LTC4412IS6#TRM [Linear]
IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6, 1 MM HEIGHT, PLASTIC, MO-193, TSOT-23, 6 PIN, Power Management Circuit;
| 型号： | LTC4412IS6#TRM |
| 厂家： | 
Linear |
| 描述： | IC 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6, 1 MM HEIGHT, PLASTIC, MO-193, TSOT-23, 6 PIN, Power Management Circuit 光电二极管 |
| 文件： | 总12页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC4412
Low Loss PowerPathTM
Controller in ThinSOT
U
FEATURES
DESCRIPTIO
The LTC®4412 controls an external P-channel MOSFET to
create a near ideal diode function for power switchover or
load sharing. This permits highly efficient OR’ing of mul-
tiple power sources for extended battery life and low self-
heating. When conducting, the voltage drop across the
MOSFET is typically 20mV. For applications with a wall
adapter or other auxiliary power source, the load is auto-
maticallydisconnectedfromthebatterywhentheauxiliary
source is connected. Two or more LTC4412s may be
interconnected to allow load sharing between multiple
batteries or charging of multiple batteries from a single
charger.
■
Very Low Loss Replacement for Power Supply
OR’ing Diodes
■
Minimal External Components
■
Automatic Switching Between DC Sources
■
Simplifies Load Sharing with Multiple Batteries
■
Low Quiescent Current: 11μA
■
3V to 28V AC/DC Adapter Voltage Range
■
2.5V to 28V Battery Voltage Range
■
Reverse Battery Protection
■
Drives Almost Any Size MOSFET for Wide Range of
Current Requirements
■
MOSFET Gate Protection Clamp
■
Manual Control Input
The wide supply operating range supports operation from
one to six Li-Ion cells in series. The low quiescent current
(11μA typical) is independent of the load current. The gate
driver includes an internal voltage clamp for MOSFET
protection.
Low Profile (1mm) ThinSOTTM Package
■
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APPLICATIO S
■
Cellular Phones
The STAT pin can be used to enable an auxiliary P-channel
MOSFET power switch when an auxiliary supply is
detected. This pin may also be used to indicate to a
microcontroller that an auxiliary supply is connected. The
control (CTL) input enables the user to force the primary
MOSFET off and the STAT pin low.
■
Notebook and Handheld Computers
■
Digital Cameras
USB-Powered Peripherals
Uninterruptable Power Supplies
Logic Controlled Power Switch
■
■
■
, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
PowerPath and ThinSOT are trademarks of Linear Technology Corporation.
The LTC4412 is available in a low profile (1mm) ThinSOT
package.
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LTC4412 vs Schottky Diode
TYPICAL APPLICATIO
Forward Voltage Drop
1
1N5819
WALL
CONSTANT
ADAPTER
R
ON
INPUT
FDN306P
TO LOAD
BATTERY
CELL(S)
C
OUT
LTC4412
SENSE
LTC4412
1
2
3
6
5
4
V
CC
V
IN
GND GATE
CTL STAT
470k
CONSTANT
VOLTAGE
STATUS OUTPUT
LOW WHEN WALL
ADAPTER PRESENT
SCHOTTKY
DIODE
4412 F01
Figure 1. Automatic Switchover of Load Between a Battery and a Wall Adapter
0
0.02
0.5
4412 F01b
FORWARD VOLTAGE (V)
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LTC4412
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ABSOLUTE MAXIMUM RATINGS
PI CO FIGURATIO
(Note 1)
Supply Voltage (VIN) .................................. –14V to 36V
Voltage from VIN to SENSE........................ –28V to 28V
Input Voltage
TOP VIEW
CTL........................................................–0.3V to 36V
SENSE ....................................................–14V to 36V
Output Voltage
V
1
6 SENSE
5 GATE
4 STAT
IN
GND 2
CTL 3
GATE ..................... –0.3V to the Higher of VIN + 0.3V
or SENSE + 0.3V
STAT .....................................................–0.3V to 36V
Operating Temperature Range
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 230°C/W
(Note 2) ............................................. –40°C to 85°C
Junction Temperature........................................... 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
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ORDER I FOR ATIO
LEAD FREE FINISH
LTC4412ES6#PBF
LTC4412IS6#PBF
LEAD BASED FINISH
LTC4412ES6
TAPE AND REEL
LTC4412ES6#TRPBF
LTC4412IS6#TRPBF
TAPE AND REEL
LTC4412ES6#TR
LTC4412IS6#TR
PART MARKING*
LTA2
PACKAGE DESCRIPTION
TEMPERATURE RANGE
–40°C to 85°C
6-Lead Plastic TSOT-23
6-Lead Plastic TSOT-23
PACKAGE DESCRIPTION
6-Lead Plastic TSOT-23
6-Lead Plastic TSOT-23
LTA2
–40°C to 85°C
PART MARKING*
LTA2
TEMPERATURE RANGE
–40°C to 85°C
LTC4412IS6
LTA2
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is indicated by a label on the shipping container.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS
and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.
