AMM-7210中文资料_数据手册_规格书

22 GHz – 57 GHz GaAs Driver Amplifier

AMM-7210

1. Device Overview

1.1 General Description

The AMM-7210 is a general-purpose broadband MMIC driver amplifier

that provides +21 dBm output power suitable for driving a Marki H or L

diode mixer at 22-57 GHz and S diode mixer from 25-50 GHz. The small die

size allows it to be used in a variety of applications, and has built in DC-

blocking capacitors on the input and output.

UC Module

Bare Die

1.3 Applications

1.2 Features

▪

Mobile test and

▪

+21 dBm Output Power

measurement equipment

Broadband Performance

Small Die size

.s2p S-Parameters: AMM-7210CH

▪

Radar and satellite communications

5G Transceivers

Driver amplifier L,H,S – diode mixers

1.4 Functional Block Diagram

+Vd

- Vg

RF in

RF out

1.5 Part Ordering Options¹

Part

Green

Status

Product

Lifecycle

Export

Classification

Description

Number

Package

AMM-7210CH

AMM-7210UC

Wire Bondable Die Bare Die

RoHS

Pre-Release

3A001.b.2.d

EAR99

Connectorized

UC

Module

1

Refer to our website for a list of definitions for terminology presented in this table.

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AMM-7210

Table of Contents

3.5 Electrical Specifications .................. 8

1. Device Overview ............................... 1

1.1 General Description........................ 1

1.2 Features ....................................... 1

1.3 Applications................................... 1

1.4 Functional Block Diagram ................ 1

1.5 Part Ordering Options..................... 1

3.6 AMM-7210CH Typical Performance

Plots................................................... 9

3.7 AMM-7210UC Typical Performance

Plots................................................. 10

3.8 Typical Marki Mixer Performance Plots

with AMM-7210UC LO Driver............. 12

4. Application Information .................... 13

4.1 AMM-7210CH Application Circuit .. 13

2. AMM-7210 Port Configurations and

Functions ............................................... 3

2.1 AMM-7210CH Port Diagram........... 3

2.2 AMM-7210CH Port Functions......... 4

2.3 AMM-7210UC Port Diagram........... 5

2.4 AMM-7210UC Port Functions......... 5

3. Specifications ................................... 6

3.1 Absolute Maximum Ratings.............. 6

3.2 Package Information ....................... 6

3.3 Recommended Operating Conditions . 7

4.2 Best Practices to Prevent Oscillation

........................................................ 14

4.3 Constant Drain Current vs. Constant

Gate Voltage Operation ...................... 15

5. Mechanical Data............................. 15

5.1 AMM-7210CH Outline Drawing ..... 15

5.2 AMM-7210UC Package Outline

Drawing ............................................ 16

3.4 AMM-7210CH and AMM-7210UC

Sequencing Requirements ..................... 7

Revision History

Revision Code

Comment

Pre-Release

Revision Date

Feburary 2021

PRE

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AMM-7210

2. AMM-7210 Port Configurations and Functions

2.1 AMM-7210CH Port Diagram

A port diagram of the AMM-7210CH is shown below.

Vd 2

Vd 3

Vd 1

RF In

RF Out

Vg

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AMM-7210

2.2 AMM-7210CH Port Functions

Port

Function

Description

Equivalent Circuit for Package

This is the RF Input port of the

RF In

RF

In

amplifier die.

It is internally DC

RF Input

blocked and RF matched to 50 Ω. RF

input pad is GSG with 175 µm pitch.

This is the RF Output port of the

RF Out

amplifier die.

It is internally DC

RF

Out

RF Output blocked and RF matched to 50 Ω. RF

output pad is GSG with 175 µm

pitch.

Vd1

Vd2

Pad Vd 1 supplies drain voltage to

the first stage of the 3-stage

Drain

Supply

Vd 1

Vd 2

amplifier IC. Apply gate voltage Vg

Port 1

before applying drain voltage.

Pad Vd 2 supplies drain voltage to

the second stage of the 3-stage

Drain

Supply

amplifier IC. Apply gate voltage Vg

Port 2

before applying drain voltage.

Vd3

Pad Vd 3 supplies drain voltage to

the third stage of the 3-stage

Drain

Supply

Vd 3

amplifier IC. Apply gate voltage Vg

Port 3

before applying drain voltage.

