LTC4413EDD-2#PBF [Linear]
LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C;型号: | LTC4413EDD-2#PBF |
厂家: | Linear |
描述: | LTC4413-1 and -2 - Dual 2.6A, 2.5V to 5.5V Fast Ideal Diodes in a 3mm x 3mm DFN; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C 光电二极管 |
文件: | 总16页 (文件大小:179K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC4413-1/LTC4413-2
Dual 2.6A, 2.5V to 5.5V
Fast Ideal Diodes
in 3mm × 3mm DFN
FEATURES
DESCRIPTION
The LTC®4413-1 and LTC4413-2 each contain two mono-
lithic ideal diodes, each capable of supplying up to 2.6A
from input voltages between 2.5V and 5.5V. The ideal
diodesusea100mΩP-channelMOSFETtoindependently
connect INA to OUTA and INB to OUTB. During normal
forward operation, the voltage drops across each of
these diodes are regulated to as low as 18mV. Quiescent
current is less than 80μA for diode currents up to 1A. If
either of the output voltages exceeds its respective input
voltage, that MOSFET is turned off and less than 1μA of
reverse current flows from OUT to IN. Maximum forward
current in each MOSFET is limited to a constant 2.6A and
internal thermal limiting circuits protect the part during
faultconditions.Aninternalovervoltageprotectionsensor
detects when a voltage exceeds the LTC4413-2 absolute
maximum voltage tolerance.
n
2-Channel Ideal Diode OR’ing or Load Sharing
n
Low Loss Replacement for PowerPath™ OR’ing
Diodes
n
Fast Response Replacement for LTC4413
n
Low Forward On-Resistance (140mΩ Max at 3.6V)
n
Low Reverse Leakage Current
n
Low Regulated Forward Voltage (18mV Typ)
n
Overvoltage Protection Sensor with Drive Output for
an External P-Channel MOSFET (LTC4413-2 Only)
n
2.5V to 5.5V Operating Range
n
2.6A Maximum Forward Current
n
Internal Current Limit Protection
n
Internal Thermal Protection
n
Status Output to Indicate if Selected Channel is
Conducting
Programmable Channel On/Off
Low Profile (0.75mm) 10-Lead 3mm
Package
n
n
× 3mm DFN
Twoactive-highcontrolpinsindependentlyturnoffthetwo
ideal diodes contained within the LTC4413-1/LTC4413-2.
When the selected channel is reverse biased, or the
LTC4413-1/LTC4413-2 is put into low power standby, the
status signal is pulled low by an 11μA open drain.
APPLICATIONS
n
Battery and Wall Adapter Diode OR’ing in Handheld
Products
Backup Battery Diode OR’ing
Power Switching
USB Peripherals
Uninterruptable Supplies
The LTC4413-1/LTC4413-2 are housed in a 10-lead 3mm
n
n
n
n
× 3mm DFN package.
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. PowerPath is a trademark of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
TYPICAL APPLICATION
Automatic Switchover from a Battery to a Wall Adapter
FDR8508
Power Loss vs Load
700
600
V
CC
WALL
ADAPTER
INPUT
INA
OUTA
500
470k
STAT
10μF
LTC4413-1
IDEAL
0.1μF
1Ω
ENBA
STAT
400
LTC4413-2
GND
OVI
300
1N5817
ENBB
INB
OVP
OUTB
OVP
200
BAT
TO LOAD
+
4.7μF
IDEAL
100
0
441312 TA01a
0
500
1000 1500 2000 2500 3000
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
LOAD (mA)
441312 TA01b
OVP IS HIGH WHEN WALL ADAPTER VOLTAGE > 6V
441312fd
1
LTC4413-1/LTC4413-2
ABSOLUTE MAXIMUM RATINGS (Note 1)
INA, INB, OUTA, OUTB, STAT,
Storage Temperature Range .................. –65°C to 125°C
Continuous Power Dissipation..........................1500mW
(Derate 25mW/°C Above 70°C)
ENBA, ENBB Voltage.................................... –0.3V to 6V
OVI, OVP Voltage ....................................... –0.3V to 13V
Operating Temperature Range .................–40°C to 85°C
PIN CONFIGURATION
LTC4413-1
LTC4413-2
TOP VIEW
TOP VIEW
INA
ENBA
GND
ENBB
INB
1
2
3
4
5
10 OUTA
INA
ENBA
GND
ENBB
INB
1
2
3
4
5
10 OUTA
9
8
7
6
STAT
NC
9
8
7
6
STAT
OVI
11
11
NC
OVP
OUTB
OUTB
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
T
= 125°C, θ = 43°C/W
T = 125°C, θ = 43°C/W
JMAX JA
JMAX
JA
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
EXPOSED PAD (PIN 11) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH
LTC4413EDD-1#PBF
LTC4413EDD-2#PBF
LEAD BASED FINISH
LTC4413EDD-1
TAPE AND REEL
PART MARKING
