MMK160S160B [MACMIC]

160A Thyristor/Diode Module;


型号：	MMK160S160B
厂家：	MACMIC
描述：	160A Thyristor/Diode Module
文件：	总4页 (文件大小：455K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMK160S

160A Thyristor/Diode Module

RoHS Compliant

May 2015

Version 01

APPLICATIONS

PRODUCT FEATURES

ꢀ

Electrically Isolated by DBC Ceramic

High Surge Current Capability

Low Inductance Package

ꢀ

DC Motor Control and Drives

Battery Charges ,Heater controls,Light dimmers

Static switches

MAXIMUM VOLTAGE RATINGS

Module Type

MMK160S120B MMK160S120UK MMK160S120UA

MMK160S140B MMK160S140UK MMK160S140UA

MMK160S160B MMK160S160UK MMK160S160UA

T _C=25°C unless otherwise specified

V_RRM/V_DRM

1200

V_RSM

1300

1500

1700

Unit

1400

1600

ABSOLUTE MAXIMUM RATINGS (Thyristor)

Symbol

I_T(AV)

Parameter/Test Conditions

Values

160

Unit

Average On State Current

Single phase, half wave, 180°conduction, Tc= 80℃

I_T(RMS)

R.M.S. On State Current

250

Non-Repetitive Surge On-State Current

I_TSM

1/2 cycle, 50/60HZ, peak value, Tc =45℃

1/2 cycle, 50/60HZ, peak value ,Tc =45℃

3300/3600

54.4/53.7

-40 to +125

I²t

T_J

KA²S

For Fusing

Junction Temperature(Thyristor)

℃

ABSOLUTE MAXIMUM RATINGS (Diode)

Symbol

I_F(AV)

Parameter/Test Conditions

Values

160

Unit

Average Forward Current

Single phase, half wave, 180°conduction, Tc= 95℃

I_F(RMS)

R.M.S. Forward Current

250

Non-Repetitive Surge Forward Current

I_FSM

1/2 cycle, 50/60HZ, peak value, Tc =45℃

1/2 cycle, 50/60HZ, peak value ,Tc =45℃

5500/6000

151.2/149.4

-40 to +150

I²t

T_J

KA²S

For Fusing

Junction Temperature(Diode)

℃

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

MMK160S

ELECTRICAL CHARACTERISTICS (Thyristor)

T _C=25°C unless otherwise specified

Symbol

I_DRM

Parameter/Test Conditions

Min. Typ. Max.

Unit

V_D= V_DRM, T_J= 125℃

Maximum Peak Off-State Current

Maximum Peak Reverse Current

Maximum on-state voltage drop

V_R= V_RRM, T_J= 125℃

I_RRM

I_TM=500A,td=10 ms, half sine

V_TM

1.75

0.85

2.0

V_TO

T_J= 125℃

For power-loss calculations only

r_T

mΩ

V_A=6V, R_A=1Ω,T_J= -40℃

V_A=6V, R_A=1Ω

4.0

V_GT

Max. required DC gate voltage to trigger

1.0

2.5

1.7

270

150

V_A=6V, R_A=1Ω,T_J= 125℃

V_A=6V, R_A=1Ω,T_J= -40℃

V_A=6V, R_A=1Ω

I_GT

Max. required DC gate current to trigger

V_A=6V, R_A=1Ω,T_J= 125℃

V_GD

I_GD

Max. required DC gate voltage not to trigger,V_D= V_DRM, T_J= 125℃

Max. required DC gate current not to trigger,V_D= V_DRM, T_J= 125℃

Maximum holding current

0.25

I_H

100

200

400

I_L

Maximum latching current

P_GM

P_G(AV)

I_GM

Maximum peak gate power

Maximum average gate power

3.0

Maximum peak gate current

-V_GM

Maximum peak negative gate voltage

Critical Rate of Rise of Off-State Voltage,T_J=125℃,exponential to 67% rated

V_DRM

V/μs

A/μs

dv/dt

di/dt

1000

150

Max.Rate of Rise of Turned-on Current, T_J=125℃,I_TM=500A, rated V_DRM

ELECTRICAL CHARACTERISTICS (Diode)

Symbol

Parameter/Test Conditions

Min. Typ. Max. Unit

V_R= V_RRM

0.5

I_RM

Maximum Reverse Leakage Current

Forward Voltage Drop

V_R= V_RRM, T_J= 125℃

I_F=500A

V_F

V_TO

r_T

1.5

0.88

1.25

For power-loss calculations only , T_J= 125°C

mΩ

MODULE CHARACTERISTICS

T _C=25°C unless otherwise specified

T_J

Junction Temperature

Storage Temperature Range

Isolation Breakdown Voltage

to heatsink

-40 to +125

3000

℃

T_STG

V_ISO

AC, 50Hz(R.M.S), t=1minute

Recommended（M6）

Torque

R_th(J-C)

Weight

N.m

K /W

3～5

to terminal

3～5

Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)

0.16/0.18

160

MMK160S

600

500

400

300

200

100

250

200

150

100

Thyristor

Diode

25℃

180°

120°

Thyristor

Diode

max.

θ:Conduction Angle

0.5

1.5

2.5

120

160

I_T/I_F(AV)(A)

V_TM/V_F(V)

Figure1. Forward Voltage Drop vs Forward Current

6000

Figure2. Power dissipation vs. I_T/I_F(AV)

200

160

120

180°Conduction Angle

Thyristor

Diode

5000

4000

3000

2000

1000

50H_Z

Thyristor

Diode

75 100 125 150

T_C（℃）

100

Cycles

Figure3. Diode and SCR Max Non-Repetitive Surge

Figure4. Diode I_F(AV)and SCR I_T(AV)vs.T_C

0.1

0.01

Thyristor

Diode

0.001

0.01

0.1

Rectangular Pulse Duration (S)

Figure5. Transient Thermal Impedance of Diode and SCR

MMK160S

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt:20V,20Ω

(1) PGM =200W, tp = 300us

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2ms

(4) PGM = 12 W, tp = 5 ms

tr =0.5us, tp≥6us

b)Recommended load line for

≤30% rated di/dt:15V, 40Ω

tr =1us, tp ≥6 us

T_J=-40℃

T_J=25℃

T_J=125℃

(1)

(2)

(3)

(4)

V_GD

Frequency Limited by PG(AV)

I_GD

0.1

0.001

0.01

0.1

100

Instantaneous Gate Current (A)

Figure 6. SCR Gate Characteristics

Dimensions in (mm)

Figure7. Package Outline

相关型号：