LTC5533EDE#TRPBF [Linear]
LTC5533 - 300MHz to 11GHz Precision Dual RF Power Detector; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C;
| 型号： | LTC5533EDE#TRPBF |
| 厂家： | 
Linear |
| 描述： | LTC5533 - 300MHz to 11GHz Precision Dual RF Power Detector; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C 射频 微波 |
| 文件： | 总12页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5533
300MHz to 11GHz Precision
Dual RF Power Detector
U
DESCRIPTIO
FEATURES
The LTC®5533 is a dual channel RF power detector for RF
applications operating in the 300MHz to 11GHz range.
Two independent temperature compensated Schottky di-
ode peak detectors and buffer amplifiers are combined in
a small 4mm × 3mm DFN package.
■
Two Independent Temperature Compensated
Schottky Diode RF Peak Detectors
■
45dB Channel-to-Channel Isolation at 2GHz
■
Wide Input Frequency Range: 300MHz to 11GHz*
■
Wide Input Power Range: –32dBm to 12dBm
■
Buffered Detector Outputs with Gain of 2x
The RF input voltage is peak detected using on-chip
Schottky diodes. The detected voltage is buffered and
suppliedtotheVOUT pins. Apowersavingshutdownmode
reduces current to less than 2µA/channel. The initial
output starting voltages can be precisely adjusted using
the VOS pins.
■
Adjustable VOUT Starting Voltage
■
Wide VCC Range of 2.7V to 6V
■
Low Operating Current: <500µA/Channel
■
Low Shutdown Current: <2µA/Channel
■
4mm × 3mm DFN Package
U
The LTC5533 operates with input power levels from
–32dBm to 12dBm.
APPLICATIO S
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
■
PA Forward and Reverse Power Monitor
■
Dual PA Transmit Power Control
■
802.11a, b, g, 802.15, WiMAX
■
PA Linearization
■
Fixed Wireless Access
■
RF Power Alarm
■
Envelope Detector
U
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
300MHz to 11GHz RF Power Detectors
3600
V
V
T
= 3.6V
= 0V
CC
OS
A
LTC5533
RF
IN1
39pF
3200
2800
2400
2000
1600
1200
800
4GHz
1GHz
= 25°C
V
V
RF1 INPUT
CC
CC1
100pF
V
V
V
V
GND1
OUT1
OS1
CC2
5GHz
500MHz
6GHz
SHDN1
OS1
39pF
RF
RF2 INPUT
IN2
0.1µF
100pF
V
V
V
GND2
OUT2
OS2
8GHz
11GHz
10GHz
9GHz
SHDN2
DISABLE ENABLE
OS2
400
5533 TA01
0
–28 –24 –20 –16 –12 –8
12
–4
0
4
8
(EXPOSED PAD)
RF INPUT POWER (dBm)
5533 TA02
5533f
1
LTC5533
W W
U W
U
W
U
ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
TOP VIEW
ORDER PART
VCC1, VCC2, VOUT1, VOUT2, VOS1, VOS2.......–0.3V to 6.5V
RFIN1, RFIN2 Voltage ........................(VCC ± 1.25V) to 7V
RFIN1, RFIN2 Power (RMS) ................................. 12dBm
SHDN1, SHDN2 Voltage to GND .. –0.3V to (VCC + 0.3V)
IVOUT1, IVOUT2 ........................................................ 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
NUMBER
V
1
2
3
4
5
6
12 RF
IN1
CC1
V
11 GND1
OUT1
LTC5533EDE
V
10 SHDN1
OS1
13
V
9
8
7
RF
IN2
CC2
V
GND2
OUT2
DFN PART
MARKING
V
SHDN2
OS2
DE12 PACKAGE
12-LEAD (4mm × 3mm) PLASTIC DFN
5533
TJMAX = 125°C, θJA = 40°C/W
EXPOSED PAD IS GND (PIN 13)
MUST BE SOLDERED TO PCB
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
VOS = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
6
UNITS
V
V
Operating Voltage
Operating Current
Shutdown Current
●
●
●
●
2.7
CC
I
I
I
= 0mA
0.45
0.01
0.7
2
mA
µA
VCC
VCC
VOUT
SHDN = LO
V
OUT
Start Voltage (No RF Input)
R
LOAD