The Vg pad is connected resistively

on chip. The user should apply

between -0.4V and -0.6V to Vg pad

before applying positive DC voltage

Gate Bias

Voltage

…

Vg

to any Vd port.

Lower (more

Pad

negative) voltages on a Vg pad will

result in lower drain current and

lower small signal gain.

Vg

Bottom side must be connected to a

DC/RF ground potential with high

thermal and electrical conductivity.

GND

Ground

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AMM-7210

2.3 AMM-7210UC Port Diagram

A port diagram of the AMM-7210UC is shown below.

GND

Vd

V+

microwave

Input

Output

RF In

RF Out

AAMMMM77221003UUCC

D/C

V-

Vg

GND

2.4 AMM-7210UC Port Functions

Port

Function

Description

Equivalent Circuit for Package

RF In

This is the RF Input port of the

amplifier module. It is internally DC

blocked and RF matched to 50 Ω.

RF In

RF Input

RF Out

This is the RF Output port of the

amplifier module. It is internally DC

blocked and RF matched to 50 Ω.

RF

Out

RF Output

Vd

The Vd pin supplies drain voltage to the

amplifier IC. Apply gate voltage Vg

before applying drain voltage.

Drain Supply

Vd

The Vg pin supplies negative control

voltage to the amplifier and controls

Gate Bias

the amplifier gain.

Lower (more

…

Vg

negative) voltages on a Vg pad will

result in lower drain current and lower

small signal gain.

Vg

Exterior housing must be connected to

a DC/RF ground potential with high

thermal and electrical conductivity.

GND

Ground

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AMM-7210

3. Specifications

3.1 Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the

device. If these limits are exceeded, the device may become inoperable or have a reduced

lifetime.

Parameter

Positive Drain Supply Voltage (Vd)

Maximum Rating

Units

4.5

-2

V

Negative Bias Voltage (Vg)

RF Input Power

+15

dBm

-

Output Load VSWR

7:1

Operating Temperature

-40 to +85

-65 to +150

TBD

˚C

Storage Temperature

˚C

휃_퐽푐, Junction to Case Thermal Resistance

Max Junction Temperature for MTTF > 1E6 hours

ºC/W

˚C

175

Max Power Dissipation for MTTF of 1E6 hours at 85˚C

Baseplate Temperature

TBD

mW

3.2 Package Information

Parameter

Details

Rating

ESD

Human Body Model (HBM), per MIL-STD-750, Method 1020

AMM-7210UC

TBD

Weight

12.4

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AMM-7210

3.3 Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should

be operated, to guarantee the performance given in Electrical Specifications Operating

outside these limits may not necessarily cause damage to the device, but the

performance may degrade outside the limits of the electrical specifications. For limits,

above which damage may occur, see Absolute Maximum Ratings.

Recommended Operating Conditions²

T_A, Ambient Temperature

Min Nominal Max Units

-40

+2

+25

+3

+85

+4

°C

V

Power Supply DC Voltage (Vd)

Power Supply DC Current (Id) (No RF Input)^{2, 3}

Negative Bias Voltage (Vg)

100

-0.7

+8

180

-0.5

+11

300

-0.2

+13

mA

V

Input Power for Saturation

dBm

3.4 AMM-7210CH and AMM-7210UC Sequencing Requirements

Turn-on Procedure:

1) Apply negative bias to Vg

2) Apply Vd

Turn-off Procedure:

1) Turn off Vd

2) Turn off Vg

2

Power Supply DC current should be modified by changing bias voltage Vg to maintain junction

temperature within MTTF target for given operating conditions.

Recommended operating current conditions without RF input applied.

3

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AMM-7210

3.5 Electrical Specifications

The electrical specifications apply at T_A=+25°C in a 50Ω system.

