AMM-7210

更新时间:2024-10-29 23:24:44
品牌:MARKIMICROWAVE
描述:22 GHz – 57 GHz GaAs Driver Amplifier

AMM-7210 概述

22 GHz – 57 GHz GaAs Driver Amplifier

AMM-7210 数据手册

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22 GHz 57 GHz GaAs Driver Amplifier  
AMM-7210  
1. Device Overview  
1.1 General Description  
The AMM-7210 is a general-purpose broadband MMIC driver amplifier  
that provides +21 dBm output power suitable for driving a Marki H or L  
diode mixer at 22-57 GHz and S diode mixer from 25-50 GHz. The small die  
size allows it to be used in a variety of applications, and has built in DC-  
blocking capacitors on the input and output.  
UC Module  
Bare Die  
1.3 Applications  
1.2 Features  
Mobile test and  
+21 dBm Output Power  
measurement equipment  
Broadband Performance  
Small Die size  
.s2p S-Parameters: AMM-7210CH  
Radar and satellite communications  
5G Transceivers  
Driver amplifier L,H,S diode mixers  
1.4 Functional Block Diagram  
+Vd  
- Vg  
RF in  
RF out  
1.5 Part Ordering Options1  
Part  
Green  
Status  
Product  
Lifecycle  
Export  
Classification  
Description  
Number  
Package  
AMM-7210CH  
AMM-7210UC  
Wire Bondable Die Bare Die  
RoHS  
RoHS  
Pre-Release  
Pre-Release  
3A001.b.2.d  
EAR99  
Connectorized  
UC  
Module  
1
Refer to our website for a list of definitions for terminology presented in this table.  
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AMM-7210  
Table of Contents  
3.5 Electrical Specifications .................. 8  
1. Device Overview ............................... 1  
1.1 General Description........................ 1  
1.2 Features ....................................... 1  
1.3 Applications................................... 1  
1.4 Functional Block Diagram ................ 1  
1.5 Part Ordering Options..................... 1  
3.6 AMM-7210CH Typical Performance  
Plots................................................... 9  
3.7 AMM-7210UC Typical Performance  
Plots................................................. 10  
3.8 Typical Marki Mixer Performance Plots  
with AMM-7210UC LO Driver............. 12  
4. Application Information .................... 13  
4.1 AMM-7210CH Application Circuit .. 13  
2. AMM-7210 Port Configurations and  
Functions ............................................... 3  
2.1 AMM-7210CH Port Diagram........... 3  
2.2 AMM-7210CH Port Functions......... 4  
2.3 AMM-7210UC Port Diagram........... 5  
2.4 AMM-7210UC Port Functions......... 5  
3. Specifications ................................... 6  
3.1 Absolute Maximum Ratings.............. 6  
3.2 Package Information ....................... 6  
3.3 Recommended Operating Conditions . 7  
4.2 Best Practices to Prevent Oscillation  
........................................................ 14  
4.3 Constant Drain Current vs. Constant  
Gate Voltage Operation ...................... 15  
5. Mechanical Data............................. 15  
5.1 AMM-7210CH Outline Drawing ..... 15  
5.2 AMM-7210UC Package Outline  
Drawing ............................................ 16  
3.4 AMM-7210CH and AMM-7210UC  
Sequencing Requirements ..................... 7  
Revision History  
Revision Code  
Comment  
Pre-Release  
Revision Date  
Feburary 2021  
PRE  
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AMM-7210  
2. AMM-7210 Port Configurations and Functions  
2.1 AMM-7210CH Port Diagram  
A port diagram of the AMM-7210CH is shown below.  
Vd 2  
Vd 3  
Vd 1  
RF In  
RF Out  
Vg  
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AMM-7210  
2.2 AMM-7210CH Port Functions  
Port  
Function  
Description  
Equivalent Circuit for Package  
This is the RF Input port of the  
RF In  
RF  
In  
amplifier die.  
It is internally DC  
RF Input  
blocked and RF matched to 50 Ω. RF  
input pad is GSG with 175 µm pitch.  
This is the RF Output port of the  
RF Out  
amplifier die.  
It is internally DC  
RF  
Out  
RF Output blocked and RF matched to 50 Ω. RF  
output pad is GSG with 175 µm  
pitch.  
Vd1  
Vd2  
Pad Vd 1 supplies drain voltage to  
the first stage of the 3-stage  
Drain  
Supply  
Vd 1  
Vd 2  
amplifier IC. Apply gate voltage Vg  
Port 1  
before applying drain voltage.  
