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RH1078MH#PBF [Linear]

IC DUAL OP-AMP, 1000 uV OFFSET-MAX, MBCY8, Operational Amplifier;
RH1078MH#PBF
型号： RH1078MH#PBF
厂家： Linear    Linear
描述：

IC DUAL OP-AMP, 1000 uV OFFSET-MAX, MBCY8, Operational Amplifier

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RH1078M  
Micropower, Dual, Single Supply  
Precision Op Amp  
U
W W W  
U
DESCRIPTIO  
ABSOLUTE AXI U RATI GS  
The RH1078M is a micropower dual op amp in the  
standard 8-pin configuration. This device is optimized for  
single supply operation at 5V. Specifications for ±15V are  
also provided.  
Supply Voltage ..................................................... ±22V  
Differential Input Voltage ...................................... ±30V  
Input Voltage ...............Equal to Positive Supply Voltage  
...............................0.5V Below Negative Supply Voltage  
Output Short-Circuit Duration ......................... Indefinite  
Operating Temperature Range ............. –55°C to 125°C  
Storage Temperature Range ................ –55°C to 150°C  
Lead Temperature (Soldering, 10 sec)................. 300°C  
The wafer lots are processed to LTC’s in-house Class S  
flow to yield circuits usable in stringent military applica-  
tions.  
U U  
/O  
PACKAGE RDER I FOR ATIO  
BUR -I CIRCUIT  
(Each Amplifier)  
TOP VIEW  
50k  
+
V
8
20V  
OUT A  
1
3
OUT B  
7
5
–
6
2
–IN A  
–IN B  
100Ω  
+IN A  
+IN B  
+
4
–
V
50k  
H PACKAGE  
8-LEAD TO-5 METAL CAN  
–20V  
TOTAL DOSE BIAS CIRCUIT  
10k  
15V  
–
10k  
+
8V  
–15V  
Note: For ordering information contact LTC.  
1
RH1078M  
(Preirradiation)  
TABLE 1: ELECTRICAL CHARACTERISTICS  
VS = 5V, VCM = 0.1V, VOUT = 1.4V unless otherwise specified.  
–55  
°C  
≤
T
A
≤
125°C  
SUB-  
T = 25  
°C  
SUB-  
A
SYMBOL  
PARAMETER  
CONDITIONS  
NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP  
UNITS  
µV  
V
OS  
Input Offset Voltage  
120  
4
370  
2, 3  
∆V  
∆Temp  
Average Tempco of  
Offset Voltage  
0.5  
µV/°C  
OS  
∆V  
∆Time  
Long Term V Stability  
0.5  
0.5  
µV/Month  
OS  
OS  
I
I
Input Offset Current  
Input Bias Current  
Input Noise Voltage  
0.8  
15  
1
1
1.5  
18  
2, 3  
2, 3  
nA  
nA  
OS  
B
e
n
0.1Hz to 10Hz  
1
µVP-P  
Input Noise Voltage Density f = 10Hz  
1
1
25  
24  
nV/√Hz  
nV/√Hz  
O
f = 1kHz  
O
i
n
Input Noise Current  
0.1Hz to 10Hz  
1
2.6  
pAP-P  
Input Noise Current Density f = 10Hz  
1
1
0.07  
0.025  
pA/√Hz  
pA/√Hz  
O
f = 1kHz  
O
R
IN  
Input Resistance Differential  
Common Mode  
2
2
600  
5
MΩ  
GΩ  
Input Voltage Range  
2
2
3.5  
0
1
1
3.20  
0.05  
2, 3  
2, 3  
V
V
CMRR  
PSRR  
Common-Mode  
Rejection Ratio  
V
V
= 0V to 3.5V  
= 0.05V to 3.2V  
94  
1
dB  
dB  
CM  
CM  
88  
94  
2, 3  
2, 3  
Power Supply  
Rejection Ratio  
V = 2.3V to 12V  
100  
1
dB  
dB  
S
V = 3.1V to 12V  
S
A
VOL  
Large-Signal Voltage Gain  
V = 0.03V to 4V, No Load  
150  
120  
1
1
V/mV  
V/mV  
V/mV  
V/mV  
O
V = 0.03V to 3.5V, R = 50k  
O
L
V = 0.05V to 4V, No Load  
80  
60  
2, 3  
2, 3  
O
V = 0.05V to 3.5V, R = 50k  
O
L
V
OUT  
Output Voltage Swing  
Output Low, No Load  
6
2
130  
4
4
4
4
4
8
5, 6  
mV  
mV  
mV  
V
Output Low, 2k to GND  
Output Low, I = 100µA  
170  
5, 6  
5, 6  
5, 6  
SINK  
Output High, No Load  
Output High, 2k to GND  
4.2  
3.5  
3.9  
3.0  
V
SR  
Slew Rate  
A = 1, V = ±2.5V  
0.04  
4
V/µs  
kHz  
µA  
V
S
GBW  
Gain-Bandwidth Product  
Supply Current  
f ≤ 20kHz  
O
200  
130  
I
per Amplifier  
75  
1
95  
2, 3  
S
Channel Separation  
Minimum Supply Voltage  
∆V = 3V, R = 10k  
dB  
IN  
L
3
2.3  
V
2
RH1078M  
(Preirradiation)  
TABLE 1: ELECTRICAL CHARACTERISTICS  
VS =  
±
15V unless otherwise specified.  