The ● denotes specifications which apply over the full operating
temperature range, unless otherwise noted specifications are at TA = 25°C, VIN = 12V, CTL and GND = 0V. Current into a pin is positive
SYMBOL PARAMETER
CONDITIONS
and/or V Must Be in This Range
SENSE
for Proper Operation
MIN
TYP
MAX
UNITS
V ,
IN
Operating Supply Range
V
●
●
2.5
28
V
IN
V
SENSE
I
Quiescent Supply Current at Low Supply
While in Forward Regulation
V
= 3.6V. Measure Combined Current
11
15
19
26
μA
μA
QFL
IN
at V and SENSE Pins Averaged with
IN
V
= 3.5V and V
= 3.6V (Note 3)
SENSE
SENSE
I
Quiescent Supply Current at High Supply
While in Forward Regulation
V
= 28V. Measure Combined Current
IN
●
QFH
at V and SENSE Pins Averaged with
IN
V
= 27.9V and V
= 28V (Note 3)
SENSE
SENSE
I
I
Quiescent Supply Current at Low Supply
While in Reverse Turn-Off
V
= 3.6V, V = 3.7V. Measure
SENSE
10
16
19
28
μA
μA
QRL
QRH
IN
Combined Current of V and SENSE Pins
IN
Quiescent Supply Current at High Supply
While in Reverse Turn-Off
V
= 27.9V, V
= 28V. Measure
SENSE
IN
Combined Current of V and SENSE Pins
IN
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LTC4412
ELECTRICAL CHARACTERISTICS
and current out of a pin is negative. All voltages are referenced to GND, unless otherwise specified.
The ● denotes specifications which apply over the full operating
temperature range, unless otherwise noted specifications are at TA = 25°C, VIN = 12V, CTL and GND = 0V. Current into a pin is positive
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
I
I
I
Quiescent Supply Current at Low Supply
with CTL Active
V
= 3.6V, V
= 0V, V = 1V
CTL
7
13
μA
QCL
IN
IN
SENSE
Quiescent Supply Current at High Supply
with CTL Active
V
= 28V, V
= 0V, V = 1V
12
0
20
1
μA
μA
QCH
LEAK
SENSE
CTL
V
and SENSE Pin Leakage Currents
V
V
= 28V, V
= 14V, V
= 0V; V
= –14V; V
= 28V, V = 0V
= 14V, V = –14V
SENSE IN
–3
IN
IN
IN
SENSE
SENSE
SENSE
IN
When Other Pin Supplies Power
PowerPath Controller
V
V
PowerPath Switch Forward Regulation
Voltage
V
V
– V
, 2.5V ≤ V ≤ 28V
●
●
10
10
20
20
32
32
mV
mV
FR
IN
SENSE
IN
PowerPath Switch Reverse Turn-Off
Threshold Voltage
– V , 2.5V ≤ V ≤ 28V
IN IN
RTO
SENSE
GATE and STAT Outputs
GATE Active Forward Regulation
(Note 4)
I
I
Source Current
Sink Current
–1
25
–2.5
50
–5
85
μA
μA
G(SRC)
G(SNK)
V
GATE Clamp Voltage
Apply I
= 1μA, V = 12V,
6.3
7
7.7
V
G(ON)
GATE
IN
V
= 11.9V, Measure V – V
SENSE
IN GATE
V
GATE Off Voltage
Apply I
= –5μA, V = 12V,
0.13
0.25
V
G(OFF)
GATE
IN
V
V
V
= 12.1V, Measure V
– V
SENSE
SENSE GATE
t
t
I
I
t
t
GATE Turn-On Time
GATE Turn-Off Time
STAT Off Current
< –3V, C = 1nF (Note 5)
GATE
110
13
0
175
22
1
μs
μs
μA
μA
μs
μs
G(ON)
G(OFF)
S(OFF)
S(SNK)
S(ON)
S(OFF)
GS
GS
> –1.5V, C
= 1nF (Note 6)
GATE
2.5V ≤ V ≤ 28V (Note 7)
●
●
–1
6
IN
STAT Sink Current
STAT Turn-On Time
STAT Turn-Off Time
2.5V ≤ V ≤ 28V (Note 7)
10
4.5
40
17
25
75
IN
(Note 8)
(Note 8)
CTL Input
V
V
CTL Input Low Voltage
CTL Input High Voltage
CTL Input Pull-Down Current
CTL Hysteresis
2.5V ≤ V ≤ 28V
●
●
0.5
0.635
3.5
0.35
5.5
V
V
IL
IH
IN
2.5V ≤ V ≤ 28V
0.9
1
IN
I
0.35V ≤ V ≤ 28V
μA
mV
CTL
CTL
H
2.5V ≤ V ≤ 28V
135
CTL
IN
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4412E is guaranteed to meet performance specifications
from 0°C to 85°C operating temperature range. Specifications over the –
40°C to 85°C operating temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC4412IS6 is guaranteed over the –40°C to 85°C operating temperature
range.