Pad Vd 2 supplies drain voltage to  
the second stage of the 3-stage  
Drain  
Supply  
amplifier IC. Apply gate voltage Vg  
Port 2  
before applying drain voltage.  
Vd3  
Pad Vd 3 supplies drain voltage to  
the third stage of the 3-stage  
Drain  
Supply  
Vd 3  
amplifier IC. Apply gate voltage Vg  
Port 3  
before applying drain voltage.  
The Vg pad is connected resistively  
on chip. The user should apply  
between -0.4V and -0.6V to Vg pad  
before applying positive DC voltage  
Gate Bias  
Voltage  
Vg  
to any Vd port.  
Lower (more  
Pad  
negative) voltages on a Vg pad will  
result in lower drain current and  
lower small signal gain.  
Vg  
Bottom side must be connected to a  
DC/RF ground potential with high  
thermal and electrical conductivity.  
GND  
GND  
Ground  
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AMM-7210  
2.3 AMM-7210UC Port Diagram  
A port diagram of the AMM-7210UC is shown below.  
GND  
Vd  
V+  
microwave  
Input  
Output  
RF In  
RF Out  
AMM7210UC
D/C  
V-  
Vg  
GND  
2.4 AMM-7210UC Port Functions  
Port  
Function  
Description  
Equivalent Circuit for Package  
RF In  
This is the RF Input port of the  
amplifier module. It is internally DC  
blocked and RF matched to 50 .  
RF In  
RF Input  
RF Out  
This is the RF Output port of the  
amplifier module. It is internally DC  
blocked and RF matched to 50 Ω.  
RF  
Out  
RF Output  
Vd  
The Vd pin supplies drain voltage to the  
amplifier IC. Apply gate voltage Vg  
before applying drain voltage.  
Drain Supply  
Pin  
Vd  
The Vg pin supplies negative control  
voltage to the amplifier and controls  
Gate Bias  
Pin  
the amplifier gain.  
Lower (more  
Vg  
negative) voltages on a Vg pad will  
result in lower drain current and lower  
small signal gain.  
Vg  
Exterior housing must be connected to  
a DC/RF ground potential with high  
thermal and electrical conductivity.  
GND  
GND  
Ground  
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AMM-7210  
3. Specifications  
3.1 Absolute Maximum Ratings  
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the  
device. If these limits are exceeded, the device may become inoperable or have a reduced  
lifetime.  
Parameter  
Positive Drain Supply Voltage (Vd)  
Maximum Rating  
Units  
4.5  
-2  
V
V
Negative Bias Voltage (Vg)  
RF Input Power  
+15  
dBm  
-
Output Load VSWR  
7:1  
Operating Temperature  
-40 to +85  
-65 to +150  
TBD  
˚C  
Storage Temperature  
˚C  
, Junction to Case Thermal Resistance  
Max Junction Temperature for MTTF > 1E6 hours  
ºC/W  
˚C  
175  
Max Power Dissipation for MTTF of 1E6 hours at 85˚C  
Baseplate Temperature  
TBD  
mW  
3.2 Package Information  
Parameter  
Details  
Rating  
ESD  
Human Body Model (HBM), per MIL-STD-750, Method 1020  
AMM-7210UC  
TBD  
Weight  
12.4  
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AMM-7210  
3.3 Recommended Operating Conditions  
The Recommended Operating Conditions indicate the limits, inside which the device should  
be operated, to guarantee the performance given in Electrical Specifications Operating  
outside these limits may not necessarily cause damage to the device, but the  
performance may degrade outside the limits of the electrical specifications. For limits,  
above which damage may occur, see Absolute Maximum Ratings.  
Recommended Operating Conditions2  
TA, Ambient Temperature  
Min Nominal Max Units  
-40  
+2  
+25  
+3  
+85  
+4  
°C  
V
Power Supply DC Voltage (Vd)  
Power Supply DC Current (Id) (No RF Input)2, 3  
Negative Bias Voltage (Vg)  
100  
-0.7  
+8  
180  
-0.5  
+11  
300  
-0.2  
+13  
mA  
V
Input Power for Saturation  
dBm  
3.4 AMM-7210CH and AMM-7210UC Sequencing Requirements  
Turn-on Procedure:  
1) Apply negative bias to Vg  
2) Apply Vd  
Turn-off Procedure:  
1) Turn off Vd  
2) Turn off Vg  
2
Power Supply DC current should be modified by changing bias voltage Vg to maintain junction  
temperature within MTTF target for given operating conditions.  
Recommended operating current conditions without RF input applied.  
3
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AMM-7210  
3.5 Electrical Specifications  
The electrical specifications apply at TA=+25°C in a 50system.  
