LTC5507_技术文档

LT5517

40MHz to 900MHz

Quadrature Demodulator

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FEATURES

DESCRIPTIO

The LT^®5517 is a 40MHz to 900MHz quadrature demodu-

lator optimized for high linearity receiver applications

where high dynamic range is important. It is suitable for

communications receivers where an RF or IF signal is

directly converted into I and Q baseband signals with a

bandwidth up to 130MHz. The LT5517 incorporates bal-

ancedIandQmixers, LObufferamplifiersandaprecision,

broadband quadrature generator derived from an on-chip

divide-by-two circuit.

■

RF Input Frequency Range: 40MHz to 900MHz

■

High IIP3: 21dBm at 800MHz

■

High IIP2: 58dBm at 800MHz

■

I/Q Gain Mismatch: 0.3dB Max

■

I/Q Phase Mismatch: 0.7°

■

Noise Figure: 12.4dB at 800MHz

■

Conversion Gain: 3.3dB at 800MHz

■

Baseband Bandwidth: 130MHz

■

Single Ended, 50Ω Matched 2XLO Input

■

Shutdown Mode

The superior linearity and low noise performance of the

LT5517 is achieved across its full frequency range. A well-

balanceddivide-by-twocircuitgeneratesprecisionquadra-

ture LO carriers to drive the I mixer and the Q mixer.

Consequently, the outputs of the I-channel and the

Q-channelarewellmatchedinamplitude,andtheirphases

are 90° apart. The LT5517 also provides excellent 50Ω

impedance matching at the 2XLO port across its entire

frequency range.

■

16-Lead QFN (4mm × 4mm) Package

with Exposed Pad

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APPLICATIO S

■

Wireless Infrastructure

■

High Linearity Direct Conversion I/Q Receiver

■

High Linearity I/Q Demodulator

, LTC and LT are registered trademarks of Linear Technology Corporation.

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TYPICAL APPLICATIO

I/Q Output Power, IM3, IM2

vs RF Input Power

5V

BPF

20

V

CC

LT5517

+

RF

LNA

+

LPF

I

OUT

0

VGA

P

OUT

–

–20

–40

0°

T

= 25°C

2XLO

= 1602MHz

= 799.9MHz

= 800.1MHz

A

–

P

f

= –10dBm

2XLO

RF1

RF2

DSP

IM3

f

–60

–80

+

–

LPF

Q

OUT

IM2

2xLO

EN

2xLO

INPUT

÷2

OUT

90°

ENABLE

5517 F01

–100

–18

–14

–10

–6

–2

2

RF INPUT POWER (dBm)

Figure 1. High Signal-Level I/Q Demodulator for 450MHz Infrastructure Receiver

5517 F01b

5517f

1

LT5517

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ABSOLUTE AXI U RATI GS

PACKAGE/ORDER I FOR ATIO

(Note 1)

ORDER PART

TOP VIEW

Power Supply Voltage ............................................ 5.5V

Enable Voltage ....................................................0V, V_CC

2XLO Voltage (10dBm Equivalent) .......................... ±1V

RF⁺to RF^–Differential Voltage

(10dBm Equivalent) ................................................. ±2V

Operating Ambient Temperature..............–40°C to 85°C

Storage Temperature Range ................. –65°C to 125°C

Maximum Junction Temperature .......................... 125°C

NUMBER

16 15 14 13

LT5517EUF

GNDRF

1

2

3

4

12

V

CC

+

RF

11 GND

17

–

RF

2XLO

GND

10

9

GNDRF

UF PART

MARKING

5

6

7

8

UF PACKAGE

16-LEAD (4mm × 4mm) PLASTIC QFN

EXPOSED PAD (PIN 17) IS GND,

MUST BE SOLDERED TO PCB

5517

T_JMAX= 125°C, θ_JA= 37°C/W

Consult LTC Marketing for parts specified with wider operating temperature ranges.