LCPP
PACKAGE DESCRIPTION
TEMPERATURE RANGE
LTC4413EDD-1#TRPBF
LTC4413EDD-2#TRPBF
TAPE AND REEL
–40°C to 85°C
10-Lead (3mm × 3mm) Plastic DFN
10-Lead (3mm × 3mm) Plastic DFN
PACKAGE DESCRIPTION
LCPQ
–40°C to 85°C
PART MARKING
LCPP
TEMPERATURE RANGE
–40°C to 85°C
LTC4413EDD-1#TR
LTC4413EDD-2#TR
10-Lead (3mm × 3mm) Plastic DFN
10-Lead (3mm × 3mm) Plastic DFN
LTC4413EDD-2
LCPQ
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/
ELECTRICAL CHARACTERISTICS
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Notes 2, 6)
SYMBOL
PARAMETER
CONDITIONS
and/or V Must be in This Range for
OUT
MIN
TYP
MAX
UNITS
l
V , V
IN OUT
Operating Supply Range for Channel A or B
V
2.5
5.5
V
IN
Proper Operation
l
l
l
UVLO
UVLO Turn-On Rising Threshold
UVLO Turn-Off Falling Threshold
Max (V , V , V
, V
)
)
2.45
V
V
INA INB OUTA OUTB
Max (V , V , V
, V
1.7
–1
INA INB OUTA OUTB
I
I
I
Quiescent Current in Forward Regulation,
Measured via GND
V
= 3.6V, I = 100mA, V = 0V,
40
2.5
28
58
4.5
36
μA
QF
INA
INB
INA
INB
I
= 0mA (Note 3)
l
Current Drawn from or Sourced into IN
V
IN
= 3.6V, V = 5.5V (Note 6)
OUT
μA
QRIN
QRGND
When V
is Greater than V
IN
OUT
Quiescent Current While in Reverse
Turn-Off, Measured via GND
V
V
= V = 0V, V
STAT
= V = 5.5V,
OUTA
μA
INA
INB
OUTB
= 0V
441312fd
2
LTC4413-1/LTC4413-2
ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. (Notes 2, 6)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
l
l
I
Quiescent Current While in Reverse
V
= V = 0V, V
= 3.6V, V = 5.5V
OUTB
3.5
6.5
μA
QROUTB
QOFF
INA
INA
INB
OUTA
Turn-Off. Current Drawn from V
OUTB Supplies Chip Power
When
OUTA
I
Quiescent Current with Both ENBA and
ENBB High
V
= V = 3.6V, V
= V = 1V
ENBB
28
38
μA
INB
ENBA
l
l
V
V
Reverse Turn-Off Voltage (V
– V )
V
V
= 3.6V
= 3.6V
–5
10
24
mV
mV
RTO
OUT
IN
IN
Forward Voltage Drop (V – V
)
OUT
18
100
140
11
FWD
IN
IN
at I
= –1mA
OUT
R
R
On-Resistance, R
Regulation
V
IN
V
IN
V
IN
= 3.6V, I = –100mA to –500mA (Note 5)
OUT
140
200
mΩ
mΩ
μs
FWD
ON
FWD
(Measured as ΔV/ΔI)
On-Resistance, R Regulation
= 3.6V, I = 1A (Note 5)
ON
IN
(Measured as V/I at I = 1A)
IN
t
ON
PowerPath Turn-On Time
= 3.6V, from ENB Falling to I
Ramp
OUT
Starting
t
PowerPath Turn-Off Time
V
= 3.6V, from ENB Rising with I = 100mA
2
μs
OFF
IN
IN
Falling to 0mA
Short-Circuit Response
I
Current Limit
V
V
= 3.6V (Note 5)
1.8
A
OC
INA OR B
I
Quiescent Current While in Overcurrent
Operation
= 3.6V, I
= 1.8A (Note 5)
OUT
100
130
μA
QOC
INA OR B
STAT Output
l
l
I
I
t
t
STAT Off Current
Shut Down
–1
7
0
1
μA
μA
μs
μs
SOFF
SON
STAT Sink Current
V
IN
V
IN
V
IN
> V , V < V , T < 135°C, I
< I
MAX
11
1.8
0.8
15
OUT CTL
IL
J
OUT
STAT Pin Current Turn-On Time
STAT Pin Current Turn-Off Time
= 3.6V, from ENB Falling
= 3.6V, from ENB Rising
S(ON)
S(OFF)
ENB Inputs
l
l
V
V
V
ENB Inputs Rising Threshold Voltage
ENB Inputs Falling Threshold Voltage
ENB Input Hysteresis
V
V
V
V
Rising
Falling
540
460
90
600
mV
mV
mV
μA
ENBIH
ENBIL
ENB
400
2
ENB
= (V
– V
)
ENBHYST
ENB
ENBHYST
ENBIH
ENBIL
l
I
ENB Inputs Pull-Down Current
< V = 3.6V, V
< V
3
4
OUT
IN
ENB
IL
OVI Input (LTC4413-2 Only)
V
V
V
OVI Input Rising Threshold Voltage
OVI Input Falling Threshold Voltage
OVI-OVP Voltage Drop
V
OVI
V
OVI
V
OVI
V
OVI
Rising
Falling
5.9
5.6
100
80
6.2
V
V
OVIH
OVIL
OVID
OVI
5.4
= 8V, No Load at OVP
= 8V
mV
μA
I
OVI Bias Current
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC4413-1/LTC4413-2 are guaranteed to meet performance
specifications from 0°C to 85°C. Specifications over the –40°C to 85°C
operating temperature range are assured by design, characterization and
correlation with statistical process controls.
Note 4: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions.
Overtemperature protection will become active at a junction temperature
greater than the maximum operating temperature. Continuous operation
above the specified maximum operating junction temperature may impair
device reliability.
Note 5: Specification is guaranteed by correlation to wafer-level
measurements.
