LTC5535 [Linear]
Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth; 精密600MHz至7GHz的，射频检测器具有可调增益和12MHz的基带带宽
| 型号： | LTC5535 |
| 厂家： | 
Linear |
| 描述： | Precision 600MHz to 7GHz, RF Detector with Adjustable Gain and 12MHz Baseband Bandwidth |
| 文件： | 总12页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LTC5535
Precision 600MHz to 7GHz,
RF Detector with
Adjustable Gain and
12MHz Baseband Bandwidth
U
DESCRIPTIO
FEATURES
The LTC®5535 is an RF power detector for RF applications
operating in the 600MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and output
amplifier are combined in a small ThinSOTTM package. The
supply voltage range is optimized for operation from a
single cell lithium-ion or three cell NiMH battery.
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 600MHz to 7GHz*
■
Wide Input Power Range: –32dBm to 10dBm
■
External Gain Control
Precision VOUT Offset Control
■
■
Low Starting Voltage: 200mV for Gain = 2
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the VOUT pin.
■
Wide VCC Range of 2.7V to 5.5V
Low Operating Current: 2mA
■
■
Available in a Low Profile (1mm) SOT-23 Package
The LTC5535 output amplifier gain is set via external
resistors. The initial starting voltage of 200mV can be
precisely adjusted using the VOS pin.
U
APPLICATIO S
■
802.11a, 802.11b, 802.11g, 802.15, 802.16
The LTC5535 operates with input power levels from
–32dBm to 10dBm. The 12MHz baseband bandwidth is
much higher than that of previous Schottky detector
products.
, LTC and LT are registered trademarks of Linear Technology Corporation.
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
■
Multimode Mobile Phone Products
■
Optical Data Links
Wireless Data Modems
Wireless and Cable Infrastructure
RF Power Alarm
Envelope Detector
■
■
■
■
U
TYPICAL APPLICATIO
Output Voltage vs RF Input Power
3600
V
T
= 3.6V
600MHz to 7GHz RF Power Detector
CC
= 25°C
3200
2800
2400
2000
1600
1200
800
A
GAIN = 2
2GHz
V
OS
= 0V
33pF
600MHz
1GHz
LTC5535
1
2
3
6
5
4
RF
INPUT
V
RF
CC
V
CC
IN
5GHz
6GHz
100pF
0.1µF
GND
V
OUT
7GHz
R
R
A
B
4GHz
V
OS
V
V
OS
M
REFERENCE
5535 TA01
400
0
–32
–20 –16 –12 –8 –4
0
4
8
12
–28 –24
RF INPUT POWER (dBm)
5535 TA02
5535f
1
LTC5535
U
W
U
W W
U W
PACKAGE/ORDER I FOR ATIO
ABSOLUTE AXI U RATI GS
(Note 1)
ORDER PART
VCC, VOUT, VM, VOS .............................................. –0.3V to 6V
RFIN Voltage ...................................(VCC ± 1.5V) to 6.5V
RFIN Power (RMS) .............................................. 12dBm
NUMBER
TOP VIEW
LTC5535ES6
RF
IN
1
6 V
5 V
4 V
CC
OUT
M
I
VOUT .................................................................... 25mA
GND 2
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
V
OS
3
S6 PART
MARKING
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
TJMAX = 125°C, θJA = 250°C/W
LBHK
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, RF Input Signal is Off, RA = RB = 500Ω, VOS = 0V unless
otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
MAX
5.5
UNITS
V
V
Operating Voltage
Operating Current
●
●
●
2.7
CC
I
I
= 0mA
VOUT
2
3.5
mA
mV
mA
MHz
pF
VCC
V
V
V
V
V
V
V
(No RF Input)
150 180 to 220
250
OUT OL
Output Current
Bandwidth
V
C
= 1.75V, V = 2.7V to 5.5V, ∆V < 10mV
OUT
10
20
12
OUT
OUT
OUT
OUT
OUT
OUT
CC
= 33pF, R
= 2k, P = –10dBm (Note 4)
IN
LOAD
LOAD
Load Capacitance
Slew Rate
(Note 6)
●
33
V
V
= 1V Step, C
= 33pF (Note 3)
50
1
V/µs
RFIN
LOAD
Noise
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination,
mV
P-P
CC
50Ω AC Output Termination
V
V
V
V
Voltage Range
Input Current
●
●
●
●
0
1
V
µA
V
OS
V
V
= 1V
–0.5
0
0.5
OS
OS
Voltage Range
Input Current
V
CC
-1. 8
M
M
= 3.6V
–0.5
0.5
µA
M
RF Input Frequency Range
600 to 7000
–32 to 10
220
MHz
dBm
Ω
IN
RF Input Power Range
IN
RF Frequency = 300MHz to 7GHz (Note 5, 6) V = 2.7V to 6V
CC
RF AC Input Resistance
IN
F = 1000MHz, Pin = –25dBm
F = 1000MHz, Pin = –25dBm
RF Input Shunt Capacitance
IN
0.65
pF
Note 1: Absolute Maximum Ratings are those values beyond which the life
Note 3: The rise time at V
is measured between 1.3V and 2.3V.