AC ELECTRICAL CHARACTERISTICS

T_A= 25°C. V_CC= 5V, EN = V_CC, f_RF1= 799.9MHz, f_RF2= 800.1MHz,

f_2XLO= 1602MHz, P_2XLO= –10dBm, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)

PARAMETER

CONDITIONS

MIN

TYP

40 to 900

80 to 1800

–15 to 0

20

MAX

UNITS

MHz

dBm

dB

RF Frequency Range

2XLO Frequency Range

2XLO Power

2XLO Port Return Loss

Conversion Gain

Internally Matched to a 50Ω Source

Voltage Gain, Load Impedance = 1kΩ

–40°C to 85°C

0

3.3

dB

Gain Variation vs Temperature

Noise Figure

0.01

12.4

21

dB/°C

dB

Input 3rd Order Intercept

Input 2nd Order Intercept

Input 1dB Compression

Baseband Bandwidth

I/Q Gain Mismatch

I/Q Phase Mismatch

Output Impedance

2XLO to RF Leakage

LO to RF Leakage

2-Tone, –10dBm/Tone, ∆f = 200kHz

dBm

MHz

dB

58

10

130

(Note 4)

–0.3

–3.5

0.03

0.7

0.3

3.5

(Note 4)

deg

Differential

120

Ω

–69

dBm

dB

–80

RF to 2XLO Isolation

63

5517f

2

LT5517

DC ELECTRICAL CHARACTERISTICS

T_A= 25°C. V_CC= 5V unless otherwise noted.

PARAMETER

CONDITIONS

MIN

4.5

70

TYP

MAX

5.25

110

20

UNITS

V

Supply Voltage

Supply Current

Shutdown Current

Turn-On Time

90

0.1

mA

µA

ns

EN = LOW

(Note 5)

200

300

Turn-Off Time

ns

EN = HIGH (On)

EN = LOW (Off)

EN Input Current

Output DC Offset Voltage

1.6

V

1.3

30

V

= 5V

2

µA

mV

ENABLE

f

= 1602MHz, P = –10dBm

0.5

LO

+

–

+

–

( I

– I

, Q

– Q

OUT

)

OUT

Output DC Offset Variation vs Temperature

–40°C to 85°C

7

µV/°C

Note 1: Absolute Maximum Ratings are those values beyond which the life

Note 4: Measured at P

= –10dBm and output frequency = 1MHz.

2XLO

of a device may be impaired.

Note 5: Turn ON and Turn OFF times are based on rise and fall times of the

Note 2: Tests are performed as shown in the configuration of Figure 2.

output baseband voltage with RF input power of –10dBm.

Note 3: Specifications over the –40°C to 85°C temperature range are

assured by design, characterization and correlation with statistical process

control.

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TYPICAL PERFOR A CE CHARACTERISTICS

f_RF= 800MHz, P_2XLO= –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)

Conv Gain, NF, IIP3

vs RF Input Frequency

Supply Current vs Supply Voltage

IIP2 vs RF Input Frequency

80

70

110

100

90

25

20

P

V

A

= –10dBm

2XLO

CC

IIP3

= 5V

T

= 25°C

T

= 85°C

= 25°C

A

P

V

A

= –10dBm

2XLO

CC

= 5V

T

= 25°C

60

15

NF

T

= –40°C

A

80

50

40

30

10

5

CONV GAIN

70

0

60

0

100 200 300 400 500 600 700 800 900

RF INPUT FREQUENCY (MHz)

4.75

5

5.25

0

100 200 300

400

500

700 800 900

600

4.5

5.5

RF INPUT FREQUENCY (MHz)

SUPPLY VOLTAGE (V)

5517 G03

5517 G01

5517 G02

5517f

3

LT5517

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TYPICAL PERFOR A CE CHARACTERISTICS

f_RF= 800MHz, P_2XLO= –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)

I/Q Phase Mismatch

vs RF Input Frequency

I/Q Output Power, IM3

vs RF Input Power

I/Q Gain Mismatch

vs RF Input Frequency

20

0

6

4

0.80

0.60

0.40

0.20

0

f

= 1602MHz

f

= 799.9MHz

= 800.1MHz

P

f

= –10dBm

P

f

CC

= –10dBm

2XLO

CC

RF1

RF2

2XLO

BB

CC

2XLO

BB

V

= 5V

= 1MHz

V

= 5V

OUTPUT POWER

IM3

2

–20

–40

0

–0.20

–0.40

–0.60

–0.80

–60

–80

–2

T

= 85°C

= 25°C

= –40°C

T

= 85°C

= 25°C

= –40°C

T

= 85°C

= 25°C

= –40°C

A

–4

–6

A

–100

–18

–14

–10

–6

–2

2

400 500

0

100 200 300

600 700 800 900

700

800 900

RF INPUT FREQUENCY (MHz)

0

100 200 300 400 500 600

RF INPUT POWER (dBm)

RF INPUT FREQUENCY (MHz)