Note 3: Quiescent current increases with diode current: refer to plot of
Note 6: Unless otherwise specified, current into a pin is positive and
current out of a pin is negative. All voltages referenced to GND.
I
QF
vs I
.
OUT
441312fd
3
LTC4413-1/LTC4413-2
TYPICAL PERFORMANCE CHARACTERISTICS
IQF vs ILOAD (Log)
IQF vs ILOAD (Linear)
IQF vs Temperature
120
120
100
80
60
40
20
0
120
100
120°C
120°C
80°C
40°C
0°C
80°C
40°C
0°C
100
80
1A
80
60
500mA
100mA
–40°C
–40°C
60
40
1mA
40
20
0
20
0
1
10
100
LOAD (mA)
1000
10000
0
500 1000 1500 2000 2500 3000
LOAD (mA)
–40
0
40
TEMPERATURE (°C)
80
120
441312 G01
441312 G02
441312 G03
IQF vs VIN
IOC vs Temperature
UVLO Thresholds vs Temperature
3500
3000
2500
2.20
2.15
2.10
90
80
70
60
50
40
30
20
10
0
I
= 1A
QF
RISING
2000
1500
1000
500
0
2.05
2.00
1.95
1.90
1.85
I
= 100mA
QF
FALLING
4
4.5
2
2.5
3
3.5
5
5.5
6
0
40
120
0
40
120
–40
80
–40
80
V
(V)
TEMPERATURE (°C)
TEMPERATURE (°C)
IN
441312 G04
441312 G05
441312 G06
UVLO Hysteresis vs Temperature
ENB Thresholds vs Temperature
ENB Hysteresis vs Temperature
600
500
250
120
100
80
60
40
20
0
200
150
ENBIH
ENBIL
400
300
100
50
0
200
100
0
–40
0
40
80
120
60 80
TEMPERATURE (°C)
–40 –20
0
20 40
100 120
441312 G09
40
TEMPERATURE (°C)
–40 –20
0
20
60 80 100 120
TEMPERATURE (°C)
441312 G08
441312 G07
441312fd
4
LTC4413-1/LTC4413-2
TYPICAL PERFORMANCE CHARACTERISTICS
RFWD vs VIN and ILOAD = 500mA
VFWD and RFWD vs ILOAD (Linear)
RFWD and VFWD vs ILOAD (Log)
80
78
76
74
72
70
68
66
64
62
60
500
400
300
200
250
200
150
100
600
500
300
250
120°C
80°C
40°C
0°C
120°C
80°C
40°C
0°C
–40°C
–40°C
V
400
300
200
150
FWD
R
V
FWD
FWD
200
100
0
100
50
0
R
FWD
100
0
50
0
0
1000 1500 2000 2500 3000
LOAD (mA)
1
10
100
LOAD (mA)
1000
10000
500
2
4
5
5.5
2.5
3
3.5
4.5
6
V
(V)
IN
441312 G11
441312 G12
441312 G10
ILEAK vs Temperature at
VREVERSE = 5.5V
RFWD vs Temperature
V
FWD vs ILOAD (Log)
1
250
200
150
100
50
120
100
120°C
80°C
40°C
0°C
0.1
100mA
–40°C
80
60
5.5V
500mA
0.01
1A
3.6V
0.001
40
20
0
0.0001
0
0.00001
1
10
100
LOAD (mA)
1000
10000
–40
0
40
TEMPERATURE (°C)
80
120
–40 –20
0
20 40 60 80 100 120
TEMPERATURE (°C)
441312 G15
441312 G13
441312 G14
Response to 800mA Load Step
in <16μs
ENB Turn-On, 30μs to Turn On
with 180mA Load
ILEAK vs VREVERSE
100
10
120°C
80°C
40°C
0°C
CH1 = IN 100mV/DIV
CH1 IN 1V/DIV
CH2 OUT
CH2 OUT
100mV/DIV
1V/DIV
CH3 ENB
1V/DIV
1
–40°C
0.1
CH4 I
OUT
0.01
200mV/DIV
CH4 I
OUT
200mV/DIV
0.001
0.0001
0.00001
441312 G17
441312 G18
4μs/DIV
10μs/DIV
0
1
2
3
4
5
6
V
(V)
REVERSE
441312 G16
441312fd
5
LTC4413-1/LTC4413-2
TYPICAL PERFORMANCE CHARACTERISTICS
ENB Turn-Off, 2μs to Disconnect
IN from 180mA Load
Efficiency vs Load Current
Power Loss vs Load Current
100
99
98
97
96
95
94
93
92
91
90
1000
100
10
1
120°C
80°C
40°C
0°C
CH1 IN 1V/DIV
CH2 OUT
1V/DIV
–40°C
CH3 ENB
1V/DIV
CH4 I
IN
100mV/DIV
120°C
80°C
40°C
0°C
441312 G19
4μs/DIV
–40°C
0
1
10
100
1000
10000
1
10
100
1000
10000
LOAD (mA)
LOAD (mA)
441312 G20
441312 G21
Overvoltage Hysteresis
vs Temperature (LTC4413-2 Only)
OVI Current vs Voltage
(LTC4413-2 Only)
Overvoltage Thresholds
vs Temperature (LTC4413-2 Only)
140
120
6.4
6.2
6.0
400
350
300
250
200
150
100
50
T
= 25°C
A
OVP RISING
100
80
60
40
20
5.8
5.6
5.4
5.2
5.0
OVP FALLING
0
0
8
12
0
2
4
6
10
40
0
40
120
–40
0
80
120
–40
80
V
(V)
TEMPERATURE (°C)
TEMPERATURE (°C)
OVI
441312 G24
441312 G23
441312 G22
OVI-OVP Voltage Drop
vs OVI Voltage (LTC4413-2 Only)
IQ OVI vs Temperature
(LTC4413-2 Only)
OVI-OVP vs Temperature
(LTC4413-2 Only)
6
5
4
3
2
1
0
180
160
140
120
100
80
160
140
120
100
80
T
= 25°C
A
I
Q
OVI = 13V
V
= 13V
OHOVP
V
= 6.5V
OHOVP
I
Q
OVI = 6.5V
60
60
40
40
20
20
0
0
40
TEMPERATURE (°C)
–40
0
80
120
8
12
0
2
4
6
10
40 60
20
TEMPERATURE (°C)
–40 –20
0
80 100 120
441312 G27
OVI (V)
441312 G26
441312 G25
441312fd
6
LTC4413-1/LTC4413-2
PIN FUNCTIONS
INA(Pin1):PrimaryIdealDiodeAnodeandPositivePower
Supply for LTC4413-1/LTC4413-2. Bypass INA with a ce-
ramic capacitor of at least 1μF. (Series 1Ω snub resistors
and higher valued capacitances are recommended when
large inductances are in series with this input.) This pin
can be grounded when not used. Limit slew rate on this
pin to less than 2.5V/μs.
