
ON2
nel 2. This pin sets the voltage trip point for the on-time
comparator. Tying this pin to the output voltage makes the
on-time proportional to V
OUT2
the set frequency (see the Applications Information sec-
tion). The pin impedance is nominally 150kΩ.
when V
< 3V. When
OUT2
OUT2
V
> 3V, switching frequency may become higher than
RT (Pin 5/Pin 8): Oscillator Frequency Program Pin.
Connect an external resistor (between 80k to 640k) from
this pin to SGND in order to program the frequency from
SW2 (Pins 13, 14/Pins 16, 17): Channel 2 Switch Node
Connection to External Inductor. Voltage swing of SW is
from a diode voltage below ground to a diode voltage
500kHz to 4MHz. When RT is tied to INTV , the switch-
CC
ing frequency will default to 2MHz. See the Applications
above V
.
IN2
Information section.
V
(Pins 15, 16/Pins 18, 19): Power Supply Input for
IN2
RUN2 (Pin 6/Pin 9): Channel 2 Regulator Enable Pin.
Enables channel 2 operation by tying RUN2 above 1.22V.
Tying it below 1V places Channel 2 into shutdown. Do not
float this pin.
Channel 2. Input voltage to the on-chip power MOSFETs
on channel 2. This input is capable of operating from a
supply voltage separate from V
.
IN1
BOOST2 (Pin 17/Pin 20): Boosted Floating Driver Supply
for Channel 2. The (+) terminal of the bootstrap capacitor
connects to this pin while the (–) terminal connects to
the SW pin. The normal operation voltage swing of this
SGND (Pin 7/Pin 10): Signal Ground Pin. This pin should
have a low noise connection to reference ground. The
feedbackresistornetwork,externalcompensationnetwork,
and R resistor should be connected to this ground.
T
pin ranges from a diode voltage drop below INTV up
CC
to V + INTV .
IN2
CC
3634fc
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LTC3634
PIN FUNCTIONS (QFN/TSSOP)
VTTR (Pin 18/Pin 21): Reference Output. This output is
higher than the set frequency (see the Applications Infor-
mation section). The pin impedance is nominally 150kΩ.
used to supply the V voltage for DDR memory. An on-
REF
chip buffer amplifier outputs a low noise reference voltage
equal to VDDQIN/2. This output is capable of supplying
10mA. The buffer output can drive capacitive loads up to
0.01µF. Asmallseriesresistance(1Ω)betweentheoutput
and the load further increases the amount of capacitance
that the amplifier can drive. The error amplifier for channel
2 uses this voltage as its reference voltage.
ITH1 (Pin 26/Pin 1): Channel 1 Error Amplifier Output and
Switching Regulator Compensation Pin. Connect this pin
to appropriate external components to compensate the
regulator loop frequency response. See the Applications
Informationsectionforguidelinesoncomponentselection.
TRACKSS (Pin 27/Pin 2): Output Tracking and Soft-Start
Input Pin for Channel 1. Forcing a voltage below 0.6V on
this pin bypasses the internal reference input to the error
amplifier. The LTC3634 will servo the FB pin to the TRACK
voltage. Above 0.6V, the tracking function stops and the
internal reference resumes control of the error amplifier.
INTV (Pin 19/Pin 22): Internal 3.3V Regulator Output.
CC
The internal gate drivers and control circuits are powered
from this voltage. Decouple this pin to power ground with
a minimum of 1μF low ESR ceramic capacitor. The internal
regulator is disabled when both Channel 1 and Channel 2
are disabled with the RUN1/RUN2 inputs.
An internal 1.4μA pull-up current from INTV allows a
CC
soft-start function to be implemented by connecting a
BOOST1 (Pin 20/Pin 23): Boosted Floating Driver Supply
for Channel 1. The (+) terminal of the bootstrap capacitor
connects to this pin while the (–) terminal connects to
the SW pin. The normal operation voltage swing of this
capacitor between this pin and SGND.
V
(Pin 28/Pin 3): Channel 1 Output Feedback Voltage
FB1
Pin.Inputtotheerroramplifierthatcomparesthefeedback
voltagetotheinternal0.6Vreferencevoltage. Connectthis
pin to a resistor divider network to program the desired
pin ranges from a diode voltage drop below INTV up
CC
to V + INTV .
IN1
CC
output voltage. Connecting this pin to INTV configures
CC
V
(Pins 21, 22/Pins 24, 25): Power Supply Input for
the LTC3634 for 2-phase, single output operation; see
IN1
Channel 1. Input voltage to the on-chip power MOSFETs
the Applications Information section for full discussion.
on channel 1. The internal LDO for INTV is powered
from this pin.
CC
PGND (Exposed Pad Pin 29/Exposed Pad Pin 29): Power
GroundPin. The(–)terminaloftheinputbypasscapacitor,
SW1 (Pins 23, 24/Pins 26, 27): Channel 1 Switch Node
Connection to External Inductor. Voltage swing of SW is
from a diode voltage drop below ground to a diode volt-
, and the (–) terminal of the output capacitor, C
,
C
IN
OUT
should be tied to this pin with a low impedance connec-
tion. This pin must be soldered to the PCB to provide a
low impedance electrical contact to power ground and
good thermal contact to the PCB.
age above V
.
IN1
V
(Pin 25/Pin 28): On-Time Voltage Input for Chan-
ON1
nel 1. This pin sets the voltage trip point for the on-time
comparator. Tying this pin to the regulated output voltage
makes the on-time proportional to V
3V. When V
when V
<
OUT1
OUT1
> 3V, switching frequency may become
OUT1
3634fc
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LTC3634
BLOCK DIAGRAM
C
IN
V
RUN
1.22V
V
CHANNEL 1
ON
IN
+
–
A
V
= 1
150k
RUN
INTV
CC
V
I
IN
3V
I
ON
V
I
ON
VON
t
ON
=
OSC1
R
S
BOOST
CONTROLLER
ON
ON
Q
SWITCH
LOGIC
AND
TG
C
BOOST
M1
M2
SW
L1
ANTI-
SHOOT
THROUGH
I
I
REV
CMP
BG
C
OUT
PGND
+
+
–
–
–
+
SENSE
SENSE
R2
R1
V
FB1
IDEAL DIODES
ITH1
0.6V
REF
+
–
EA
–
R
C1
0.648V
C
C1
OV
PGOOD1
INTERNAL
SOFT-START
+
INTV
CC
–
+
TRACKSS
0.552V
–
+
FC BURST
1.4µA
MODE
SELECT
TRACKSS
UV
C
SS
OSC1
OSC
0.48V AT START-UP
0.10V AFTER START-UP
RT
MODE/SYNC
VDDQIN
OSC
PLL-SYNC
R
RT
PHMODE
PHASE
SELECT
INTV
CC
–
VDDQIN • 0.54
3.3V
REG
PV
IN1
C
VCC
OV
UV
OSC2
PGOOD2
+
VDDQIN • 0.5
–
+
VTTR
–
+
IDEAL DIODES
VDDQIN • 0.46
INTERNAL
+
–
SOFT-START
ITH2
EA
V
FB2
R
C2
C
C2
CHANNEL 2 (SAME AS CHANNEL 1)
3634 BD
3634fc
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LTC3634
OPERATION
drive. The error amplifier for channel 2 uses this voltage
as its reference voltage.
The LTC3634 is a dual-channel, current mode monolithic
step-down regulator designed to provide high efficiency
power conversion for DDR memory supplies and bus ter-
mination.Itsuniquecontrolledon-timearchitectureallows
extremely low step-down ratios while maintaining a fast,
constant switching frequency. Each channel is enabled by
raising the voltage on the RUN pin above 1.22V nominally.