5517 G04

5517 G05

5517 G06

Conv Gain, IIP3

vs 2XLO Input Power

Conv Gain, IIP3 vs Supply Voltage

NF vs 2XLO Input Power

24

20

28

24

20

14

12

10

8

f

= 1602MHz f

= 799.9MHz

= 800.1MHz

T

= 25°C

CC

2XLO

CC

RF1

RF2

A

V

= 5V

f

V

= 5V

f

= 800MHz

RF

IIP3

f

= 1602MHz

2XLO

CC

RF1

RF2

f

= 400MHz

= 200MHz

RF

IIP3

16

12

V

f

= 5V

= 799.9MHz

= 800.1MHz

RF

16

12

8

f

T

= 85°C

= 25°C

= –40°C

A

T

= 85°C

= 25°C

= –40°C

A

f

= 40MHz

RF

8

4

0

CONV GAIN

6

CONV GAIN

5

4

0

4

4.75

5.5

–15

–12

–9

–6

–3

0

4.5

5.25

–15

–12

–9

–6

–3

0

2XLO INPUT POWER (dBm)

SUPPLY VOLTAGE (V)

2XLO INPUT POWER (dBm)

5517 G09

5517 G07

5517 G08

LO-RF Leakage

vs 2XLO Input Power

2XLO-RF Leakage

vs 2XLO Input Power

IIP2 vs 2XLO Input Power

–60

–70

–60

–70

70

65

60

55

T

= 25°C

CC

T

V

= 25°C

A

f

= 1602MHz

A

2XLO

CC

f

= 1600MHz

2XLO

V

= 5V

CC

V

= 5V

T

= 85°C

A

f

= 1600MHz

= 800MHz

2XLO

f

= 800MHz

T

= 25°C

2XLO

A

–80

–90

–80

–90

T

= –40°C

A

f

2XLO

50

45

f

= 80MHz

–100

–110

–120

–100

–110

–120

2XLO

40

35

30

f

= 80MHz

–6

2XLO

–9

–15

–12

–3

0

–15

–12

–9

–6

–3

0

–12

–9

–3

–15

0

–6

2XLO INPUT POWER (dBm)

5517 G11

5517 G12

5517 G10

5517f

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LT5517

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TYPICAL PERFOR A CE CHARACTERISTICS

f_RF= 800MHz, P_2XLO= –10dBm, unless otherwise noted. (Test circuit shown in Figure 2)

RF, 2XLO Port Return Loss

vs Frequency

RF-LO Isolation

Conv Gain

vs RF Input Power

vs Baseband Frequency

6

4

0

–5

120

110

f

= 1602MHz

2XLO

= 5V

V

CC

T

= –40°C

= 85°C

A

f

RF

= 40MHz

100

90

80

70

60

50

2

–10

–15

–20

–25

T

= 25°C

T

A

RF

LO

0

f

= 400MHz

= 800MHz

RF

–2

–4

T

= 25°C

CC

A

V

= 5V

0.1

1

10

100

1000

0

0.40

0.80

1.20

1.60

2

–10

–5

0

10

–15

5

BASEBAND FREQUENCY (MHz)

FREQUENCY (GHz)

RF INPUT POWER (dBm)

5517 G14

5517 G15

5517 G13

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PI FU CTIO S

GNDRF (Pins 1, 4): Ground Pins for RF Termination.

These pins are not internally connected, and should be

connected to the PCB ground plane for best RF isolation.

RF⁺,RF^–(Pins2,3):DifferentialRFInputPins.Thesepins

are internally biased to 2.30V. These two pins should be

DC blocked when connected to ground or other matching

components. The inputs can be terminated in a single-

ended configuration, but differential input drive is pre-

ferredforbestperformance.Anexternalmatchingnetwork

is required for impedance transformation.

2XLO (Pin 10): 2XLO Input Pin. This pin is internally

biasedto1V. Theinputsignal’sfrequencyshouldbetwice

that of the desired demodulator LO frequency. The pin

should be AC coupled with an external DC blocking

capacitor.

Q_OUT^–, Q_OUT⁺(Pins 13, 14): Differential Baseband Output

Pins of the Q-Channel. The internal DC bias voltage is

V_CC– 0.78V for each pin.

I_OUT^–, I_OUT⁺(Pins 15, 16): Differential Baseband Output

Pins of the I-Channel. The internal DC bias voltage is

V_CC– 0.78V for each pin.

EN (Pin 5): Enable Pin. When the input voltage is higher

than 1.6V, the circuit is completely turned on. When the

input voltage is less than 1.3V, the circuit is turned off.

Exposed Pad (Pin 17): Ground Return for the Entire IC.

