LTC4440ES6-5#TRM [Linear]
LTC4440-5 - High Speed, High Voltage, High Side Gate Driver; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C;型号: | LTC4440ES6-5#TRM |
厂家: | Linear |
描述: | LTC4440-5 - High Speed, High Voltage, High Side Gate Driver; Package: SOT; Pins: 6; Temperature Range: -40°C to 85°C 栅 驱动 光电二极管 接口集成电路 驱动器 |
文件: | 总12页 (文件大小:204K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LTC4440
High Speed, High Voltage
High Side Gate Driver
U
FEATURES
DESCRIPTIO
The LTC®4440 is a high frequency high side N-channel
MOSFET gate driver that is designed to operate in applica-
tions with VIN voltages up to 80V. The LTC4440 can also
withstand and continue to function during 100V VIN tran-
sients. The powerful driver capability reduces switching
losses in MOSFETs with high gate capacitances. The
LTC4440’s pull-up has a peak output current of 2.4A and
its pull-down has an output impedance of 1.5Ω.
■
Wide Operating VIN Range: Up to 80V
■
Rugged Architecture Tolerant of 100V VIN
Transients
Powerful 1.5Ω Driver Pull-Down
■
■
Powerful 2.4A Peak Current Driver Pull-Up
■
7ns Fall Time Driving 1000pF Load
■
10ns Rise Time Driving 1000pF Load
■
Drives Standard Threshold MOSFETs
■
TTL/CMOS Compatible Inputs with Hysteresis
The LTC4440 features supply independent TTL/CMOS
compatible input thresholds with 350mV of hysteresis.
The input logic signal is internally level-shifted to the
bootstrapped supply, which may function at up to 115V
above ground.
■
Input Thresholds are Independent of Supply
■
Undervoltage Lockout
Low Profile (1mm) SOT-23 (ThinSOT)TM and
■
Thermally Enhanced 8-Pin MSOP Packages
U
The LTC4440 contains both high side and low side under-
voltage lockout circuits that disable the external MOSFET
when activated.
APPLICATIO S
■
Telecommunications Power Systems
■
Distributed Power Architectures
The LTC4440 is available in the low profile (1mm) SOT-23
and thermally enhanced 8-lead MSOP packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
Protected by U.S. Patents, including 6677210.
■
Server Power Supplies
High Density Power Modules
■
U
TYPICAL APPLICATIO
Synchronous Phase-Modulated Full-Bridge Converter
V
IN
36V TO 72V
100V PEAK TRANSIENT
(ABS MAX)
LTC4440 Driving a 1000pF
Capacitive Load
V
CC
8V TO 15V
LTC4440
BOOST
INPUT
(INP)
2V/DIV
V
CC
INP
TG
TS
GND
OUTPUT
(TG – TS)
5V/DIV
LTC4440
V
BOOST
TG
V
CC
CC
•
•
LTC3722-1
INP
GND
TS
10ns/DIV
4440 F02
4440 TA01
4440f
1
LTC4440
W W U W
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Peak Output Current < 1µs (TG) ............................... 4A
Driver Output TG (with Respect to TS) ..... –0.3V to 15V
Operating Ambient Temperature Range
(Note 2) .............................................. –40°C to 85°C
Junction Temperature (Note 3)............................ 125°C
Storage Temperature Range ................. –65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
Supply Voltage
VCC ....................................................... –0.3V to 15V
BOOST – TS ......................................... –0.3V to 15V
INP Voltage............................................... –0.3V to 15V
BOOST Voltage (Continuous) ................... –0.3V to 95V
BOOST Voltage (100ms) ........................ –0.3V to 115V
TS Voltage (Continuous) ............................. –5V to 80V
TS Voltage (100ms)................................... –5V to 100V
U
W U
PACKAGE/ORDER INFORMATION
ORDER PART
NUMBER
ORDER PART
NUMBER
TOP VIEW
TOP VIEW
INP
GND
1
2
3
4
8 TS
7 TG
6 BOOST
5 NC
9
V
1
6 BOOST
5 TG
CC
LTC4440EMS8E
LTC4440ES6
V
CC
GND 2
INP 3
GND
4 TS
MS8E PACKAGE
MS8E
S6
8-LEAD PLASTIC MSOP
S6 PACKAGE
TJMAX = 125°C, θJA = 40°C/W (NOTE 4)
PART MARKING
PART MARKING
6-LEAD PLASTIC SOT-23
EXPOSED PAD IS GND (PIN 9)
MUST BE SOLDERED TO PCB
TJMAX = 125°C, θJA = 230°C/W
LTF9
LTZY
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted.