OVP (Pin 7, LTC4413-2 Only): Drive Output for an Exter-
nal OVP Switch PMOS Transistor (To Inhibit Overvoltage
Wall Adapter Voltages from Damaging Device.) During
overvoltage conditions, this output will remain high so
long as an overvoltage condition persists. This pin must
be left floating when not in use.
OVI (Pin 8, LTC4413-2 Only): Sense Input for Overvoltage
Protection Block. This pin can be left floating or grounded
when not used.
ENBA (Pin 2): Enable Low for Diode A. Pull this pin high
to shut down this power path. Tie to GND to enable.
Refer to Table 1 for mode control functionality. This pin
can be left floating, a weak (3.5μA) pull-down internal to
LTC4413-1/LTC4413-2 is included.
STAT (Pin 9): Status Condition Indicator. Weak (11μA)
pull-downcurrentoutput.Whenterminated,highindicates
diode conducting. Refer to Table 2 for the operation of this
pin. This pin can also be left floating or grounded.
GND (Pin 3): Power Ground for the IC.
ENBB (Pin 4): Enable Low for Diode B. Pull this pin high
to shut down this power path. Tie to GND to enable.
Refer to Table 1 for mode control functionality. This pin
can be left floating, a weak (3.5μA) pull-down internal to
LTC4413-1/LTC4413-2 is included.
OUTA (Pin 10): Primary Ideal Diode Cathode and Output
of the LTC4413-1/LTC4413-2. Bypass OUTA with a high
(1mΩ min) ESR ceramic capacitor of at least 4.7μF. This
pin must be left floating when not in use. Limit slew rate
on this pin to less than 2.5V/μs.
INB (Pin 5): Secondary Ideal Diode Anode and Positive
PowerSupplyforLTC4413-1/LTC4413-2.BypassINBwitha
ceramiccapacitorofatleast1μF.(Series1Ωsnubresistors
and higher valued capacitances are recommended when
large inductances are in series with this input.) This pin
can be grounded when not used. Limit slew rate on this
pin to less than 2.5V/μs.
Exposed Pad (Pin 11): Signal Ground. This pin must be
soldered to PCB ground to provide both electrical contact
to ground and good thermal contact to PCB.
OUTB (Pin 6): Secondary Ideal Diode Cathode and Output
of the LTC4413-1/LTC4413-2. Bypass OUTB with a high
(1mΩ min) ESR ceramic capacitor of at least 4.7μF. This
pin must be left floating when not in use. Limit slew rate
on this pin to less than 2.5V/μs.
441312fd
7
LTC4413-1/LTC4413-2
BLOCK DIAGRAM
OUTA
AENA
INA
1
10
–
+
OVER CURRENT
+
–
PA
OVER TEMP
UVLO
ENA
ENB
OUTA (MAX)
OUTB (MAX)
BENA
STAT
–
+
OVER TEMP
STB
V
GATEA
V
OFF
–
+
9
0.5V
AENA
ENA
ENBA
A
2
+
–
3μA
11μA
GND
INB
3
5
OUTB
6
–
+
OVER CURRENT
+
–
PB
LTC4413-2 ONLY
OVERVOLTAGE PROTECTION
OVI
–
+
8
7
V
GATEB
V
OFF
–
+
+
–
0.5V
OVP
BENA
ENB
ENBB
B
4
6V
+
–
3μA
441312 BD
441312fd
8
LTC4413-1/LTC4413-2
OPERATION
TheLTC4413-1/LTC4413-2aredescribedwiththeaidofthe
BlockDiagram.Operationbeginswhenthepowersourceat
maintain the output voltage, V
, just below the input
OUTB
voltage V . If this alternate supply, V , exceeds the
INB
INB
voltage at V , the LTC4413-1/LTC4413-2 selects this
V
or V rises above the undervoltage lockout (UVLO)
INB
INA
INA
input voltage as the internal supply (V ). This second
voltageof2.4VandthecorrespondingcontrolpinENBAor
ENBB is low. If only the voltage at the V pin is present,
DD
ideal diode operates independently of the first ideal diode
INA
function.