Note 4: V is held at 12V and GATE is forced to 10.5V. SENSE is set at
12V to measure the source current at GATE. SENSE is set at 11.9V to
measure sink current at GATE.
IN
Note 5: V is held at 12V and SENSE is stepped from 12.2V to 11.8V to
IN
trigger the event. GATE voltage is initially V
.
G(OFF)
Note 6: V is held at 12V and SENSE is stepped from 11.8V to 12.2V to
IN
trigger the event. GATE voltage is initially internally clamped at V
.
G(ON)
Note 7: STAT is forced to V – 1.5V. SENSE is set at V – 0.1V to
IN
IN
measure the off current at STAT. SENSE is set V + 0.1V to measure the
IN
sink current at STAT.
Note 3: This results in the same supply current as would be observed with
an external P-channel MOSFET connected to the LTC4412 and operating in
forward regulation.
Note 8: STAT is forced to 9V and V is held at 12V. SENSE is stepped
IN
from 11.8V to 12.2V to measure the STAT turn-on time defined when I
STAT
reaches one half the measured I
SENSE is stepped from 12.2V to
S(SNK).
11.8V to measure the STAT turn-off time defined when I
reaches one
STAT
half the measured I
S(SNK) .
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LTC4412
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TYPICAL PERFOR A CE CHARACTERISTICS
VFR vs Temperature and
Supply Voltage
Normalized Quiescent Supply
Current vs Temperature
V
RTO vs Temperature and
Supply Voltage
22
20
18
22
20
18
1.05
V
= 2.5V
= 28V
IN
V
= 28V
3.6V ≤ V ≤ 28V
IN
IN
V
IN
1.0
V
= 2.5V
IN
0.95
50
100 125
–50 –25
0
25
75
50
100 125
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
–50 –25
0
25
75
TEMPERATURE (°C)
TEMPERATURE (°C)
4412 G01
4412 G02
4412 G03
VG(OFF) vs Temperature and IGATE
I
LEAK vs Temperature
VG(ON) vs Temperature
7.1
–0.20
–0.25
–0.30
0.25
0.20
0.15
0.10
0.05
0
8V ≤ V ≤ 28V
2.5V ≤ V ≤ 28V
IN
= 1μA
IN
I
GATE
I
= –10μA
GATE
I
= –5μA
GATE
7.0
6.9
I
= 0μA
GATE
–0.35
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
50
100 125
50
TEMPERATURE (°C)
100 125
–50
25
75
–50 –25
0
25
75
–25
0
TEMPERATURE (°C)
4412 G05
4412 G04
4412 G06
IS(SNK) vs Temperature and VIN
tG(ON) vs Temperature
tG(OFF) vs Temperature
10.5
10.0
9.5
120
110
100
13.5
13.0
12.5
V
= V – 1.5V
IN
3.6V ≤ V ≤ 28V
GATE
3.6V ≤ V ≤ 28V
GATE
STAT
IN
= 1nF
IN
= 1nF
C
C
V
= 28V
IN
V
= 2.5V
IN
50
TEMPERATURE (°C)
100 125
–50 –25
0
25
75
50
0
TEMPERATURE (°C)
100 125
–50 –25
0
25
50
75
100 125
–50 –25
25
75
TEMPERATURE (°C)
4412 G09
4412 G07
4412 G08
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LTC4412
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PI FU CTIO S
VIN (Pin1): PrimaryInputSupplyVoltage. Suppliespower
to the internal circuitry and is one of two voltage sense
inputs to the internal analog controller (The other input to
the controller is the SENSE pin). This input is usually
supplied power from a battery or other power source
which supplies current to the load. This pin can be by-
passed to ground with a capacitor in the range of 0.1μF to
10μF if needed to suppress load transients.
STAT (Pin 4): Open-Drain Output Status Pin. When the
SENSE pin is pulled above the VIN pin with an auxiliary
powersourcebyabout20mVormore, thereverseturn-off
threshold (VRTO) is reached. The STAT pin will then go
from an open state to a 10μA current sink (IS(SNK)). The
STAT pin current sink can be used, along with an external
resistor, to turn on an auxiliary P-channel power switch
and/or signal the presence of an auxiliary power source to
a microcontroller.
GND (Pin 2): Ground. Provides a power return for all the
internal circuits.
GATE (Pin 5): Primary P-Channel MOSFET Power Switch
Gate Drive Pin. This pin is directed by the power controller
to maintain a forward regulation voltage (VFR) of 20mV
between the VIN and SENSE pins when an auxiliary power
source is not present. When an auxiliary power source is
connected, the GATE pin will pull up to the SENSE pin
voltage, turning off the primary P-channel power switch.
CTL(Pin3):DigitalControlInput.Alogicalhighinput(VIH)
on this pin forces the gate to source voltage of the primary
P-channelMOSFETpowerswitchtoasmallvoltage(VGOFF).