SYMBOL PARAMETER
Main Supply (V
CONDITIONS
MIN
TYP
MAX
UNITS
)
CC
I
DC Supply Current
Normal Operation
UVLO
VCC
INP = 0V
250
25
400
80
µA
µA
V
CC
< UVLO Threshold (Falling) – 0.1V
UVLO
Undervoltage Lockout Threshold
V
V
Rising
Falling
●
●
5.7
5.4
6.5
6.2
7.3
7.0
V
V
CC
CC
Hysteresis
300
mV
Bootstrapped Supply (BOOST – TS)
I
DC Supply Current
Normal Operation
UVLO
BOOST
INP = 0V
110
86
180
170
µA
µA
V
– V < UVLO
– 0.1V, V = INP = 5V
HS(FALLING) CC
BOOST
TS
UVLO
Undervoltage Lockout Threshold
V
V
– V Rising
●
●
6.75
6.25
7.4
6.9
7.95
7.60
V
V
HS
BOOST
TS
– V Falling
BOOST
TS
Hysteresis
500
mV
Input Signal (INP)
V
V
V
High Input Threshold
Low Input Threshold
Input Voltage Hysteresis
Input Pin Bias Current
INP Ramping High
INP Ramping Low
●
●
1.3
1.6
2
V
V
V
IH
IL
0.85
1.25
1.6
– V
0.350
±0.01
IH
IL
I
±2
µA
INP
4440f
2
LTC4440
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = VBOOST = 12V, VTS = GND = 0V, unless otherwise noted.
SYMBOL PARAMETER
Output Gate Driver (TG)
CONDITIONS
MIN
TYP
MAX
UNITS
V
V
High Output Voltage
I
I
= –10mA, V = V
– V
TG
0.7
150
2.4
1.5
V
mV
A
OH
OL
TG
TG
OH
BOOST
Low Output Voltage
= 100mA
●
●
●
220
2.2
I
Peak Pull-Up Current
Output Pull-Down Resistance
1.7
PU
R
Ω
DS
Switching Timing
t
Output Rise Time
10% – 90%, C = 1nF
10
100
ns
ns
r
L
10% – 90%, C = 10nF
L
t
Output Fall Time
10% – 90%, C = 1nF
7
70
ns
ns
f
L
10% – 90%, C = 10nF
L
t
t
Output Low-High Propagation Delay
Output High-Low Propagation Delay
●
●
30
28
65
65
ns
ns
PLH
PHL
Note 3: T is calculated from the ambient temperature T and power
dissipation PD according to the following formula:
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
J
A
T = T + (PD • θ °C/W)
Note 4: Failure to solder the exposed back side of the MS8E package to
the PC board will result in a thermal resistance much higher than 40°C/W.
Note 2: The LTC4440 is guaranteed to meet performance specifications
from 0°C to 70°C. Specifications over the –40°C to 85°C operating
temperature range are assured by design, characterization and correlation
with statistical process controls.