the internal power source (V ) is supplied from the V
DD
INA
pin. The amplifier (A) pulls a current proportional to the
difference between V and V from the gate (V
When an alternate power source is connected to the load
)
GATEA
INA
OUTA
at V
(or V
), the LTC4413-1/LTC4413-2 sense the
OUTA
OUTB
of the internal PFET (PA), driving this gate voltage below
increased voltage at V
voltage V
, and amplifier A increases the
OUTA
V
. This turns on PA. As V pulls up to a forward
INA
OUTA
, reducing the current through PA. When
GATEA
voltage drop (V ) of 15mV below V , the LTC4413
FWD
INA
V
is higher than V + V , V
will be pulled up
OUTA
INA
RTO GATEA
regulates V
to maintain the small forward voltage
GATEA
to V , turning off PA. The internal power source for the
DD
drop. The system is now in forward regulation and the
load at V is powered from the supply at V . As the
LTC4413-1/LTC4413-2 (V ) then diverts to draw current
DD
OUTA
INA
from the V
pin, only if V
is larger than V (or
OUTA INB
OUTA
load current varies, V
is controlled to maintain V
GATEA
FWD
V
). The system is now in the reverse turn-off mode.
OUTB
until the load current exceeds the transistor’s (PA) ability
Power to the load is being delivered from an alternate
supply, and only a small current (I ) is drawn from or
to deliver the current as V
approaches GND. At this
GATEA
LEAK
point, the PFET behaves as a fixed resistor, R , whereby
ON
sourced to V to sense the potential at V
.
INA
INA
the forward voltage increases slightly with increased load
When the selected channel of the LTC4413-1/LTC4413-2
is in reverse turn-off mode or both channels are disabled,
current. As the magnitude of I
increases further, (such
OUT
that I
> I ) the LTC4413-1/LTC4413-2 fixes the load
LOAD OC
the STAT pin sinks 11μA of current (I ) if connected.
current to the constant value I to protect the device.
SON
OC
The characteristics for parameters R , R , V
and
FWD ON FWD
Channel selection is accomplished using the two ENB
pins, ENBA and ENBB. When the ENBA input is asserted
I
OC
are specified with the aid of Figure 1, illustrating the
LTC4413-1/LTC4413-2 forward voltage drop versus that
(high), PA has its gate voltage pulled to V , turning off
DD
of a Schottky.
PA. A 3.5μA pull-down current on the ENB pins ensures
a low level at these inputs if left floating.
If another supply is provided at V , the LTC4413-1/
INB
LTC4413-2 likewise regulate the gate voltage on PB to
I
OC
LTC4413-1
LTC4413-2
SLOPE: 1/R
ON
I
FWD
1N5817
SLOPE: 1/R
FWD
0
0
V
FWD
FORWARD VOLTAGE (V)
441312 F01
Figure 1. The LTC4413 vs the 1N5817
441312fd
9
LTC4413-1/LTC4413-2
OPERATION
Overcurrent and Short-Circuit Protection
Overvoltage Protection for more information on using the
overvoltage protection function within the LTC4413-2.
Duringanovercurrentcondition,theoutputvoltagedroops
as the load current exceeds the amount of current that
the LTC4413-1/LTC4413-2 can supply. At the time when
an overcurrent condition is first detected, the LTC4413-1/
LTC4413-2 take some time to detect this condition before
Channel Selection and Status Output
Twoactive-highcontrolpinsindependentlyturnoffthetwo
ideal diodes contained within the LTC4413-1/LTC4413-2,
controlling the operation mode as described by Table 1.
When the selected channel is reverse biased, or the
LTC4413-1/LTC4413-2 is put into low power standby, the
status signal indicates this condition with a low voltage.
reducing the current to I . For short durations after the
OC
output is shorted, until TOC, the current may exceed I .
OC
The magnitude of this peak short-circuit current can be
large depending on the load current immediately before
theshort-circuitoccurs.Duringovercurrentoperation,the
powerconsumptionoftheLTC4413-1/LTC4413-2islarge,
and is likely to cause an overtemperature condition as the
internal die temperature exceeds the thermal shutdown
temperature.
Table 1. Mode Control
ENB1
ENB2 STATE
Low
Low
Diode’OR NB: The Two Outputs are not Connected
Internal to the Device
Low
High
High
High
Low
High
Diode A = ENABLED, Diode B = DISABLED
Diode A = DISABLED, Diode B = ENABLED
All Off (Low Power Standby)
Overtemperature Protection
The overtemperature condition is detected when the
internal die temperature increases beyond 150°C. An
overtemperature condition will cause the gate amplifiers
(A and B) as well as the two P-channel MOSFETs (PA
and PB) to shut off. When the internal die temperature
cools to below 140°C, the amplifiers turn on and the
LTC4413-1/LTC4413-2 reverts to normal operation. Note
that prolonged operation under overtemperature condi-
tions degrades reliability.
The function of the STAT pin depends on the mode that
has been selected. Table 2 describes the STAT pin output
current, as a function of the mode selected as well as the
conduction state of the two diodes.