This will turn the MOSFET off and no current will flow from
theprimarypowerinputatVIN iftheMOSFETisconfigured
so that the drain to source diode does not forward bias. A
high input also forces the STAT pin to sink 10μA of current
(IS(SNK)). If the STAT pin is used to control an auxiliary P-
channel power switch, then a second active source of
power,suchasanACwalladaptor,willbeconnectedtothe
load (see Applications Information). An internal current
sink will pull the CTL pin voltage to ground (logical low) if
the pin is open.
SENSE (Pin 6): Power Sense Input Pin. Supplies power to
the internal circuitry and is a voltage sense input to the
internalanalogcontroller(Theotherinputtothecontroller
is the VIN pin). This input is usually supplied power from
an auxiliary source such as an AC adapter or back-up
battery which also supplies current to the load.
W
BLOCK DIAGRA
+
AUXILIARY
–
SUPPLY
+
+
OUTPUT
PRIMARY
–
–
TO LOAD
SUPPLY
1
6
V
IN
SENSE
–
+
POWER SOURCE
SELECTOR
A1
POWER
LINEAR GATE
DRIVER AND
VOLTAGE/CURRENT
REFERENCE
0.5V
GATE
STAT
5
4
VOLTAGE CLAMP
V
CC
CTL
ON/OFF
3
+
STATUS
OUTPUT
ON/OFF
C1
ANALOG CONTROLLER
3.5μA
10μA
–
GND
2
4412 BD
*DRAIN-SOURCE DIODE OF MOSFET
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LTC4412
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OPERATIO
OperationcanbestbeunderstoodbyreferringtotheBlock
Diagram, whichillustratestheinternalcircuitblocksalong
with the few external components, and the graph that
accompaniesFigure1.Thetermsprimaryandauxiliaryare
arbitrary and may be changed to suit the application.
Operation begins when either or both power sources are
applied and the CTL control pin is below the input low
voltage of 0.35V (VIL). If only the primary supply is
present,thePowerSourceSelectorwillpowertheLTC4412
from the VIN pin. Amplifier A1 will deliver a current to the
Analog Controller block that is proportional to the voltage
difference in the VIN and SENSE pins. While the voltage on
SENSE is lower than VIN – 20mV (VFR), the Analog
Controller will instruct the Linear Gate Driver and Voltage
ClampblocktopulldowntheGATEpinvoltageandturnon
the external P-channel MOSFET. The dynamic pull-down
current of 50μA (IG(SNK)) stops when the GATE voltage
reaches ground or the gate clamp voltage. The gate clamp
The Power Source Selector will power the LTC4412 from
the SENSE pin. As the SENSE voltage pulls above VIN –
20mV, the Analog Controller will instruct the Linear Gate
DriverandVoltageClampblocktopulltheGATEvoltageup
to turn off the P-channel MOSFET. When the voltage on
SENSE is higher than VIN + 20mV (VRTO), the Analog
Controller will instruct the Linear Gate Driver and Voltage
Clamp block to rapidly pull the GATE pin voltage to the
SENSE pin voltage. This action will quickly finish turning
off the external P-channel MOSFET if it hasn’t already
turned completely off. For a clean transistion, the reverse
turn-off threshold has hysteresis to prevent uncertainty.
The system is now in the reverse turn-off mode. Power to
the load is being delivered through the external diode and
no current is drawn from the primary supply. The external
diode provides protection in case the auxiliary supply is
below the primary supply, sinks current to ground or is
connected reverse polarity. During the reverse turn-off
mode of operation the STAT pin will sink 10μA of current
(IS(SNK)) if connected. Note that the external MOSFET is
wired so that the drain to source diode will momentarily
forward bias when power is first applied to VIN and will
become reverse biased when an auxiliary supply is ap-
plied.
voltage is 7V (VG(ON)) below the higher of VIN or VSENSE
.
AstheSENSEvoltagepullsuptoVIN –20mV, theLTC4412
will regulate the GATE voltage to maintain a 20mV differ-
ence between VIN and VSENSE which is also the VDS of the
MOSFET. The system is now in the forward regulation
mode and the load will be powered from the primary
supply. Astheloadcurrentvaries, theGATEvoltagewillbe
controlled to maintain the 20mV difference. If the load
current exceeds the P-channel MOSFET’s ability to deliver
the current with a 20mV VDS the GATE voltage will clamp,
theMOSFETwillbehaveasafixedresistorandtheforward
voltage will increase slightly. While the MOSFET is on the
STAT pin is an open circuit.
WhentheCTL(control)inputisassertedhigh, theexternal
MOSFET will have its gate to source voltage forced to a
small voltage VG(OFF) and the STAT pin will sink 10μA of
current if connected. This feature is useful to allow control
input switching of the load between two power sources as
shown in Figure 4 or as a switchable high side driver as
shown in Figure 7. A 3.5μA internal pull- down current
(ICTL) on the CTL pin will insure a low level input if the pin
should become open.
When an auxiliary supply is applied, the SENSE pin will be
pulled higher than the VIN pin through the external diode.
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LTC4412
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APPLICATIO S I FOR ATIO
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Introduction
necessity. If a forward voltage drop of more than 20mV is
acceptable then a smaller MOSFET can be used, but must
be sized compatible with the higher power dissipation.
