MMK200S160B [MACMIC]

MMK200S Thyristor/Diode Module;


型号：	MMK200S160B
厂家：	MACMIC
描述：	MMK200S Thyristor/Diode Module
文件：	总4页 (文件大小：408K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MMK200S

MMK200S Thyristor/Diode Module

RoHS Compliant

December

2014

Version 03

APPLICATIONS

PRODUCT FEATURES

Electrically Isolated by DBC Ceramic

High Surge Current Capability

Low Inductance Package

DC Motor Control and Drives

Battery Charges ,Heater controls,Light dimmers

Static switches

MAXIMUM VOLTAGE RATINGS

Module Type

T _C=25°C unless otherwise specified

V_RRM/V_DRM

800

V_RSM

900

Unit

MMK200S080B MMK200S080UK MMK200S080UA

MMK200S120B MMK200S120UK MMK200S120UA

MMK200S140B MMK200S140UK MMK200S140UA

MMK200S160B MMK200S160UK MMK200S160UA

MMK200S180B MMK200S180UK MMK200S180UA

MMK200S200B MMK200S200UK MMK200S200UA

MMK200S220B MMK200S220UK MMK200S220UA

1200

1300

1500

1700

1900

2100

2300

1400

1600

1800

2000

2200

ABSOLUTE MAXIMUM RATINGS (Thyristor)

Symbol

I_T(AV)

Parameter/Test Conditions

Values

200

Unit

Average On State Current

Single phase, half wave, 180°conduction, T_C= 80°C

I_T(RMS)

R.M.S. On State Current

310

Non Repetitive Surge On State Current

I_TSM

1/2 cycle, 50/60Hz, peak value, T_C=45°C

1/2 cycle, 50/60Hz, peak value ,T_C=45°C

5000/5400

125/121

-40 to +125

I²t (For Fusing)

I²t

T_J

KA²S

°C

Junction Temperature(Thyristor)

ABSOLUTE MAXIMUM RATINGS (Diode)

Symbol

I_F(AV)

Parameter/Test Conditions

Values

200

Unit

Average Forward Current

Single phase, half wave, 180°conduction, T_C= 95°C

I_F(RMS)

R.M.S. Forward Current

310

Non Repetitive Surge Forward Current

I_FSM

I²t

1/2 cycle, 50/60Hz, peak value, T_C=45°C

1/2 cycle, 50/60Hz, peak value ,T_C=45°C

6800/7300

231.2/221.1

KA²S

For Fusing

MacMic Science & Technology Co., Ltd.

Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China

Tel.：+86-519-85163708 Fax：+86-519-85162291 Post Code：213022 Website：www.macmicst.com

MMK200S

ELECTRICAL CHARACTERISTICS (Thyristor)

T _C=25°C unless otherwise specified

Symbol

I_DRM

Parameter/Test Conditions

Min. Typ. Max.

Unit

V_D= V_DRM, T_J= 125°C

Maximum Peak Off-State Current

Maximum Peak Reverse Current

Maximum on state voltage drop

V_R= V_RRM, T_J= 125°C

I_RRM

V_TM

I_TM=500A,td=10 ms, half sine

1.75

0.80

2.0

V_TO

T_J= 125°C

For power loss calculations only

r_T

mΩ

V_A=6V, R_A=1Ω,T_J= -40°C

V_A=6V, R_A=1Ω

4.0

V_GT

Max. required DC gate voltage to trigger

1.0

2.5

1.7

270

150

V_A=6V, R_A=1Ω,T_J= 125°C

V_A=6V, R_A=1Ω,T_J= -40°C

V_A=6V, R_A=1Ω

I_GT

Max. required DC gate current to trigger

V_A=6V, R_A=1Ω,T_J= 125°C

V_GD

I_GD

Max. required DC gate voltage not to trigger,V_D= V_DRM, T_J= 125°C

Max. required DC gate current not to trigger,V_D= V_DRM, T_J= 125°C

Maximum holding current

0.25

I_H

100

200

400

I_L

Maximum latching current

P_GM

P_G(AV)

I_GM

Maximum peak gate power

Maximum average gate power

3.0

Maximum peak gate current

-V_GM

Maximum peak negative gate voltage

Critical Rate of Rise of Off-State Voltage,T_J=125°C,exponential to 67% rated

V_DRM

dv/dt

di/dt

1000 V/μs

150 A/μs

Max.Rate of Rise of Turned on Current, T_J=125°C,I_TM=500A, rated V_DRM

ELECTRICAL CHARACTERISTICS (Diode)

Symbol

Parameter/Test Conditions

Min. Typ. Max. Unit

V_R= V_RRM

0.5

I_RM

Maximum Reverse Leakage Current

Forward Voltage Drop

V_R= V_RRM, T_J= 125°C

I_F=500A

V_F

V_TO

r_T

1.5

0.9

1.0

For power-loss calculations only , T_J= 125°C

mΩ

MODULE CHARACTERISTICS

T _C=25°C unless otherwise specified

T_J

Junction Temperature

Storage Temperature Range

Isolation Breakdown Voltage

to heatsink

-40 to +125

3000

°C

T_STG

V_ISO

AC, 50Hz(R.M.S), t=1minute

Recommended（M6）

Torque

R_thJC

3～5

K /W

to terminal

3～5

Junction-to-Case Thermal Resistance(Per Thyristor/Per Diode)

0.12/0.14

160

Weight

MMK200S

600

500

400

300

200

100

300

250

200

150

100

Thyristor

Diode

25°C

180°

120°

max.

Thyristor

Diode

θ:Conduction

Angle

120

160

200

V_TM/V_F(V)

I_T/I_F(AV)(A)

Figure 1. Forward Voltage Drop vs Forward

Current

Figure 2. Power dissipation vs. I_T/I_F(AV)

8000

180°

200

Thyristor

Diode

6000

160

120

4000

50Hz

2000

θ:Conduction Angle

75 100 125 150

Cycles

100

T_C（°C）

Figure 4. Diode I_F(AV)and SCR I_T(AV)vs.T_C

Figure 3. Diode and SCR Max Non-Repetitive Surge

0.1

0.01

Thyristor

Diode

0.001

0.01

0.1

Rectangular Pulse Duration (seconds)

Figure 5. Transient Thermal Impedance of Diode and SCR

MMK200S

100

Rectangular gate pulse

a)Recommended load line for

rated di/dt:20V,20Ω

(1) PGM =200W, tp = 500us

(2) PGM = 60 W, tp = 1 ms

(3) PGM = 30 W, tp = 2 ms

(4) PGM = 12 W, tp = 5 ms

tr =0.5us, tp≥6us

b)Recommended load line for

≤30% rated di/dt:15V, 40Ω

tr =1us, tp ≥6 us

T_J=-40℃

T_J=25℃

T_J=125℃

(4)

(3)

(2)

(1)

V_GD

Frequency Limited by PG(AV)

I_GD

0.1

0.001

0.01

0.1

100

Instantaneous Gate Current (A)

Figure 6. SCR Gate Characteristics

Dimensions in (mm)

Figure 7. Package Outline

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