OUT
of a device may be impaired.
Note 4: See Table 1 in Applications Information section.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
5535f
2
LTC5535
U W
TYPICAL PERFOR A CE CHARACTERISTICS (RLOAD = 1k = RA + RB)
Typical Detector Characteristics,
600MHz, Gain = 2, VOS = 0V
Output Voltage vs Supply Voltage
Supply Current vs Supply Voltage
3600
3200
2800
2400
2000
1600
1200
800
2.8
2.6
2.4
2.2
220
215
210
205
RF INPUT SIGNAL OFF
GAIN = 2
OS
RF INPUT SIGNAL OFF
V
= 3.6V
CC
V
= 0V
T
A
= 85°C
T
= –40°C
A
T
= 85°C
= 25°C
A
T
A
= 25°C
T
= 25°C
A
T
A
2.0
1.8
1.6
200
195
190
T
A
= –40°C
T
A
= –40°C
T
= 85°C
A
400
0
–32
4.5
SUPPLY VOLTAGE (V)
5.5
6
4.5
5.5
6
2.5
3
3.5
4
5
2.5
3
3.5
4
5
–8
12
8
–20 –16 –12
–4
0
4
–28 –24
RF INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
5535 G02
5535 G01
5535 G03
Typical Detector Characteristics,
3000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
2000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
1000MHz, Gain = 2, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
V
CC
= 3.6V
V
= 3.6V
CC
CC
T
= –40°C
T = –40°C
A
T
= –40°C
A
A
T
A
= 25°C
T
= 25°C
T
= 25°C
A
A
T
A
= 85°C
T = 85°C
A
T
= 85°C
A
400
400
400
0
–32
0
–32
0
–32
–20 –16 –12 –8 –4
0
4
8
12
–20 –16 –12 –8 –4
0
4
8
12
–20 –16 –12 –8 –4
0
4
12
8
–28 –24
–28 –24
–28 –24
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G04
5535 G05
5535 G06
Typical Detector Characteristics,
5000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
6000MHz, Gain = 2, VOS = 0V
Typical Detector Characteristics,
4000MHz, Gain = 2, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
T
= –40°C
T = –40°C
A
T
= –40°C
A
A
T
= 25°C
T
= 25°C
A
T
= 25°C
A
A
T
= 85°C
A
T
= 85°C
T
= 85°C
A
A
400
400
400
0
–32
0
–32
0
–32
–20 –16 –12 –8 –4
0
4
8
12
–20 –16 –12 –8 –4
0
4
12
8
–28 –24
–28 –24
–8
12
8
–20 –16 –12
–4
0
4
–28 –24
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G07
5535 G08
5535 G09
5535f
3
LTC5535
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(RLOAD = 1k = RA + RB)
V
OUT vs RF Input Power and VCC
2000MHz, Gain = 2, VOS = 0V,
TA = 25°C
,
Typical Detector Characteristics,
7000MHz, Gain = 2, VOS = 0V
3600
3200
2800
2400
2000
1600
1200
800
5200
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
V
= 3.6V
CC
V
V
= 5V
= 4V
CC
CC
V
= 6V
CC
T
= –40°C
A
V
= 3V
CC
T
= 25°C
A
T
0
= 85°C
A
400
400
0
–32
0
–32 –28 –24 –20 –16 –12 –8 –4
0
4
8
12
–20 –16 –12 –8 –4
4
12
8
–28 –24
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G11
5535 G10
VOUT vs RF Input Power and VOS
2000MHz, Gain = 2
,
Typical Detector Characteristics,
2000MHz, Gain = 4, VOS = 0V
4000
3600
3200
2800
2400
2000
1600
1200
800
3600
3200
2800
2400
2000
1600
1200
800
V
CC
= 3.6V
V
T
= 3.6V
CC
A
= 25°C
T
= –40°C
A
V
= 1V
OS
T
= 25°C
A
V
= 0.5V
OS
T
A
= 85°C
V
= 0V
OS
400
400
0
–32
0
–32
–20 –16 –12 –8 –4
0
4
8
–20 –16 –12 –8 –4
0
4
12
8
–28 –24
–28 –24