Care should be taken to ensure that the power dissipated
is never allowed to rise above the manufacturer’s recom-
mended maximum level. The auxiliary MOSFET power
switch, if used, has similar considerations, but its VGS can
be tailored by resistor selection. When choosing the
resistor value consider the full range of STAT pin current
(IS(SNK) ) that may flow through it.
The system designer will find the LTC4412 useful in a
variety of cost and space sensitive power control applica-
tions that include low loss diode OR’ing, fully automatic
switchoverfromaprimarytoanauxiliarysourceofpower,
microcontroller controlled switchover from a primary to
an auxiliary source of power, load sharing between two or
more batteries, charging of multiple batteries from a
single charger and high side power switching.
External P-Channel MOSFET Transistor Selection
VIN and SENSE Pin Bypass Capacitors
Important parameters for the selection of MOSFETs are
the maximum drain-source voltage VDS(MAX), threshold
Many types of capacitors, ranging from 0.1μF to 10μF and
located close to the LTC4412, will provide adequate VIN
bypassing if needed. Voltage droop can occur at the load
duringasupplyswitchoverbecausesometimeisrequired
to turn on the MOSFET power switch. Factors that deter-
mine the magnitude of the voltage droop include the
supply rise and fall times, the MOSFET’s characteristics,
the value of COUT and the load current. Droop can be made
insignificant by the proper choice of COUT, since the droop
is inversely proportional to the capacitance. Bypass ca-
pacitance for the load also depends on the application’s
dynamic load requirements and typically ranges from 1μF
to 47μF. In all cases, the maximum droop is limited to the
drain source diode forward drop inside the MOSFET.
voltage VGS(VT) and on-resistance RDS(ON)
.
The maximum allowable drain-source voltage, VDS(MAX),
must be high enough to withstand the maximum drain-
source voltage seen in the application.
The maximum gate drive voltage for the primary MOSFET
issetbythesmalleroftheVINsupplyvoltageortheinternal
clamping voltage VG(ON). A logic level MOSFET is com-
monly used, but if a low supply voltage limits the gate
voltage, a sub-logic level threshold MOSFET should be
considered. The maximum gate drive voltage for the
auxiliary MOSFET, if used, is determined by the external
resistor connected to the STAT pin and the STAT pin sink
current.
Caution must be exercised when using multilayer ceramic
capacitors. Because of the self resonance and high Q
characteristics of some types of ceramic capacitors, high
voltage transients can be generated under some start-up
conditions such as connecting a supply input to a hot
power source. To reduce the Q and prevent these tran-
sients from exceeding the LTC4412’s absolute maximum
voltage rating, the capacitor’s ESR can be increased by
adding up to several ohms of resistance in series with the
ceramic capacitor. Refer to Application Note 88.
As a general rule, select a MOSFET with a low enough
RDS(ON) to obtain the desired VDS while operating at full
loadcurrentandanachievableVGS.TheMOSFETnormally
operates in the linear region and acts like a voltage
controlled resistor. If the MOSFET is grossly undersized,
it can enter the saturation region and a large VDS may
result. However, the drain-source diode of the MOSFET, if
forward biased, will limit VDS. A large VDS, combined with
the load current, will likely result in excessively high
MOSFETpowerdissipation.KeepinmindthattheLTC4412
will regulate the forward voltage drop across the primary
MOSFET at 20mV if RDS(ON) is low enough. The required
RDS(ON) can be calculated by dividing 0.02V by the load
current in amps. Achieving forward regulation will mini-
mize power loss and heat dissipation, but it is not a
Theselectedcapacitancevalueandcapacitor’sESRcanbe
verified by observing VIN and SENSE for acceptable volt-
age transitions during dynamic conditions over the full
load current range. This should be checked with each
power source as well. Ringing may indicate an incorrect
bypass capacitor value and/or too low an ESR.
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LTC4412
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APPLICATIO S I FOR ATIO
VIN and SENSE Pin Usage
currents, if significant, should be accounted for when
determiningthevoltageacrosstheresistorwhentheSTAT
pin is either on or off.
Sincetheanalogcontroller’sthresholdsaresmall(±20mV),
the VIN and SENSE pin connections should be made in a
way to avoid unwanted I • R drops in the power path. Both
pins are protected from negative voltages.
Control Pin Usage
This is a digital control input pin with low threshold
voltages (VIL,VIH) for use with logic powered from as little
as 1V. During normal operation, the CTL pin can be biased
at any voltage between ground and 28V, regardless of the
supply voltage to the LTC4412. A logical high input on this
pin forces the gate to source voltage of the primary
P-channelMOSFETpowerswitchtoasmallvoltage(VGOFF).
This will turn the MOSFET off and no current will flow from
theprimarypowerinputatVIN iftheMOSFETisconfigured
sothatthedraintosourcediodeisnotforwardbiased. The
high input also forces the STAT pin to sink 10μA of current
(IS(SNK)). See the Typical Applications for various ex-
amples on using the STAT pin. A 3.5μA internal pull-down
current (ICTL) on the CTL pin will insure a logical low level
input if the pin should be open.