J
A
JA
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VCC Supply Quiescent Current
vs Voltage
BOOST – TS Supply Quiescent
Current vs Voltage
Output Low Voltage (VOL
)
vs Supply Voltage
300
250
200
150
100
50
500
450
170
165
160
155
150
145
140
T
= 25°C
T = 25°C
A
I
= 100mA
A
TG
A
INP = 0V
T
= 25°C
400
350
300
INP = V
CC
INP = V
CC
250
200
150
100
50
INP = 0V
0
0
0
5
10
15
0
10
BOOST – TS SUPPLY VOLTAGE (V)
15
8
9
10
11
12
13
14
15
5
V
SUPPLY VOLTAGE (V)
BOOST – TS SUPPLY VOLTAGE (V)
CC
4440 G01
4440 G02
4440 G03
4440f
3
LTC4440
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Output High Voltage (VOH
)
Input Thresholds (INP)
vs Supply Voltage
VCC Supply Current
at TTL Input Levels
vs Supply Voltage
2.0
1.8
15
380
360
340
320
300
280
260
240
220
200
T
= 25°C
A
T = 25°C
A
T
A
= 25°C
14
13
V
IH
(INPUT HIGH THRESHOLD)
INP = 2V
I
TG
= –1mA
1.6
1.4
12
11
10
9
I
TG
= –10mA
V
IL
(INPUT LOW THRESHOLD)
I
TG
= –100mA
INP = 0.8V
1.2
1.0
0.8
8
7
7
9
11
13
15
9
10
12
13
14
15
12
SUPPLY VOLTAGE (V)
8
11
8
10
V
CC
14
V
SUPPLY VOLTAGE (V)
BOOST – TS SUPPLY VOLTAGE (V)
CC
4440 G05
4440 G04
4440 G06
VCC Supply Current (VCC = 12V)
vs Temperature
VCC Undervoltage Lockout
Thresholds vs Temperature
2MHz Operation
6.55
6.50
300
250
INPUT
(INP)
INP = 0V
5V/DIV
RISING THRESHOLD
6.45
6.40
6.35
6.30
6.25
6.20
6.15
INP = 12V
200
150
100
50
OUTPUT
(TG)
5V/DIV
FALLING THRESHOLD
V
CC = 12V
250ns/DIV
4440 G07
0
0
30
60
90
120
0
30
60
90
120
–60 –30
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G08
4440 G09
Boost Supply (BOOST – TS)
Undervoltage Lockout Thresholds
vs Temperature
Boost Supply Current
vs Temperature
Input Threshold vs Temperature
7.6
7.5
7.4
7.3
7.2
7.1
7.0
6.9
6.8
6.7
500
450
400
350
300
250
200
150
100
50
2.0
1.8
INP = 12V
RISING THRESHOLD
V
(V = 12V)
IH CC
V
(V = 15V)
IH CC
1.6
1.4
1.2
1.0
0.8
V
(V = 8V)
IH CC
V
(V = 12V)
IL CC
V (V = 15V)
IL CC
V
(V = 8V)
IL CC
FALLING THRESHOLD
INP = 0V
0
0
30
60
90
120
0
30
60
90
120
–60 –30
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G10
4440 G12
4440 G11
4440f
4
LTC4440
U W
TYPICAL PERFOR A CE CHARACTERISTICS
Input Threshold Hysteresis
vs Temperature
Peak Driver (TG) Pull-Up Current
vs Temperature
500
480
460
440
420
400
380
360
340
320
300
3.0
2.9
2.8
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
BOOST – TS = 15V
V
-V (V = 12V)
IH IL CC
V -V (V = 15V)
IH IL CC
BOOST – TS = 12V
V
-V (V = 8V)
IH IL CC
0
30
60
90
120
0
30
60
90
120
–60 –30
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G13
4440 G14
Output Driver Pull-Down
Resistance vs Temperature
Propagation Delay vs Temperature
(VCC = BOOST = 12V)
45
40
35
30
25
20
15
10
5
3.0
2.5
t
BOOST – TS = 12V
BOOST – TS = 8V
PLH
2.0
1.5
1.0
0.5
0
t
PHL
BOOST – TS = 15V
0
0
30
60
90
120
–60 –30
0
30
60
90
120
–60 –30
TEMPERATURE (°C)
TEMPERATURE (°C)
4440 G16
4440 G15
U
U
U
PI FU CTIO S
SOT-23 Package
VCC (Pin 1): Chip Supply. This pin powers the internal low
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
TG (Pin 5): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
BOOST (Pin 6): High Side Bootstrapped Supply. An exter-
nal capacitor should be tied between this pin and TS
(Pin 4). Normally, abootstrapdiodeisconnectedbetween
VCC (Pin 1) and this pin. Voltage swing at this pin is from
VCC – VD to VIN + VCC – VD, where VD is the forward voltage
drop of the bootstrap diode.
GND (Pin 2): Chip Ground.
INP (Pin 3): Input Signal. TTL/CMOS compatible input
referenced to GND (Pin 2).
TS (Pin 4): Top (High Side) Source Connection.