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per  
lot basis  
Parameter  
Test Conditions  
Frequency  
Min  
Typical  
Units  
22 GHz 30 GHz  
+19  
Saturated Output Power4  
3V/-0.5V bias  
dBm  
30 GHz 48 GHz  
48 GHz 57 GHz  
22 GHz 30 GHz  
30 GHz 48 GHz  
+17  
+20.5  
+18  
13  
10  
14.5  
Small Signal Gain  
3V/-0.5V bias  
45 GHz 57 GHz  
22 GHz 57 GHz  
11  
14  
Input Return Loss  
dB  
Output Return Loss  
22 GHz 57 GHz  
22 GHz 57 GHz  
22 GHz 57 GHz  
14  
47  
3V/-0.5V Bias  
3V/-0.5V bias  
Reverse Isolation  
Noise Figure  
6.3  
3V/-0.4V  
3V/-0.5V  
3V/-0.6V  
-
-
-
230  
180  
130  
Bias Requirements5  
Input IP3 (IIP3)  
mA  
22 GHz 57 GHz  
22 GHz 57 GHz  
+13  
+27  
3V/-0.5V,  
-20 dBm Input  
Power  
dBm  
dBm  
Output IP3 (OIP3)  
Output P1dB  
3V/-0.5V bias  
3V/-0.5V bias  
22 GHz 57 GHz  
22 GHz 57 GHz  
+19  
+11  
Input Power for  
Saturation  
4
Saturated Output Power specification defined using the AMM-7210UC P5dB compression curve  
shown in section 3.7.  
5
Bias conditions tested with no RF input power. Bias conditions presented as Vd/Vg.  
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AMM-7210  
3.6 AMM-7210CH Typical Performance Plots  
Small Signal Gain (dB) vs. Frequency, Vd = 3V  
Small Signal Gain (dB) vs. Frequency, Vd = 3.5V  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
3.5V / -0.4V Bias  
3.5V / -0.5V Bias  
3.5V / -0.6V Bias  
0
0
15  
15  
15  
20  
20  
20  
25  
30  
35  
40  
45  
50  
55  
60  
60  
60  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
Frequency (GHz)  
Frequency (GHz)  
Small Signal Gain (dB) vs. Frequency, Vd = 4V  
Reverse Isolation (dB) vs. Frequency, Vd = 3V  
30  
25  
20  
15  
10  
5
0
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
4V / -0.4V Bias  
4V / -0.5V Bias  
4V / -0.6V Bias  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
Frequency (GHz)  
Frequency (GHz)  
Output Return Loss (dB) vs. Frequency, Vd = 3V  
Input Return Loss (dB) vs. Frequency, Vd = 3V  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-10  
-15  
-20  
-25  
-30  
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
25  
30  
35  
40  
45  
50  
55  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
Frequency (GHz)  
Frequency (GHz)  
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AMM-7210  
3.7 AMM-7210UC Typical Performance Plots  
Small Signal Gain (dB) vs. Frequency, Vd = 3V  
Output Compression Curves (dBm) vs. Frequency, 3V/-0.5V Bias  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
3.0V / -0.4V Bias  
3.0V / -0.5V Bias  
3.0V / -0.6V Bias  
OP5dB  
OP3dB  
OP1dB  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
15  
15  
15  
15  
20  
20  
20  
25  
30  
35  
40  
45  
50  
55  
60  
60  
60  
Frequency (GHz)  
Frequency (GHz)  
Small Signal Gain (dB) vs. Frequency, Vd = 3.5V  
Output Compression Curves (dBm) vs. Frequency, 3.5V/-0.5V Bias  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
3.5V / -0.4V Bias  
3.5V / -0.5V Bias  
3.5V / -0.6V Bias  
OP5dB  
OP3dB  
OP1dB  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
Frequency (GHz)  
Frequency (GHz)  
Input Return Loss (dB) vs. Frequency, Vd = 3V  
Output Return Loss (dB) vs. Frequency, Vd = 3V  
0
-5  
0
-5  
-10  
-15  
-20  
-25  
-30  
-10  
-15  
-20  
-25  
-30  
3.0V / -0.4V Bias  
3.0V / -0.5V Bias  
3.0V / -0.6V Bias  
3.0V / -0.4V Bias  
3.0V / -0.5V Bias  
3.0V / -0.6V Bias  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
30  
35  
40  
45  
50  
55  
Frequency (GHz)  
Frequency (GHz)  
Noise Figure (dB) vs. Frequency  
Reverse Isolation (dB) vs. Frequency, Vd = 3V  
10  
9
8
7
6
5
4
3
2
1
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
3.0V / -0.5V Bias  
3.5V / -0.5V Bias  
3.0V / -0.4V Bias  
3.0V / -0.5V Bias  
3.0V / -0.6V Bias  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
20  
25  
30  
35  
40  
45  
50  
55  
Frequency (GHz)  
Frequency (GHz)  
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AMM-7210  
OIP3 (dBm) vs. Frequency, Vd = 3V  
IIP3 (dBm) vs. Frequency, Vd = 3V  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
3V / -0.4V Bias  
3V / -0.5V Bias  
3V / -0.6V Bias  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
Frequency (GHz)  
Frequency (GHz)  
Saturated Output Power (dBm) vs. Frequency,  
3V/-0.5V Bias, Over Temp.  