Min and Max limits apply only to our connectorized units and are guaranteed at T_A=+25°C. Die are 100% DC tested and RF tested on a per

lot basis

Parameter

Test Conditions

Frequency

Min

Typical

Units

22 GHz – 30 GHz

+19

Saturated Output Power⁴

3V/-0.5V bias

dBm

30 GHz – 48 GHz

48 GHz – 57 GHz

22 GHz – 30 GHz

30 GHz – 48 GHz

+17

+20.5

+18

13

10

14.5

Small Signal Gain

3V/-0.5V bias

45 GHz – 57 GHz

22 GHz – 57 GHz

11

14

Input Return Loss

dB

Output Return Loss

22 GHz – 57 GHz

14

47

3V/-0.5V Bias

3V/-0.5V bias

Reverse Isolation

Noise Figure

6.3

3V/-0.4V

3V/-0.5V

3V/-0.6V

-

230

180

130

Bias Requirements⁵

Input IP3 (IIP3)

mA

22 GHz – 57 GHz

+13

+27

3V/-0.5V,

-20 dBm Input

Power

dBm

Output IP3 (OIP3)

Output P_1dB

3V/-0.5V bias

22 GHz – 57 GHz

+19

+11

Input Power for

Saturation

4

Saturated Output Power specification defined using the AMM-7210UC P5dB compression curve

shown in section 3.7.

5

Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.

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AMM-7210

3.6 AMM-7210CH Typical Performance Plots

Small Signal Gain (dB) vs. Frequency, Vd = 3V

Small Signal Gain (dB) vs. Frequency, Vd = 3.5V

30

25

20

15

10

5

30

25

20

15

10

5

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

3.5V / -0.4V Bias

3.5V / -0.5V Bias

3.5V / -0.6V Bias

0

15

20

25

30

35

40

45

50

55

60

15

20

25

30

35

40

45

50

55

60

Frequency (GHz)

Small Signal Gain (dB) vs. Frequency, Vd = 4V

Reverse Isolation (dB) vs. Frequency, Vd = 3V

30

25

20

15

10

5

0

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

4V / -0.4V Bias

4V / -0.5V Bias

4V / -0.6V Bias

-10

-20

-30

-40

-50

-60

-70

-80

-90

0

15

20

25

30

35

40

45

50

55

60

25

30

35

40

45

50

55

Frequency (GHz)

Output Return Loss (dB) vs. Frequency, Vd = 3V

Input Return Loss (dB) vs. Frequency, Vd = 3V

0

-5

0

-5

-10

-15

-20

-25

-30

-35

-10

-15

-20

-25

-30

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

25

30

35

40

45

50

55

15

20

25

30

35

40

45

50

55

60

Frequency (GHz)

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AMM-7210

3.7 AMM-7210UC Typical Performance Plots

Small Signal Gain (dB) vs. Frequency, Vd = 3V

Output Compression Curves (dBm) vs. Frequency, 3V/-0.5V Bias

30

25

20

15

10

5

30

25

20

15

10

5

3.0V / -0.4V Bias

3.0V / -0.5V Bias

3.0V / -0.6V Bias

OP5dB

OP3dB

OP1dB

0

15

20

25

30

35

40

45

50

55

60

15

20

25

30

35

40

45

50

55

60

Frequency (GHz)

Small Signal Gain (dB) vs. Frequency, Vd = 3.5V

Output Compression Curves (dBm) vs. Frequency, 3.5V/-0.5V Bias

30

25

20

15

10

5

30

25

20

15

10

5

3.5V / -0.4V Bias

3.5V / -0.5V Bias

3.5V / -0.6V Bias

OP5dB

OP3dB

OP1dB

0

15

20

25

30

35

40

45

50

55

60

25

30

35

40

45

50

55

Frequency (GHz)

Input Return Loss (dB) vs. Frequency, Vd = 3V

Output Return Loss (dB) vs. Frequency, Vd = 3V

0

-5

0

-5

-10

-15

-20

-25

-30

-10

-15

-20

-25

-30

3.0V / -0.4V Bias

3.0V / -0.5V Bias

3.0V / -0.6V Bias

3.0V / -0.4V Bias

3.0V / -0.5V Bias

3.0V / -0.6V Bias

15

20

25

30

35

40

45

50

55

60

25

30

35

40

45

50

55

Frequency (GHz)

Noise Figure (dB) vs. Frequency

Reverse Isolation (dB) vs. Frequency, Vd = 3V

10

9

8

7

6

5

4

3

2

1

0

-10

-20

-30

-40

-50

-60

-70

-80

3.0V / -0.5V Bias

3.5V / -0.5V Bias

3.0V / -0.4V Bias

3.0V / -0.5V Bias

3.0V / -0.6V Bias

15

20

25

30

35

40

45

50

55

60

20

25

30

35

40

45

50

55

Frequency (GHz)