4440f
5
LTC4440
U
U
U
PI FU CTIO S
Exposed Pad MS8E Package
INP (Pin 1): Input Signal. TTL/CMOS compatible input
BOOST (Pin 6): High Side Bootstrapped Supply. An exter-
nal capacitor should be tied between this pin and TS
(Pin 8). Normally, abootstrapdiodeisconnectedbetween
VCC (Pin 3) and this pin. Voltage swing at this pin is from
referenced to GND (Pin 2).
GND (Pins 2, 4): Chip Ground.
V
CC (Pin 3): Chip Supply. This pin powers the internal low
V
CC – VD to VIN + VCC – VD, where VD is the forward voltage
side circuitry. A low ESR ceramic bypass capacitor should
be tied between this pin and the GND pin (Pin 2).
drop of the bootstrap diode.
TG (Pin 7): High Current Gate Driver Output (Top Gate).
This pin swings between TS and BOOST.
NC (Pin 5): No Connect. No connection required. For
convenience, this pin may be tied to Pin 6 (BOOST) on the
application board.
TS (Pin 8): Top (High Side) Source Connection.
Exposed Pad (Pin 9): Ground. Must be electrically con-
nected to Pins 2 and 4 and soldered to PCB ground for
optimum thermal performance.
W
BLOCK DIAGRA
V
IN
UP TO 80V,
TRANSIENT
UP TO 100V
BOOST
HIGH SIDE
UNDERVOLTAGE
LOCKOUT
V
CC
UNDERVOLTAGE
LOCKOUT
TG
TS
8V TO 15V
GND
BOOST
INP
LEVEL SHIFTER
4440 BD
GND
TS
W U
W
TI I G DIAGRA
INPUT RISE/FALL TIME <10ns
V
IH
INPUT (INP)
V
IL
90%
10%
OUTPUT (TG)
t
t
f
r
t
t
PHL
PLH
4440 TD
4440f
6
LTC4440
W U U
U
APPLICATIO S I FOR ATIO
V
BOOST
IN
Overview
UP TO 100V
The LTC4440 receives a ground-referenced, low voltage
digital input signal to drive a high side N-channel power
MOSFET whose drain can float up to 100V above ground,
eliminating the need for a transformer between the low
voltage control signal and the high side gate driver. The
LTC4440 normally operates in applications with input
supply voltages (VIN) up to 80V, but is able to withstand
and continue to function during 100V, 100ms transients
on the input supply.
LTC4440
C
Q1
N1
GD
GS
TG
POWER
MOSFET
C
LOAD
INDUCTOR
4440 F03
–
V
TS
Figure 3. Capacitance Seen by TG During Switching
The powerful output driver of the LTC4440 reduces the
switching losses of the power MOSFET, which increase
with transition time. The LTC4440 is capable of driving a
1nF load with 10ns rise and 7ns fall times using a
bootstrapped supply voltage VBOOST–TS of 12V.
the power MOSFET’s gate is pulled low (gate shorted to
source through N1) by the LTC4440, its source (TS) is
pulled low by its load (e.g., an inductor or resistor). The
slew rate of the source/gate voltage causes current to flow
back to the MOSFET’s gate through the gate-to-drain
capacitance (CGD). If the MOSFET driver does not have
sufficient sink current capability (low output impedance),
the current through the power MOSFET’s CGD can mo-
mentarily pull the gate high, turning the MOSFET back on.
Input Stage
TheLTC4440employsTTL/CMOScompatibleinputthresh-
oldsthatallowalowvoltagedigitalsignaltodrivestandard
power MOSFETs. The LTC4440 contains an internal volt-
ageregulatorthatbiasestheinputbuffer,allowingtheinput
thresholds (VIH = 1.6V, VIL = 1.25V) to be independent of
variations in VCC. The 350mV hysteresis between VIH and
VIL eliminates false triggering due to noise during switch-
ingtransitions. However, careshouldbetakentokeepthis
pinfromanynoisepickup,especiallyinhighfrequency,high
voltage applications. The LTC4440 input buffer has a high
input impedance and draws negligible input current, sim-
plifying the drive circuitry required for the input.