High Efficiency Burst Mode Operation
At light load currents, the inductor current can drop to zero
and become negative. In Burst Mode operation (available
only on channel 1), a current reversal comparator (I
)
REV
detects the negative inductor current and shuts off the bot-
tom power MOSFET, resulting in discontinuous operation
and increased efficiency. Both power MOSFETs will remain
off until the ITH voltage rises above the zero current level to
initiate another cycle. During this time, the output capacitor
supplies the load current and the part is placed into a low
currentsleepmode. BurstModeoperationisdisabledbyty-
ingtheMODE/SYNCpintoground,whichforcescontinuous
synchronous operation regardless of output load current.
Main Control Loop
In normal operation, the internal top power MOSFET is
turned on for a fixed interval determined by a one-shot
timer (ON signal in the Block Diagram). When the top
powerMOSFETturnsoff, thebottompowerMOSFETturns
on until the current comparator I
trips, thus restarting
CMP
the one-shot timer and initiating the next cycle. Inductor
current is measured by sensing the voltage drop across
the bottom power MOSFET. The voltage on the ITH pin sets
thecomparatorthresholdcorrespondingtoinductorvalley
current. The error amplifier EA adjusts this ITH voltage
Power Good Status Output
The PGOOD open-drain output will be pulled low if the
regulatoroutputexitsa 8%windowaroundtheregulation
point. This threshold has 15mV of hysteresis relative to
by comparing the feedback signal V (derived from the
FB
outputvoltage)toaninternal0.6Vreferencevoltage(chan-
nel 1) or the VTTR voltage (channel 2). If the load current
increases, it causes a drop in the feedback voltage relative
tothereferencevoltage. TheITHvoltagethenrisesuntilthe
average inductor current matches that of the load current.
the V pin. To prevent unwanted PGOOD glitches during
FB
transientsordynamicV changes,theLTC3634PGOOD
OUT
falling edge includes a filter time of approximately 40μs.
For the V output (channel 2), VTTR is the regulation
TT
point. The PGOOD2 pin will always be low when the VTTR
The switching frequency is determined by the value of the
output voltage is less than 300mV.
R resistor, which programs the current for the internal
T
oscillator. An internal phase-locked loop servos the one-
shot timer (ON signal) such that the internal oscillator
edge phase-locks to the SW node edge, thus forcing a
constant switching frequency. This unique controlled
on-time architecture also allows the switching frequency
to be synchronized to an external clock source when it
is applied to the MODE/SYNC pin. Channel 1 defaults to
forced continuous operation once the clock signal is ap-
plied(channel2isalwaysinforcedcontinuousoperation).
V Overvoltage Protection
IN
In order to protect the internal power MOSFET devices
against long transient voltage events, the LTC3634 con-
stantly monitors each V pin for an overvoltage condi-
IN
tion. When V rises above 17.5V, the regulator suspends
IN
operation by shutting off both power MOSFETs on the
corresponding channel. Once V drops below 16.5V, the
IN
regulator immediately resumes normal operation. The
regulator does not execute its soft-start function when
exiting an overvoltage condition.
VTTR Output Buffer
The VTTR pin outputs a voltage equal to one half of
VDDQIN. It is capable of sourcing/sinking 10mA and
driving capacitive loads up to 0.01µF. A small series
resistance (1Ω) between the output and the load further
increases the amount of capacitance that the amplifier can
Out-Of-Phase Operation
Tying the PHMODE pin high sets the SW2 falling edge to
be 180° out-of-phase with the SW1 falling edge. There is
3634fc
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For more information www.linear.com/LTC3034
LTC3634
OPERATION
capacitors and reduces the voltage noise on the supply
line.Onepotentialdisadvantagetothisconfigurationoccurs
when one channel is operating at 50% duty cycle. In this
situation, SW node transitions can potentially couple from
one channel to the other, resulting in frequency jitter on one
or both channels. This effect can be mitigated with a well
designed board layout. Alternatively, tying PHMODE low
changes the phase difference to be 90°, which may prevent
SW1 and SW2 from transitioning at the same point in time.
a significant advantage to running both channels out-of-
phase. When running the channels in phase, both topside
MOSFETs are on simultaneously, causing large current
pulses to be drawn from the input capacitor and supply
at the same time. When running the LTC3634 channels
out-of-phase, the large current pulses are interleaved,
effectively reducing the amount of time the pulses overlap.
Thus, the total RMS input current is decreased, which both
relaxes the capacitance requirements for the V bypass
IN
APPLICATIONS INFORMATION
AgeneralLTC3634applicationcircuitisshowninFigure1.
External component selection is largely driven by the load
requirement and switching frequency. Component selec-
tion typically begins with selecting the feedback resistors
to set the desired output voltage. Next the inductor L and
Programming Switching Frequency
Selectionoftheswitchingfrequencyisatrade-offbetween
efficiency and component size. High frequency operation
allows the use of smaller inductor and capacitor values.
Operation at lower frequencies improves efficiency by
reducinginternalgatechargelossesbutgenerallyrequires
larger inductance and capacitance values to maintain low
output ripple voltage. Connecting a resistor from the RT
pintoSGNDprogramstheswitchingfrequency(f)between
500kHz and 4MHz according to the following formula:
resistor R are selected. Once the inductor is chosen, the
T
input capacitor (C ) and the output capacitor (C ) can
IN
OUT
be selected. Finally, the loop compensation components
may be selected to stabilize the step-down regulator. The
remaining optional external components can then be se-
lectedforfunctionssuchasloopcompensation,TRACKSS,
3.2E11
V , UVLO, and PGOOD.
IN
RRT =
f
where R is in Ω and f is in Hz.
RT
V
IN
3.6V TO 15V
C1
V
V
IN1
IN2
RUN1
RUN2
RT
BOOST1
0.1µF
L1
LTC3634
SW1
V
ON1
VDDQIN
V
C
DDQ
INTV
CC
C2
2.2µF
R
RT
PHMODE
MODE/SYNC
R2
R1
OUT1
V
FB1
ITH1
BOOST2
SW2
0.1µF
C4
(OPT)
L2
R
COMP1
C
V
C
TT
V
COMP1
FB2
V
ON2
OUT2
ITH2
VTTR
V
REF
SGND PGND
C5
(OPT)
C3
R
COMP2
3634 F01
0.01µF
C
COMP2
Figure 1. Typical Application Circuit for DDR Memory Supply
3634fc
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For more information www.linear.com/LTC3034
LTC3634
APPLICATIONS INFORMATION
6000
The buffered output voltage on the VTTR pin is nominally
equaltohalfoftheVDDQINvoltage;thusconfiguringV
OUT2
5000
4000
3000
2000
1000
as a V bus termination supply for DDR memory is as
TT
simple as shorting V
directly to the V
to V and connecting VDDQIN
DDQ
OUT2
FB2
(the V
supply).
OUT1
Choosing large values for R1 and R2 will result in im-
proved zero-load efficiency but may lead to undesirable
noise coupling or phase margin reduction due to stray
capacitances at the V node. Care should be taken to
FB
0
route the V trace away from any noise source, such as
FB
0
100 200 300 400 500 600 700
R RESISTOR (kΩ)
T
the SW trace.
3634 F02
The LTC3634 controlled on-time architecture is optimized
for an output voltage range of 0.6V to 3V, which is suit-
able for powering DDR memory. The LTC3634 is capable
of regulating higher output voltages; however, controlled
on-time behavior is not ensured. When the output voltage
is greater than 3V, the step-down regulator is forced to
increasetheswitchingfrequencyinordertoachieveoutput
regulation. Furthermore,externalclocksynchronizationis
nolongerpossible,andchannel2cannotmaintain90°/180°
phase operation with respect to channel 1. In short, the
LTC3634 will behave like a constant on-time regulator
insteadofacontrolledon-timeregulator.Therefore,output
voltages greater than 3V should only be used in applica-
tions where switching frequency and channel-to-channel
phase-lockingarenotcriticalperformancecharacteristics.