–55  
°C  
≤
T
A
≤
125°C  
SUB-  
T = 25  
°C  
SUB-  
A
SYMBOL  
PARAMETER  
CONDITIONS  
NOTES MIN TYP MAX GROUP MIN TYP MAX GROUP  
UNITS  
µV  
V
Input Offset Voltage  
350  
4
600  
2, 3  
OS  
∆V  
∆Temp  
Average Tempco of  
Offset Voltage  
0.6  
µV/°C  
OS  
I
I
Input Offset Current  
Input Bias Current  
Input Voltage Range  
0.8  
15  
1
1.5  
18  
2, 3  
2, 3  
nA  
nA  
OS  
B
13.5  
–15.0  
1
1
V
V
CMRR  
PSRR  
Common-Mode  
Rejection Ratio  
V
V
= 13.5V, –15V  
= 13V, –14.9V  
97  
1
dB  
dB  
CM  
CM  
90  
94  
2, 3  
2, 3  
Power Supply  
Rejection Ratio  
V = 5V, 0V to ±18V  
100  
1
dB  
S
A
V
Large-Signal Voltage Gain  
V = ±10V, R = 50k  
1000  
300  
1
1
V/mV  
V/mV  
V/mV  
VOL  
OUT  
O
L
V = ±10V, R = 2k  
O
L
V = ±10V, R = 5k  
150  
2, 3  
O
L
Output Voltage Swing  
R = 50k  
±13  
±11  
4
4
V
V
V
L
R = 2k  
L
R = 5k  
L
±11  
5, 6  
2, 3  
SR  
Slew Rate  
0.06  
4
1
V/µs  
µA  
I
Supply Current  
Per Amplifier  
100  
125  
S
Note 1: All noise parameters are for V = ±2.5V, V = 0V.  
Note 2: This parameter is guaranteed by design, characterization or  
correlation to other tested parameters.  
Note 3: Power supply rejection ratio is measured at the minimum supply  
voltage. The op amps actually work at 1.8V supply but with a typical offset  
skew of –300µV.  
S
O
3
RH1078M  
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation)  
VS = 5V, 0V, VCM = 0.1V, V0 = 1.4V, TA = 25°C unless otherwise noted.  
100KRAD(Si)  
MAX MIN MAX UNITS  
10KRAD(Si) 25KRAD(Si)  
50KRAD(Si)  
75KRAD(Si)  
SYMBOL PARAMETER  
CONDITIONS  
MIN  
MAX MIN  
MAX MIN MAX MIN  
V
Input Offset Voltage  
Input Offset Current  
Input Bias Current  
Input Voltage Range  
120  
2
175  
8
250  
13  
500  
18  
µV  
nA  
nA  
V
OS  
I
I
OS  
20  
3.5  
89  
40  
80  
100  
B
3.5  
91  
3.5  
87  
3.5  
85  
CMRR  
PSRR  
Common-Mode  
Rejection Ratio  
V
= 0V to 3.5V  
dB  
CM  
Power Supply  
Rejection Ratio  
V = 2.3V to 12V  
100  
100  
98  
88  
dB  
S
A
Large-Signal  
Voltage Gain  
V = 0.03V to 4V, No Load  
150  
150  
50  
100  
20  
50  
10  
V/mV  
V/mV  
VOL  
OUT  
O
V = 0.03V to 3.5V, R = 50k 120  
O
L
V
Output Voltage  
Swing  
Output Low, No Load  
6
2
9
2
140  
13  
2
150  
20  
2
160  
mV  
mV  
mV  
V
Output Low, 2k to GND  
Output Low, I = 100µA  
130  
4.2  
3.5  
SINK  
Output High, No Load  
Output High, 2k to GND  
4.2  
3.5  
4.2  
3.5  
4.2  
3.5  
V
S
Slew Rate  
A = 1, V = ±2.5V  
0.04  
0.03  
75  
0.02  
0.01  
V/µs  
µA  
R
V
S
I
Supply Current  
per Amplifier  
75  
75  
75  
S
4
RH1078M  
TABLE 1A: ELECTRICAL CHARACTERISTICS (Postirradiation)  
VS = ±15V unless otherwise noted.  