Small Signal Gain(dB) vs. Frequency, 3V/-0.5V Bias, Over Temp.  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
-40 C  
25 C  
85 C  
0 C  
55 C  
-40 C  
25 C  
85 C  
0 C  
55 C  
0
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
Frequency (GHz)  
Frequency (GHz)  
Quiescent Drain Current (mA) vs. Vg  
Quiescent Drain Current (mA) vs. Vd  
260  
240  
220  
200  
180  
160  
140  
120  
100  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
Vg = -0.4V  
Vg = -0.5V  
Vg = -0.6V  
Vd = 3.5V  
Vd = 3V  
Vd = 2.5V  
1.5  
2
2.5  
3
3.5  
4
4.5  
-0.7  
-0.65  
-0.6  
-0.55  
-0.5  
Vg (V)  
-0.45  
-0.4  
-0.35  
-0.3  
Vd (V)  
Drain Current (mA) vs. RF Input power, 3V/-0.5V Bias  
400  
350  
300  
250  
200  
150  
100  
25 GHz  
35 GHz  
45 GHz  
55 GHz  
30 GHz  
40 GHz  
50 GHz  
Space Intentionally Left Blank  
-10  
-8  
-6  
-4  
-2  
0
2
4
6
8
10  
RF Input Power (dBm)  
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AMM-7210  
3.8 Typical Marki Mixer Performance Plots with AMM-7210UC LO Driver6  
MM1-1857H Config. A Conv. Loss (dB) vs. Frequency, 91 MHz IF,  
AMM-7210UC LO Driver, 3V / -0.5V Bias  
MM1-1857H Config. A IIP3 (dBm) vs. Frequency, 91 MHz IF,  
AMM-7210UC LO Driver, 3V / -0.5V Bias  
-4  
-6  
30  
25  
20  
15  
10  
5
-8  
-10  
-12  
-14  
-16  
-18  
0 dBm LO Input  
+3 dBm LO Input  
+6 dBm LO Input  
+9 dBm LO Input  
0 dBm LO Input  
+3 dBm LO Input  
+6 dBm LO Input  
+9 dBm LO Input  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RF Frequency (GHz)  
RF Frequency (GHz)  
MM1-1857H Config. A OIP3 (dBm) vs. Frequency, 91 MHz IF,  
AMM-7210UC LO Driver, 3V / -0.5V Bias  
30  
25  
20  
15  
10  
5
0 dBm LO Input  
+3 dBm LO Input  
+6 dBm LO Input  
+9 dBm LO Input  
0
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RF Frequency (GHz)  
6
LO Input Powers specified as the input power into the AMM-7210UC LO driver  
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AMM-7210  
4. Application Information  
4.1 AMM-7210CH Application Circuit  
Below are the recommended application circuits for the AMM-7210CH.  
Vd  
A
50Ω  
trace  
50Ω  
trace  
Vd3  
Vd2  
Vd1  
RF In  
RF In  
RF Out  
RF Out  
Vg  
50Ω  
50Ω  
B
A
Vg  
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AMM-7210  
One can also choose to break out Vd1, Vd2, and Vd3 to separate power supply lines to  
increase gain control and further strengthen amplifier stability.  
Vd2  
Vd1  
Vd3  
A
A
A
50Ω  
trace  
50Ω  
trace  
Vd2 Vd3  
RF Out  
Vd1  
RF In  
RF In  
RF Out  
50Ω  
Vg  
50Ω  
B
A
Vg  
Designator  
Description  
Sample Part Number  
MVB4080X104ZGH5R3  
A
B
Presidio 0.1 µF + 1800 pF Capacitor  
PRT135-14x12x10A10R00FQE  
PPI 10Ω Wire-bondable series resistor  
4.2 Best Practices to Prevent Oscillation  
Millimeter wave amplifiers are sensitive to low frequency oscillations caused by a DC/RF ground  
path with excessive inductance. Ensure the chip is grounded with low inductance along the DC  
path to voltage supply ground. The bypass arrangement is also critical to reducing the possibility of  
oscillation, and the series resistor B (shown above) with value 10 100 Ω is necessary to help  
strengthen the amplifier stability.  