Figure 2. Switching Frequency vs RT
When RT is tied to INTV , the switching frequency will
CC
default to approximately 2MHz, as set by an internal resis-
tor. This internal resistor is more sensitive to process and
temperature variations than an external resistor (see the
Typical Performance Characteristics section) and is best
usedforapplicationswhereswitchingfrequencyaccuracy
is not critical.
Output Voltage Programming
Each regulator’s output voltage is set by an external resis-
tive divider according to the following equation:
R2
R1
V
OUT = V
1+
FBREG
Inductor Selection
Foragiveninputandoutputvoltage,theinductorvalueand
operatingfrequencydeterminetheinductorripplecurrent.
More specifically, the inductor ripple current decreases
with higher inductor value or higher operating frequency
according to the following equation:
where V
is the reference voltage as specified in the
FBREG
Electrical Characteristics Table. The reference voltage is
600mV for channel 1; for channel 2 the reference voltage
is equal to the VTTR pin voltage. The desired output volt-
age is set by appropriate selection of resistors R1 and R2
as shown in Figure 3.
V
f•L
VOUT
OUT
∆I =
1−
L
V
V
OUT
IN
C
F
R2
R1
whereΔI =inductorripplecurrent,f=operatingfrequency
(OPTIONAL)
L
V
FB
and L = inductor value. A trade-off between component
size, efficiency and operating frequency can be seen from
LTC3634
SGND
this equation. Accepting larger values of ΔI allows the
L
3634 F03
useoflowervalueinductorsbutresultsingreaterinductor
Figure 3. Setting the Output Voltage
3634fc
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LTC3634
APPLICATIONS INFORMATION
Table 1. Inductor Selection Table
INDUCTANCE DCR MAX
(µH) (mΩ) CURRENT (A)
Würth Electronik WE-HC 744310 Series
core loss, greater ESR loss in the output capacitor, and
larger output voltage ripple. Generally, highest efficiency
operation is obtained at low operating frequency with
small ripple current.
DIMENSIONS
(mm)
HEIGHT
(mm)
0.24
0.55
0.95
1.15
2.00
2.1
3.8
18.0
14.0
11.0
8.5
7 × 7
3.3
A reasonable starting point is to choose a ripple current
somewhere between 600mA and 1.2A peak-to-peak. Note
that the largest ripple current occurs at the highest V .
Exceeding 1.8A is not recommended in order to minimize
outputvoltageripple.Toguaranteethatripplecurrentdoes
not exceed a specified maximum, the inductance should
be chosen according to:
6.4
9.0
14.0
6.5
IN
Vishay IHLP-2020BZ-01 Series
0.22
0.33
0.47
0.68
1
5.2
8.2
8.8
12.4
20
15
12
5.2 × 5.5
2
11.5
10
7
Toko FDV0620 Series
VOUT
f•∆IL(MAX)
VOUT
0.20
0.47
1.0
4.5
8.3
18.3
12.4
9.0
7 × 7.7
6 × 8.9
2.0
5.0
3.2
L =
1−
V
IN(MAX)
5.7
Coilcraft D01813H Series
0.33
0.56
1.2
4
10
7.7
5.3
Once the value for L is known, the type of inductor must
be selected. Actual core loss is independent of core size
for a fixed inductor value, but is very dependent on the
inductance selected. As the inductance increases, core
losses decrease. Unfortunately, increased inductance
requires more turns of wire, leading to increased DCR
and copper loss.
10
17
TDK RLF7030 Series
1.0
1.5
8.8
9.6
6.4
6.1
6.9 × 7.3
C and C
Selection
IN
OUT
Ferrite designs exhibit very low core loss and are pre-
ferred at high switching frequencies, so design goals
can concentrate on copper loss and preventing satura-
tion. Ferrite core material saturates “hard”, which means
that inductance collapses abruptly when the peak design
current is exceeded. This results in an abrupt increase in
inductor ripple current, so it is important to ensure that
the core will not saturate.
The input capacitance, C , is needed to filter the trapezoi-
IN
dal wave current at the drain of the top power MOSFET.
To prevent large voltage transients from occurring, a low
ESR input capacitor sized for the maximum RMS current
is recommended. The maximum RMS current for a single
regulator is given by:
VOUT V − V
(
)
IN
OUT
I
RMS = IOUT(MAX)
V
IN
Different core materials and shapes will change the size/
currentandprice/currentrelationshipofaninductor.Toroid
or shielded pot cores in ferrite or permalloy materials are
small and don’t radiate much energy, but generally cost
more than powdered iron core inductors with similar
characteristics. The choice of which style inductor to use
mainly depends on the price versus size requirements
and any radiated field/EMI requirements. Table 1 gives a
sampling of available surface mount inductors.
When both regulators are active, the input current wave-
formissignificantlydifferent. Furthermore,theinputRMS
current varies depending on each output’s load current as
well as whether V is sinking or sourcing current.
TT
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LTC3634
APPLICATIONS INFORMATION
mustinstantaneouslysupplythecurrenttosupporttheload
until the feedback loop raises the switch current enough
to support the load. The time required for the feedback
loop to respond is dependent on the compensation and
the output capacitor size. Typically, three to four cycles
are required to respond to a load step, but only in the first
cycle does the output drop linearly. The output droop,
WhenSW1andSW2operate180°out-of-phase,theworst-
case input RMS current occurs when the V supply is
TT
sinking current and V
is sourcing the same amount of
DDQ
current. Knowing that V
= one-half V
in the DDR
OUT2
OUT1
application, the input RMS current in this case is given by:
D1
I
I
RMS = IOUT(MAX) D1 1.5−
for D1 < 0.5
4
V
, is usually about three times the linear drop of
DROOP
the first cycle, provided the loop crossover frequency is
maximized. Thus, a good place to start is with the output
capacitor size of approximately:
3
4
RMS = IOUT(MAX) 1− D1 for D1 > 0.5
where D1 is the duty cycle of channel 1 (V
supply).
3•∆IOUT
f•VDROOP
DDQ
COUT
≈
These equations show that maximum I
occurs at
RMS
50% duty cycle (V = 2 • V
). This simple worst-case
OUT1
IN
Thoughthisequationprovidesagoodapproximation,more
capacitance may be required depending on the duty cycle
condition may be used for design as deviations in duty
cycle do not offer significant relief. Note that ripple current
ratings from capacitor manufacturers are often based on
only 2000 hours of life which makes it advisable to further
deratethecapacitor,orchooseacapacitorratedatahigher
temperature than required.
and load step requirements. The actual V
should be
DROOP
verified by applying a load step to the output.
Using Ceramic Input and Output Capacitors
Higher values, lower cost ceramic capacitors are available
in small case sizes. Their high ripple current, high voltage
ratingandlowESRmakethemidealforswitchingregulator
applications. However, due to the self-resonant and high-
Q characteristics of some types of ceramic capacitors,
care must be taken when these capacitors are used at
the input. When a ceramic capacitor is used at the input
and the power is supplied by a wall adapter through long
wires, a load step at the output can induce ringing at the
Several capacitors may also be paralleled to meet size or
height requirements in the design. For low input voltage
applications, sufficient bulk input capacitance is needed
to minimize transient effects during output load changes.
Even though the LTC3634 design includes an overvoltage
protection circuit, care must always be taken to ensure
input voltage transients do not pose an overvoltage haz-
ard to the part.