This pin must be soldered to the printed circuit board

ground plane.

V_CC(Pins 6, 7, 8, 12): Power Supply Pins. These pins

should be decoupled using 1000pF and 0.1µF capacitors.

GND (Pins 9, 11): Ground Pins. These pins are internally

tied together and to the Exposed Pad. They should be

connected to the PCB ground plane.

5517f

5

LT5517

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BLOCK DIAGRA

V

CC

6

7

8

12

I-MIXER

+

–

LPF

16 I

15 I

OUT

0°

RF AMP

+

RF

2

3

LO BUFFERS

÷2

–

RF

+

90°

14 Q

13 Q

OUT

–

Q-MIXER

BIAS

5517 BD

5

9

11

17

10

EN

GND GND EXPOSED

PAD

2XLO

5517f

6

LT5517

TEST CIRCUIT

J3

J4

J5

J6

–

+

–

I

Q

OUT

C15

C14

10pF

C16

10pF

C13

10pF

16 15 14 13

C1

1nF

T1

MABAES0054

R2

J1

0Ω

1

2

3

4

12

11

10

9

RF

GNDRF

V

CC

C12

1nF

C10

3.3pF

+

RF

GND

2XLO

GND

J2

LT5517

–

2XLO

C11

1nF

GNDRF

C2

1nF

17

5

6

7

8

V

CC

EN

C5

1nF

C3

0.1µF

C4

2.2µF

R1

100k

REFERENCE

DESIGNATION

VALUE

SIZE

0603

0805

0603

PART NUMBER

AVX 06033A102JAT1A

C1,C2,C5,C11,C12

C3

C4

C10

1nF

0.1µF

2.2µF

3.3pF

10pF

100k

0Ω

TAIYO YUDEN EMK107B

TAIYO YUDEN JMK107B

AVX 06033A3R3KAT2A

AVX 08055A100ZAT1A

OPTIONAL

C13 TO C16

R1

R2

T1

JUMPER, OPTIONAL

M/A COM MABAES0054

1:4

5517 F02

Figure 2. Evaluation Circuit Schematic

Figure 3. Component Side Silkscreen of Evaluation Board

Figure 4. Component Side Layout of Evaluation Board

5517f

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LT5517

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APPLICATIO S I FOR ATIO

The LT5517 is a direct I/Q demodulator targeting high

linearity receiver applications. It consists of an RF ampli-

fier, I/Qmixers, aquadratureLOcarriergeneratorandbias

circuitry.

of the receiver are similar to those of the transformer-

coupled demo board, because the single-ended to differ-

ential conversion has a 1:4 impedance transformation,

similar to the transformer.

Table 1. The Component Values of Matching Network L_SH, C_S1

and C_S2

The RF signal is applied to the inputs of the RF amplifier,

and is then demodulated into I-channel and Q-channel

baseband signals using precision quadrature LO signals,

which are internally generated using a divide-by-two cir-

cuit. The demodulated I/Q signals are lowpass filtered

internallywitha–3dBbandwidthof130MHz.Thedifferen-

tialoutputsoftheI-channelandQ-channelarewellmatched

in amplitude and their phases are 90° apart across the full

frequency range from 40MHz to 900MHz.

FREQUENCY (MHz)

L

(nH)

C , C (pF)

S1 S2

SH

40

437

71.1

28.6

14.3

9.6

100

200

300

400

500

600

700

800

900

169

80.8

51.5

37

7.2

28.3

22.6

18.5

15.6

13.5

5.8

4.9

RF Input Port

4.2

3.7

Differential drive is recommended for the RF inputs as

shown in Figure 2. A low loss 1:4 transformer is used on

the demonstration board for a wide bandwidth input

impedance match and to assure good noise figure and

maximum demodulator gain. Single-ended to differential

conversion can also be implemented using narrowband

L-C circuits to produce the required balanced waveforms

at the RF⁺and RF^–inputs using three discrete elements as

shown in Figure 5. Nominal values are listed in Table 1. (In

practice, these values should be compensated according

to the parasitics of the PCB.) The conversion gain and NF

3.3

The differential impedance of the RF inputs is listed in

Table 2. The RF inputs may also be terminated in a single-

ended configuration. In this case either the RF⁺or the RF^–

input can be simply AC coupled to a 50Ω source, while the

otherRFinputisconnectedtogroundwitha1nFcapacitor.

Note, however, that this will result in degraded conversion

gain and noise figure in most cases.

