MMD200S [MACMIC]
200A Rectifier Diode Module;型号: | MMD200S |
厂家: | MACMIC |
描述: | 200A Rectifier Diode Module |
文件: | 总3页 (文件大小:196K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MMD200S
200A Rectifier Diode Module
RoHS Compliant
JANUARY 2014
Version 04
FEATURES
APPLICATIONS
□ Low Forward Voltage
□ Field Supply For DC Motors
□ High Surge Current Capability
□ Low Leakage Current
□ Line Rectifiers For Transistorized AC Motor Controllers
□ Non-controllable Rectifiers For AC/DC Converter
□ Low Inductance Package
MODULE TYPE
Circuit Diagram
VRRM (Repetitive Peak
VRSM (Non-Repetitive
Unit
Reverse Voltage)
Peak Reverse Voltage)
B
DK
MMD200S120B MMD200S120DK
MMD200S140B MMD200S140DK
MMD200S160B MMD200S160DK
MMD200S180B MMD200S180DK
1200
1400
1600
1800
1300
1500
1700
1900
TYPE
`V
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
Symbol
IF(AV)
Parameter
Test Conditions
Values
Unit
Average Forward Current
200
Single phase, half wave, 180°conduction,
Tc= 85°C
IF(RMS)
R.M.S. Forward Current
Non-Repetitive Surge
Forward Current
310
A
6500
1/2 cycle, 50HZ, peak value Tc =45°C
IFSM
7000
211.2
203.3
1/2 cycle, 60HZ, peak value Tc =45°C
1/2 cycle, 50HZ, peak value Tc =45°C
1/2 cycle, 60HZ, peak value Tc =45°C
KA2s
KA2s
I2t
I2t (For Fusing)
PD
Power Dissipation
781
-40 to +150
-40 to +125
3000
W
°C
TJ
Junction Temperature
Storage Temperature Range
Isolation Breakdown Voltage
Module-to-Sink
TSTG
VISO
Torque
Torque
Rth
°C
AC, 50Hz(R.M.S), t=1minute
Recommended(M6)
Recommended(M6)
V
3~5
N.m
N.m
K /W
g
Module Electrodes
3~5
Junction-to-Case Thermal Resistance
0.16
(
)
J-C
Weight
170
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMD200S
ELECTRICAL AND THERMAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
VR= VRRM
Min.
Typ.
Max.
Unit
µA
mA
V
500
IRM
Max.Reverse Leakage Current
Forward Voltage
10
1.5
0.8
1.0
VR= VRRM , TJ=125°C
IF=600A
VF
VT0
rT
For power-loss calculations only
TJ=125°C
V
mΩ
600
300
240
180
120
60
Single Phase
500
400
Three-Phase
DC
TJ=125°C
300
200
100
Per Diode
Max.
0.4
TJ=25°C
0
0
0
0
120
F(AV)(A)
160
200
0.8
VF(V)
Figure1. Forward current vs.voltage drop
1.2
1.6
40
80
I
2.0
Figure2. Diode Power dissipation vs. IF(AV)
250
200
150
100
7000
6000
5000
4000
50Hz
Single Phase
3000
2000
1000
0
50
0
1
10
Cycles
25
75
TC(°C)
Figure4. Forward current vs.Case temperature
125
175
100
Figure3. Max Non-Repetitive Forward Surge Current
- 2 -
MMD200S
1
0.1
0.01
0.001
0.001
10
0.01
0.1
1
Rectangular Pulse Duration (seconds)
Figure5. Transient Thermal Impedance
Dimensions in Millimeters
Figure6. Package Outline
- 3 -
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