The selection of C
is determined by the effective series
OUT
V input. Atbest, thisringingcancoupletotheoutputand
IN
resistance(ESR)thatisrequiredtominimizevoltageripple
and load step transients as well as the amount of bulk
capacitance that is necessary to ensure that the control
loop is stable. Loop stability can be checked by viewing
be mistaken as loop instability. At worst, a sudden inrush
of current through the long wires can potentially cause a
voltage spike at V large enough to damage the part. For
IN
a more detailed discussion, refer to Application Note 88.
the load transient response. The output ripple, ΔV , is
OUT
When choosing the input and output ceramic capacitors,
choose the X5R and X7R dielectric formulations. These
dielectrics have the best temperature and voltage char-
acteristics of all the ceramics for a given value and size.
approximated by:
1
∆VOUT < ∆IL ESR+
8•f•C
OUT
When using low-ESR ceramic capacitors, it is more use-
ful to choose the output capacitor value to fulfill a charge
storage requirement. During a load step, the output capacitor
3634fc
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LTC3634
APPLICATIONS INFORMATION
Choosing Compensation Components
The first step is to choose the crossover frequency f .
C
Higher crossover frequencies will result in a faster loop
transient response; however, in order to avoid higher or-
der loop dynamics from the switching power stage, it is
Loop compensation is a complicated subject and Applica-
tion Note 76 is recommended reading for a full discussion
on maximizing loop bandwidth in a current mode switch-
ing regulator. This section will provide a quick method on
choosingpropercomponentstocompensatetheLTC3634
regulators.
recommended that f not exceed one-tenth the switching
C
frequency (f ).
SW
Once f is chosen, the value of R
that sets this cross-
COMP
C
overfrequencycanbecalculatedbythefollowingequation:
Figure 4 shows the recommended components to be con-
nected to the ITH pin, and Figure 5 shows an approximate
bode plot of the buck regulator loop using these compo-
nents. It is assumed that the major poles in the system
(the output capacitor pole and the error amplifier output
pole) are located at a frequency lower than the crossover
frequency.
2π •fC •COUT
VOUT
RCOMP
=
gm(EA) •gm(MOD) VFBREG
where g
is the error amplifier transconductance
m(EA)
(see the Electrical Characteristics section), and g
m(MOD)
is the modulator transconductance (the transfer function
from ITH voltage to current comparator threshold). For
–1
the LTC3634, this transconductance is nominally 7Ω .
ITH
R
Once R
is determined, C
can be chosen to set
COMP
COMP
COMP
LTC3634
C
BYP
the zero frequency (f ):
Z
C
COMP
SGND
1
fZ =
3634 F04
2π •CCOMP •RCOMP
Figure 4. Compensation and Filtering Components
For 90° of phase margin, f should be chosen to be less
Z
than one-tenth of f .
C
Since the ITH node is sensitive to noise coupling, a small
|H(s)|
bypass capacitor (C ) may be used to filter out board
BYP
–2
noise. However, this cap contributes a pole at f and may
P
introduce some phase loss at the crossover frequency:
1
fP =
2π •CBYP•RCOMP
–1
ƒ
P
0dB
For best results, f should be set high enough such that
LOG (ƒ)
P
ƒ
ƒ
C
Z
phase margin is not significantly affected.
3634 F05
If necessary, a capacitor C (as shown in Figure 3) may
F
Figure 5. Bode Plot of Regulator Loop
be used to add some phase lead.
3634fc
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LTC3634
APPLICATIONS INFORMATION
Checking Transient Response
Insomeapplications,amoreseveretransientcanbecaused
by switching in loads with large (>10μF) input capacitors.
Thedischargedinputcapacitorsareeffectivelyputinparal-
The regulator loop response can be checked by observing
the response of the system to a load step. The ITH pin not
only allows optimization of the control loop behavior but
also provides a DC-coupled and AC filtered closed loop
response test point. The DC step, rise time, and settling
behavioratthistestpointreflecttheclosedloopresponse.
Assuming a predominantly second order system, phase
margin and/or damping factor can be estimated using the
percentage of overshoot seen at this pin.
lel with C , causing a rapid drop in V . No regulator
OUT
OUT
can deliver enough current to prevent this problem, if the
switchconnectingtheloadhaslowresistanceandisdriven
quickly. The solution is to limit the turn-on speed of the
load switch driver. A Hot Swap™ controller is designed
specifically for this purpose and usually incorporates cur-
rent limiting, short-circuit protection, and soft-starting.
After choosing compensation values as discussed in the
previous section, the design should be tested to verify
stability. The component values may be modified slightly
to optimize transient response once the final PC layout is
done and the particular output capacitor type and value
have been determined. The output capacitors need to be
selectedbecausetheirvarioustypesandvaluesdetermine
the loop gain and phase. An output current pulse of 20%
to 100% of full load current having a rise time of ~1μs will
produce output voltage and ITH pin waveforms that will
give a sense of the overall loop stability without breaking
the feedback loop.
INTV Regulator Bypass Capacitor
CC
Aninternallowdropout(LDO)regulatorproducesthe3.3V
supply that powers the internal bias circuitry and drives
the gate of the internal MOSFET switches. The INTV pin
CC
connects to the output of this regulator and must have a
minimum of 1μF ceramic bypass capacitance to ground.
This capacitor should have low impedance electrical
connections to the INTV and PGND pins to provide the
CC
transient currents required by the LTC3634. This supply
is intended only to supply additional DC load currents as
desired and not intended to regulate large transient or AC
behavior, as this may impact LTC3634 operation.
Switching regulators take several cycles to respond to a
Boost Capacitor
step in load current. When a load step occurs, V
im-
OUT
•ESR,where
mediatelyshiftsbyanamountequaltoΔI
LOAD
The LTC3634 uses a bootstrap circuit to create a voltage
ESR is the effective series resistance of C . ΔI
also
OUT
LOAD
railabovetheappliedinputvoltageV .Specifically,aboost
IN
beginstochargeordischargeC ,generatingafeedback
OUT
capacitor, C
, is charged to a voltage approximately
equal to INTV each time the bottom power MOSFET is
BOOST
CC
error signal used by the regulator to return V
to its
can
OUT
steady-state value. During this recovery time, V
OUT
turned on. The charge on this capacitor is then used to
supplytherequiredtransientcurrentduringtheremainder
oftheswitchingcycle. WhenthetopMOSFETisturnedon,
be monitored for overshoot or ringing that would indicate
a stability problem.
the BOOST pin voltage will be equal to approximately V
When observing the response of V
to a load step, the
IN
OUT
+ 3.3V. For most applications, a 0.1μF ceramic capacitor
closely connected between the BOOST and SW pins will
provide adequate performance.
initialoutputvoltagestepmaynotbewithinthebandwidthof
thefeedbackloop,sothestandardsecondorderovershoot/
DC ratio cannot be used to determine phase margin. The
output voltage settling behavior is related to the stability
of the closed-loop system and will demonstrate the actual
overall supply performance. For a detailed explanation of
optimizing the compensation components, including a
review of control loop theory, refer to Application Note 76.
3634fc
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LTC3634
APPLICATIONS INFORMATION
Minimum Off-Time/On-Time Considerations
MODE/SYNC Operation
The MODE/SYNC pin is a multipurpose pin allowing both
mode selection and operating frequency synchronization.
The minimum off-time is the smallest amount of time that
the LTC3634 can turn on the bottom power MOSFET, trip
the current comparator and turn the power MOSFET back
off. This time is typically 40ns. For the controlled on-time
control architecture, the minimum off-time limit imposes
a maximum duty cycle of:
Floating this pin or connecting it to INTV enables Burst
CC
Mode operation on channel 1 for superior efficiency at
light load currents at the expense of slightly higher out-
put voltage ripple. When the MODE/SYNC pin is tied to
ground, forced continuous mode operation is selected,
creating the lowest fixed output ripple at the expense of
light load efficiency.
