RH1011FD [Linear]

Voltage Comparator;


型号：	RH1011FD
厂家：	Linear
描述：	Voltage Comparator
文件：	总4页 (文件大小：66K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RH1011

Voltage Comparator

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ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

The RH1011 is a general purpose comparator with signifi-

cantly better input characteristics than the LM111. Al-

thoughpincompatiblewiththeLM111, itoffersfourtimes

lower bias current, six times lower offset voltage and five

times higher voltage gain.

Supply Voltage (Pin 8 to Pin 4) ............................... 36V

Output to Negative Supply (Pin 7 to Pin 4) ............. 35V

Ground to Negative Supply (Pin 1 to Pin 4) ............ 30V

Differential Input Voltage ....................................... ±35V

Voltage at STROBE Pin (Pin 6 to Pin 8) .................... 5V

Input Voltage (Note 1) ....................... Equal to Supplies

Output Short-Circuit Duration............................. 10 sec

Operating Temperature Range

The wafer lots are processed to Linear Technology’s in-

house Class S flow to yield circuits usable in stringent

military applications.

(Note 2) ........................................... –55°C to 125°C

Storage Temperature Range ................. –65°C to 150°C

Lead Temperature (Soldering, 10 sec).................. 300°C

, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.

All other trademarks are the property of their respective owners.

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BUR -I CIRCUIT

15V

1.3k

50k

100k

50k

–

200Ω

50k

604Ω

RH1011 BI

–15V

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PACKAGE I FOR ATIO

TOP VIEW

GND

+INPUT

–INPUT

10 V

GND

+INPUT

–INPUT

OUTPUT

GND

OUTPUT

–

OUTPUT

BALANCE/

STROBE

BALANCE/

STROBE

BALANCE/

STROBE

+INPUT

–

BALANCE

–INPUT

–

BALANCE

–

J8 PACKAGE

8-LEAD CERDIP

W PACKAGE

10-LEAD CERPAC

H PACKAGE

8-LEAD TO-5 METAL CAN

RH1011

(Preirradiation) (Note 10)

TABLE 1: ELECTRICAL CHARACTERISTICS

T = 25

SUB-

GROUP

–55°C ≤ T_A≤ 125°C

MIN TYP MAX

SYMBOL PARAMETER

CONDITIONS

R ≤ 50kΩ

NOTES MIN TYP MAX GROUP

UNITS

Input Offset Voltage

1.5

2.0

3.0

2,3

Input Offset Current

Input Bias Current

3,4

2,3

ΔV

Input Offset Voltage Drift

≤ T ≤ T

MAX

5,9

μV/°C

V/mV

ΔT

MIN

Large Signal Voltage Gain V = ±15V, R = 1kΩ,

200

VOL

–10V ≤ V

≤ 14.5V

OUT

V = 5V, R = 500Ω,

0.5V ≤ V

≤ 4.5V

OUT

CMRR

Common Mode Rejection

Ratio

Input Voltage Range

V = ±15V

8,9

–14.5

0.5

3.0

–14.5

0.5

3.0

V = Single 5V

Response Time

6,9

250

Output Saturation Voltage

= –5mV, I = 8mA

SINK

= 50mA

0.4

1.5

0.5

1.5

2,3

SINK

Output Leakage Current

= 5mV, V

= –15V,

500

2,3

GND

= 20V

OUT

Positive Supply Current

Negative Supply Current

Strobe Current

4.0

2.5

μA

Minimum to Ensure Output 7,9,11 500

Transistor is Turned Off

Input Capacitance

(Postirradiation) (Note 10)

TABLE 1A: ELECTRICAL CHARACTERISTICS

10Krad(Si)

20Krad(Si)

50Krad(Si) 100Krad(Si) 200Krad(Si)

SYMBOL PARAMETER

CONDITIONS

NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS

Input Offset Voltage

Input Offset Current

Input Bias Current

1.5

2.5

100

150

200

300

Large-Signal Voltage

Gain

R = 1kΩ,

200

150

100

V/mV

VOL

–10V ≤ V

≤ 14.5V

OUT

CMRR

Common Mode

Rejection Ratio

Input Voltage Range

V = ±15V

8,9 –14.5 13 –14.5 13 –14.5 13 –14.5 13 –14.5 13

V = Single 5V

0.5

3.0

0.5

3.0

0.5 3.0

0.5

3.0 0.5

3.0

Output Saturation

Voltage

= –5mV, I = 8mA

SINK

= 50mA

0.4

1.5

0.4

1.5

0.4

1.5

0.4

1.5

0.4

1.5

SINK

Output Leakage

Current

= 5mV, V

= –15V

100

GND

= 20V

OUT

RH1011

(Postirradiation) (Note 10)