MATCHING NETWORK

C

S1

3.7pF

RF

INPUT

+

TO RF

L

C

SH

S2

15.6nH

3.7pF

–

TO RF

5517 F05

Figure 5. RF Input Matching Network at 800MHz

5517f

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LT5517

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APPLICATIO S I FOR ATIO

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Table 2. RF Input Differential Impedance

quadrature Local Oscillator (LO) signals for the demodu-

lator. The on-chip divide-by-two circuit delivers well-

matched, quadrature LO carriers to the I mixer and the Q

mixer.

DIFFERENTIAL S11

MAG ANGLE(°)

FREQUENCY DIFFERENTIAL INPUT

(MHz)

40

IMPEDANCE (Ω)

240.1-j10.3

245.5-j25.9

236.8-j50.0

223.6-j70.5

207.9-j86.3

190.6-j98.1

173.2-j105.8

156.2-j110.2

141.2-j111.8

129.5-j114.5

0.665

0.664

0.663

0.662

0.660

0.657

0.655

0.651

0.650

–0.8

–2.5

100

200

300

400

500

600

700

800

900

I-Channel and Q-Channel Outputs

–5.1

–7.6

Each of the I-channel and Q-channel outputs is internally

connected to V_CCthough a 60Ω resistor. The output DC

biasvoltageisV_CC–0.78V.TheoutputscanbeDCcoupled

or AC coupled to the external loads. The differential output

impedance of the demodulator is 120Ω in parallel with a

10pF internal capacitor, forming a lowpass filter with a

–3dB corner frequency at 130MHz. The load impedance,

–10.2

–12.7

–15.3

–17.9

–20.4

–22.9

R_LOAD, should be larger than 600Ω to assure full gain. The

gain is reduced by 20 • log(1 + 120Ω/R_LOAD) in dB when

the differential output is terminated by R_LOAD. For ex-

ample,thegainisreducedby6.85dBwheneachoutputpin

is connected to a 50Ω load (or 100Ω differential loads).

The output should be taken differentially (or by using

differential-to-single-ended conversion) for best RF per-

formance, including NF and IM2. Proper filtering of the

unwanted high frequency mixing product is also impor-

tant to maintain the highest linearity. A convenient

2XLO Input Port

Toeasetheinterfaceofthereceiverwiththeexternal2XLO

input, the 2XLO port is designed with on-chip 50Ω imped-

ance matching up to 2GHz. The input is internally biased

at 1V. A 1nF DC blocking capacitor is required when

connected to the external 2XLO source.

The 2XLO frequency is required to be twice the desired

operating frequency in order for the chip to generate the

LT5517

V

CC

T1

C1

1nF

MABAES0054

J1

+

5

1

2

3

RF

2

3

C10

250Ω

3.3pF

–

4

2.30V

C2

1nF

5517 F06

Figure 6. RF Input Equivalent Circuit with External Broadband Matching

5517f

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LT5517

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APPLICATIO S I FOR ATIO

approach is to terminate each output with a shunt capaci-

tor. The capacitor value can be optimized depending upon

the operating frequency and the specific PCB layout.

When AC output coupling is used, the resulting highpass

filter’s –3dB roll-off frequency is defined by the R-C

constant of the blocking capacitor and R_LOAD, assuming

R_LOAD> 600Ω.

The phase relationship between the I-channel output sig-

nal and the Q-channel output signal is fixed. When the LO

inputfrequencyishigherthantheRFinputfrequency,then

the Q-channel outputs (Q_OUT⁺, Q_OUT^–) lead the I-channel

outputs (I_OUT⁺, I_OUT^–) by 90°.

Care should be taken when the demodulator’s outputs are

DC coupled to the external load to make sure that the I/Q

mixers are biased properly. If the current drain from the

outputs exceeds 6mA, there can be significant degrada-

tion of the linearity performance. Each output can sink no

more than 13mA when connected to an external load with

a DC voltage higher than V_CC– 0.78V.

When the LO input frequency is lower than the RF input

frequency, then the Q-channel outputs lag the I-channel

outputs by 90°. Note that the phase relationship of the I-

and Q-channel outputs relative to the LO can vary by 180°,

depending on start-up conditions. This is the nature of a

frequency divider-based quadrature phase generator.