GATE Pin Usage
The GATE pin controls the external P-channel MOSFET
connected between the VIN and SENSE pins when the load
current is supplied by the power source at VIN. In this
mode of operation, the internal current source, which is
responsible for pulling the GATE pin up, is limited to a few
microamps (IG(SRC)). If external opposing leakage cur-
rents exceed this, the GATE pin voltage will reach the
clamp voltage (VGON) and VDS will be smaller. The internal
current sink, which is responsible for pulling the GATE pin
down, has a higher current capability (IG(SNK)). With an
auxiliary supply input pulling up on the SENSE pin and
exceeding the VIN pin voltage by 20mV (VRTO), the device
enters the reverse turn-off mode and a much stronger
current source is available to oppose external leakage
currents and turn off the MOSFET (VGOFF).
Protection
Most of the application circuits shown provide some
protection against supply faults such as shorted, low or
reversed supply inputs. The fault protection does not
protectshortedsuppliesbutcanisolateothersuppliesand
the load from faults. A necessary condition of this protec-
tion is for all components to have sufficient breakdown
voltages. In some cases, if protection of the auxiliary input
(sometimes referred to as the wall adapter input) is not
required, then the series diode or MOSFET may be elimi-
nated.
While in forward regulation, if the on resistance of the
MOSFET is too high to maintain forward regulation, the
GATE pin will maximize the MOSFET’s VGS to that of the
clamp voltage (VGON). The clamping action takes place
between the higher of VIN or VSENSE and the GATE pin.
Status Pin Usage
During normal operation, the open-drain STAT pin can be
biased at any voltage between ground and 28V regardless
of the supply voltage to the LTC4412. It is usually con-
nected to a resistor whose other end connects to a voltage
source. In the forward regulation mode, the STAT pin will
be open (IS(OFF)). When a wall adaptor input or other
auxiliary supply is connected to that input, and the voltage
on SENSE is higher than VIN + 20mV (VRTO), the system is
in the reverse turn-off mode. During this mode of opera-
tion the STAT pin will sink 10μA of current (IS(SNK)). This
will result in a voltage change across the resistor, depend-
ingontheresistance,whichisusefultoturnonanauxiliary
P-channel MOSFET or signal to a microcontroller that an
auxiliary power source is connected. External leakage
Internal protection for the LTC4412 is provided to prevent
damaging pin currents and excessive internal self heating
during a fault condition. These fault conditions can be a
resultofanyLTC4412pinsshortedtogroundortoapower
source that is within the pin’s absolute maximum voltage
limits. Both the VIN and SENSE pins are capable of being
taken significantly below ground without current drain or
damagetotheIC(seeAbsoluteMaximumVoltageLimits).
This feature allows for reverse-battery condition without
current drain or damage. This internal protection is not
designedtopreventovercurrentoroverheatingofexternal
components.
4412fa
8
LTC4412
U
TYPICAL APPLICATIO S
Automatic PowerPath Control
Figure 2 illustrates an application circuit for automatic
switchover of load between a battery and a wall adapter
that features lowest power loss. Operation is similar to
Figure 1 except that an auxiliary P-channel MOSFET
replaces the diode. The STAT pin is used to turn on the
MOSFET once the SENSE pin voltage exceeds the battery
voltage by 20mV. When the wall adapter input is applied,
the drain-source diode of the auxiliary MOSFET will turn
on first to pull up the SENSE pin and turn off the primary
MOSFET followed by turning on of the auxiliary MOSFET.
OncetheauxiliaryMOSFEThasturnedonthevoltagedrop
across it can be very low depending on the MOSFET’s
characteristics.
TheapplicationsshowninFigures1, 2and3areautomatic
ideal diode controllers that require no assistance from a
microcontroller. Each of these will automatically connect
the higher supply voltage, after accounting for certain
diode forward voltage drops, to the load with application
of the higher supply voltage.
Figure 1 illustrates an application circuit for automatic
switchover of a load between a battery and a wall adapter
or other power input. With application of the battery, the
load will initially be pulled up by the drain-source diode of
the P-channel MOSFET. As the LTC4412 comes into
action, it will control the MOSFET’s gate to turn it on and
reduce the MOSFET’s voltage drop from a diode drop to
20mV. The system is now in the low loss forward regula-
tion mode. Should the wall adapter input be applied, the
SchottkydiodewillpulluptheSENSEpin,connectedtothe
load, above the battery voltage and the LTC4412 will turn
the MOSFET off. The STAT pin will then sink current
indicating an auxiliary input is connected. The battery is
now supplying no load current and all the load current
flows through the Schottky diode. A silicon diode could be
used instead of the Schottky, but will result in higher
power dissipation and heating due to the higher forward
voltage drop.