A similar scenario exists when the LTC4440 is used to
drive a low side MOSFET. When the low side power
MOSFET’s gate is pulled low by the LTC4440, its drain
voltage is pulled high by its load (e.g., inductor or resis-
tor). The slew rate of the drain voltage causes current to
flow back to the MOSFET’s gate through its gate-to-drain
capacitance. If the MOSFET driver does not have sufficient
sink current capability (low output impedance), the cur-
rent through the power MOSFET’s CGD can momentarily
pull the gate high, turning the MOSFET back on.
Output Stage
Rise/Fall Time
A simplified version of the LTC4440’s output stage is
shown in Figure 3 . The pull-down device is an N-channel
MOSFET (N1) and the pull-up device is an NPN bipolar
junctiontransistor(Q1).Theoutputswingsfromthelower
rail (TS) to within an NPN VBE (~0.7V) of the positive rail
(BOOST). This large voltage swing is important in driving
external power MOSFETs, whose RDS(ON) is inversely
proportional to its gate overdrive voltage (VGS – VTH).
Since the power MOSFET generally accounts for the
majority of the power loss in a converter, it is important to
quickly turn it on or off, thereby minimizing the transition
time in its linear region. The LTC4440 can drive a 1nF load
with a 10ns rise time and 7ns fall time.
The LTC4440’s rise and fall times are determined by the
peak current capabilities of Q1 and N1. The predriver that
drivesQ1andN1usesanonoverlappingtransitionscheme
to minimize cross-conduction currents. N1 is fully turned
off before Q1 is turned on and vice versa.
The LTC4440’s peak pull-up (Q1) current is 2.4A while the
pull-down (N1) resistance is 1.5Ω. The low impedance of
N1 is required to discharge the power MOSFET’s gate
capacitance during high-to-low signal transitions. When
4440f
7
LTC4440
W U U
U
APPLICATIO S I FOR ATIO
Power Dissipation
Undervoltage Lockout (UVLO)
To ensure proper operation and long-term reliability, the
LTC4440mustnotoperatebeyonditsmaximumtempera-
ture rating. Package junction temperature can be calcu-
lated by:
The LTC4440 contains both low side and high side under-
voltage lockout detectors that monitor VCC and the
bootstrapped supply VBOOST–TS. When VCC falls below
6.2V, theinternalbufferisdisabledandtheoutputpinOUT
is pulled down to TS. When VBOOST – TS falls below 6.9V,
OUT is pulled down to TS. When both supplies are under-
voltage, OUT is pulled low to TS and the chip enters a low
current mode, drawing approximately 25µA from VCC and
86µA from BOOST.
TJ = TA + PD (θJA)
where:
TJ = Junction Temperature
TA = Ambient Temperature
PD = Power Dissipation
θJA = Junction-to-Ambient Thermal Resistance
Bypassing and Grounding
The LTC4440 requires proper bypassing on the VCC and
VBOOST–TSsuppliesduetoitshighspeedswitching(nano-
seconds) and large AC currents (Amperes). Careless
component placement and PCB trace routing may cause
excessive ringing and under/overshoot.
Power dissipation consists of standby and switching
power losses:
PD = PSTDBY + PAC
where:
To obtain the optimum performance from the LTC4440:
PSTDBY = Standby Power Losses
PAC = AC Switching Losses
A. Mount the bypass capacitors as close as possible
between the VCC and GND pins and the BOOST and TS
pins. The leads should be shortened as much as pos-
sible to reduce lead inductance.
TheLTC4440consumesverylittlecurrentduringstandby.
The DC power loss at VCC = 12V and VBOOST–TS = 12V is
only (250µA + 110µA)(12V) = 4.32mW.
B. Use a low inductance, low impedance ground plane to
reduceanygrounddropandstraycapacitance.Remem-
ber that the LTC4440 switches >2A peak currents and
anysignificantgrounddropwilldegradesignalintegrity.
AC switching losses are made up of the output capacitive
load losses and the transition state losses. The capacitive
load losses are primarily due to the large AC currents
needed to charge and discharge the load capacitance
during switching. Loadlosses fortheoutputdriverdriving
a pure capacitive load COUT would be:
C. Plan the power/ground routing carefully. Know where
the large load switching current is coming from and
going to. Maintain separate ground return paths for the
input pin and the output power stage.