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AMM-7210

OIP3 (dBm) vs. Frequency, Vd = 3V

IIP3 (dBm) vs. Frequency, Vd = 3V

40

35

30

25

20

15

10

5

40

35

30

25

20

15

10

5

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

3V / -0.4V Bias

3V / -0.5V Bias

3V / -0.6V Bias

0

15

20

25

30

35

40

45

50

55

60

15

20

25

30

35

40

45

50

55

60

Frequency (GHz)

Saturated Output Power (dBm) vs. Frequency,

3V/-0.5V Bias, Over Temp.

Small Signal Gain(dB) vs. Frequency, 3V/-0.5V Bias, Over Temp.

30

25

20

15

10

5

30

25

20

15

10

5

-40 C

25 C

85 C

0 C

55 C

-40 C

25 C

85 C

0 C

55 C

0

15

20

25

30

35

40

45

50

55

60

15

20

25

30

35

40

45

50

55

60

Frequency (GHz)

Quiescent Drain Current (mA) vs. Vg

Quiescent Drain Current (mA) vs. Vd

260

240

220

200

180

160

140

120

100

300

280

260

240

220

200

180

160

140

120

100

80

Vg = -0.4V

Vg = -0.5V

Vg = -0.6V

Vd = 3.5V

Vd = 3V

Vd = 2.5V

1.5

2

2.5

3

3.5

4

4.5

-0.7

-0.65

-0.6

-0.55

-0.5

Vg (V)

-0.45

-0.4

-0.35

-0.3

Vd (V)

Drain Current (mA) vs. RF Input power, 3V/-0.5V Bias

400

350

300

250

200

150

100

25 GHz

35 GHz

45 GHz

55 GHz

30 GHz

40 GHz

50 GHz

Space Intentionally Left Blank

-10

-8

-6

-4

-2

0

2

4

6

8

10

RF Input Power (dBm)

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AMM-7210

3.8 Typical Marki Mixer Performance Plots with AMM-7210UC LO Driver⁶

MM1-1857H Config. A Conv. Loss (dB) vs. Frequency, 91 MHz IF,

AMM-7210UC LO Driver, 3V / -0.5V Bias

MM1-1857H Config. A IIP3 (dBm) vs. Frequency, 91 MHz IF,

AMM-7210UC LO Driver, 3V / -0.5V Bias

-4

-6

30

25

20

15

10

5

-8

-10

-12

-14

-16

-18

0 dBm LO Input

+3 dBm LO Input

+6 dBm LO Input

+9 dBm LO Input

0 dBm LO Input

+3 dBm LO Input

+6 dBm LO Input

+9 dBm LO Input

0

15

20

25

30

35

40

45

50

55

60

15

20

25

30

35

40

45

50

55

60

RF Frequency (GHz)

MM1-1857H Config. A OIP3 (dBm) vs. Frequency, 91 MHz IF,

AMM-7210UC LO Driver, 3V / -0.5V Bias

30

25

20

15

10

5

0 dBm LO Input

+3 dBm LO Input

+6 dBm LO Input

+9 dBm LO Input

0

15

20

25

30

35

40

45

50

55

60

RF Frequency (GHz)

6

LO Input Powers specified as the input power into the AMM-7210UC LO driver

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AMM-7210

4. Application Information

4.1 AMM-7210CH Application Circuit

Below are the recommended application circuits for the AMM-7210CH.

Vd

A

50Ω

trace

50Ω

trace

Vd3

Vd2

Vd1

RF In

RF Out

Vg

50Ω

B

A

Vg

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AMM-7210

One can also choose to break out Vd1, Vd2, and Vd3 to separate power supply lines to

increase gain control and further strengthen amplifier stability.