Figure 3 illustrates an application circuit for the automatic
switchover of a load between a battery and a wall adapter
in the comparator mode. It also shows how a battery
charger can be connected. This circuit differs from Figure
1 in the way the SENSE pin is connected. The SENSE pin
is connected directly to the auxiliary power input and not
the load. This change forces the LTC4412’s control cir-
cuitry to operate in an open-loop comparator mode. While
the battery supplies the system, the GATE pin voltage will
be forced to its lowest clamped potential, instead of being
regulated to maintain a 20mV drop across the MOSFET.
This has the advantages of minimizing power loss in the
MOSFET by minimizing its RON and not having the influ-
ence of a linear control loop’s dynamics. A possible
disadvantage is if the auxiliary input ramps up slow
enough the load voltage will initially droop before rising.
AUXILIARY
P-CHANNEL
MOSFET
*
WALL
ADAPTER
INPUT
WALL
ADAPTER
INPUT
PRIMARY
P-CHANNEL
MOSFET
*
P-CHANNEL
BATTERY
MOSFET
*
CHARGER
TO LOAD
TO LOAD
BATTERY
CELL(S)
BATTERY
CELL(S)
C
OUT
C
OUT
LTC4412
SENSE
LTC4412
1
2
3
6
5
4
V
1
2
3
6
5
4
CC
V
IN
V
SENSE
IN
GND GATE
CTL STAT
470k
STATUS OUTPUT
IS LOW WHEN A
WALL ADAPTER
IS PRESENT
GND GATE
CTL STAT
470k
STATUS OUTPUT
DROPS WHEN A
WALL ADAPTER
IS PRESENT
4412 F03
4412 F02
*DRAIN-SOURCE DIODE OF MOSFET
*DRAIN-SOURCE DIODE OF MOSFET
Figure 2. Automatic Switchover of Load Between a Battery and a
Wall Adapter with Auxiliary P-Channel MOSFET for Lowest Loss
Figure 3. Automatic Switchover of Load Between
a Battery and a Wall Adapter in Comparator Mode
4412fa
9
LTC4412
U
TYPICAL APPLICATIO S
auxiliary stays connected. When the primary power is
disconnectedandVIN fallsbelowVLOAD, itwillturnonthe
auxiliary MOSFET if CTL is low, but VLOAD must stay up
long enough for the MOSFET to turn on. At a minimum,
This is due to the SENSE pin voltage rising above the
battery voltage and turning off the MOSFET before the
Schottky diode turns on. The factors that determine the
magnitude of the voltage droop are the auxiliary input rise
time, the type of diode used, the value of COUT and the load
current.
C
OUT capacitancemustbesizedtoholdupVLOAD untilthe
transistion between the sets of MOSFETs is complete.
Sufficient capacitance on the load and low or no capaci-
tance on VIN will help ensure this. If desired, this can be
avoided by use of a capacitor on VIN to ensure that VIN
Ideal Diode Control with a Microcontroller
Figure 4 illustrates an application circuit for microcon-
troller monitoring and control of two power sources. The
microcontroller’s analog inputs, perhaps with the aid of
aresistorvoltagedivider,monitorseachsupplyinputand
commandstheLTC4412throughtheCTLinput. Back-to-
back MOSFETs are used so that the drain-source diode
will not power the load when the MOSFET is turned off
(dual MOSFETs in one package are commercially avail-
able).
falls more slowly than VLOAD
.
Load Sharing
Figure 5 illustrates an application circuit for dual battery
load sharing with automatic switchover of load from
batteriestowalladapter.Whicheverbatterycansupplythe
higher voltage will provide the load current until it is
dischargedtothevoltageoftheotherbattery. Theloadwill
then be shared between the two batteries according to the
capacity of each battery. The higher capacity battery will
provide proportionally higher current to the load. When a
wall adapter input is applied, both MOSFETs will turn off
and no load current will be drawn from the batteries. The
STATpinsprovideinformationastowhichinputissupply-
ing the load current. This concept can be expanded to
more power inputs.