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G13
5535 G12
Time Domain Response at
fRF = 1900MHz, PRF = 0dBm
Time Domain Response at
fRF = 1900MHz, PRF = –10dBm
ASK
MODULATION
SIGNAL
ASK
MODULATION
SIGNAL
100mV/DIV
500mV/DIV
OUTPUT
200mV/DIV
OUTPUT
500mV/DIV
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
100ns/DIV
5535 G14
TA = 25°C
VCC = 3.6V
GAIN = 2
VOS = 0V
100ns/DIV
5535 G15
5535f
4
LTC5535
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(RLOAD = 1k = RA + RB)
VOUT Slope vs RF Input Power
at 600MHz
VOUT Slope vs RF Input Power
at 1000MHz
VOUT Slope vs RF Input Power
at 2000MHz
1000
100
1000
100
1000
100
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
GAIN = 2
= 0V
CC
CC
GAIN = 2
V = 0V
OS
GAIN = 2
= 0V
V
OS
V
OS
T
= –40°C
T
= –40°C
T = –40°C
A
A
A
T
= 25°C
T = 25°C
A
T
= 25°C
10
0
A
10
0
A
10
0
T
A
= 85°C
T
= 85°C
T = 85°C
A
A
–30 –25 –20 –15 –10 –5
0
5
10
–30 –25 –20 –15 –10 –5
0
5
10
–30 –25 –20 –15 –10 –5
0
5
10
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G17
5535 G16
5535 G18
V
OUT Slope vs RF Input Power
VOUT Slope vs RF Input Power
at 4000MHz
VOUT Slope vs RF Input Power
at 5000MHz
at 3000MHz
1000
100
1000
100
1000
100
V
= 3.6V
V
= 3.6V
V
= 3.6V
CC
CC
CC
GAIN = 2
GAIN = 2
GAIN = 2
V
= 0V
V
= 0V
V
= 0V
OS
OS
OS
T
= –40°C
T
A
= –40°C
A
T
= –40°C
A
T
= 25°C
T
= 25°C
T
= 25°C
A
A
10
0
10
0
A
10
T
= 85°C
T = 85°C
A
A
T
= 85°C
A
0
–30 –25 –20 –15 –10 –5
0
5
10
–30 –25 –20 –15 –10 –5
0
5
10
–30 –25 –20 –15 –10 –5
0
5
10
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G20
5535 G21
5535 G19
VOUT Slope vs RF Input Power
at 6000MHz
VOUT Slope vs RF Input Power
at 7000MHz
1000
100
1000
100
V
= 3.6V
V
= 3.6V
CC
GAIN = 2
= 0V
CC
GAIN = 2
= 0V
V
OS
V
OS
T
A
= –40°C
T
= 25°C
T
= 25°C
T
= –40°C
A
A
A
10
10
T
A
= 85°C
T
A
= 85°C
0
0
–30 –25 –20 –15 –10 –5
0
5
10
–30 –25 –20 –15 –10 –5
0
5
10
RF INPUT POWER (dBm)
RF INPUT POWER (dBm)
5535 G22
5535 G23
5535f
5
LTC5535
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RF Input Impedance (Pin = –25 dBm, V = 3.6V, T = 25
°C)
IN
CC
A
FREQUENCY
GHz
RESISTANCE
REACTANCE
FREQUENCY
GHz
RESISTANCE
REACTANCE
(Ω)
(Ω)
(Ω)
(Ω)
0.600
0.728
0.856
0.984
1.112
1.240
1.368
1.496
1.624
1.752
1.880
2.008
2.136
2.264
2.392
2.520
2.648
2.776
2.904
3.032
3.160
3.288
3.416
3.544
3.672
3.800
3.928
4.056
4.184
4.312
4.440
4.568
4.696
4.824
4.952
5.080
5.208
5.336
5.464
156.68
135.50
118.45
104.52
92.64
83.35
75.36
68.73
63.20
58.56
54.68
51.40
49.37
47.90
44.55
41.81
39.91
38.28
37.15
35.94
34.94
33.78
32.33
31.04
29.80
28.71
27.85
27.29
26.34
25.48
24.95
24.50
23.95
23.67
23.47
23.40
23.39
23.50
23.72
–127.09
–122.64
–116.93
–110.97
–105.02
–98.29
–92.40
–86.52
–80.86
–75.65
–70.56
–65.59
–60.89
–57.97
–55.20
–51.32
–47.76
–44.50
–41.35
–38.47
–35.89
–33.39
–30.93
–28.47
–25.80
–23.12
–20.43
–18.04
–15.61
–13.05
–10.41
–7.76
5.592
5.720
5.848
5.976
6.104
6.232
6.360
6.488