= 2k, V = 0V
85
2
110 to 150
1
170
mV
mV
OS
SHDN = LO
= 1.75V, V = 2.7V, ∆V < 10mV
OUT
V
V
V
V
V
V
V
V
V
Output Current
Enable Time
Bandwidth
V
OUT
●
●
4
8
2
mA
µs
OUT
OUT
OUT
OUT
OUT
OUT
OUT
CC
SHDN = LO to HI, C
= 33pF, R
= 2k
LOAD
20
33
LOAD
C
LOAD
= 33pF, R
= 2k (Note 4)
MHz
pF
LOAD
Load Capacitance
Slew Rate
(Note 6)
●
V
V
= 1V Step, C
= 33pF, R = 2k (Note 3)
LOAD
3
1
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
mV
P-P
CC
Shutdown Resistance
Resistance Measured to Ground
280
Ω
Voltage Range
Input Current
●
●
●
●
●
0
1
V
µA
V
OS
OS
V
OS
V
CC
V
CC
= 1V
–0.5
0.5
SHDN Voltage, Chip Disabled
SHDN Voltage, Chip Enabled
SHDN Input Current
= 2.7V to 6V
= 2.7V to 6V
0.35
1.4
V
SHDN = 3.6V
22
300 to 11000
–32 to 12
220
36
µA
RF Input Frequency Range
IN
MHz
dBm
Ω
RF Input Power Range
IN
RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V
CC
RF AC Input Resistance
IN
f = 1000MHz, Pin = –25dBm
f = 1000MHz, Pin = –25dBm
f = 2GHz
RF Input Shunt Capacitance
IN
0.65
pF
Channel to Channel Isolation
45
dB
Note 1: Absolute Maximum Ratings are those values beyond which the life
Note 3: The rise time at V
is measured between 1.3V and 2.3V.
OUT
of a device may be impaired.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
equation: BW = 0.35/rise time.
Note 5: RF performance is production tested at 1800MHz
Note 6: Guaranteed by design.
5533f
2
LTC5533
U W
(For one channel. SHDN = VCC, unless
TYPICAL PERFOR A CE CHARACTERISTICS
otherwise specified.)
Shutdown Current vs Supply
Voltage (RF Input Signal Off,
VOS = 0V, SHDN = 0V)
Output Starting Voltage vs Supply
Voltage (RF Input Signal Off,
Supply Current vs Supply Voltage
(RF Input Signal Off, VOS = 0V)
VOS = 0V)
3.0
2.5
2.0
1.5
140
135
130
125
500
480
460
440
T
= 85°C
A
T
T
= 85°C
= 25°C
A
A
T
= –40°C
A
T
= 25°C
= 85°C
A
T
= –40°C
A
1.0
0.5
0
T
A
T
A
= 25°C
T
= –40°C
A
120
420
4.5
5.5
6
2.5
3
3.5
4
5
2.5
3
3.5
4
4.5
5
5.5
6
2.5
3
3.5
4
4.5
5
5.5
6
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
5533 G03
5533 G01
5533 G02
Typical Detector Characteristics,
300MHz
Typical Detector Characteristics,
1GHz
Typical Detector Characteristics,
2GHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
V
V
= 3.6V
= 0V
V
V
= 3.6V
= 0V
V
V
= 3.6V
= 0V
CC
OS
CC
OS
CC
OS
3200
2800
2400
2000
1600
1200
800
T
= –40°C
T
= –40°C
T = –40°C
A
A
A
T
= 25°C
T
= 25°C
A
A
T
= 25°C
A
T
= 85°C
T
= 85°C
T = 85°C
A
A
0
A
400
400
400
0
0
0
–32 –28 –24 –20 –16
4
8
12
–12 –8 –4
–32 –28 –24 –20 –16
4
8
12
–32 –28 –24 –20 –16
4
8 12
–12 –8 –4
0
–12 –8 –4
0
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5533 G04
5533 G05
5533 G06
Typical Detector Characteristics,
3GHz
Typical Detector Characteristics,
5GHz
Typical Detector Characteristics,
7GHz
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
V
= 3.6V
= 0V
V
V
= 3.6V
= 0V
V
V
= 3.6V
= 0V
CC
OS
CC
OS
CC
OS
T
= –40°C
A
T
= –40°C
T
= 25°C
T
= –40°C
A
A
A
T
= 25°C
A
T
= 25°C
A
T
= 85°C
A
T
= 85°C
T
= 85°C
A
A
400
400
400
0
0
0
–32 –28 –24 –20 –16
4
8
12
–32 –28 –24 –20 –16
4
8 12
–12 –8 –4
0
–12 –8 –4
0
–32 –28 –24 –20 –16
4
8 12
–12 –8 –4
0
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5533 G07
5533 G08
5533 G09
5533f
3
LTC5533
U W
(For one channel. SHDN = VCC, unless
otherwise specified.)