With a logical low input on the CTL pin, the primary input
supplies power to the load regardless of the auxiliary
voltage. When CTL is switched high, the auxiliary input
will power the load whether or not it is higher or lower
than the primary power voltage. Once the auxiliary is on,
the primary power can be removed and the auxiliary will
continue to power the load. Only when the primary
voltageishigherthantheauxiliaryvoltagewilltakingCTL
low switch back to the primary power, otherwise the
WALL
ADAPTER
INPUT
*
AUXILIARY
P-CHANNEL MOSFETS
TO LOAD
BAT1
C
OUT
*
*
LTC4412
SENSE
1
2
3
6
5
4
V
AUXILIARY POWER
SOURCE INPUT
CC
V
IN
470k
GND GATE
CTL STAT
470k
STATUS IS HIGH
WHEN BAT1 IS
SUPPLYING
MICROCONTROLLER
PRIMARY
P-CHANNEL MOSFETS
LOAD CURRENT
WHEN BOTH STATUS LINES ARE
HIGH, THEN BOTH BATTERIES ARE
SUPPLYING LOAD CURRENTS. WHEN
BOTH STATUS LINES ARE LOW THEN
WALL ADAPTER IS PRESENT
*
*
TO LOAD
*
C
0.1μF
OUT
BAT2
LTC4412
LTC4412
PRIMARY
POWER
SOURCE INPUT
1
2
3
6
5
4
1
2
3
6
5
4
V
CC
V
SENSE
V
SENSE
IN
IN
GND GATE
CTL STAT
470k
GND GATE
CTL STAT
STATUS IS HIGH
WHEN BAT2 IS
SUPPLYING
4412 F04
4412 F05
LOAD CURRENT
*DRAIN-SOURCE DIODE OF MOSFET
*DRAIN-SOURCE DIODE OF MOSFET
Figure 4. Microcontroller Monitoring and Control
of Two Power Sources
Figure 5. Dual Battery Load Sharing with Automatic
Switchover of Load from Batteries to Wall Adapter
4412fa
10
LTC4412
U
TYPICAL APPLICATIO S
Multiple Battery Charging
High Side Power Switch
Figure 6 illustrates an application circuit for automatic
dual battery charging from a single charger. Whichever
battery has the lower voltage will receive the charging
currentuntilbothbatteryvoltagesareequal, thenbothwill
be charged. When both are charged simultaneously, the
higher capacity battery will get proportionally higher cur-
rent from the charger. For Li-Ion batteries, both batteries
will achieve the float voltage minus the forward regulation
voltage of 20mV. This concept can apply to more than two
batteries. The STAT pins provide information as to which
batteries are being charged. For intelligent control, the
CTL pin input can be used with a microcontroller and
back-to-back MOSFETs as shown in Figure 4. This allows
complete control for disconnection of the charger from
either battery.
Figure 7 illustrates an application circuit for a logic con-
trolled high side power switch. When the CTL pin is a
logical low, the LTC4412 will turn on the MOSFET. Be-
cause the SENSE pin is grounded, the LTC4412 will apply
maximum clamped gate drive voltage to the MOSFET.
When the CTL pin is a logical high, the LTC4412 will turn
off the MOSFET by pulling its gate voltage up to the supply
input voltage and thus deny power to the load. The
MOSFET is connected with its source connected to the
power source. This disables the drain-source diode from
supplyingvoltagetotheloadwhentheMOSFETisoff.Note
that if the load is powered from another source, then the
drain-source diode can forward bias and deliver current to
the power supply connected to the VIN pin.
P-CHANNEL
MOSFET
*
*
TO LOAD OR
PowerPath
BATTERY
CHARGER
INPUT
SUPPLY
TO LOAD
INPUT
CONTROLLER
C
OUT
BAT1
LTC4412
LTC4412
SENSE
1
2
3
6
5
1
2
3
6
5
4
V
CC
0.1μF
V
IN
SENSE
V
IN
GND GATE
CTL STAT
GND GATE
CTL STAT
470k
STATUS IS HIGH
WHEN BAT1 IS
CHARGING
4
LOGIC
INPUT
4412 F07
0.1μF
*DRAIN-SOURCE DIODE OF MOSFET
*
TO LOAD OR
PowerPath
CONTROLLER
Figure 7. Logic Controlled High Side Power Switch
BAT2
LTC4412
1
2
3
6
5
4
V
CC
V
SENSE
IN
GND GATE
CTL STAT
470k
STATUS IS HIGH
WHEN BAT2 IS
CHARGING
4412 F06
*DRAIN-SOURCE DIODE OF MOSFET
Figure 6. Automatic Dual Battery Charging
from Single Charging Source
4412fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection ofits circuits as described herein willnotinfringe on existing patentrights.
11
LTC4412
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302 REV B
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
RELATED PARTS
PART NUMBER
LTC1473
DESCRIPTION
COMMENTS
Switches and Isolates Sources Up to 30V
Dual PowerPath Switch Driver
PowerPath Controller for Dual Battery Systems
LTC1479
Complete PowerPath Management for Two Batteries; DC Power Source,
Charger and Backup
LTC1558/LTC1559 Back-Up Battery Controller with Programmable Output
Adjustable Backup Voltage from 1.2V NiCd Button Cell,
Includes Boost Converter
LT®1579
LTC1733/LTC1734 Monolithic Linear Li-Ion Chargers
300mA Dual Input Smart Battery Back-Up Regulator
Maintains Output Regulation with Dual Inputs, 0.4V Dropout at 300mA
Thermal Regulation, No External MOSFET/Sense Resistor
Complete Dual Battery Charger/Selector System, 36-Lead SSOP
Adjustable Trip Voltage/Hysteresis, ThinSOT
LTC1960
LTC1998
LTC4350
Dual Battery Charger Selector with SPI
2.5μA, 1% Accurate Programmable Battery Detector
Hot Swappable Load Share Controller
Allows N + 1 Redundant Supply, Equally Loads Multiple Power Supplies
Connected in Parallel
LTC4410
USB Power Manager in ThinSOT
Enables Simultaneous Battery Charging and
Operation of USB Component Peripheral Devices
4412fa
LT 0607 • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
12
© LINEAR TECHNOLOGY CORPORATION 2002
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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