6.616
6.744
6.872
7.000
24.09
24.60
25.20
26.02
26.80
27.27
27.22
26.98
26.79
26.75
26.85
27.06
12.74
15.21
17.55
19.70
21.46
22.90
24.41
26.35
28.58
31.11
33.76
36.48
S11 Forward Reflection
Impedance
–5.20
–2.56
0.03
5535 TA03
0.6000GHz-7.000GHz
2.59
5.13
7.64
10.20
5535f
6
LTC5535
U W
TYPICAL PERFOR A CE CHARACTERISTICS
RF Input Impedance (Pin = 0dBm, V = 3.6V, T = 25
°C)
IN
CC
A
FREQUENCY
(GHz)
RESISTANCE
REACTANCE
FREQUENCY
GHz
RESISTANCE
REACTANCE
(Ω)
(Ω)
(Ω)
(Ω)
0.600
0.728
0.856
0.984
1.112
1.240
1.368
1.496
1.624
1.752
1.880
2.008
2.136
2.264
2.392
2.520
2.648
2.776
2.904
3.032
3.160
3.288
3.416
3.544
3.672
3.800
3.928
4.056
4.184
4.312
4.440
4.568
4.696
4.824
4.952
5.080
5.208
5.336
5.464
176.00
148.00
125.00
108.00
94.80
83.20
74.60
67.50
61.40
56.80
52.70
49.30
47.10
45.30
42.40
39.60
37.70
36.30
35.10
34.00
33.20
32.10
30.70
29.10
27.70
26.60
25.70
25.00
24.10
23.50
22.90
22.40
22.00
21.70
21.30
21.20
21.20
21.20
21.40
–174.00
–165.00
–153.00
–143.00
–133.00
–123.00
–115.00
–107.00
–99.00
–92.90
–86.10
–80.00
–74.40
–70.00
–66.70
–62.30
–58.60
–55.00
–51.00
–47.70
–44.60
–41.80
–39.50
–36.70
–33.70
–30.60
–27.70
–25.10
–22.10
–19.50
–17.10
–14.00
–11.40
–8.83
5.592
5.720
5.848
5.976
6.104
6.232
6.360
6.488
6.616
6.744
6.872
7.000
21.80
22.10
22.70
23.60
24.20
24.70
24.70
24.30
24.10
24.00
24.00
24.10
7.14
9.55
12.00
14.40
15.90
17.80
19.30
21.40
23.80
26.30
28.80
31.40
S11 Forward Reflection
Impedance
–5.99
5535 TA04
0.6000GHz-7.000GHz
–3.45
–0.77
1.70
4.46
5535f
7
LTC5535
U
U
U
PI FU CTIO S
RFIN (Pin 1): RF Input Voltage. Referenced to VCC. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 600MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
VM (Pin 4): Negative Input to Output Amplifier.
VOUT (Pin 5): Detector Output.
VCC(Pin6):PowerSupplyVoltage,2.7Vto5.5V.VCCshould
be bypassed appropriately with ceramic capacitors.
GND (Pin 2): Ground.
V
OS (Pin 3): VOUT Offset Voltage Adjustment. From 0V to
200mV, VOUT does not change. Above 200mV, VOUT will
track VOS.
W
BLOCK DIAGRA
RF
SOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
V
CC
6
OUTPUT
AMPLIFIER
V
P
+
–
V
V
5
4
OUT
M
500Ω
1
RF
IN
500Ω
BIAS
RF DET
AMPLIFIER
7.5k
7.5k
50µA
5pF
+
–
+
–
V
3
OS
20k
20k
50µA
200mV
GND
2
+
5535 BD
5535f
8
LTC5535
U
W
U U
APPLICATIO S I FOR ATIO
Operation
The VOS input controls the DC input voltage to the output
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The output amplifier
is initially trimmed to 200mV (Gain = 2) with VOS con-
nected to ground.
The LTC5535 RF detector integrates several functions to
provide RF power detection over frequencies ranging
from600MHzto7GHz.Thesefunctionsincludeaninternal
frequency compensated output amplifier, an RF Schottky
diodepeakdetectorandalevelshiftamplifiertoconvertthe
RF input signal to DC. The LTC5535 has both gain setting
and voltage offset adjustment capabilities.