TYPICAL PERFOR A CE CHARACTERISTICS
VOUT Slope vs RF Input Power
at 300MHz
VOUT Slope vs RF Input Power
at 1GHz
VOUT Slope vs RF Input Power
at 2GHz
1000
100
10
1000
100
10
1000
100
10
V
CC
V
OS
= 3.6V
= 0V
V
V
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
CC
OS
T
A
= –40°C
T
= –40°C
T
= –40°C
A
A
T
= 85°C
T
= 85°C
T = 85°C
A
A
A
T
= 25°C
T
= 25°C
T
A
= 25°C
A
A
1
1
1
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
5533 G12
5533 G10
5533 G11
V
OUT Slope vs RF Input Power
VOUT Slope vs RF Input Power
at 5GHz
VOUT Slope vs RF Input Power
at 7GHz
at 3GHz
1000
100
10
1000
100
10
1000
100
10
V
CC
V
OS
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
T
= –40°C
A
T
= –40°C
A
T = –40°C
A
T
A
= 85°C
T
A
= 85°C
T
A
= 85°C
T
= 25°C
T = 25°C
A
T
= 25°C
A
A
1
1
1
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
5533 G13
5533 G15
5533 G14
VOUT Variation Relative to 25°C
VOUT Variation Relative to 25°C
VOUT Variation Relative to 25°C
vs RF Input Power at 300MHz
vs RF Input Power at 1GHz
vs RF Input Power at 2GHz
3
3
3
2
V
CC
V
OS
= 3.6V
= 0V
V
V
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
CC
OS
2
1
2
1
T
= –40°C
T
= –40°C
A
A
1
T
= –40°C
= 85°C
A
0
0
0
T
T
= 85°C
A
–1
–1
–1
A
T
= 85°C
A
–2
–3
–2
–3
–2
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
5533 G17
5533 G16
5533 G18
5533f
4
LTC5533
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(For one channel. SHDN = VCC, unless
otherwise specified.)
VOUT Variation Relative to 25°C
vs RF Input Power at 3GHz
VOUT Variation Relative to 25°C
vs RF Input Power at 5GHz
VOUT Variation Relative to 25°C
vs RF Input Power at 7GHz
3
2
3
2
3
2
V
CC
V
OS
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
V
CC
V
OS
= 3.6V
= 0V
T
A
= –40°C
T
A
= –40°C
T
= –40°C
A
1
1
1
0
0
0
–1
–1
–1
T
= 85°C
A
T
A
= 85°C
T
A
= 85°C
–2
–3
–2
–3
–2
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
–26 –22 –18 –14 –10 –6 –2
2
6
10
–28 –24 –20 –16 –12 –8 –4
0
4
8
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5533 G19
5533 G21
5533 G20
Example VOUT1 – VOUT2 Mismatch
with –14dBm RF Signal Input at
1.8GHz
Example VOUT1 – VOUT2 Mismatch
with No RF Signal Input
VOUT vs RF Input Power and VCC
Supply Voltage, fRF = 2GHz
25
20
15
6000
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
25
20
15
V
V
T
= 3.6V
= 0V
V
= 6V
CC
V
V
T
= 3.6V
= 0V
V
T
= 0V
CC
OS
CC
OS
OS
A
= 25°C
= 25°C
= 25°C
V
= 5V
A
A
CC
V
= 4V
CC
V
= 3V
CC
10
5
10
5
0
0
0
–1 –0.8–0.6–0.4–0.2 0 0.2 0.4 0.6 0.8
– V MISMATCH (dB)
1
–32 –28
–16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
12
–25 –20 –15 –10 –5
0
5
10 15 20 25
MISMATCH (mV)
OUT2
–24 –20
V
V
– V
OUT1
OUT2
OUT1
5533 G23
5533 G24
5533 G22
VOUT vs RF Input Power and VOS
fRF = 2GHz
,
Channel-to-Channel Isolation vs
RF Input Frequency
Output Delay vs RF Input Power
3600
3200
2800
2400
2000
1600
1200
800
–20
–30
–40
–50
1000
900
800
700
600
500
400
300
200
100
V
T
= 3.6V
V
V
A
= 3.6V
= 0V
CC
A
CC
OS
CH. 2
CH. 1
= 25°C
T
= 25°C
V
= 1V
OS
CH. 1
CH. 2
V
OS
= 0.75V
V
OS
= 0.5V
V
OS
= 0V
90% SWITCHING
V
V
A
= 3.6V
= 0V
CC
OS
–60
–70
V
= 0.25V
OS
400
T
= 25°C
RF P = +10dBm
50% SWITCHING
IN
0