Table 2. STAT Output Pin Function
ENB1
ENB2 CONDITIONS
STAT
Low
Low
Diode A Forward Bias,
Diode B Forward Bias
I
= 0μA
SNK
Diode A Forward Bias,
Diode B Reverse Bias
I
I
I
I
I
I
I
I
= 0μA
SNK
SNK
SNK
SNK
SNK
SNK
SNK
SNK
Overvoltage Protection (LTC4413-2 Only)
Diode A Reverse Bias,
Diode B Forward Bias
= 11μA
= 11μA
= 0μA
An overvoltage condition is detected whenever the
overvoltage input (OVI) pin is pulled above 6V. The con-
dition persists until the OVI voltage falls below 5.6V. The
overvoltage protection (OVP) output is low unless an
overvoltageconditionisdetected. Ifanovervoltagecondi-
tion is present, the OVP output is pulled up to the voltage
applied to the OVI input. This output signal can be used to
enable or disable an external PFET that is placed between
the input that is the source of the excessive voltage and
the input to the LTC4413-2, thus eliminating the potential
damage that may occur to the LTC4413-2 if its input volt-
age exceeds the absolute maximum voltage of 6V. See
the Applications Information section Dual Battery Load
Sharing with Automatic Switchover to a Wall Adapter with
Diode A Reverse Bias,
Diode B Reverse Bias
Low
High
High
High
Low
High
Diode A Forward Bias,
Diode B Disabled
Diode A Reverse Bias,
Diode B Disabled
= 11μA
= 0μA
Diode A Disabled,
Diode B Forward Bias
Diode A Disabled,
Diode B Reverse Bias
= 11μA
= 11μA
Diode A Disabled,
Diode B Disabled
441312fd
10
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Introduction
the gate voltage of MP2, causing it to conduct. This status
signal can be used to provide information as to whether
the wall adapter (or BATB) is supplying the load current.
If the wall adapter voltage exceeds the OVI trip threshold
The LTC4413-1/LTC4413-2 are intended for power control
applications that include low loss diode OR’ing, fully auto-
matic switchover from a primary to an auxiliary source of
power, microcontroller controlled switchover from a pri-
marytoanauxiliarysourceofpower,loadsharingbetween
two or more batteries, charging of multiple batteries from
a single charger and high side power switching.
(V
) then the wall adapter is disconnected via the
OVIH
external PFET, MP1. The OVI voltage can be monitored
(through a voltage divider if necessary) to determine if
an overvoltage condition is present.
Capacitor C2 is required to dynamically pull up on the
gate of PFET MP1 if a fast edge occurs at the wall adapter
input during a hot plug. In the event that capacitor C2 (or
the gate-to-source of MP1) is precharged below the OVI
rising threshold. When a high voltage spike occurs, the
OVP output cannot guarantee turning off MP1 before the
load voltage exceeds the absolute maximum voltage for
the LTC4413-2. This may occur in the event that the wall
adapter suddenly steps from 5.5V to a much higher value.
In this case, a Zener diode is recommended to keep the
output voltage to a safe level.
Dual Battery Load Sharing with Automatic Switchover
to a Wall Adapter with Overvoltage Protection
(LTC4413-2 Only)
An application circuit for dual battery load sharing with
automatic switchover of load from batteries to a wall
adapter is shown in Figure 2. When the wall adapter is not
present,whicheverbatteryhasthehighervoltageprovides
theloadcurrentuntilithasdischargedtothevoltageofthe
other battery. The load is shared between the two batter-
ies according to the capacity of each battery. The higher
capacity battery provides proportionally higher current to
the load. When a wall adapter input is applied, the output
voltage rises as the body diode in MP2 conducts. When
the output voltage is larger than the battery voltages, the
LTC4413 turns off and very little load current is drawn
from the batteries. At this time, the STAT pin pulls down
Automatic PowerPath Control
Figure 3 illustrates an application circuit for microcon-
troller monitoring and control of two power sources. The
microcontroller’s analog inputs (perhaps with the aid of
a resistor voltage divider) monitor each supply input and
theLTC4413-1status,andthencommandstheLTC4413-1
through the two ENBA/ENBB control inputs.
MP1
MP2
IRLML6402 IRLML6402
WALL
ADAPTER
INPUT
C1
R
STAT
0.10μF
JACK
470k
R1
1Ω
C2
10nF
MICROCONTROLLER
OPTIONAL
6.2V
DFLZ6V2-7
PRIMARY
POWER
BATA
+
INA
OUTA
1
2
10
9
INA
OUTA
STAT
1
2
10
9
TO LOAD
LOAD
C
SOURCE
A
IDEAL
IDEAL
10μF
ENBA
STAT
LTC4413-2
ENBA
STAT
R
R
A
1Ω
STAT
LTC4413-1
10nF
3
4
8
7
3
4
470k
GND
OVI
GND
STAT
OVP
ENBB
INB
OVP
OUTB
ENBB
INB
441312 F02
AUXILIARY
POWER
SOURCE
BATB
+
5
6
5
OUTB
6
C1: C1206C106K8PAC
C2: C0403C103K8PAC
OUT
C1
4.7μF
C
C
10μF
OUT
4.7μF
B
IDEAL
IDEAL
C
: C1206C475K8PAC
441312 F03
R
B
1Ω
Figure 2
Figure 3
441312fd
11
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Automatic Switchover from a Battery to an Auxiliary
Supply, or a Wall Adapter with Overvoltage Protection
Capacitor C2 is required to dynamically pull up on the
gate of MP1 if a fast edge occurs at the wall adapter input
during a hot plug. If the wall adapter voltage is precharged
when an overvoltage spike occurs, the OVP voltage may
not discharge capacitor C2 in time to protect the output.