Vd2

Vd1

Vd3

A

50Ω

trace

50Ω

trace

Vd2 Vd3

RF Out

Vd1

RF In

RF Out

50Ω

Vg

50Ω

B

A

Vg

Designator

Description

Sample Part Number

MVB4080X104ZGH5R3

A

B

Presidio 0.1 µF + 1800 pF Capacitor

PRT135-14x12x10A10R00FQE

PPI 10Ω Wire-bondable series resistor

4.2 Best Practices to Prevent Oscillation

Millimeter wave amplifiers are sensitive to low frequency oscillations caused by a DC/RF ground

path with excessive inductance. Ensure the chip is grounded with low inductance along the DC

path to voltage supply ground. The bypass arrangement is also critical to reducing the possibility of

oscillation, and the series resistor B (shown above) with value 10 – 100 Ω is necessary to help

strengthen the amplifier stability.

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AMM-7210

4.3 Constant Drain Current vs. Constant Gate Voltage Operation

The AMM-7210 pHEMT amplifier can be biased with a constant gate and drain voltage, or with a

constant drain current by regulating the gate voltage. Using a constant gate and drain voltage

reduces circuit complexity, but has variable current consumption during operation. However,

regulating the gate voltage using feedback circuitry which controls the drain current to a constant

value minimizes unit-to-unit variation in gain, output power, and compression points.

Under small signal excitation at a fixed temperature, these two approaches are equivalent because

the current draw versus frequency is relatively constant in small signal. However, they will diverge

in large signal conditions, where the drain current is affected the input signal’s frequency and power.

The output power in saturation is relatively unchanged, as it is more strongly dependent on the drain

voltage. However, output referred 1 dB compression point will decrease by 2-3 dB when operated

with a constant drain current.

5. Mechanical Data

5.1 AMM-7210CH Outline Drawing

PROJECTION

INCH

.0541

[MM]

[1.374]

.0387

[.982]

.0050

[.127]

.0010 [.025] Spacing,

4 PL

.0269

[.682]

Min Clearance

.0039 [.100] x .0039 [.100]

VD Pad, 3PL

.0039

[.098]

.0150

[.382]

.0111

[.282]

.0180

[.457]

.0190

[.482]

.0259

[.657]

RF

(IN)

.0458

RF

[1.163]

(OUT)

.0079 [.200] x .0039 [.100]

Signal Pad, 2PL

.0039 [.100] x .0039 [.100]

Ground Pad Vias, 4PL

.0039

[.098]

.0039

[.099]

.0112

[.286]

.0020

[.051]

.0039 [.100] x .0039 [.100]

VG Pad,1PL

Notes:

1) RF GSG probe pitch is 175 µm.

2) CH substrate is 0.002 inches thick GaAs.

3) I/O trace finish is 4 µm Au. Ground finish is 5 µm Au.

4) Die are not passivated

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AMM-7210

5.2 AMM-7210UC Package Outline Drawing

0.52

[13.21]

0.51

[12.88]

0.17

[4.32]

0.14

[3.43]

PROJECTION

INCH

[MM]

V+

0.22

0.28

[7.11]

[5.46]

microwave

0.56

[14.22]

*Notes:

1. All measurements are

typical.

Input

Output

AMM7210UC

D/C

2. Ground lug and bias

pins are solderable.

V-

Ø.067 Thru, 4 PL

0.43

[10.92]

[1.70]

Port

Input

Output

Connector Type

1.85 mm Female

1.85 mm Male

typ.

0.44

[11.07]

0.04

[1.07]

Note: UC-Package Connectors are not removeable

0.39

[9.88]

0.19

[4.94]

1.46

[36.96]

.

Marki Microwave reserves the right to make changes to the product(s) or information contained

herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding

the suitability of its products for any particular purpose, nor does Marki Microwave assume any

liability whatsoever arising out of the use or application of any product

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型号	制造商	描述	价格	文档
AMM-7210CH	MARKIMICROWAVE	22 GHz â 57 GHz GaAs Driver Amplifier	获取价格
AMM-7210UC	MARKIMICROWAVE	22 GHz â 57 GHz GaAs Driver Amplifier	获取价格
AMM02DRAN	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DREN	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DREN-S328	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DRKN	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DRKN-S13	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DRKN-S328	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DRTN	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格
AMM02DRTN-S13	ETC	CONN EDGE DUAL FEMALE 4POS 0.156	获取价格

AMM-7210

AMM-7210 概述

AMM-7210 数据手册

AMM-7210 相关器件

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