2
Load Capacitive Power = (COUT)(f)(VBOOST–TS
)
The power MOSFET’s gate capacitance seen by the driver
output varies with its VGS voltage level during switching.
A power MOSFET’s capacitive load power dissipation can
be calculated using its gate charge, QG. The QG value
corresponding to the MOSFET’s VGS value (VCC in this
case) can be readily obtained from the manufacturer’s QG
vs VGS curves:
D. Keepthecoppertracebetweenthedriveroutputpinand
the load short and wide.
E. When using the MS8E package, be sure to solder the
exposed pad on the back side of the LTC4440 package
to the board. Correctly soldered to a 2500mm2 double-
sided 1oz copper board, the LTC4440 has a thermal
resistance of approximately 40°C/W. Failure to make
good thermal contact between the exposed back side
and the copper board will result in thermal resistances
far greater than 40°C/W.
Load Capacitive Power (MOS) = (VBOOST–TS)(QG)(f)
Transition state power losses are due to both AC currents
required to charge and discharge the driver’s internal
nodal capacitances and cross-conduction currents in the
internal gates.
4440f
8
LTC4440
U
TYPICAL APPLICATIO S
•
•
•
•
•
•
•
•
•
•
•
4440f
9
LTC4440
U
TYPICAL APPLICATIO S
•
•
•
•
•
•
•
•
E F F I C I E N C Y ( % )
4440f
10
LTC4440
U
PACKAGE DESCRIPTION
MS8E Package
8-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1662)
3.00 ± 0.102
(.118 ± .004)
(NOTE 3)
0.889 ± 0.127
(.035 ± .005)
2.794 ± 0.102
(.110 ± .004)
0.52
(.0205)
REF
2.06 ± 0.102
(.081 ± .004)
1
8
7 6
5
1.83 ± 0.102
(.072 ± .004)
5.23
(.206)
MIN
3.20 – 3.45
(.126 – .136)
2.083 ± 0.102
(.082 ± .004)
3.00 ± 0.102
(.118 ± .004)
(NOTE 4)
4.90 ± 0.152
(.193 ± .006)
DETAIL “A”
0.254
(.010)
0° – 6° TYP
0.65
(.0256)
BSC
0.42 ± 0.038
(.0165 ± .0015)
TYP
GAUGE
PLANE
1
2
3
4
8
0.53 ± 0.152
(.021 ± .006)
BOTTOM VIEW OF
EXPOSED PAD OPTION
1.10
(.043)
MAX
0.86
(.034)
REF
RECOMMENDED SOLDER PAD LAYOUT
DETAIL “A”
0.18
(.007)
SEATING
PLANE
NOTE:
0.22 – 0.38
(.009 – .015)
TYP
0.127 ± 0.076
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
(.005 ± .003)
0.65
(.0256)
BSC
MSOP (MS8E) 0603
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
S6 Package
6-Lead Plastic SOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4440f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will notinfringe onexisting patent rights.