In this event, a Zener diode is recommended to protect
the output node until MP1 is turned off.
Figure 4 illustrates an application circuit where the
LTC4413-2 is used to automatically switch over between
a battery, an auxiliary power supply and a wall adapter.
When the battery is supplying load current, OVP is at GND
and STAT is high. If a higher supply is applied to AUX, the
BAT will be disconnected from the load and the load is
powered from AUX. When a wall adapter is applied, the
body diode of MP2 forward biases. When the load voltage
exceeds the AUX (or BAT) voltage, the LTC4413-2 senses
this higher voltage and disconnects AUX (or BAT) from
the load. At the same time it pulls the STAT voltage to
GND, thereby turning on MP2. The load current is now
supplied from the wall adapter. If the wall adapter voltage
exceeds the OVI rising threshold, the OVP voltage rises
and turns off MP1, disconnecting the wall adapter from
the load. The output voltage collapses down to the AUX
(or BAT) voltage and the LTC4413-2 reconnects the load
to AUX (or BAT).
Multiple Battery Charging
Figure5illustratesanapplicationcircuitforautomaticdual
battery charging from a single charger. Whichever battery
has the lower voltage will receive the larger charging cur-
rent until both battery voltages are equal, then both are
charged.Whilebothbatteriesarechargingsimultaneously,
the higher capacity battery gets proportionally higher cur-
rent from the charger. For Li-Ion batteries, both batteries
achieve the float voltage minus the forward regulation
voltage of 15mV. This concept can apply to more than
two batteries. The STAT pin provides information as to
when the battery at OUTA is being charged. For intelligent
control, the ENBA/ENBB input pins can be used with a
microcontroller as shown in Figure 3.
MP1
MP2
IRLML6402 IRLML6402
WALL
ADAPTER
INPUT
C1
0.10μF
JACK
R1
1Ω
C2
10nF
OPTIONAL
6.2V
DFLZ6V2-7
BATTERY
CHARGER
INPUT
INA
OUTA
10
INA
OUTA
OVI
1
2
1
3
4
10
8
LOAD
BAT1
TO LOAD
+
+
V
CC
IDEAL
IDEAL
BAT
GND
ENBA
470k
LTC4413-1
LTC4413-2
STAT IS HIGH
WHEN BAT1 IS
CHARGING
3
4
9
6
7
9
R
STAT
ENBB
OVP
STAT
OUTB
GND
STAT
OVP
560k
ENBB
INB
10nF
OUTB
INB
5
5
2
6
STAT
LOAD
AUX
+
470k
IDEAL
IDEAL
C
OUT
BAT2
C1: C1206C106K8PAC
C2: C0403C103K8PAC
4.7μF
ENBA
441312 F05
441312 F04
470k
C
OUT
: C1206C475K8PAC
Figure 4
Figure 5
441312fd
12
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Automatic Switchover from a Battery to a Wall
Adapter and Charger with Overvoltage Protection
threshold, the OVP pin voltage rises, disconnecting both
the LTC4413-2 and the LTC4059 from potentially hazard-
ousvoltages. Whenthisoccurs, theloadvoltagecollapses
until it is below the BAT voltage causing the STAT voltage
to rise, disabling the battery charger. At the same time,
the LTC4413-2 automatically reconnects the battery to the
load. One major benefit of this circuit is that when a wall
adapter is present, the user may remove the battery and
replace it without disrupting the load.
Figure6illustratestheLTC4413-2performingthefunction
of automatically switching a load over from a battery to a
wall adapter while controlling an LTC4059 battery charger.
When no wall adapter is present, the LTC4413-2 connects
the load at OUTA from the Li-Ion battery at INA. In this
condition, the STAT voltage is high, thereby disabling
the battery charger. If a wall adapter of a higher voltage
than the battery is connected to MP1 (but below the OVI
threshold), the load voltage rises as the second ideal di-
ode conducts. As soon as the OUTA voltage exceeds the
INA voltage, the BAT is disconnected from the load and
the STAT voltage falls, turning on the LTC4059 battery
charger and beginning a charge cycle. If a high voltage
wall adapter is inadvertently attached above the OVI rising
Capacitor C2 is required to dynamically pull up on the
gate of MP1 if a fast edge occurs at the wall adapter input
during a hot plug. If the wall adapter voltage is precharged
when an overvoltage spike occurs, the OVP voltage may
not discharge capacitor C2 in time to protect the output.
In this event, a Zener diode is recommended to protect
the output node until MP1 is turned off.
STAT
9
STAT
R
STAT
560k
INA
OUTA
10
1
2
TO
LOAD
ENB
BAT
IDEAL
LTC4059
+
ENBA
LTC4413-2
ENBB
V
PROG
Li-Ion
100k
CC
4
3
MP1
IRLML6402
Li/CC GND
GND
INB
OUTB
5
6
WALL
ADAPTER
INPUT
D1
OPTIONAL
DFLZ6V2-7
C
OUT
C1
10μF
1μF
IDEAL
4.7μF
JACK
OVP
OVI
C2
10nF
441312 F06
Figure 6
441312fd
13
LTC4413-1/LTC4413-2
APPLICATIONS INFORMATION
Soft-Start Overvoltage Protection
an overvoltage event. When the overvoltage condition
ends, the OVP voltage drops slowly, depending on the
gate charge of the external PFET. This causes the external
In the event that a low power external PFET is used for
the external overvoltage protection device, care must be
taken to limit the power dissipation in the external PFET.