V

CC

60Ω

+

I

OUT

16

15

–

OUT

+

–

10pF

Q

OUT

14

13

OUT

10pF

5517 F07

Figure 7. I/Q Output Equivalent Circuit

5517f

10

LT5517

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PACKAGE DESCRIPTIO

UF Package

16-Lead Plastic QFN (4mm × 4mm)

(Reference LTC DWG # 05-08-1692)

0.72 ±0.05

4.35 ± 0.05

2.90 ± 0.05

2.15 ± 0.05

(4 SIDES)

PACKAGE OUTLINE

0.30 ±0.05

0.65 BSC

RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS

BOTTOM VIEW—EXPOSED PAD

0.75 ± 0.05

R = 0.115

TYP

0.55 ± 0.20

4.00 ± 0.10

(4 SIDES)

15

16

PIN 1

TOP MARK

1

2

2.15 ± 0.10

(4-SIDES)

(UF) QFN 0503

0.30 ± 0.05

0.65 BSC

0.200 REF

0.00 – 0.05

NOTE:

1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)

2. ALL DIMENSIONS ARE IN MILLIMETERS

3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE

MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE

4. EXPOSED PAD SHALL BE SOLDER PLATED

5517f

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-

tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.

11

LT5517

RELATED PARTS

PART NUMBER DESCRIPTION

Infrastructure

COMMENTS

LT5511

LT5512

LT5515

LT5516

LT5520

LT5522

High Linearity Upconverting Mixer

RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer

DC to 3GHz, 21dBm IIP3, Integrated LO Buffer

DC-3GHz High Signal Level Downconverting Mixer

1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator

0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator

1.3GHz to 2.3GHz High Linearity Upconverting Mixer

600MHz to 2.7GHz High Signal Level Downconverting Mixer

20dBm IIP3, Integrated LO Quadrature Generator

21.5dBm IIP3, Integrated LO Quadrature Generator

15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports

4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,

50Ω Single-Ended RF and LO Ports

RF Power Detectors

LT5504

800MHz to 2.7GHz RF Measuring Receiver

80dB Dynamic Range, Temperature Compensated,

2.7V to 5.25V Supply

LTC^®5505

LTC5507

RF Power Detectors with >40dB Dynamic Range

100kHz to 1000MHz RF Power Detector

300MHz to 7GHz RF Power Detector

300MHz to 3GHz, Temperature Compensated, 2.7V to 6V Supply

100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply

44dB Dynamic Range, Temperature Compensated, SC70 Package

36dB Dynamic Range, Low Power Consumption, SC70 Package

LTC5508

LTC5509

300MHz to 3GHz RF Power Detector

LTC5532

300MHz to 7GHz Precision RF Power Detector

Precision V

Offset Control, Adjustable Gain and Offset

OUT

RF Building Blocks

LT5500

1.8GHz to 2.7GHz Receiver Front End

1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer

LT5502

400MHz Quadrature IF Demodulator with RSSI

1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,

90dB RSSI Range

LT5503

LT5506

LT5546

1.2GHz to 2.7GHz Direct IQ Modulator and

Upconverting Mixer

1.8V to 5.25V Supply, Four-Step RF Power Control,

120MHz Modulation Bandwidth

500MHz Quadrature IF Demodulator with VGA

1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB

Linear Power Gain, 8.8MHz Baseband Bandwidth

500MHz Ouadrature IF Demodulator with

VGA and 17MHz Baseband Bandwidth

17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V

Supply, –7dB to 56dB Linear Power Gain

RF Power Controllers

LTC1757A

LTC1758

LTC1957

LTC4400

RF Power Controller

Multiband GSM/DCS/GPRS Mobile Phones

RF Power Controller

SOT-23 RF PA Controller

Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,

450kHz Loop BW

LTC4401

LTC4403

SOT-23 RF PA Controller

Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,

250kHz Loop BW

RF Power Controller for EDGE/TDMA

Multiband GSM/GPRS/EDGE Mobile Phones

5517f

LT/TP 0104 1K • PRINTED IN USA

12 ^{LinearTechnology Corporation}

1630 McCarthy Blvd., Milpitas, CA 95035-7417

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com

LINEAR TECHNOLOGY CORPORATION 2004


型号：	LTC5507
厂家：	Linear
描述：	40MHz to 900MHz Quadrature Demodulator 40MHz至900MHz的正交解调器
文件：	总12页 (文件大小：210K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LTC5507 [Linear]

相关型号：

LTC5507ES6

LTC5507ES6#TR

LTC5507ES6#TRMPBF

LTC5507ES6#TRPBF

LTC5508

LTC5508ESC6

LTC5508ESC6#PBF

LTC5508ESC6#TR

LTC5508ESC6#TRM

LTC5508ESC6#TRMPBF

LTC5508ESC6#TRPBF

LTC5508ESC6-#PBF