The VOS pin is used to change the initial VOUT starting
voltage. This function, in combination with gain adjust-
ment enables the LTC5535 output to span the input range
of a variety of analog-to-digital converters. VOUT will not
change until VOS exceeds 200mV. The starting voltage at
Output Amplifier
V
OUT for VOS >200mV is:
The output amplifier is capable of supplying typically
20mA into a load. The negative terminal VM is brought out
to a pin for gain selection. External resistors connected
between VOUT and VM (RA) and VM to ground (RB) will set
the gain of this amplifier.
VOUT = 0.5 • VOS • Gain
where gain is the output amplifier gain. For a gain of 2,
VOUT will exactly track VOS above 200mV.
Gain = 1 + RA/RB
RF Detector
The amplifier is not unity gain stable; a minimum gain of
two is required. The output amplifier has a bandwidth of
20MHz with a gain of 2. For increased gain applications,
the bandwidth is reduced according to the formula:
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 50µA and drives a
5pF internal peak detector capacitor.
Bandwidth = 40MHz/(Gain) = 40MHz • RB/(RA + RB)
For stable operation the gain setting resistors should be
low values and the board capacitance on VM should be
minimized. RB is recommended to be no greater than
500Ω for all gain settings.
Demo Board Schematic
V
CC
2.7V TO 5.5V
C1
0.1µF
C4
LTC5535ES6
39pF
RF
IN
C2
100pF
1
2
3
6
5
4
RF
V
IN
CC
R1
(OPT)
GND V
V
OUT
OUT
R2
R
LOAD
500Ω
V
V
M
OS
(OPT)
1%
OFFSET
ADJUSTMENT
R3
500Ω
1%
GND
5535 DB
5535f
9
LTC5535
W U U
U
APPLICATIO S I FOR ATIO
Applications
Operation at higher RF input frequencies is achievable.
Consult factory for more information.
TheLTC5535canbeusedasaself-standingsignalstrength
measuring receiver for a wide range of input signals from
–32dBmto10dBmforfrequenciesfrom600MHzto7GHz.
The LTC5535 can be used as a demodulator for AM and
ASKmodulatedsignals.Dependingonspecificapplication
needs,theRSSIoutputcanbesplitbetweentwobranches,
providing AC-coupled data (or audio) output and a
DC-coupled RSSI output for signal strength measure-
ments and AGC.
The LTC5535 offers increased baseband bandwidth com-
pared to other Schottky diode detectors. Table 1 shows
that the baseband (demodulation) bandwidth is typically
12MHzatanRFinputsignallevelof–10dBm.Thebaseband
bandwidth is largely independent of the RF input signal
frequency over the range of 600MHz to 7GHz.
Table 1
INPUT LEVEL
(dBm)
OUTPUT BW
–3dB (MHz)
FREQUENCY
(GHz)
GAIN
–20
–10
–5
12.5
12
3
3
3
3
2
2
2
2
11
0
9.5
5535f
10
LTC5535
U
PACKAGE DESCRIPTIO
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
2.90 BSC
(NOTE 4)
0.62
MAX
0.95
REF
1.22 REF
1.4 MIN
1.50 – 1.75
2.80 BSC
3.85 MAX 2.62 REF
(NOTE 4)
PIN ONE ID
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
0.30 – 0.45
6 PLCS (NOTE 3)
0.95 BSC
0.80 – 0.90
0.20 BSC
DATUM ‘A’
0.01 – 0.10
1.00 MAX
0.30 – 0.50 REF
1.90 BSC
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
5535f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LTC5535
RELATED PARTS
PART NUMBER DESCRIPTION
COMMENTS
Infrastructure
LT®5511
LT5512
LT5514
LT5515
LT5516
LT5517
LT5519
LT5520
LT5521
LT5522
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
Digitally Controlled Gain, 47dBm OIP3 at 100MHz
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
24dBm IIP3, –42dBm LO Leakage at 1950MHz
DC-3GHz High Signal Level Downconverting Mixer
Ultralow Distortion IF Amplifier/ADC Driver
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
40MHz to 900MHz Direct Conversion Quadrature Demodulator
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
Very High Linearity Active Mixer
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
LTC5508
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
300MHz to 7GHz Precision RF Power Detector
50MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5532
Precision V
Offset Control, Adjustable Gain and Offset
OUT
LT5534
60dB Dynamic Range, Temperature Compensated
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
LT5506
LT5546
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A
LTC1758
LTC1957
LTC4400
RF Power Controller
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
Multiband GSM/DCS/GPRS Mobile Phones
RF Power Controller
RF Power Controller
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4402
LTC4403
RF Power Controller for EDGE/TDMA
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 450kHz Loop BW
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5535f
LT/TP 07 04 1K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
12
●
●
© LINEAR TECHNOLOGY CORPORATION 2004
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
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