–32 –28 –24 –20 –16 –12
12
0
4000 6000 8000 10000 12000
2000
RF INPUT FREQUENCY (MHz)
–8 –4
0
4
8
–20 –16
4
8
–12 –8
–4
0
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5533 G25
5533 G26
5533 G27
5533f
5
LTC5533
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
290.45
234.41
178.25
137.31
109.17
86.30
68.65
57.48
49.79
43.56
38.67
34.82
31.68
29.13
27.17
25.73
24.56
23.18
22.31
20.73
19.88
19.40
19.05
19.08
19.55
20.85
21.94
20.60
19.29
18.69
18.53
18.74
19.79
19.75
19.99
–136.22
–162.54
–170.53
–159.89
–147.57
–136.18
–121.74
–107.60
–96.72
–86.70
–77.91
–70.13
–62.86
–56.01
–49.83
–44.24
–39.74
–35.35
–30.62
–26.88
–22.31
–18.23
–14.25
–10.21
–6.30
5508 TA03
0.3000GHz-7.000GHz
–2.84
–1.49
–0.07
2.99
6.61
10.39
14.35
17.91
20.77
22.47
5533f
6
LTC5533
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
S11 Forward Reflection
Impedance
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
(Ω)
(Ω)
0.30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90
2.10
2.30
2.50
2.70
2.90
3.10
3.30
3.50
3.70
3.90
4.10
4.30
4.50
4.70
4.90
5.10
5.30
5.50
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.00
216.45
190.63
161.98
133.17
113.08
94.55
75.33
63.52
55.19
48.64
43.73
39.71
36.47
33.69
31.61
29.78
28.27
26.63
26.12
24.20
23.28
22.60
22.21
22.15
22.61
23.90
24.97
23.51
22.25
21.57
21.43
21.69
22.68
22.81
23.07
–76.47
–98.28
–112.03
–111.53
–109.05
–107.08
–98.50
–88.19
–80.05
–72.23
–64.81
–58.31
–52.27
–46.77
–41.25
–36.61
–32.39
–28.12
–23.97
–20.75
–16.69
–12.77
–9.08
0.3000GHz-7.000GHz
5508 TA04
–5.24
–1.58
1.53
2.62
4.00
6.94
10.62
14.02
17.77
21.24
24.21
25.56
5533f
7
LTC5533
U
U
U
PI FU CTIO S
VCC1, VCC2 (Pins 1, 4): Power Supply Voltage, 2.7V to 6V.
VCC should be bypassed appropriately with ceramic
capacitors.
has an internal 160k pulldown resistor to ensure that the
detector is shutdown when no SHDN input is applied. In
shutdown VOUT is connected to ground via a 280Ω resis-
tor. Channels can be shut down independently.
VOUT1, VOUT2 (Pins 2, 5): Detector Outputs.
GND1, GND2 (Pins 11, 8): Ground.
V
OS1, VOS2 (Pins 3, 6): VOUT Offset Voltage Adjustments.
These pins adjust the starting VOUT voltage when no RF
signal is present. For VOS from 0V to 130mV, VOUT is
unaffected by VOS. For VOS > 130mV, VOUT is the sum of
RFIN1, RFIN2 (Pins 12, 9): RF Input Voltage. Referenced
to VCC. A coupling capacitor must be used to connect to
the RF signal source. These pins have internal 500Ω
terminations, Schottky diode detectors and peak detector
capacitors.
V
OS plus the detected RF signal.
SHDN1,SHDN2 (Pin10,7):ShutdownInputs.Alogiclow
on the SHDN pin places the corresponding detector in
shutdown mode. A logic high enables the detector. SHDN
Exposed Pad (Pin13): Ground.
W
BLOCK DIAGRA
(One Channel)
RF
SOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
V
CC
ONE CHANNEL
SD
+
–
BUFFER
V
OUT
BIAS
SD
500Ω
30k
RF
IN
500Ω
30k
180Ω
100Ω
SD
31k
24k
25pF
+
–
+
–
V
OS
RF DET
80k
SD
80k
50µA
50µA
120mV
GND
160k
+
5531 BD
SHDN
5533f
8
LTC5533
U
W
U U
APPLICATIO S I FOR ATIO
Operation
span the input range of a variety of analog-to-digital
converters.VOUT willnotchangeuntilVOS exceeds130mV.