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AMM-7210  
4.3 Constant Drain Current vs. Constant Gate Voltage Operation  
The AMM-7210 pHEMT amplifier can be biased with a constant gate and drain voltage, or with a  
constant drain current by regulating the gate voltage. Using a constant gate and drain voltage  
reduces circuit complexity, but has variable current consumption during operation. However,  
regulating the gate voltage using feedback circuitry which controls the drain current to a constant  
value minimizes unit-to-unit variation in gain, output power, and compression points.  
Under small signal excitation at a fixed temperature, these two approaches are equivalent because  
the current draw versus frequency is relatively constant in small signal. However, they will diverge  
in large signal conditions, where the drain current is affected the input signal’s frequency and power.  
The output power in saturation is relatively unchanged, as it is more strongly dependent on the drain  
voltage. However, output referred 1 dB compression point will decrease by 2-3 dB when operated  
with a constant drain current.  
5. Mechanical Data  
5.1 AMM-7210CH Outline Drawing  
PROJECTION  
INCH  
.0541  
[MM]  
[1.374]  
.0387  
[.982]  
.0050  
[.127]  
.0010 [.025] Spacing,  
4 PL  
.0269  
[.682]  
Min Clearance  
.0039 [.100] x .0039 [.100]  
VD Pad, 3PL  
.0039  
[.098]  
.0150  
[.382]  
.0111  
[.282]  
.0180  
[.457]  
.0190  
[.482]  
.0259  
[.657]  
RF  
(IN)  
.0458  
RF  
[1.163]  
(OUT)  
.0079 [.200] x .0039 [.100]  
Signal Pad, 2PL  
.0039 [.100] x .0039 [.100]  
Ground Pad Vias, 4PL  
.0039  
[.098]  
.0039  
[.099]  
.0112  
[.286]  
.0020  
[.051]  
.0039 [.100] x .0039 [.100]  
VG Pad,1PL  
Notes:  
1) RF GSG probe pitch is 175 µm.  
2) CH substrate is 0.002 inches thick GaAs.  
3) I/O trace finish is 4 µm Au. Ground finish is 5 µm Au.  
4) Die are not passivated  
Copyright © 2021 Marki Microwave, Inc. All Rights Reserved  
P a g e 15 | R e v . P R E  
www.markimicrowave.com  
AMM-7210  
5.2 AMM-7210UC Package Outline Drawing  
0.52  
[13.21]  
0.51  
[12.88]  
0.17  
[4.32]  
0.14  
[3.43]  
PROJECTION  
INCH  
[MM]  
V+  
0.22  
0.28  
[7.11]  
[5.46]  
microwave  
0.56  
[14.22]  
*Notes:  
1. All measurements are  
typical.  
Input  
Output  
AMM7210UC  
D/C  
2. Ground lug and bias  
pins are solderable.  
V-  
Ø.067 Thru, 4 PL  
0.43  
[10.92]  
[1.70]  
Port  
Input  
Output  
Connector Type  
1.85 mm Female  
1.85 mm Male  
typ.  
0.44  
[11.07]  
0.04  
[1.07]  
Note: UC-Package Connectors are not removeable  
0.39  
[9.88]  
0.19  
0.19  
[4.94]  
[4.94]  
1.46  
[36.96]  
.
Marki Microwave reserves the right to make changes to the product(s) or information contained  
herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding  
the suitability of its products for any particular purpose, nor does Marki Microwave assume any  
liability whatsoever arising out of the use or application of any product  
Copyright © 2021 Marki Microwave, Inc. All Rights Reserved  
P a g e 16 | R e v . P R E  

AMM-7210 相关器件

型号 制造商 描述 价格 文档
AMM-7210CH MARKIMICROWAVE 22 GHz – 57 GHz GaAs Driver Amplifier 获取价格
AMM-7210UC MARKIMICROWAVE 22 GHz – 57 GHz GaAs Driver Amplifier 获取价格
AMM02DRAN ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DREN ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DREN-S328 ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DRKN ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DRKN-S13 ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DRKN-S328 ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DRTN ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格
AMM02DRTN-S13 ETC CONN EDGE DUAL FEMALE 4POS 0.156 获取价格

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