DC
= 1– f • (t
+ 2 • t
)
MAX
OFF(MIN)
DEAD
wherefistheswitchingfrequency, t
isthenonoverlap
DEAD
time of the switches, or dead time (typically 15ns), and
is the minimum off-time. If the maximum duty
The LTC3634 will detect the presence of the external
clock signal on the MODE/SYNC pin and synchronize the
internal oscillator to the phase and frequency of the in-
coming clock. The presence of an external clock will place
both regulators into forced continuous mode operation.
t
OFF(MIN)
cycle is surpassed, due to a decreasing input voltage
for example, the output will drop out of regulation. The
minimum input voltage to avoid this dropout condition is:
VOUT
Although the R resistor is not strictly necessary when
T
VIN(MIN)
=
synchronizing to an external clock, it is recommended to
1− f• t
+2•tDEAD
(
)
OFF(MIN)
use a R resistor that matches the nominal external clock
T
Conversely, the minimum on-time is the smallest dura-
tion of time in which the top power MOSFET can be in
its ON state. This time is typically 20ns. In continuous
mode operation, the minimum on-time limit imposes a
minimum duty cycle of:
frequency in order to keep the switching regulator biased
correctly whenever the external clock signal is suddenly
removed or reapplied.
Channel 1 Output Voltage Tracking and Soft-Start
The LTC3634 allows the user to control the output voltage
ramp rate of channel 1 by means of the TRACKSS pin.
From 0 to 0.6V, the TRACKSS voltage will override the
internal 0.6V reference input to the error amplifier, thus
regulating the feedback voltage to that of the TRACKSS
pin. When TRACKSS is above 0.6V, tracking is disabled
and the feedback voltage will regulate to the internal
reference voltage.
DC
= (f • t
)
MIN
ON(MIN)
where t
is the minimum on-time. As the equation
ON(MIN)
shows, reducing the operating frequency will alleviate the
minimum duty cycle constraint.
When the regulator output is sinking current, the effective
minimumon-timeoftheconverterwillbeincreasedbythe
non-overlap time of the power MOSFETs (or the “dead-
time”) during each SW node transition. This “dead-time”
is nominally 15ns, so when sinking current, the minimum
on-time is effectively 15ns + 15ns + 20ns = 50ns.
The voltage at the TRACKSS pin may be driven from an
external source, or alternatively, the user may leverage
the internal 1.4μA pull-up current source to implement
a soft-start function by connecting an external capacitor
Iftheminimumon-timeconstraintisviolated,theconverter
will automatically reduce its own switching frequency in
order to maintain output regulation. Once the converter
reduces its switching frequency, the phase information
is lost and the two channels will switch asynchronously.
(C ) from the TRACKSS pin to ground. The relationship
SS
between output rise time and TRACKSS capacitance is
given by:
t
SS
= 430000Ω • C
SS
Furthermore, the regulator may need to be compensated
moreconservativelyduetothelowerswitchingfrequency.
3634fc
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LTC3634
APPLICATIONS INFORMATION
ficientvoltagetodischargetheinductorincontinuousmode
and prevent excessive build-up of energy in the inductor.
A default internal soft-start ramp forces a minimum soft-
start time of 400μs by overriding the TRACKSS pin input
during this time period. Hence, capacitance values less
than approximately 1000pF will not significantly affect
soft-start behavior.
Output Power Good
The PGOOD output of the LTC3634 is driven by a 15Ω
(typical) open-drain pull-down device. If the output volt-
age exits an 8% (typical) regulation window around the
targetregulationpoint,theopen-drainoutputwillpulldown
with 15Ω output resistance to ground, thus dropping the
PGOOD pin voltage. This pull-down device will not shut
off until the output re-enters this window and overcomes
a small amount of hysteresis. This behavior is described
in Figure 6.
Start-Up Behavior
Upon start-up, both channels immediately default to
discontinuous operation. Channel 1 will remain in dis-
continuous Burst Mode operation until its output rises to
greater than 80% of its final value (V > 480mV). Once
FB
the output exceeds this voltage, the operating mode of
the regulator switches to the mode selected by the MODE/
SYNC pin as described above. During normal operation,
if the output drops below 10% of its final value (as it may
when tracking down, for instance), the regulator will
automatically switch to Burst Mode operation to prevent
inductor saturation and improve TRACKSS pin accuracy.
A filter time of 40μs (typical) acts to prevent unwanted
PGOOD output changes during V
transient events. As
OUT
a result, the output voltage must exit the 8% regulation
window for 40μs before the PGOOD pin pulls to ground.
Conversely, the output voltage must be within the target
regulation window for 40μs before the PGOOD pin pulls
high.
Channel 2 (the V termination supply) remains in discon-
TT
tinuous operation until its output rises above 300mV, at
whichpointitwillautomaticallyswitchtoforcedcontinuous
operation. This ensures that the regulator output has suf-
NOMINAL OUTPUT
V
V
: 2.5%
HYS(CH1)
15mV
:
• 100%
V
V
HYS
HYS(CH2)
HYS
VTTR
PGOOD
VOLTAGE
–8%
0%
8%
OUTPUT VOLTAGE
3634 F06
Figure 6. PGOOD Pin Behavior
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LTC3634
APPLICATIONS INFORMATION
2-Phase, Single V Output Configuration
V
and V may be powered from separate supply volt-
IN1 IN2
TT
ages (see Figure 12). This is useful in cases where power
needs to be shared between two different sources. It is
The two regulators on the LTC3634 can be easily com-
bined to provide a single 2-phase V termination supply
TT
important to note that when the V output sinks current,
TT
capable of sourcing and sinking up to 6A. The circuit is
shown in Figure 7.
it will backfeed through the converter and out of the V
IN
pins. Care must be taken to ensure that the input supplies
In this circuit, V is tied to INTV to put the LTC3634
are able to handle this condition.
FB1
CC
into2-phaseoperation.Whensetupfor2-phaseoperation,
the inputs to channel 1’s transconductance error amplifier
Efficiency Considerations
are switched to be the same as channel 2’s inputs (V
FB2
The percent efficiency of a switching regulator is equal to
the output power divided by the input power times 100%.
It is often useful to analyze individual losses to determine
what is limiting the efficiency and which change would
produce the most improvement. Percent efficiency can
be expressed as:
and VTTR), allowing it to be paralleled with channel 2’s
error amplifier. The ITH1 and ITH2 pins should be tied
together externally to force equal current sharing between
both channels.
Only one compensation network is needed on the ITH
node, although separate filter caps for each ITH pin may
be helpful depending on the board layout. In this parallel
% Efficiency = 100% – (L1 + L2 + L3 +…)
whereL1, L2, etc. aretheindividuallossesasapercentage
of input power. Although all dissipative elements in the
circuitproducelosses,threemainsourcesusuallyaccount
for most of the losses in LTC3634 circuits: 1) conduction
losses, 2) switching losses and quiescent power loss 3)
transition losses and other losses.
configuration,itisimportanttonotethattheeffectiveg
m(EA)
and g
are twice as large as that of a single channel.
m(MOD)
One advantage to this 2-phase configuration is that both
input and output current ripple is significantly reduced
comparedtoasinglephase6Aconvertersolution,because
thecurrentwaveformsfromeachregulatorareinterleaved.
Refer to Application Note 77 for a full discussion and
analysis on PolyPhase® converters.