100KRAD(Si)  
10KRAD(Si) 25KRAD(Si)  
50KRAD(Si)  
75KRAD(Si)  
SYMBOL PARAMETER  
CONDITIONS  
MIN  
MAX MIN  
MAX MIN  
MAX MIN  
MAX MIN  
MAX UNITS  
V
Input Offset Voltage  
Input Offset Current  
Input Bias Current  
Input Voltage Range  
350  
2
500  
8
650  
13  
800  
18  
1000  
23  
µV  
nA  
nA  
OS  
I
I
OS  
20  
40  
80  
100  
120  
B
13.5  
–15.0  
13.5  
–15.0  
13.5  
–15.0  
13.5  
–15.0  
13.5  
–15.0  
V
V
CMRR  
PSRR  
Common-Mode  
Rejection Ratio  
V
= 13.5V, –15V  
94  
92  
90  
88  
86  
dB  
CM  
Power Supply  
Rejection Ratio  
V = 5V, 0V to ±18V  
S
100  
100  
98  
88  
78  
dB  
A
V
Large-Signal  
Voltage Gain  
V = 10V, R = 50k  
1000  
300  
700  
200  
400  
120  
150  
45  
50  
15  
V/mV  
V/mV  
VOL  
OUT  
O
L
V = 10V, R = 2k  
O
L
Output Voltage  
Swing  
R = 50k  
±13  
±11  
±13  
±11  
±13  
±11  
±13  
±11  
±13  
±10  
V
V
L
R = 2k  
L
SR  
Slew Rate  
0.05  
0.04  
0.03  
0.02  
100  
0.01  
V/µs  
µA  
I
Supply Current  
per Amplifier  
100  
100  
100  
100  
S
5
RH1078M  
W U  
TABLE 2: ELECTRICAL TEST REQUIRE E TS  
PDA Test Notes  
MIL-STD-883 TEST REQUIREMENTS  
SUBGROUP  
1*,2,3,4,5,6  
1,2,3,4,5,6  
1,2,3  
The PDA is specified as 5% based on failures from group A, subgroup 1, tests  
after cooldown as the final electrical test in accordance with method 5004 of  
MIL-STD-883ClassB.TheverifiedfailuresofgroupA,subgroup1,afterburn-  
in divided by the total number of devices submitted for burn-in in that lot shall  
be used to determine the percent for the lot.  
Final Electrical Test Requirements (Method 5004)  
Group A Test Requirements (Method 5005)  
Group C and D End Point Electrical Parameters  
(Method 5005)  
Linear Technology Corporation reserves the right to test to tighter limits than  
those given.  
* PDA Applies to subgroup 1. See PDA Test Notes.  
U
TYPICAL APPLICATIONS  
Input Offset Voltage  
Input Offset Current  
1000  
20  
750  
500  
15  
10  
250  
5
0
0
–250  
–500  
–750  
–1000  
–5  
–10  
–15  
–20  
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G1  
1078M • G2  
Input Bias Current  
Common-Mode Rejection Ratio  
0
–20  
130  
120  
110  
100  
90  
–40  
–60  
–80  
–100  
–120  
–140  
–160  
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G3  
1078M • G4  
6
RH1078M  
U
TYPICAL APPLICATIONS  
Power Supply Rejection Ratio  
Large-Signal Voltage Gain  
140  
150  
140  
130  
120  
110  
100  
90  
130  
120  
110  
100  
90  
V
V
= ±15V  
= ±10V  
= 2k  
S
O
L
R
V
= 5V, 0V  
S
V
= 0.03V TO 3.5V  
O
R
= 50k  
L
80  
70  
80  
60  
70  
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G5  
1078M • G6  
Gain-Bandwidth Product  
Slew Rate  
400  
350  
300  
250  
200  
150  
100  
50  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
0.02  
0
V
= ±15V  
S
V
S
= ±15V  
V
S
= 5V, 0V  
0
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G8  
1078M • G7  
10Hz Noise Density  
Positive Output Voltage Swing  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
V
= ±15V  
V
S
= ±15V  
R
= 50k  
S
L
R
= 2k  
L
60  
6
40  
4
20  
2
0
0
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G9  
1078M • G10  
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.  
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-  
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.  
7
RH1078M  
U
TYPICAL APPLICATIONS  
Output Voltage Swing Low,  
No Load  
Negative Output Voltage Swing  
0
26  
24  
20  
18  
16  
12  
8
V
= ±15V  
V
= 5V, 0V  
S
S
–2  
–4  
–6  
–8  
–10  
–12  
–14  
–16  
R
= 2k  
100  
L
4
R
= 50k  
L
0
1
10  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G11  
1078M • G12  
Output Voltage Swing Low,  
2k to GND  
Output Voltage Swing Low,  
ISINK = 100mA  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
160  
140  
120  
100  
80  
V
= 5V, 0V  
V
= 5V, 0V  
S
S
60  
40  
20  
0
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G13  
1078M • G14  
Output Voltage Swing High  
Supply Current  
4.6  
4.4  
4.2  
4.0  
3.8  
3.6  
3.4  
3.2  
3.0  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 5V, 0V  
S
NO LOAD  
V
= 15V  
S
2k TO GND  
V
= 5V, 0V  
S
1
10  
100  
1000  
1
10  
100  
1000  
TOTAL DOSE-KRADs (Si)  
TOTAL DOSE-KRADs (Si)  
1078M • G15  
1078M • G16  
I.D. No. 66-10-0100 Rev. E 0798  
rh1078me LT/TP 0798 500 REV E • PRINTED IN USA  
Linear Technology Corporation  
●
1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408)432-1900  
8
●
●
FAX: (408) 434-0507 TELEX: 499-3977 www.linear-tech.com  
LINEAR TECHNOLOGY CORPORATION 1994  

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