TABLE 1A: ELECTRICAL CHARACTERISTICS

10Krad(Si)

20Krad(Si)

50Krad(Si) 100Krad(Si) 200Krad(Si)

SYMBOL PARAMETER

Positive Supply Current

CONDITIONS

NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS

4.0

2.5

4.0

2.5

4.0

2.5

4.0

2.5

4.0

2.5

μA

Negative Supply Current

Strobe Current

Minimum to Ensure Output 7,9,11 500

Transistor is Turned Off

500

Input Capacitance

6 (Typ)

Note 1: Inputs may be clamped to supplies with diodes so that maximum

input voltage actually exceeds supply voltage by one diode drop. See Input

Protection discussion in the LT^®1011 data sheet.

Note 7: Do not short the STROBE pin to ground. It should be current

driven at 3mA to 5mA for the shortest strobe time. Currents as low as

500μA will strobe the RH1011 if speed is not important. External leakage

on the STROBE pin in excess of 0.2μA when the strobe is “off” can cause

offset voltage shifts.

Note 8: See graph, Input Offset Voltage vs Common Mode Voltage on the

LT1011 data sheet.

Note 9: Guaranteed by design, characterization or correlation to other

Note 2: T

= 150°C.

JMAX

Note 3: Output is sinking 1.5mA with V

= 0V.

OUT

Note 4: These specifications apply for all supply voltages from a single 5V

to ±15V, the entire input voltage range and for both high and low output

states. The high state is I

= 100μA, V

= (V – 1V) and the low state

SINK

OUT

tested parameters.

is I

= 8mA, V

= 0.8V. Therefore, this specication defines a worst-

SINK

OUT

–

case error band that includes effects due to common mode signals,

voltage gain and output load.

Note 10: V = ±15V, V = 0V, R = 0Ω, T = 25°C, V

= V , output at

GND

Pin 7, unless otherwise noted.

Note 5: Drift is calculated by dividing the offset difference measured at

Note 11: V = 0V.

GND

minimum and maximum temperatures by the temperature difference.

Note 6: Response time is measured with a 100mV step and 5mV

overdrive. The output load is a 500Ω resistor tied to 5V. Time

measurement is taken when the output crosses 1.4V.

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TABLE 2: ELECTRICAL TEST REQUIRE E TS

PDA Test Notes

MIL-STD-883 TEST REQUIREMENTS

SUBGROUP

1*,2,3,4

1,2,3,4

The PDA is specified as 5% based on failures from group A, subgroup 1,

tests after cooldown as the final electrical test in accordance with method

5004 of MIL-STD-883 Class B. The verified failures (including Delta

parameters) of group A, subgroup 1, after burn-in divided by the total

number of devices submitted for burn-in in that lot shall be used to

determine the percent for the lot.

Final Electrical Test Requirements (Method 5004)

Group A Test Requirements (Method 5005)

Group B and D End Point Electrical Parameters

(Method 5005)

1,2,3

* PDA Applies to subgroup 1. See PDA Test Notes.

Linear Technology Corporation reserves the right to test to tighter limits

than those given.

TOTAL DOSE BIAS CIRCUIT

12V

5.1k

12Ω

5.1k

–

12Ω

–12V

RH1011 TDBC

Information furnished by Linear Technology Corporation is believed to be accurate and reliable.

However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-

tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.

RH1011

TYPICAL PERFORMANCE CHARACTERISTICS

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Input Offset Current

Input Offset Voltage

Input Bias Current

= ±15V

= 0Ω

= ±15V

= 0V

300

200

100

= 0V

(3 TYPICAL UNITS)

–10

–20

–30

–40

–2

–4

–6

100

1000

100

1000

100

1000

TOTAL DOSE KRAD (Si)

RH1011 G01

RH1011 G03

RH1011 G02

Common Mode Rejection Ratio

Voltage Gain

700

600

500

400

300

200

100

130

120

110

100

= ±15V

= 1k

= –14.5V TO 13V

= 0V

100

1000

100

1000

TOTAL DOSE KRAD (Si)

RH1011 G04

RH1011 G05

I.D. No. 66-10-0159 Rev. D 0308

LT/LT 0308 REV D • PRINTED IN USA

LinearTechnology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417

●

(408) 432-1900 FAX: (408) 434-0507 www.linear.com

RH1011FD [Linear]

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