The voltage at VOUT for VOS >130mV and with no RF signal
present is:
The LTC5533 contains two RF detector dice in one pack-
age forming two independent RF detector channels. Each
channel provides RF power detection over frequencies
rangingfrom300MHzto11GHz.Channelfunctionsinclude
aninternalfrequencycompensatedbufferamplifierwiththe
gainsetto2x,anRFSchottkydiodepeakdetectorandlevel
shiftamplifiertoconverttheRFinputsignaltolowfrequency
andadelaycircuittoavoidvoltagetransientsatVOUT when
powering up. The LTC5533 has both shutdown and start-
ing voltage adjustment capabilities.
V
OUT = VOS
VOUT will track VOS above 130mV.
RF Detectors
The internal RF Schottky diode peak detectors and level
shift amplifiers convert the RF input signals to a low
frequency signal. The detectors demonstrate excellent
efficiency and linearity over a wide range of input power.
The Schottky diodes are biased at about 55µA and drive
25pF internal peak detector capacitors.
Buffer Amplifiers
The output buffer amplifiers are capable of supplying
typically 4mA into a load. These amplifiers have band-
widths of 2MHz and a fixed internal gain of two.
Applications
The VOS inputs control the DC input voltages to the buffer
amplifiers. VOS must be connected to ground if the DC
outputvoltageisnottobechanged.Thebuffersareinitially
trimmed to approximately 130mV with VOS connected to
ground.
T
he LTC5533 can be used as a self-standing signal
strength measuring receiver for a wide range of input
signals from –32dBm to 12dBm for frequencies from
300MHz to 11GHz. Operation at higher frequencies is
achievablewithreducedperformance. Consultfactoryfor
more information. Figure 1 plots the output voltage as a
function of RF input power of an 11GHz CW input signal.
The VOS pins are used to change the initial VOUT starting
voltage. This function enables the LTC5533 outputs to
Demo Board Schematic
V
CC1
2.7V TO 6V
C1
0.1µF
C2
100pF
SHDN1
C3
V
OUT1
C4
39pF
LTC5533
OPT
1
2
3
4
5
6
12
11
10
9
J1
V
V
V
V
V
V
RF
IN1
CC1
RF
IN1
V
OS1
R1
OPT
GND
C5
OPT
OUT1
OS1
CC2
C6
39pF
SHDN1
J2
V
CC2
2.7V TO 6V
RF
IN2
RF
IN2
C7
0.1µF
C8
100pF
8
R2
OPT
GND
SHDN2
13
OUT2
OS2
7
5533 BD
V
OUT2
C9
OPT
SHDN2
V
OS2
C10
OPT
5533f
9
LTC5533
W U U
U
APPLICATIO S I FOR ATIO
3600
Figure 2 shows the corresponding slope of the 11GHz
response, and Figure 3 shows the variation of the output
voltage vs RF input power at –40°C and 85°C, normalized
to the room temperature (25°C) results.
V
V
= 3.6V
= 0V
CC
OS
3200
2800
2400
2000
1600
1200
800
The LTC5533 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the detector
outputs can be split between two branches, providing AC-
coupled data (or audio) output and a DC-coupled RSSI
output for signal strength measurements and AGC.
T
= –40°C
A
T
= 25°C
A
400
T
= 85°C
A
0
–32 –28 –24 –20 –16
4
8 12
–12 –8 –4
0
RF INPUT POWER (dBm)
The LTC5533 can also be used for RF power detection and
control. Figure 4 is an example of an LTC5533 used for
dual band mobile phone transmitter power control.
5533 F01
Figure 1. Typical Detector Characteristics, 11GHz
The LTC5533 consists of two separate RF detector dice
packaged together. Consequently, detector-to-detector
isolation is good—typically 45dB at 2GHz. Output match-
ing is good, but not precise. The characterization plots in
the Typical Performance Characteristics show that the
typical output voltage mismatch is within ±25mV with no
RFinputsignalpresent. With–14dBmRFinputsignal, the
typical equivalent mismatch is within ±1dB.