11
LTC4440
U
TYPICAL APPLICATIO
LTC3723-2/LTC4440/LTC3901 240W 42V-56VIN to Unregulated 12V Half-Bridge Converter
L1
0.56µH
V
IN
V
E
V
IN
48V
IN
–V
IN
2
7
9
V
1µF
100V
1µF
OUT
L2 0.22µH
1µF
1µF
100V
11V
1
V
100V
100V
D1
OUT
T2
1500pF
100V
V
F
20Ω 1W
70(980µH):1
+
C2
180µF
16V
4
3
11
+
CS
V
CC
3
6
5
1
8
7
A
INP BOOST
LTC4440ES6
TG
1µF
100V
1µF
100V
1µF
Si7370DP
Si7370DP
×2
Si7852DP
3
5
×2
×2
GND TS
–V
OUT
2
4
0.22µF
C1
2.2nF
250V
V
V
E
F
–V
OUT
D2
D3
12V
4.7k
1/4W
4.7k
1/4W
1
6
B
L3
1mH
+
C3
68µF
T1
5:4:4:2:2
Si7852DP
×2
10k 3k
10k 3k
V
12V
MMBT3904
11V
IN
11
+
12 14 15
–
6
5
2
3
16
A
6
T3
+
–
33.2k
100Ω
MMBT3904
V
CSF
CSF MF MF2 CSE
CSE ME ME2 V
OUT
CC
4
1(1.5mH):0.5
1
15k
1/4W
2
1
4
9
120Ω
LTC3901EGN
DRVA DRVB
SYNC
PV
SDRB
CC
5
1k
0.1µF
100Ω
5
V
CC
GND PGND GND2 PGND2
10 13
TIMER
7
22Ω
3
8
1µF
1µF
LTC3723EGN-2
215k
SDRA
8
4
10V
MMBZ5240B
15
11
220pF
UVLO
DPRG
12
COMP
330pF
+
B
CS
0.22µF
V
RAMP
9
C
SPRG GND CS SS FB
T
4440 TA04
REF
1
1µF, 100V TDK C4532X7R2A105M
C1: MURATA DE2E3KH222MB3B
C2: SANYO 16SP180M
C3: AVX TPSE686M020R0150
D1-D3: BAS21
D4, D5: MMBD914
8
16
7
10 14 13
–V
1µF
100pF
OUT
D4
D5
1k
62k
1µF
150pF
10k
2N7002
4.7k
30.1k
0.47µF
330pF
0.47µF
470pF
7.5Ω 7.5Ω
L1: COILCRAFT DO1813P-561HC
L2: SUMIDA CDEP105-0R2NC-50
L3: COILCRAFT DO1608C-105
T1: PULSE PA0801.005
12V
MMBZ5242B
T2: PULSE P8207
T3: PULSE PA0785
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
4.5V to 18V Supply Range
LTC1155
Dual Micropower High/Low Side Drivers with
Internal Charge Pump
LT®1161
LTC1163
LT1339
Quad Protected High Side MOSFET Driver
Triple 1.8V to 6V High Side MOSFET Driver
High Power Synchronous DC/DC Controller
Isolated RS485 Transceiver
8V to 48V Supply Range, t = 200µs, t = 28µs
ON OFF
1.8V to 6V Supply Range, t = 95µs, t = 45µs
ON
OFF
Current Mode Operation Up to 60V, Dual N-Channel Synchronous Drive
2500V of Isolation Between Line Transceiver and Logic Level Interface
LTC1535
RMS
LTC1693 Family High Speed Dual MOSFET Drivers
LT3010/LT3010-5 50mA, 3V to 80V Low Dropout Micropower Regulators
1.5A Peak Output Current, 4.5V ≤ V ≤ 13.2V
IN
Low Quiescent Current (30µA), Stable with Small (1µF) Ceramic Capacitor
LT3430
High Voltage, 3A, 200kHz Step-Down Switching Regulator Input Voltages Up to 60V, Internal 0.1Ω Power Switch, Current Mode
Architecture, 16-Pin Exposed Pad TSSOP Package
LTC3722-1/
LTC3722-2
Synchronous Dual Mode Phase Modulated Full-Bridge
Controllers
Adaptive Zero Voltage Switching, High Output Power Levels
(Up to Kilowatts)
LTC3723-1/
LTC3723-2
Synchronous Push-Pull PWM Controllers
Current Mode or Voltage Mode Push-Pull Controllers
LT3781/LTC1698 36V to 72V Input Isolated DC/DC Converter Chip Set
Synchronous Rectification; Overcurrent, Overvoltage, UVLO Protection;
Power Good Output Signal; Voltage Margining; Compact Solution
LT3804
Secondary Side Dual Output Controller with Opto Driver
Regulates Two Secondary Outputs, Optocoupler Feedback Divider and
Second Output Synchronous Driver Controller
LTC3900
LTC3901
Synchronous Rectifier Driver for Forward Converters
Programmable Time Out, Reverse Inductor Current Sense
Programmable Time Out, Reverse Inductor Current Sense
Secondary Side Synchronous Driver for Push-Pull and
Full-Bridge Converters
LTC4441
6A MOSFET Driver
Adjustable Gate Drive from 5V to 8V, 5V ≤ V ≤ 28V
IN
4440f
LT/TP 1004 1K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
12
©LINEAR TECHNOLOGY CORPORATION 2003
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
相关型号:
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明