The operation of this circuit is identical to the “Automatic
Switchover from a Battery to a Wall Adapter” application
shown on the first page of this data sheet. Here, however,
the ideal diode from INA to INB is disabled by pulling up
on ENBA whenever an overvoltage condition is detected.
This channel is turned-off using a resistor connected to
OVP along with a 5.6V Zener diode, ensuring the abso-
lute maximum voltage at ENBA is not exceeded during
PFET to linger in a high R
region where it can dis-
DS(ON)
sipate a significant amount of heat depending on the load
current. To avoid dissipating heat in the external PFET, this
application delays turning on the ideal diode from INA to
OUTA, until the gate voltage of the external PFET drops
below V
, where the external PFET should safely be
ENBIL
out of the high R
region. This soft-start scheme can
DS(ON)
be used on either channel of the LTC4413-2.
FDR8508
WALL
INA
OUTA
IDEAL
ADAPTER
INPUT
C1
10μF
D1
OPTIONAL
C2
10nF
V
CC
R
STAT
R
ENBA
470k
560k
0.1μF
STAT
ENBA
STAT
OVI
D2
5.6V
LTC4413-2
1Ω
GND
ENBB
INB
OVP
OUTB
OVP
BAT
+
TO LOAD
C
OUT
IDEAL
4.7μF
441312 F07
C1: C0805C106K8PAC
C2: C0403C103K8PAC
OUT
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
OVP IS HIGH WHEN WALL ADAPTER
VOLTAGE > 6V
C
: C1206C475K8PAC
Figure 7
441312fd
14
LTC4413-1/LTC4413-2
PACKAGE DESCRIPTION
DD Package
10-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1699 Rev B)
0.70 p0.05
3.55 p0.05
2.15 p0.05 (2 SIDES)
1.65 p0.05
PACKAGE
OUTLINE
0.25 p 0.05
0.50
BSC
2.38 p0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
R = 0.125
0.40 p 0.10
TYP
6
10
3.00 p0.10
(4 SIDES)
1.65 p 0.10
(2 SIDES)
PIN 1
TOP MARK
(SEE NOTE 6)
(DD) DFN REV B 0309
5
1
0.25 p 0.05
0.50 BSC
0.75 p0.05
0.200 REF
2.38 p0.10
(2 SIDES)
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2).
CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
441312fd
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
15
LTC4413-1/LTC4413-2
TYPICAL APPLICATION
Automatic Switchover from a Battery to a Wall Adapter with Soft-Start Overvoltage Protection
FDR8508
WALL
ADAPTER
INPUT
INA
OUTA
C1
10μF
D1
OPTIONAL
IDEAL
C2
10nF
V
CC
R
STAT
R
ENBA
470k
560k
0.1μF
STAT
ENBA
STAT
D2
5.6V
LTC4413-2
1Ω
GND
OVI
ENBB
INB
OVP
OUTB
OVP
BAT
+
TO LOAD
C
OUT
IDEAL
4.7μF
441312 F07
C1: C0805C106K8PAC
C2: C0403C103K8PAC
OUT
STAT IS HIGH WHEN WALL ADAPTER IS
SUPPLYING LOAD CURRENT
OVP IS HIGH WHEN WALL ADAPTER
VOLTAGE > 6V
C
: C1206C475K8PAC
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC1558/LTC1559
Backup Battery Controller with Programmable Output
Adjustable Backup Voltage from 1.2V NiCd Button Cell, Includes Boost
Converter
LTC1998
LTC4054
2.5μA, 1% Accurate Programmable Battery Detector
Adjustable Trip Voltage/Hysteresis, ThinSOT™
800mA Standalone Linear Li-Ion Battery Charger with
Thermal Regulation in ThinSOT
No External MOSFET, Sense Resistor or Blocking Diode Required,
Charge Current Monitor for Gas Guaging, C/10 Charge Termination
LTC4350
LTC4411
Hot Swappable Load Share Controller
Allows N + 1 Redundant Supply, Equally Loads Multiple Power
Supplies Connected in Parallel
2.6A Low Loss Ideal Diode in ThinSOT
No External MOSFET, Automatic Switching Between DC Sources,
Simplified Load Sharing
LTC4412/LTC4412HV PowerPath Controller in ThinSOT
More Efficient than Diode OR’ing, Automatic Switching Between DC
Sources, Simplified Load Sharing, 3V ≤ V ≤ 28V, 3V ≤ V ≤ 36V (HV)
IN
IN
LTC4413
LTC4414
Lower Quiescent Current with Slower Response Time
Dual 2.6A, 2.5V to 5.5V, Ideal Diodes in 3mm × 3mm DFN
36V, Low Loss PowerPath Controller for Large PFETs
Drives Large Q PFETs, Very Low Loss Replacement for Power Supply
G
O’Ring Diodes, 3.5V to 36V AC/DC Adapter Voltage Range, 8-Lead
MSOP Package
ThinSOT is a trademark of Linear Technology Corporation.
441312fd
LT 0909 REV D • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
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●
© LINEAR TECHNOLOGY CORPORATION 2006
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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