V
IN
3.6V TO 15V
C1
V
V
IN1
47µF
×2
IN2
RUN1
RUN2
RT
BOOST1
L1
0.1µF
0.47µH
LTC3634
V
V
TT
DDQ
SW1
BOOST2
/2 AT 6A
INTV
PHMODE
CC
L2
0.47µH
R1
160k
C2
2.2µF
0.1µF
V
SW2
FB1
V
FB2
V
DDQ
C
OUT2
VDDQIN
ITH1
V
V
ON2
ON1
SUPPLY
100µF
×4
10pF
6k
1000pF
VTTR
V
V
REF
DDQ
/2 AT 10ꢀA
0.01µF
ITH2
MODE/SYNC
SGND PGND
10pF
3634 F07
Figure 7. Application Circuit for a 2-Phase, 6A Single VTT Output
3634fc
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LTC3634
APPLICATIONS INFORMATION
1. Conduction losses are calculated from the DC resis-
Thermal Considerations
tances of the internal switches, R , and external
SW
The LTC3634 requires the exposed package back-plane
metal (PGND) to be well soldered to the PC board to
provide good thermal contact. This gives the QFN and
TSSOP packages exceptional thermal properties, which
are necessary to prevent excessive self-heating of the part
in normal operation.
inductor, R . In continuous mode, the average output
L
current flows through inductor L but is “chopped”
between the internal top and bottom power MOSFETs.
Thus, the series resistance looking into the SW pin is a
function of both top and bottom MOSFET R
the duty cycle (DC) as follows:
and
DS(ON)
In a majority of applications, the LTC3634 does not dis-
sipatemuchheatduetoitshighefficiencyandlowthermal
resistance of its exposed-back QFN package. However, in
applications where the LTC3634 is running at high ambi-
R
= (R
)(DC) + (R
)(1 – DC)
SW
DS(ON)TOP
DS(ON)BOT
TheR
forboththetopandbottomMOSFETscanbe
DS(ON)
obtained from the Typical Performance Characteristics
curves. So to calculate conduction losses:
ent temperature, high V , high switching frequency, and
IN
maximum output current load, the heat dissipated may
exceed the maximum junction temperature of the part. If
the junction temperature reaches approximately 170°C,
bothpowerswitcheswillbeturnedoffuntilthetemperature
returns to 160°C.
2
Conduction Loss = I
(R + R )
SW L
OUT
2. The internal LDO supplies the power to the INTV rail.
CC
The total power loss here is the sum of the switching
losses and quiescent current losses from the control
circuitry.
To prevent the LTC3634 from exceeding the maximum
junction temperature of 125°C, the user will need to do
some thermal analysis. The goal of the thermal analysis
is to determine whether the power dissipated exceeds the
maximum junction temperature of the part. The tempera-
ture rise is given by:
Each time a power MOSFET gate is switched from low
to high to low again, a packet of charge dQ moves from
V
to ground. The resulting dQ/dt is a current out of
IN
INTV that is typically much larger than the DC control
CC
bias current. In continuous mode, I
= f • (Q +
GATECHG
T
Q ),whereQ andQ arethegatechargesoftheinternal
B
T
B
T
RISE
= P • θ
D JA
top and bottom power MOSFETs and f is the switching
frequency. For estimation purposes, (Q + Q ) on each
As an example, consider the case when the LTC3634 is
used to power DDR2 SDRAM and is used in an application
T
B
LTC3634 regulator channel is approximately 2.3nC.
where maximum ambient temperature is 70°C, V = 12V,
IN
To calculate the total power loss from the LDO load,
simply add the gate charge current and quiescent cur-
frequency = 1MHz, V
= 1.8V, V = 0.9V, and I
=
DDQ
TT
LOAD
2A for both channels.
rent and multiply by V :
IN
From the R graphs in the Typical Performance
DS(ON)
P
= (I
+ I ) • V
LDO
GATECHG Q IN
Characteristics section, the top switch on-resistance is
3.Otherhiddenlossessuchastransitionloss,coppertrace
resistances, and internal load currents can account for
additional efficiency degradations in the overall power
system. Transition loss arises from the brief amount of
time the top power MOSFET spends in the saturated
region during switch node transitions. The LTC3634
internalpowerdevicesswitchquicklyenoughthatthese
losses are not significant compared to other sources.
Other losses, including diode conduction losses during
dead-time and inductor core losses, generally account
for less than 2% total additional loss.
nominally 140mΩ and the bottom switch on-resistance
is nominally 75mΩ at 70°C ambient. For the V
supply,
DDQ
the equivalent power MOSFET resistance R
is:
SW1
1.8V
12V
10.2V
12V
RDS(ON)TOP
•
+RDS(ON)BOT
•
= 84.8mΩ
The same calculation to the V supply (0.9V), yields
TT
R
SW2
= 79.9mΩ.
From the previous section’s discussion on gate drive, we
estimate the total gate charge current for each regulator to
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APPLICATIONS INFORMATION
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
be 1MHz • 2.3nC = 2.3mA, and the total I of both chan-
Q
nels is 1.3mA (see the Electrical Characteristics section).
Therefore,thetotalpowerdissipatedbybothregulatorsis:
P = I
2 •R
+ I
2 •R
(
)
(
)
D
OUT1
OUT2
SW1
SW2
+ V • IGATECHG +IQ
(
)
IN
CH2 LOAD = 0A
CH2 LOAD = 1A
CH2 LOAD = 2A
CH2 LOAD = 3A
PD =(2A)2 •0.0848Ω+(2A)2 •0.0799Ω
+12V • 2.3mA •2 +1.3mA = 0.730W
(
)
0
25
50
75
100
125
MAXIMUM ALLOWABLE AMBIENT
TheQFN4mm×5mmpackagejunction-to-ambientthermal
TEMPERATURE (°C)
3634 F08
resistance, θ , is around 43°C/W. Therefore, the junction
JA
Figure 8. Temperature Derating Curve for DC1708 Demo Circuit
temperature of the regulator operating in a 70°C ambient
temperature is approximately:
temperature directly is to use the internal junction diode
on one of the PGOOD pins to measure its diode voltage
change based on ambient temperature change.
T = 0.730W • 43°C/W + 70°C = 101°C
J
which is below the maximum junction temperature of
125°C. With higher ambient temperatures, a heat sink or
cooling fan should be considered to drop the junction-to-
ambientthermalresistance.Alternatively,theexposedpad
TSSOP package may be a better choice for high power
applications, since it has better thermal properties than
the QFN package.
FirstremoveanyexternalpassivecomponentonthePGOOD
pin, then pull out 100μA from the PGOOD pin to turn on
its internal junction diode and bias the PGOOD pin to a
negativevoltage.Withnooutputcurrentload,measurethe
PGOOD voltage at an ambient temperature of 25°C, 75°C
and 125°C to establish a slope relationship between the
voltage on PGOOD and ambient temperature. Once this
slopeisestablished,thenthejunctiontemperaturerisecan
be measured as a function of power loss in the package
with corresponding output load current. Although making
this measurement with this method does violate absolute
maximum voltage ratings on the PGOOD pin, the applied
power is so low that there should be no significant risk
of damaging the device.
Remembering that the above junction temperature is ob-
tained from a R
at 70°C, we might recalculate the
DS(ON)
junction temperature based on a higher R
since it
DS(ON)
increases with temperature. Redoing the calculation as-
suming that R increased 12% at 101°C yields a new
SW
junction temperature of 105°C.
Figure 8 is a temperature derating curve based on the
DC1708 demo board (QFN package). It can be used as
a guideline to estimate the maximum allowable ambient
temperature for given DC load currents in order to avoid
exceeding the maximum operating junction temperature
of 125°C.
Board Layout Considerations
When laying out the printed circuit board, the following
checklist should be used to ensure proper operation of
the LTC3634. Check the following in your layout:
Junction Temperature Measurement
1. Do the input capacitors connect to the V and PGND
IN
pins as close as possible? These capacitors provide
the AC current to the internal power MOSFETs and their
drivers.