1000
V
V
= 3.6V
= 0V
CC
OS
100
10
1
T
= 85°C
T
= –40°C
A
A
T
= 25°C
A
–32 –28 –24 –20 –16 –12 –8 –4
RF INPUT POWER (dBm)
0
4
8
+
C3
20dB RESISTIVE TAP
C1
ANTENNA
Li-Ion
5533 F02
0.1µF
R1
Figure 2. VOUT Slope vs RF Input Power at 11GHz
39pF
LTC5533
360Ω
1
12
11
10
9
V
V
V
V
V
V
RF
IN1
CC1
2
3
4
5
6
GND
OUT1
OS1
CC2
3
14dB RESISTIVE TAP
R2
V
V
= 3.6V
= 0V
CC
OS
SHDN1
2
1
RF
IN2
8
GND
C2
39pF
OUT2
OS2
150Ω
T
= –40°C
= 85°C
A
7
SHDN2
0
CELL BAND
DIPLEXER
–1
T
A
PCS BAND
–2
–3
–24 –20 –16 –12 –8 –4
0
4
8
12
VPC
MOBILE PHONE BB/DSP
5533 F04
RF INPUT POWER (dBm)
BSE
5533 F03
Tx PA MODULE
Figure 3. VOUT Variation at –40°C and at 85°C vs RF Input Power
at 11GHz, Normalized to Room Temperature (25°C) Results.
Figure 4. Dual Band Mobile Phone Transmitter
Power Contol with LTC5533
5533f
10
LTC5533
U
PACKAGE DESCRIPTIO
DE Package
12-Lead Plastic DFN (4mm × 3mm)
(Reference LTC DWG # 05-08-1695)
0.65 ±0.05
3.50 ±0.05
2.20 ±0.05 (2 SIDES)
1.70 ±0.05
PACKAGE OUTLINE
0.25 ± 0.05
0.50
BSC
3.30 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.38 ± 0.10
4.00 ±0.10
(2 SIDES)
R = 0.115
TYP
7
12
R = 0.20
TYP
3.00 ±0.10 1.70 ± 0.10
(2 SIDES)
(2 SIDES)
PIN 1
TOP MARK
(NOTE 6)
PIN 1
NOTCH
(UE12/DE12) DFN 0603
6
0.25 ± 0.05
1
0.75 ±0.05
0.200 REF
0.50
BSC
3.30 ±0.10
(2 SIDES)
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING PROPOSED TO BE A VARIATION OF VERSION
(WGED) IN JEDEC PACKAGE OUTLINE M0-229
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5533f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LTC5533
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
Infrastructure
LT®5511
LT5512
LT5514
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
DC-3GHz High Signal Level Downconverting Mixer
Ultralow Distortion, IF Amplifier/ADC Driver with
Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB
Gain Control Range
LT5515
LT5516
LT5517
LT5519
LT5520
LT5521
LT5522
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
40MHz to 900MHz Direct Conversion Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
3.7GHz Very High Linearity Mixer
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
24.2dBm IIP3 at 1.95GHz, 12.5dB NF, –42dBm LO Leakage
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
LT5524
LT5525
Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Range
0.9GHz to 2.5GHz High Linearity, Low Power
Downconverting Mixer
17.6dBm IIP3 at 1.9GHz, On-Chip 50Ω RF and LO Matching,
I
= 28mA
CC
LT5526
LT5528
Broadband High Linearity, Low Power Downconverting Mixer
1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator
16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, I = 28mA
CC
21.8dBm OIP3 at 2GHz, –159dBm/Hz, Noise Floor, All Ports 50Ω
Matched, Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
LTC5508
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
LTC5530
LTC5531
LTC5532
LT5534
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
300MHz to 7GHz Precision RF Power Detector
300MHz to 7GHz Precision RF Power Detector
300MHz to 7GHz Precision RF Power Detector
50MHz to 3GHz RF Power Detector
Precision V
Precision V
Precision V
Offset Control, Shutdown and Adjustable Gain
Offset Control, Shutdown and Adjustable Offset
Offset Control, Adjustable Gain and Offset
OUT
OUT
OUT
60dB Dynamic Range, Temperature Compensated, SC70 Package
Precision V Offset Control, Adjustable Gain and Offset
LTC5535
LTC5536
300MHz to 7GHz Precision RF Detector with 12MHz Amplifier
OUT
600MHz to 7GHz Precision RF Detector With Fast Comparator
Output
–26dBm to 12dBm Range, 2mA Supply Current at 2V to 6V Supply,
Latch Enable Output
RF Power Controllers
LTC4400
LTC4401
LTC4402
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
Multiband RF Power Controller
Multiband GSM/GPRS/EDGE Mobile Phones
LTC4402-1: Single Channel Output Control
LTC4402-2: Dual Channel Output Control
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5533f
LT/TP 0105 1K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
12
●
●
©LINEAR TECHNOLOGY CORPORATION 2005
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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