The junction-to-ambient thermal resistance will vary de-
pending on the size and amount of heat sinking copper
on the PCB board where the part is mounted, as well as
the amount of air flow on the device. In order to properly
evaluate this thermal resistance, the junction temperature
needstobemeasured.Acleverwaytomeasurethejunction
2. The output capacitor, C , and inductor L should be
OUT
closely connected to minimize loss. The (–) plate of
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LTC3634
APPLICATIONS INFORMATION
C
should be closely connected to both PGND and
Next, select values for R1 and R2 to set channel 1 (V
to be 1.8V for DDR2 SDRAM. Choosing R1 to be 12.1k,
R2 is calculated to be:
)
OUT
DDQ
the (–) plate of C .
IN
3. The resistive divider, (e.g. R1 and R2 in Figure 1) must
be connected between the (+) plate of C
and a
1.8V
0.6V
OUT
R2=12.1k •
−1 = 24.2k
groundlineterminatednearSGND. Thefeedbacksignal
V
should be routed away from noisy components
FB
and traces, such as the SW line, and its trace length
The closest standard value is 24.3k. Tying VDDQIN to
sets V to be half of V
should be minimized. In addition, the R resistor and
loop compensation components should be terminated
V
OUT1
.
OUT1
T
OUT2
Next, we can pick inductor values for both the V
TT
and
DDQ
to SGND.
V
outputs. Choosing inductor current ripple to be 1A
4. Keep sensitive components away from the SW pin. The
at maximum V :
IN
R resistor,thecompensationcomponents,thefeedback
T
1.8V
1MHz •1A
1.8V
13.2V
resistors, and the INTV bypass capacitor should all
CC
L1=
L2=
1−
=1.55µH
be routed away from the SW trace and the inductor L.
5. A ground plane is preferred, but if not available, the
signal and power grounds should be segregated with
bothconnectingtoacommon,lownoisereferencepoint.
The connection to the PGND pin should be made with
a minimal resistance trace from the reference point.
0.9V
0.9V
13.2V
1−
= 0.838µH
1MHz •1A
Standard values of 1.5μH and 0.82µH should be used.
Ceramic caps will be used for C and will be selected
OUT
based on the charge storage requirement. Assuming a
worst case 4A load step (–2A to 2A):
6. Flood all unused areas on all layers with copper in order
to reduce the temperature rise of power components.
Thesecopperareasshouldbeconnectedtotheexposed
backside of the package (PGND). Refer to Figures 10
and 11 for board layout examples.
3•4A
1MHz •60mV
COUT1
≈
≈
= 200µF
= 400µF
3•4A
1MHz •30mV
COUT2
Design Example
As a design example, consider using the LTC3634 (as
shown in Figure 1) to power DDR2 SDRAM with the fol-
Lastly,wewillchoosecompensationcomponents.Choos-
ing the crossover frequency f = 50kHz:
C
lowing specifications: V
f = 1MHz, V
= 13.2V, I
= 2A,
IN(MAX)
OUT(MAX)
< 60mV, V
) < 30mV.
DROOP(VTT
DROOP(VDDQ)
2π •50kHz •200µF 1.8V
RCOMP1
=
= 27kΩ
=18kΩ
The following discussion will use equations from the
previous sections.
1mΩ−1 •7Ω−1
0.6V
2π •50kHz •400µF 0.9V
First, the correct R resistor value for 1MHz switching
T
RCOMP2
=
1mΩ−1 •7Ω−1
frequency must be chosen. Based on previous discus-
0.9V
sions, R is calculated to be
T
Choosing the zero frequency to be 10kHz yields C
=
COMP1
11
3.2E
f
589pF and C
= 884pF. The closest standard values
COMP2
RT =
= 320kΩ
for the compensation components are 26.7k, 18k, 560pF
and 910pF, respectively.
The closest standard value is 324k.
The final circuit is shown in Figure 9.
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APPLICATIONS INFORMATION
V
IN
3.6V TO 15V
C1
V
V
IN1
47µF
×2
IN2
RUN1
RUN2
RT
BOOST1
SW1
L1
1.5µH
0.1µF
V
DDQ
LTC3634
1.8V
INTV
PHMODE
MODE/SYNC
V
ON1
VDDQIN
CC
R3
324k
C2
2.2µF
C
OUT1
100µF
V
FB1
×2
R1
12.1k
R2
24.3k
ITH1
BOOST2
R
COMP1
C4
10pF
L2
26.7k
0.82µH
0.1µF
V
C
TT
COMP1
SW2
0.9V
560pF
V
FB2
C
ITH2
V
ON2
VTTR
OUT2
V
100µF
REF
C5
10pF
R
0.9V
0.01µF
COMP2
×4
SGND PGND
18k
3634 F09
C
COMP2
910pF
Figure 9. Design Example Circuit
VIA TO BOOST1 VIA TO V /R2 (NOT SHOWN)
ON1
V
OUT1
C
VIA TO V
AND R2 (NOT SHOWN)
ON1
OUT1
L1
C
OUT1
GND
V
OUT1
VIAS TO GROUND
PLANE
VIAS TO GROUND
PLANE
SW1
C
C
BOOST1
GND
C
C
IN
L1
VIAS TO GROUND
PLANE
C
C
IN
VIA TO BOOST1
V
IN
SW1
VIAS TO GROUND
PLANE
SGND (TO NONPOWER
COMPONENTS)
C
C
BOOST1
BOOST2
V
IN
SGND (TO NONPOWER
COMPONENTS)
SW2
L2
IN
BOOST2
VIA TO BOOST2
SW2
IN
GND
VIAS TO GROUND
PLANE
GND
L2
VIAS TO GROUND
PLANE
C
OUT2
V
OUT2
C
OUT2
V
OUT2
3634 F11
3634 F10
VIA TO V
AND V
(NOT SHOWN)
ON2
FB2
VIA TO BOOST2
VIA TO V
AND V
(NOT SHOWN)
ON2
FB2
Figure 10. Example of Power Component Layout
for QFN Package
Figure 11. Example of Power Component Layout
for TSSOP Package
3634fc
24
For more information www.linear.com/LTC3034
LTC3634
PACKAGE DESCRIPTION
Please refer to http://www.linear.com/product/LTC3634#packaging for the most recent package drawings.
UFD Package
28-Lead Plastic QFN (4mm × 5mm)
(Reference LTC DWG # 05-08-1712 Rev B)
0.70 ±0.05
4.50 ±0.05
3.10 ±0.05
2.50 REF
2.65 ±0.05
3.65 ±0.05
PACKAGE OUTLINE
0.25 ±0.05
0.50 BSC
3.50 REF
4.10 ±0.05
5.50 ±0.05
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED
PIN 1 NOTCH
R = 0.20 OR 0.35
× 45° CHAMFER
2.50 REF
R = 0.115
TYP
R = 0.05
TYP
0.75 ±0.05
4.00 ±0.10
(2 SIDES)
27
28
0.40 ±0.10
PIN 1
TOP MARK
(NOTE 6)
1
2
5.00 ±0.10
(2 SIDES)
3.50 REF
3.65 ±0.10
2.65 ±0.10
(UFD28) QFN 0506 REV B
0.25 ±0.05
0.50 BSC
BOTTOM VIEW—EXPOSED PAD
0.200 REF
0.00 – 0.05
NOTE:
1. DRAWING PROPOSED TO BE MADE A JEDEC PACKAGE OUTLINE MO-220 VARIATION (WXXX-X).
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
3634fc
25
For more information www.linear.com/LTC3034
LTC3634
PACKAGE DESCRIPTION
Please refer to http://www.linear.com/product/LTC3634#packaging for the most recent package drawings.
FE Package
28-Lead Plastic TSSOP (4.4mm)
(Reference LTC DWG # 05-08-1663 Rev J)
Exposed Pad Variation EB
9.60 – 9.80*
(.378 – .386)
4.75
(.187)
4.75
(.187)
28 27 26 2524 23 22 21 20 1918 17 16 15
2.74
(.108)
EXPOSED
PAD HEAT SINK
ON BOTTOM OF
PACKAGE
6.60 ±0.10
4.50 ±0.10
SEE NOTE 4
6.40
(.252)
BSC
2.74
(.108)
0.45 ±0.05
1.05 ±0.10
0.65 BSC
RECOMMENDED SOLDER PAD LAYOUT
5
7
1
2
3
4
6
8
9 10 12 13 14
11
1.20
(.047)
MAX
4.30 – 4.50*
(.169 – .177)
0.25
REF
0° – 8°
0.65
(.0256)
BSC
0.09 – 0.20
(.0035 – .0079)
0.50 – 0.75
(.020 – .030)
0.05 – 0.15
(.002 – .006)
FE28 (EB) TSSOP REV J 1012
0.195 – 0.30
(.0077 – .0118)
TYP
NOTE:
1. CONTROLLING DIMENSION: MILLIMETERS 4. RECOMMENDED MINIMUM PCB METAL SIZE
2. DIMENSIONS ARE IN
FOR EXPOSED PAD ATTACHMENT
MILLIMETERS
(INCHES)
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.150mm (.006") PER SIDE
3. DRAWING NOT TO SCALE
3634fc
26
For more information www.linear.com/LTC3034
LTC3634
REVISION HISTORY
REV
DATE
DESCRIPTION
PAGE NUMBER
A
09/13 Clarified Absolute Maximum Ratings, added H and MP grades to Order Information.
2
Clarified parametric data.
Clarified graphs.
3, 4
5, 6
7, 8
18
Clarified RUN1, RUN2 pin function, INTV
Clarified minimum on-time description.
.
CC
Clarified maximum junction temperature in Thermal Considerations.
Clarified Related Parts, added LTC3786 and LTC3633A.
12/13 Clarified dead-time from 10ns to 15ns.
21
28
B
C
18
01/16 Added package option for mini reels
Expanded VTTR pin description
2
9
11
Expanded description in VTTR Output Buffer
3634fc
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
27
LTC3634
TYPICAL APPLICATION
V
IN
12V
5V
3.6V TO
15V
C6
22µF
C1
22µF
C3
47µF
C1
22µF
V
V
IN2
V
IN1
V
IN1
IN2
RUN1
RUN2
RT
BOOST1
RUN1
RUN2
RT
BOOST1
SW1
L1
L1
0.1µF
0.1µF
0.1µF
1.5µH
1µH
V
V
TT
DDQ
AT 6A
LTC3634
LTC3634
SW1
BOOST2
V
DDQ
/2
R1
1.5V
INTV
INTV
V
ON1
CC
CC
L2
1.5µH
R
T
324k
C2
2.2µF
R2
18.2k
C
OUT1
PHMODE
PHMODE
VDDQIN
162k
C2
2.2µF
100µF
×2
V
FB1
SW2
MODE/SYNC
ITH1
V
FB1
R1
12.1k
V
FB2
C
V
OUT2
DDQ
SUPPLY
VDDQIN
ITH1
V
ON2
V
ON1
BOOST2
100µF
×4
L2
0.47µH
R
COMP1
C4
10pF
0.1µF
C3
26.4k
SW2
V
TT
10k
10pF
10pF
C
COMP1
0.75V
V
FB2
560pF
V
680pF
REF
C
VTTR
MODE/SYNC
SGND PGND
V
ON2
OUT2
V
/2
DDQ
AT 10ꢀA
100µF
×4
ITH2
ITH2
VTTR
0.01µF
V
REF
SGND PGND
R
C5
10pF
COMP2
3634 TA02b
3634 TA02a
18k
0.01µF
C
COMP2
910pF
Figure 12a. VTT Powered from VDDQ
Figure 12b. 2-Phase VTT Termination Using Two Input Supplies
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
95% Efficiency, V
LTC3633
LTC3605
LTC3604
LTC3603
LTC3601
LTC3413
LTC3612
LTC3614
LTC3616
LTC3615
LTC3876
LTC3633A
15V, Dual 3A (I ), 4MHz, Synchronous Step-Down
= 3.6V, V
= 15V, V
= 0.6V,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
DC/DC Converter
I = 500µA, I <15µA, 4mm × 5mm QFN-28, TSSOP-28E Package
Q SD
15V, 5A (I ), 4MHz, Synchronous Step-Down
95% Efficiency, V
= 4V, V
= 15V, V
= 0.6V,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
DC/DC Converter
I = 2mA, I <15µA, 4mm × 4mm QFN-24 Package
Q SD
15V, 2.5A (I ), 4MHz, Synchronous Step-Down
95% Efficiency, V
= 3.6V, V
= 15V, V
= 0.6V,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
DC/DC Converter
I = 300µA, I <15µA, 4mm × 4mm QFN-20, MSOP-16E Package
Q SD
15V, 2.5A (I ), 3MHz, Synchronous Step-Down
95% Efficiency, V
= 4.5V, V
= 15V, V
= 0.6V,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
DC/DC Converter
I = 75µA, I <1µA, 4mm × 4mm QFN-20 MSOP-16E Package
Q SD
15V, 1.5A (I ), 4MHz, Synchronous Step-Down
95% Efficiency, V
= 4V, V
= 15V, V
= 0.6V,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
DC/DC Converter
I = 300µA, I <15µA, 4mm × 4mm QFN-20, MSOP-16E Package
Q SD
5.5V, 3A (I
Sink/Source), 2MHz, Monolithic Synchronous 90% Efficiency, V
= 2.25V, V
= 5.5V, V
= V /2,
OUT
IN(MIN)
IN(MAX)
OUT(MIN)
REF
Regulator for DDR/QDR Memory Termination
I = 280µA, I <1µA, TSSOP16E Package
Q SD
5.5V, 3A, 4MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V
= 2.25V, V
= 5.5V, V
= 0.6V,
IN(MIN)
IN(MAX)
OUT(MIN)
I = 75µA, I <1µA, 3mm × 4mm QFN-20 TSSOP-20E Package
Q
SD
5.5V, 4A, 4MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V
= 2.25V, V
= 5.5V, V
= 0.6V,
= 0.6V,
= 0.6V,
IN(MIN)
IN(MAX)
OUT(MIN)
OUT(MIN)
OUT(MIN)
I = 75µA, I <1µA, 3mm × 5mm QFN-24 Package
Q
SD
5.5V, 6A, 4MHz, Synchronous Step-Down DC/DC Converter 95% Efficiency, V
= 2.25V, V
= 5.5V, V
IN(MAX)
IN(MIN)
I = 75µA, I <1µA, 3mm × 5mm QFN-24 Package
Q
SD
5.5V, Dual 3A, 4MHz, Synchronous Step-Down
DC/DC Converter
95% Efficiency, V
= 2.25V, V
= 5.5V, V
IN(MIN)
IN(MAX)
I = 130µA, I <1µA, 4mm × 4mm QFN-24 TSSOP-24E Package
Q
SD
38V Dual DC/DC Controller for DDR Power with
95% Efficiency, V
= 4.5V, V
= 38V, V
= 1V to 2.5V,
IN(MIN)
IN(MAX)
PPQ
V
Reference
V
= 1/2 V , 5mm × 7mm QFN-38, TSSOP-38
TT PPQ
TT
20V, Dual 3A (I ), 4MHz, Synchronous Step-Down
95% Efficiency, V
= 3.6V, V
= 20V, I = 500µA, I <15µA,
IN(MAX) Q SD
OUT
IN(MIN)
DC/DC Converter
4mm × 5mm QFN-28, TSSOP-28E Package
3634fc
LT 0116 REV C • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
28
●
●
LINEAR TECHNOLOGY CORPORATION 2011
(408)432-1900 FAX: (408) 434-0507 www.linear.com/LTC3634
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